IXYS 的 IXYH82N120C3 规格书

L'I IXYS
©2019 IXYS CORPORATION, All Rights Reserved
IXYH82N120C3 VCES = 1200V
IC110 = 82A
VCE(sat) 


3.20V
tfi(typ) = 93ns
DS100335C(1/19)
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247
GCE Tab
High-Speed IGBT
for 20-50 kHz Switching
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
High Current Handling Capability
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 1200 V
VGE(th) IC= 250A, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 25 A
TJ = 150C 500 μA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC= 82A, VGE = 15V, Note 1 2.75 3.20 V
TJ = 150C 3.76 V
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 1200 V
VCGR TJ = 25°C to 175°C, RGE = 1M 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 200 A
ILRMS Lead Current Limit 160 A
IC110 TC = 110°C 82 A
ICM TC = 25°C, 1ms 380 A
SSOA VGE = 15V, TVJ = 150°C, RG = 2 ICM = 164 A
(RBSOA) Clamped Inductive Load @VCE VCES
PCTC = 25°C 1250 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 6g
1200V XPTTM IGBT
GenX3TM
}}}}
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH82N120C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 30 50 S
Cies 4060 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 285 pF
Cres 110 pF
Qg(on) 215 nC
Qge IC = 82A, VGE = 15V, VCE = 0.5 • VCES 26 nC
Qgc 84 nC
td(on) 29 ns
tri 78 ns
Eon 4.95 mJ
td(off) 192 280 ns
tfi 93 ns
Eoff 2.78 5.00 mJ
td(on) 29 ns
tri 90 ns
Eon 7.45 mJ
td(off) 200 ns
tfi 95 ns
Eoff 3.70 mJ
RthJC 0.12 °C/W
RthCS 0.21 °C/W
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
Inductive load, TJ = 125°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2
Note 2
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©2019 IXYS CORPORATION, All Rights Reserved
IXYH82N120C3
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
120
140
160
00.511.522.533.544.55
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
9V
7V
8V
6V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
13V
12V 10V
8V
11V
5V
9V
7V
6V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
20
40
60
80
100
120
140
160
0123456
V
CE
- Volts
I
C
- Amperes
8V
7V
6V
5V
V
GE
= 15V
13V
11V
10V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 82A
I
C
= 41A
I
C
= 164A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
56789101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 164A
T
J
= 25
o
C
82A
41A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
V
GE
- Volts
I
C
-
Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH82N120C3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160
I
C
- Amperes
g
f s
-
Siemens
TJ
= - 40
o
C
25
o
C
125
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
160
180
200 400 600 800 1000 1200
V
CE
- Volts
I
C
- Amperes
TJ
= 150
o
C
RG = 2
Ω
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 82A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
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©2019 IXYS CORPORATION, All Rights Reserved
IXYH82N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
8
2 4 6 8 10 12 14 16 18
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
T
J
= 125
o
C , V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
40
60
80
100
120
140
160
180
200
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
f i
- Nanoseconds
140
220
300
380
460
540
620
700
780
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 125
o
C, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
10
E
on
- MilliJoules
E
off
E
on
R
G
= 2
Ω
V
GE
= 15V
V
CE
= 600V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
R
G
= 2
Ω
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
40
80
120
160
200
240
280
40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
170
180
190
200
210
220
230
240
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
0
40
80
120
160
200
240
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
160
180
200
220
240
260
280
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
ma h ‘ A Nanosecnnds 20 ma 120 mo 50 ea h ‘ A Nanosecnnds 40 20 120 [n - Nanoseconds 40 20 IXVS Reserves the ngm to Change meus‘ Test Commons, and DImeflS‘OHS.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH82N120C3
IXYS REF: IXY_82N120C3(8M)12-13-12-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
20
40
60
80
100
120
140
40 50 60 70 80 90 100
I
C
- Amperes
t
r i
- Nanoseconds
0
10
20
30
40
50
60
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
140
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
22
24
26
28
30
32
34
36
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
r i
- Nanoseconds
20
25
30
35
40
45
50
55
60
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 125
o
C, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
4 2 3 .650 ,6st 1551 17253 £20 £35 15 75 16.13 , 1 ‘ ¢ 14. £15 BSC 5.45 BSC Jt : 7 4 M .275 290 murmur,“ . 7 .242 Bsc
©2019 IXYS CORPORATION, All Rights Reserved
TO-247 (IXYH) Outline
1 - Gate
2,4 - Collector
3 -Emitter
IXYH82N120C3
% | 529'
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH82N120C3
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