onsemi 的 FNB41060 规格书

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FAIRCHILD — SEMICONDUCTOR“ AN-9070 - Motiun SPM® 45 Series Users Guide AN-9071 - Mul' n SPMG) 45 Series Thermal Perfor mance inlorma n AN-9072 - Motion SPMG) 45 Series Mounting Guld ance HD-344 - Reference Design (Three Shunt Solution HD-(Mfi - Helerence Design (One §hunr §giution
FNB41060 Motion SPM® 45 Series
January 2014
©2011 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FNB41060 Rev. C3
FNB41060
Motion SPM® 45 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 10 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low Thermal Resistance Using Ceramic Substrate
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes and Dedicated Vs Pins Sim-
plify PCB Layout
• Built-In NTC Thermistor for Temperature Monitoring
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2000 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9070 - Motion SPM® 45 Series Users Guide
• AN-9071 - Motion SPM® 45 Series Thermal Perfor-
mance Information
• AN-9072 - Motion SPM® 45 Series Mounting Guid-
ance
• RD-344 - Reference Design (Three Shunt Solution)
• RD-345 - Reference Design (One Shunt Solution)
General Description
FNB41060 is a Motion SPM® 45 module providing a
fully-featured, high-performance inverter output stage
for AC Induction, BLDC, and PMSM motors. These mod-
ules integrate optimized gate drive of the built-in IGBTs
to minimize EMI and losses, while also providing multi-
ple on-module protection features including under-volt-
age lockouts, over-current shutdown, thermal
monitoring, and fault reporting. The built-in, high-speed
HVIC requires only a single supply voltage and trans-
lates the incoming logic-level gate inputs to the high-volt-
age, high-current drive signals required to properly drive
the module's robust short-circuit-rated IGBTs. Separate
negative IGBT terminals are available for each phase to
support the widest variety of control algorithms.
Package Marking and Ordering Information
Figure 1. Package Overview
Device Device Marking Package Packing Type Quantity
FNB41060 FNB41060 SPMAA-A26 Rail 12
3: :3 3: 3443;433:333 O C C C o
FNB41060 Rev. C3
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
Integrated Power Functions
• 600 V - 10 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) protection
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) protection
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input
Pin Configuration
Figure 2. Top View
VTH(1)
RTH(2)
P(3)
U(4)
V(5)
W(6)
NU(7)
NV(8)
NW(9)
VB(U)(26)
VS(U)(25)
VB(V)(24)
VS(V)(23)
VB(W)(22)
VS(W)(21)
IN(UH)(20)
IN(VH)(19)
IN(WH)(18)
VCC(H)(17)
COM(15)
IN(UL)(14)
IN(VL)(13)
IN(WL)(12)
VFO(11)
CSC(10)
VCC(L)(16)
Case Temperature (TC)
Detecting Point
VTH(1)
RTH(2)
P(3)
U(4)
V(5)
W(6)
NU(7)
NV(8)
NW(9)
VB(U)(26)
VS(U)(25)
VB(V)(24)
VS(V)(23)
VB(W)(22)
VS(W)(21)
IN(UH)(20)
IN(VH)(19)
IN(WH)(18)
VCC(H)(17)
COM(15)
IN(UL)(14)
IN(VL)(13)
IN(WL)(12)
VFO(11)
CSC(10)
VCC(L)(16)
Case Temperature (TC)
Detecting Point
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FNB41060 Rev. C3
Pin Descriptions
Pin Number Pin Name Pin Description
1V
TH Thermistor Bias Voltage
2R
TH Series Resistor for the Use of Thermistor (Temperature Detection)
3 P Positive DC-Link Input
4 U Output for U-Phase
5 V Output for V-Phase
6 W Output for W-Phase
7N
UNegative DC-Link Input for U-Phase
8N
VNegative DC-Link Input for V-Phase
9N
WNegative DC-Link Input for W-Phase
10 CSC Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input
11 VFO Fault Output
12 IN(WL) Signal Input for Low-Side W-Phase
13 IN(VL) Signal Input for Low-Side V-Phase
14 IN(UL) Signal Input for Low-Side U-Phase
15 COM Common Supply Ground
16 VCC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving
17 VCC(H) High-Side Common Bias Voltage for IC and IGBTs Driving
18 IN(WH) Signal Input for High-Side W-Phase
19 IN(VH) Signal Input for High-Side V-Phase
20 IN(UH) Signal Input for High-Side U-Phase
21 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving
22 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving
23 VS(V) High-Side Bias Voltage Ground for V-Phase IGBT Driving
24 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving
25 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving
26 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FNB41060 Rev. C3
Internal Equivalent Circuit and Input/Output Pins
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.
COM
VCC
IN(WL)
IN(VL)
IN(UL)
VFO
C(SC) OUT(WL)
OUT(VL)
OUT(UL)
NW(9)
NV(8)
NU(7)
W(6)
V (5)
U(4)
P (3)
(25) VS(U)
(26) VB(U)
(23) VS(V)
(24) VB(V)
(10) CSC
(11) VFO
(12) IN(WL)
(13) IN(VL)
(14) IN(UL)
(15) COM
UVB
OUT(UH)
UVS
IN(UH)
WVS
WVS
OUT(WH)
IN(WH)
COM
VCC
WVB
OUT(VH)
VVS
IN(VH)
VTH (1)
(19) IN(VH)
(20) IN(UH)
(21) VS(W)
(22) VB(W)
(17) VCC(H)
(18) IN(WH)
RTH (2)
Thermister
UVS
VVS
VVB
(16) VCC(L)
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FNB41060 Rev. C3
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
1. Sinusoidal PWM at VPN = 300 V, VCC = VBS = 15 V, TJ＜150℃, FSW = 20 kHz, MI = 0.9, PF = 0.8
2. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 45 product is 150C.
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
2nd Notes:
3. For the measurement point of case temperature (TC), please refer to Figure 2.
Symbol Parameter Conditions Rating Unit
VPN Supply Voltage Applied between P - NU, NV, NW450 V
VPN(Surge) Supply Voltage (Surge) Applied between P - NU, NV, NW500 V
VCES Collector - Emitter Voltage 600 V
IO,25 Output Phase Current TC = 25°C, TJ ＜ 150°C (2nd Note 1) 10 A
IO,100 Output Phase Current TC = 100°C, TJ ＜ 150°C (2nd Note 1) 5 A
Ipk Output Peak Phase Current TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width
15 A
PCCollector Dissipation TC = 25°C per Chip 32 W
TJOperating Junction Temperature (2nd Note 2) - 40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V
VBS High - Side Control Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20 V
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
-0.3 ~ VCC + 0.3 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC + 0.3 V
IFO Fault Output Current Sink Current at VFO pin 1 mA
VSC Current-Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC + 0.3 V
Symbol Parameter Conditions Rating Unit
VRRM Maximum Repetitive Reverse Voltage 600 V
IFForward Current TC = 25°C, TJ ＜150°C 0.50 A
IFP Forward Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse
Width
1.50 A
TJOperating Junction Temperature -40 ~ 150 °C
Symbol Parameter Conditions Rating Unit
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VCC = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
400 V
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
2000 Vrms
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module) - - 3.8 °C / W
Rth(j-c)F Inverter FWDi Part (per 1 / 6 module) - - 4.8 °C / W
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FNB41060 Rev. C3
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
4. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Parameter Conditions Min. Typ. Max. Unit
VCE(SAT) Collector - Emitter Saturation
Voltage
VCC = VBS = 15 V
VIN = 5 V
IC = 5 A, TJ = 25°C - 1.5 2.0 V
VFFWDi Forward Voltage VIN = 0 V IF = 5 A, TJ = 25°C - 1.5 2.0 V
HS tON Switching Times VPN = 300 V, VCC = VBS = 15 V, IC = 5 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
(2nd Note 4)
0.45 0.75 1.25 s
tC(ON) -0.200.45s
tOFF -0.701.20s
tC(OFF) -0.150.40s
trr -0.15- s
LS tON VPN = 300 V, VCC = VBS = 15 V, IC = 5 A
TJ = 25°C
VIN = 0 V 5 V, Inductive Load
(2nd Note 4)
0.35 0.65 1.15 s
tC(ON) -0.150.40s
tOFF -0.651.15s
tC(OFF) -0.150.40s
trr -0.15- s
ICES Collector - Emitter Leakage
Current
VCE = VCES --1mA
VCE IC
VIN
tON
tC(ON)
VIN(ON)
10% IC
10% VCE
90% IC
100% IC
trr
100% IC
VCE
IC
VIN
tOFF tC(OFF)
VIN(OFF) 10% VCE 10% IC
(a) turn-on (b) turn-off
— IGBTTurroN. E — IGBTTurroEF. E — FRD Tum-OFF, E — IGET Tum-0N. E — IGET Tum-OFF, E — PHD Turn-OFF. E
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FNB41060 Rev. C3
Figure 5. Switching Loss Characteristics (Typical)
Control Part
2nd Notes:
5. Short-circuit protection is functioning only at the low-sides.
6. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application.
Symbol Parameter Conditions Min. Typ. Max. Unit
IQCCH Quiescent VCC Supply
Current
VCC(H) = 15 V, IN(UH,VH,WH) = 0 V VCC(H) - COM - - 0.10 mA
IQCCL VCC(L) = 15 V, IN(UL,VL, WL) = 0 V VCC(L) - COM - - 2.65 mA
IPCCH Operating VCC Supply
Current
VCC(L) = 15 V, fPWM = 20 kHz, duty
= 50%, Applied to One PWM Sig-
nal Input for High-Side
VCC(H) - COM - - 0.15 mA
IPCCL VCC(L) = 15 V, fPWM = 20 kHz, duty
= 50%, Applied to One PWM Sig-
nal Input for Low-Side
VCC(L) - COM - - 3.65 mA
IQBS Quiescent VBS Supply
Current
VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) -
VS(V), VB(W) - VS(W)
- - 0.30 mA
IPBS Operating VBS Supply
Current
VCC = VBS = 15 V, fPWM = 20 kHz,
Duty = 50%, Applied to One PWM
Signal Input for High-Side
VB(U) - VS(U), VB(V) -
VS(V), VB(W) - VS(W)
- - 2.00 mA
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 10 k to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 10 k to 5 V Pull-up - - 0.5 V
VSC(ref) Short-Circuit
Current Trip Level
VCC = 15 V (2nd Note 5) 0.45 0.50 0.55 V
UVCCD Supply Circuit
Under-Voltage
Protection
Detection level 10.5 - 13.0 V
UVCCR Reset level 11.0 - 13.5 V
UVBSD Detection level 10.0 - 12.5 V
UVBSR Reset level 10.5 - 13.0 V
tFOD Fault-Out Pulse Width 30 - - s
VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL),
IN(WL) - COM
--2.6V
VIN(OFF) OFF Threshold Voltage 0.8 - - V
RTH Resistance of
Thermister
@TTH = 25°C, (2nd Note 6) - 47 - k
@TTH = 100°C - 2.9 - k
012345
0
50
100
150
200
250
300
350
400 Inductive Load, VPN=300V, VCC=15V, TJ=25℃
IGBT Turn-ON, Eon
IGBT Turn-OFF, Eoff
FRD Turn-OFF, Erec
SWITCHING LOSS, ESW [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
012345
0
50
100
150
200
250
300
350
400 Inductive Load, VPN=300V, VCC=15V, TJ=150℃
IGBT Turn-ON, Eon
IGBT Turn-OFF, Eoff
FRD Turn-OFF, Erec
SWITCHING LOSS, ESW [uJ]
COLLECTOR CURRENT, Ic [AMPERES]
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FNB41060 Rev. C3
Figure. 6. R-T Curve of The Built-In Thermistor
Bootstrap Diode Part
Figure 7. Built-In Bootstrap Diode Characteristic
2nd Notes:
7. Built-in bootstrap diode includes around 15 Ω resistance characteristic.
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V
trr Reverse-Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns
50 60 70 80 90 100 110 120
0
4
8
12
16
20
Resistance[k]
Temperature [ ]℃
R-T Curve in 50 ~ 125℃℃
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Built-In Bootstrap Diode VF-IF Characteristic
TC=25oC
IF [A]
VF [V]
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FNB41060 Rev. C3
Recommended Operating Conditions
2nd Notes:
8. This product might not make response if input pulse width is less than the recommanded value.
Figure 8. Allowable Maximum Output Current
2nd Notes:
9. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition.
Symbol Parameter Conditions Min. Typ. Max. Unit
VPN Supply Voltage Applied between P - NU, NV, NW- 300 400 V
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 13.5 15 16.5 V
VBS High-Side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -
VS(W)
13.0 15 18.5 V
dVCC / dt,
dVBS / dt
Control Supply Variation - 1 - 1 V / s
tdead Blanking Time for
Preventing Arm-Short
For each input signal 1.5 - - s
fPWM PWM Input Signal - 40C ＜TJ ＜150°C - - 20 kHz
VSEN Voltage for Current
Sensing
Applied between NU, NV, NW - COM
(Including Surge-Voltage)
- 4 4 V
PWIN(ON) Minimun Input Pulse
Width
(2nd Note 8) 0.5 - - s
PWIN(OFF) 0.5 - -
0 102030405060708090100110120130140
0
1
2
3
4
5
6
7
8
9
10 Allowable Maximum Output Current
VDC=300V, VCC=VBS=15V
TJ ＜ 150℃ , TC ≤ 125℃
M.I.=0.9, P.F.=0.8
Sinusoidal PWM
fSW=15kHz
fSW=5kHz
Allowable Output Current, IOrms [Arms]
Case Temperature, TC [℃]
(*) mm\ ‘\‘ \mmmmmmmmmmm $1 m m 777777777777"??? \ 7?} I d. )9) (33%;: ,,,,,,,,,,,,,,,,,,, :j::;, WW W W W W WWW
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FNB41060 Rev. C3
Mechanical Characteristics and Ratings
Figure 9. Flatness Measurement Position
Figure 10. Mounting Screws Torque Order
2nd Notes:
10. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.
11. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of the SPM® 45
package to be damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.
Parameter Conditions Min. Typ. Max. Unit
Device Flatness See Figure 9 0 - + 120 m
Mounting Torque Mounting Screw: M3
See Figure 10
Recommended 0.7 N • m 0.6 0.7 0.8 N • m
Recommended 7.1 kg • cm 6.2 7.1 8.1 kg • cm
Weight -11-g
1
2
Pre - Screwing : 1→2
Final Screwing : 2→1
1
2
Pre - Screwing : 1→2
Final Screwing : 2→1
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FNB41060 Rev. C3
Time Charts of Protective Function
a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under-voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under-voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 11. Under-Voltage Protection (Low-Side)
b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under-voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under-voltage reset (UVBSR).
b6 : Normal operation: IGBT ON and carrying current.
Figure 12. Under-Voltage Protection (High-Side)
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVCCR
Protection
Circuit State SET RESET
UVCCD
a1
a3
a2 a4
a6
a5
a7
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVBSR
Protection
Circuit State SET RESET
UVBSD
b1
b3
b2 b4
b6
b5
High-level (no fault output)
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com
FNB41060 Rev. C3
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short-circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Input “LOW”: IGBT OFF state.
c6 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.
c7 : IGBT OFF state.
Figure 13. Short-Circuit Protection (Low-Side Operation Only)
Input/Output Interface Circuit
Figure 14. Recommended MCU I/O Interface Circuit
2nd Notes:
12. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed
circuit board. The input signal section of the Motion SPM® 45 product integrates a 5 k(typ.) pull-down resistor. Therefore, when using an external filtering resistor, pay atten-
tion to the signal voltage drop at input terminal.
Lower Arms
Control Input
Output Current
Sensing Voltage
of Shunt Resistance
Fault Output Signal
SC Reference Voltage
CR Circuit Time
Constant Delay
SC
Protection
Circuit State SET RESET
c6 c7
c3
c2
c1
c8
c4
c5
Internal IGBT
Gate - Emitter Voltage
MCU
COM
+5 V (for MCU or Control power)
,,
IN(UL) IN(VL) IN(WL)
,,
IN(UH) IN(VH) IN(WH)
VFO
RPF = 10 kΩSPM
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 13 www.fairchildsemi.com
FNB41060 Rev. C3
Figure 15. Typical Application Circuit
3rd Notes:
1) To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).
2) By virtue of integrating an application-specific type of HVIC inside the Motion SPM® 45 product, direct coupling to MCU terminals without any optocoupler or transformer isola-
tion is possible.
3) VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (please
refer to Figure 14).
4) CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
5) Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended RS = 100 Ω, CPS = 1 nF).
6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s.
8) The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GND
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
9) Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible.
10) To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended.
11) Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
12) The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals
(recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω).
13) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and
frequency characteristics in CBSC.
14) For the detailed information, please refer to the AN-9070, AN-9071, AN-9072, RD-344, and RD-345.
Fault
+15 V
CBS CBSC
CBS CBSC
CBS CBSC
CSP15 CSPC15
RPF
CBPF
RS
M
VDC
CDCS
Gating UH
Gating VH
Gating WH
Gating UL
Gating VL
Gating WL
CPF
M
C
U
RSW
RSV
RSU
U-Phase Current
V-Phase Current
W-Phase Current
RF
COM
VCC
IN(WL)
IN(VL)
IN(UL)
VFO
CSC
OUT(WL)
OUT(VL)
OUT(UL)
NW(9)
NV(8)
NU(7)
W (6)
V (5)
U (4)
P (3)
(25) VS(U)
(26) VB(U)
(23) VS(V)
(24) VB(V)
(10) CSC
(11) VFO
(14) IN(UL)
(13) IN(VL)
(12) IN(WL)
(20) IN(UH)
(19) IN(VH)
(21) VS(W)
(22) VB(W)
(17) VCC(H)
(18) IN(WH)
Input Signal for
Short-Circuit Protection
CSC
RS
RS
RS
RS
RS
RS
CPS
CPS
CPS
CPS
CPS CPS
IN(WH)
IN(VH)
IN(UH)
COM
VCC
VS(W)
VS(V)
VS(U)
VS(V)
VS(U)
VS(W)
VB(U)
VB(V)
VB(W)
(15) COM
OUT(WH)
OUT(VH)
OUT(UH)
LVIC
HVIC
(1) VTH
(2) RTH
RTH THERMISTOR
Temp. Monitoring
(16) VCC(L)
+5 V
CSPC05 CSP05
. 2.078 mm H ,, ma 19* (mam A a“ - o.“ I699: 16,991 H.509) 16 79] 15 79] (L509) sun 33,5“ 26 I I I Mm 330 u '1qu + I + I as ;§ 4 I W w III W W W q 365$ 35.55 1554 18118 (1.260) um me AIM) $732 13x Insmzx NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE DOES NOT COMPLY TO ANY CURRENT PACKAGING STANDARD B) ALL DIMENSIONS ARE IN MILLIMETERS CI DIMENSIONS ARE EXCLUSIVE OF BURRE‘V MOLD FLASH. AND TIE EAR EXTRUSIONS DH )IS REFERENCE E) [ IIs ASS‘V uUALITv F) DRAWING FILENAME: MODZSAAREVZD hItg://Www.faimhi/dsemi.com/deO/MODZBAAgd! 16.9w 2 10 um *‘w I 1% , I E g; 2 2'1 _ f8 5‘ a fi 3. E I (No.50) SI 5‘! 4130 e:- um _ Iu.5u 9.5a I9“ 77s.: 31 7s —II| IIIII IIEIIIIIIIIIV DEIAILA Ismsw —III¢I¢III¢II¢/ 13x2.s4=33a2 DETAIL B Isms N/AI LAND PATTERN RECOMMENDATIONS
FNB41060 Motion SPM® 45 Series
©2011 Fairchild Semiconductor Corporation 14 www.fairchildsemi.com
FNB41060 Rev. C3
Detailed Package Outline Drawings
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD26AA.pdf
— FAIHGHILD sEMlcmuucrcaa- TRADEMARKS The lolhwrng includes regisIereu and Unvegisleved lrarlenarlrs and servoe marks owned by Faircnild Semoonuuoarana/or is global subsuanes anu s nel rnlerrueu In be an exhauslwelis ulallsucn \Iadermrks AocIIaner'" F
©2011 Fairchild Semiconductor Corporation 15 www.fairchildsemi.com
FNB41060 Rev. C3
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www mm cumrsuerguwaxem Mavkmg gm
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