onsemi 的 FGH40N60SMDF 规格书

0N Semiconductor® www.0nseml.com
© Semiconductor Components Industries, LLC, 2010
September, 2020 − Rev. 3
1Publication Order Number:
FGH40N60SMDF/D
IGBT - Field Stop
600 V, 40 A
FGH40N60SMDF
Description
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
new series of field stop 2nd generation IGBTs offer the optimum
performance for solar inverter, UPS, welder, telecom, ESS and PFC
applications where low conduction and switching losses are essential.
Features
•Maximum Junction Temperature: TJ = 175°C
•Positive Temperature Co−efficient for Easy Parallel Operating
•High Current Capability
•Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 40 A
•High Input Impedance
•Fast Switching: EOFF = 6.5 J/A
•Tightened Parameter Distribution
•This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
Applications
•Solar Inverter, UPS, Welder, PFC, Telecom, ESS
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See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAMS
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FGH40N60SMDF = Specific Device Code
$Y&Z&3&K
FGH40N60
SMDF
G
C
E
G
TO−247−3LD
CASE 340CK
C
G
E
COLLECTOR
(FLANGE)
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Emitter Voltage VCES 600 V
Gate to Emitter Voltage VGES ±20 V
Collector Current TC = 25°CIC80 A
Collector Current TC = 100°C 40 A
Pulsed Collector Current (Note 1) TC = 25°C ICM 120 A
Maximum Power Dissipation TC = 25°CPD349 W
Maximum Power Dissipation TC = 100°C 174 W
Operating Junction Temperature TJ−55 to +175 °C
Storage Temperature Range Tstg −55 to +175 °C
Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds TL300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case (IGBT) RJC 0.43 °C/W
Thermal Resistance, Junction to Case (Diode) RJC 1.45 °C/W
Thermal Resistance, Junction to Ambient RJA 40 °C/W
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking Device Package Reel Size Tape Width Quantity
FGH40N60SMDF FGH40N60SMDF TO−247−3LD N/A N/A 30
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage BVCES VGE = 0 V, IC = 250 A600 − − V
Temperature Coefficient of Breakdown
Voltage
BVCES /
TJ
VGE = 0 V, IC = 250 A−0.6 −V/°C
Collector Cut−Off CurrentICES VCE = VCES, VGE = 0 V − − 250 A
G−E Leakage Current IGES VGE = VGES, VCE = 0 V − − ±400 nA
ON CHARACTERISTICS
G−E Threshold Voltage VGE(th) IC = 250 A, VCE = VGE 3.5 4.6 6.0 V
Collector to Emitter Saturation Voltage VCE(sat) IC = 40 A, VGE = 15 V −1.9 2.5 V
IC = 40 A, VGE = 15 V, TC = 150°C−2.1 −V
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ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted) (continued)
Parameter UnitMaxTypMinTest ConditionsSymbol
DYNAMIC CHARACTERISTICS
Input Capacitance Cies VCE = 30 V, VGE = 0 V, f = 1 MHz −1880 −pF
Output Capacitance Coes −180 −pF
Reverse Transfer Capacitance Cres −50 −pF
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(on) VCC = 400 V, IC = 40 A,
RG = 6  VGE = 15 V,
Inductive Load, TC = 25°C
−12 −ns
Rise Time tr−20 −ns
Turn−Off Delay Time td(off) −92 −ns
Fall Time tf−13 20 ns
Turn−On Switching Loss Eon −1.3 −mJ
Turn−Off Switching Loss Eoff −0.26 −mJ
Total Switching Loss Ets −1.56 −mJ
Turn−On Delay Time td(on) VCC = 400 V, IC = 40 A,
RG = 6  VGE = 15 V,
Inductive Load, TC = 150°C
−12 −ns
Rise Time tr−19 −ns
Turn−Off Delay Time td(off) −97 −ns
Fall Time tf−14 21 ns
Turn−On Switching Loss Eon −2.09 −mJ
Turn−Off Switching Loss Eoff −0.44 −mJ
Total Switching Loss Ets −2.53 −mJ
Total Gate Charge QgVCE = 400 V, IC = 40 A,
VGE = 15 V
−119 −nC
Gate to Emitter Charge Qge −13 −nC
Gate to Collector Charge Qgc −58 −nC
ELECTRICAL CHARACTERISTICS OF THE DIODE (TC = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Diode Forward Voltage VFM IF = 20 A TC = 25°C−1.3 1.7 V
TC = 150°C−1.2 −
Diode Reverse Recovery Time trr IF = 20 A,
diF/dt = 200 A/s
TC = 25°C−70 90 ns
TC = 150°C−126 −
Diode Reverse Recovery Charge Qrr TC = 25°C−207 290 nC
TC = 150°C−638 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
Figure 5. Saturation Voltage vs. Case Temperature
at Variant Current Level
Figure 6. Saturation Voltage vs VGE
0246
VCE, Collector−Emitter Voltage (V)
IC, Collector Current (A)
0246
VCE, Collector−Emitter Voltage (V)
IC, Collector Current (A)
01234
VCE, Collector−Emitter Voltage (V)
IC, Collector Current (A)
0
30
60
90
120
02 4 810612
2.5
3.0
25 50 75 100 150
TC, Case Temperature [°C]
VCE, Collector−Emitter Voltage (V)
0
4
8
12
16
20
481216
20
VGE, Gate−Emitter Voltage (V)
VCE, Collector−Emitter Voltage (V)
0
30
60
90
120 20 V
15 V 12 V
10 V
TC = 25°C
VGE = 8 V
20 V
15 V 12 V 10 V
TC = 150°C
VGE = 8 V
0
30
60
90
120
Common Emitter
VGE = 15 V
TC = 25°C
TC = 150°C
0
30
60
90
120 Common Emitter
VCE = 20 V
TC = 25°C
TC = 150°C
IC, Collector Current (A)
VGE, Gate−Emitter Voltage (V)
80 A
40 A
Common Emitter
VGE = 15 V
IC = 20 A
125
2.0
1.5
1.0
40 A 80 A
Common Emitter
TC = −40°C
IC = 20 A
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn−On Characteristics
vs. Gate Resistance
VGE, Gate−Emitter Voltage (V)
VCE, Collector−Emitter Voltage (V)
4 8 12 16 20
VGE, Gate−Emitter Voltage (V)
VCE, Collector−Emitter Voltage (V)
0.1 11030
VCE, Collector−Emitter Voltage (V)
Capacitance (pF)
040 80 120
Qg, Gate Charge (nC)
VGE, Gate−Emitter Voltage (V)
0 10 100 1000
VCE, Collector−Emitter Voltage (V)
IC, Collector Current (A)
100
10
1
01020304050
RG, Gate Resistance ()
Switching Time (ns)
4 8 121620
0
4
8
12
16
20
40 A 80 A
Common Emitter
TC = 25°C
IC = 20 A
0
4
8
12
16
20
80 A
40 A
IC = 20 A
Common Emitter
TC = 150°C
0
1000
2000
3000
4000
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25°C
Cies
Coes
Cres
0
3
6
9
12
15
300 V
200 V
VCC = 100 V
Common Emitter
TC = 25°C
0.01
0.1
1
10
100
300
1 ms
10 ms
DC
*Notes:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
100 s
10 s
td(on)
tr
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25°C
TC = 150°C
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 13. Turn−Off Characteristics
vs. Gate Resistance
Figure 14. Turn−On Characteristics
vs. Collector Current
Figure 15. Turn−Off Characteristics
vs. Collector Current
Figure 16. Switching Loss vs. Gate
Resistance
Figure 17. Switching Loss vs. Collector
Current
Figure 18. Turn−Off Switching SOA
Characteristics
1000
100
10
1
01020304050
RG, Gate Resistance ()
Switching Time (ns)
20 30 40 50 60 70
IC, Collector Current (A)
Switching Time (ns)
IC, Collector Current (A)
Switching Time (ns)
RG, Gate Resistance ()
Switching Loss (mJ)
20 30 40 50 60 70
IC, Collector Current (A)
Switching Loss (mJ)
110 100 1000
VCE, Collector −Emitter Voltage (V)
IC, Collector Current (A)
td(off)
tf
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25°C
TC = 150°C
1
10
100
1000
Common Emitter
VGE = 15 V, RG = 6
TC = 25°C
TC = 150°C
tr
td(on)
1
10
100
1000
Common Emitter
VGE = 15 V, RG = 6
TC = 25°C
TC = 150°C
td(off)
tf
20 30 40 50 60 70 80
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25°C
TC = 150°C
Eon
Eoff
0.1
1
5
0 1020304050
0.1
1
6
Common Emitter
VGE = 15 V, RG = 6
TC = 25°C
TC = 150°C
Eon
Eoff
80
1
10
100
200
Safe Operating Area
VGE = 15 V, TC = 150°C
80
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 19. Forward Characteristics Figure 20. Reverse Current
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
VF
, Forward Voltage (V)
IF
, Forward Current (A)
VR, Reverse Voltage (V)
IR, Reverse Current (A)
IF
, Forward Current (A)
Qrr, Stored Recovery Charge (nC)
Rectangular Pulse Duration (sec)
Thermal Response (Zjc)
1
10
100
TC = 25°C
TC = 75°C
TC = 150°C
TC = 75°C
TC = 150°C
TC = 25°C
0 0.5 1.0 1.5 2.0 2.5 1E−3
0.01
0.1
1
10
100
0
100
TC = 25°C
TC = 75°C
TC = 150°C
0 100 200 300 400 500 600
0
50
100
150
200
250
300
0
35
200 A/s
diF/dt = 100 A/s
5 10152025303540 40
60
80
100
0
12
diF/dt = 100 A/s
200 A/s
5 10152025303540
trr, Reverse Recovery Time (ns)
IF
, Forward Current (A)
Figure 23. Transient Thermal Impedance of IGBT
0.006
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
Single Pulse
0.5
PDM
t1t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zjc + TC
0.00001 0.0001 0.001 0.01 0.1 1
0N Semiwndudw" m DATE 3 J MEIR MILLIMETERS MIN NOM MAX A 4.58 4.70 4.82 A1 2.20 2.40 2.60 NOYES: UNLESS OTHERWISE SPECIFIED. A DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD A2 1_4o 1_5o 150 FLASH, AND TIE EAR EXTRusIONS b 1 17 1 26 1 35 5 ALL DIMENSIONS ARE IN MILLIMETERS - - - c, DRAWING CONFORMS TO ASME Y14.5 - 2009. b2 1.53 1.65 1.77 D. DIMENSION A1TO BE MEASURED IN THE REGION DEFINED 5v L1. I34 242 254 2.66 E LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BV L1 c 0.51 0.61 0.71 D 20.32 20.57 20.82 D1 13.08 — ~ D2 0.51 0.93 1 .35 E 15.37 15.62 15.87 E1 12.31 — ~ ° E2 4.96 5.08 5.20 e 5.56 L 15.75 16.00 16.25 Q) P 3.51 3.58 3.65 (D P1 6.60 6.80 7.00 O 5.34 5.46 5.58 S 5.34 5.46 5.58 ON SemIcunduclm and are lIademavks aI SemIchduclur Cnmpunenls lnduslIIes LLC dba ON SEmIchducIDr Dr IKS suhsIdIarIes In Ina Unnau Slales andJuI amev cmmmes ON SemIcunduchr vesewes Ina IIgM Ia make changes wIIhmA Yunhev nahce Ia any pruduns heIeIn ON Semenduc‘nv makes m7 wananIy represenlalmn m guaranlee regardmg Ina smIaInIIIy aI ILS pmducls 1m any panama purpase nnv dues ON SemIcnnduclm assume any IIaInIIIy avIsIng auIaI Ina apphcahan m use In any pmduclnv cIrcuI| and spEcIYIcaHy dIscIaIms any and aII IIaInIIIy IncIudIng wI|hDuHImI131Iun specIaI aansaauanuaI m IncIdenlaI damages ON SemImnduchr dues nn| aanyay any IIcense under I15 paIanI ngnua "Dr Ina ngma av n|hers
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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