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TRF372017
SLWS224E –AUGUST 2010–REVISED JANUARY 2016
TRF372017 Integrated IQ Modulator PLL/VCO
1 Features 3 Description
TRF372017 is a high-performance, direct up-
1• Fully Integrated PLL/VCO and IQ Modulator conversion device, integrating a high-linearity, low-
• LO Frequency from 300 MHz to 4.8 GHz noise IQ modulator and an integer-fractional
• 76-dBc Single-Carrier WCDMA ACPR at –8-dBm PLL/VCO. The VCO uses integrated frequency
Channel Power dividers to achieve a wide, continuous tuning range of
300 MHz to 4800 MHz. The LO is available as an
• OIP3 of 26 dBm output with independent frequency dividers. The
• P1dB of 11.5 dBm device also accepts input from an external LO or
• Integer/Fractional PLL VCO. The modulator baseband inputs can be biased
either internally or externally. Internal DC offset
• Phase Noise –132 dBc/Hz adjustment enables carrier cancellation. The device is
(at 1 MHz, fVCO of 2.3 GHz) controlled through a 3-wire serial programming
• Low Noise Floor: –160 dBm/Hz interface (SPI). A control pin invokes power-save
• Input Reference Frequency Range: Up to mode to reduce power consumption while keeping
160 MHz the VCO locked for fast start-up.
• VCO Frequency Divided by 1-2-4-8 Output Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
2 Applications TRF372017 VQFN (48) 7.00 mm × 7.00 mm
• Wireless Infrastructure (1) For all available packages, see the orderable addendum at
– CDMA: IS95, UMTS, CDMA2000, TD-SCDMA the end of the data sheet.
– TDMA: GSM, IS-136, EDGE/UWC-136
– LTE
• Wireless Local Loop
• Point-to-Point Wireless Access
• Wireless MAN Wideband Transceivers
spacing
Block Diagram
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
7.4 Device Functional Modes........................................ 33
1 Features.................................................................. 17.5 Register Maps......................................................... 34
2 Applications ........................................................... 18 Application and Implementation ........................ 46
3 Description ............................................................. 18.1 Application Information............................................ 46
4 Revision History..................................................... 28.2 Typical Application ................................................. 46
5 Pin Configuration and Functions......................... 39 Power Supply Recommendations...................... 50
6 Specifications......................................................... 510 Layout................................................................... 51
6.1 Absolute Maximum Ratings ...................................... 510.1 Layout Guidelines ................................................. 51
6.2 Recommended Operating Conditions....................... 510.2 Layout Example .................................................... 51
6.3 Thermal Information.................................................. 511 Device and Documentation Support ................. 52
6.4 Electrical Characteristics........................................... 611.1 Device Support...................................................... 52
6.5 Timing Requirements - SPI: Writing Phase .............. 811.2 Community Resources.......................................... 52
6.6 Timing Requirements - SPI: Read-Back Phase........ 811.3 Trademarks........................................................... 52
6.7 Typical Characteristics............................................ 10 11.4 Electrostatic Discharge Caution............................ 52
7 Detailed Description............................................ 23 11.5 Glossary................................................................ 52
7.1 Overview ................................................................. 23 12 Mechanical, Packaging, and Orderable
7.2 Functional Block Diagram....................................... 23 Information ........................................................... 52
7.3 Feature Description................................................. 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (September 2013) to Revision E Page
• Added Feature Description section, Device Functional Modes section, Application and Implementation section,
Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section.................................................................................................. 1
Changes from Revision C (May 2012) to Revision D Page
• Changed text string from Reg 1, B[30..28] = [000] to Reg 0, B[30..28] = [000] in the Description column associated
with RB_REG<0>, RB_REG<1>, and RB_REG<2> ............................................................................................................ 44
Changes from Revision B (March 2012) to Revision C Page
• Added graph titles to Figure 56 and 57 that were missing in Revision B............................................................................. 17
Changes from Revision A (August 2010) to Revision B Page
• Deleted Comments column from Table 1............................................................................................................................... 8
• Changed Figures 12 through Figure 27 ............................................................................................................................... 10
• Changed the text under Integer and Fractional Mode Selection through Practical Limit on Maximum PFD Frequency..... 23
• Changed RDIV = 20 to RDIV = 2 in Setup Example for Fractional Mode............................................................................ 26
• Changed Recommended Value of EN_LD_ISOURCE from 1 to 0 in Table 1..................................................................... 27
• Changed column heading from Default Value to Reset Value in register tables 1, 2, 3, 4, 5, 6, and 7............................... 34
• Added recommended programming [xx] to various Description statements in register tables 2, 5, 6, and 7...................... 37
• Changed Register 4, Bit21/Bit22 Description statement from Off to Normal. ...................................................................... 39
• Changed Column heading from Default Value to Reset Value in Readback mode section, Register 0.............................. 43
• Changed Bit5 name from CHIP_ID to CHIP_ID _0 and changed Bit6 name from NU to CHIP_ID_1, Reset Value to 1.... 44
• Changed image in Figure 87. .............................................................................................................................................. 48
• Changed the text in the Application Layout, and added link to Figure 95............................................................................ 51
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VCC_LO1
13
14
15
16
17
1
2
3
4
5
44
45
46
47
48
36
35
34
33
32
6
7
8
9
10
18
19
20
21
22
31
30
29
28
27
39
40
41
42
43
VCC_DIG
GND_DIG
GND
LD
BBQ_N
BBQ_P
GND
RSVD
GND
RFOUT
VCC_MIX
GND
LO_OUT_P
LO_OUT_N
CLK
DATA
LE
EXT_VCO
BBI_N
BBI_P
GND
REFIN
GND
VCC_PLL
CP_OUT
GND
GND
VTUNE
VCC_VCO2
GND
VCC_LO2
GND
GND
VCC_D2S
GND
GND
GND 11
12
23
24
26
25
37
38
PS
RDBK
GND
GND
GND
GND
GND
GND
VCC_VCO1
SCAN_EN
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5 Pin Configuration and Functions
RGZ Package
48-Pin VQFN
Top View
Pin Functions
PIN I/O DESCRIPTION
NAME NO.
Base-band in-phase input: positive terminal. Internal 5 kΩto VCM generator. If VCM is
BBI_P 27 I internally generated (PWD_BB_VCM = 0), external AC coupling caps and 100-Ωdifferential
termination to BBI_N is required.
Base-band in-phase input: negative terminal. Internal 5 kΩto VCM generator. If VCM is
BBI_N 28 I internally generated (PWD_BB_VCM = 0), external AC coupling caps and 100-Ωdifferential
termination to BBI_P is required.
Base-band in-quadrature input: negative terminal. Internal 5 kΩto VCM generator. If VCM is
BBQ_N 9 I internally generated (PWD_BB_VCM = 0), external AC coupling caps and 100-Ωdifferential
termination to BBQ_P is required.
Base-band in-quadrature input: positive terminal. Internal 5 kΩto VCM generator. If VCM is
BBQ_P 10 I internally generated (PWD_BB_VCM = 0), external AC coupling caps and 100-Ωdifferential
termination to BBQ_N is required.
CLK 47 I SPI clock input. Digital input. High impedance.
CP_OUT 40 O Charge pump output
DATA 46 I SPI data input. Digital input. High impedance.
EXT_VCO 36 I External local oscillator input. High impedance. Normally AC-coupled.
6, 8, 11, 12, 13,
15, 16, 17, 19,
GND 22, 23, 24, 25, — Ground
26, 29, 31, 37,
39, 42, 44
GND_DIG 4 — Digital ground
PLL lock detect output, as configured by MUX_CTRL. Digital output pins can source or sink
LD 5 O up to 8 mA of current.
LE 45 I SPI latch enable. Digital input. High impedance.
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Pin Functions (continued)
PIN I/O DESCRIPTION
NAME NO.
Local oscillator output: negative terminal. Open collector output. A pullup is required.
LO_OUT_N 33 O Normally AC-coupled.
Local oscillator output: positive terminal. Open collector output. A pullup is required. Normally
LO_OUT_P 34 O AC-coupled.
PS 1 I Power saving mode enable (Low = normal mode; High = power saving mode)
SPI internal registers readback output. Digital output pins can source or sink up to 8 mA of
RDBK 2 O current.
REFIN 43 I Reference clock input. High impedance. Normally AC-coupled.
RFOUT 18 O RF output. Internally matched to 50-Ωoutput. Normally AC-coupled.
RSVD 14 — Reserved. Normally open.
SCAN_EN 48 I Internal testing mode digital input. Connect to ground in normal operation
VCC_D2S 20 — 5-V modulator output buffer power supply
VCC_DIG 3 — 3.3-V digital power supply
VCC_LO1 7 — 3.3-V Tx path local oscillator chain power supply
VCC_LO2 30 — 3.3-V output local oscillator chain power supply
VCC_MIX 21 — 5-V modulator power supply
VCC_PLL 41 — 3.3-V PLL power supply
VCC_VCO1 35 — 3.3-V VCO power supply
VCC_VCO2 32 — 3.3-V to 5-V VCO power supply
VTUNE 38 I VCO control voltage input
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage(3) –0.3 5.5 V
Digital I/O voltage –0.3 VCC + 0.5 V
TJOperating virtual junction temperature –40 150 °C
TAOperating ambient temperature –40 85 °C
Tstg Storage temperature –40 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) ESD rating not valid for RF sensitive pins.
(3) All voltage values are with respect to network ground terminal.
6.2 Recommended Operating Conditions
MIN NOM MAX UNIT
VCC5V 5-V power supply voltage 4.5 5 5.5 V
VCC3V 3.3-V power supply voltage 3 3.3 3.6 V
VCC_VCO2 3.3-V to 5-V power supply voltage 3 3.3 5.5 V
TAOperating ambient temperature –40 85 °C
TJOperating virtual junction temperature –40 125 °C
6.3 Thermal Information
TRF372017
THERMAL METRIC(1) RGZ (VQFN) UNIT
48 PINS
RθJA Junction-to-ambient thermal resistance 30.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 10.0 °C/W
RθJB Junction-to-board thermal resistance 8.0 °C/W
ψJT Junction-to-top characterization parameter 0.5 °C/W
ψJB Junction-to-board characterization parameter 7.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.4 Electrical Characteristics
VCC5V = 5 V, VCC3V = 3.3 V, VCC_VCO2 = 3.3 V, TA= 25°C, internal LO, internal VCM (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC PARAMETERS
3.3-V power supply, LO on 200 250 mA
ICC Total supply current, LO on(1) 5-V power supply, LO on 117 148 mA
VCC_DIG, LO on 3 5 mA
VCC_LO1 and VCC_LO2 121 130 mA
VCC_D2S 43 60 mA
VCC_MIX 74 90 mA
Supply current, LO on(1) VCC_VCO1 20 28 mA
VCC_VCO2 17 20
LO_OUT_N and LO_OUT_P 17 28 mA
VCC_PLL 24 40 mA
3.3-V power supply, LO off 165 204 mA
Total supply current, LO off(1) 5-V power supply, LO off 117 149 mA
3.3-V power supply, PS on 65 94 mA
Total supply current, PS on(1) 5-V power supply, PS on 51 73 mA
BASEBAND INPUTS
Externally generated 1.7 V
Vcm I and Q input DC common voltage(2) Set internally 1.6 1.7 1.85 V
BW 1-dB input frequency bandwidth 1000 MHz
Resistance 5 kΩ
ZIInput Impedance Parallel Capacitance 3 pF
BASEBAND INPUT DC OFFSET CONTROL D/A(3)
Number of bits Programmed through SPI 8
|BBI_P - BBI_N| or |BBQ_P - BBQ_N|, 100-Ω
Programmable DC offset setting 0.02 V
differential load
DIGITAL INTERFACE
VIH High-level input voltage 2 3.3 V
VIL Low-level input voltage 0 0.8 V
VOH High-level output voltage Referenced to VCC_DIG 0.8 × Vcc V
VOL Low-level output voltage Referenced to VCC_DIG 0.2 × Vcc V
REFERENCE OSCILLATOR PARAMETERS
Fref Reference frequency 160 MHz
Reference input sensitivity 0.2 3.3 Vp-p
Parallel capacitance 5 pF
Reference input impedance Parallel resistance 3900 Ω
PFD CHARGE PUMP
PFD frequency(4) 100 MHz
ICP Charge pump current SPI programmable 1.94 mA
IQ MODULATOR OUTPUT, FLO = 750 MHz
Output RMS voltage over se input I (or Q) RMS
G Voltage gain –4 –3.2 –2.4 dB
voltage
P1dB Output compression point 11 dBm
IP3 Output IP3 2 input tones at 4.5 and 5.5 MHz 26 dBm
IP2 Output IP2 2 input tones at 4.5 and 5.5 MHz 56.5 dBm
Carrier feedthrough Unadjusted –43.5 dBm
Sideband suppression Unadjusted –46 dBc
Output return loss 10 dB
(1) Maximum current is worst-case overvoltage, temperature, and expected process variations.
(2) The TRF372017 can generate the input common voltage internally or can accept an external common mode voltage. The two modes
are selectable through SPI.
(3) When the internal input common mode voltage is selected, it is possible to apply some DC offset with the integrated D/A.
(4) See Application Information for discussion on selection of PFD frequency.
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Electrical Characteristics (continued)
VCC5V = 5 V, VCC3V = 3.3 V, VCC_VCO2 = 3.3 V, TA= 25°C, internal LO, internal VCM (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DC only to BB inputs; 13-MHz offset from LO; Pout
Output noise –162 dBm/Hz
= –10 dBm
IQ MODULATOR OUTPUT, FLO = 900 MHz
Output RMS voltage over se input I (or Q) RMS
G Voltage gain –4 –3.4 –2.4 dB
voltage
P1dB Output compression point 11 dBm
IP3 Output IP3 2 input tones at 4.5 and 5.5 MHz 26.5 dBm
IP2 Output IP2 2 input tones at 4.5 and 5.5 MHz 56.5 dBm
Carrier feedthrough Unadjusted –43 dBm
Sideband suppression Unadjusted –45 dBc
Output return loss 10 dB
DC only to BB inputs; 13-MHz offset from LO; Pout
Output noise –160 dBm/Hz
= –10 dBm
IQ MODULATOR OUTPUT, FLO = 2150 MHz
Output RMS voltage over se input I (or Q) RMS
G Voltage gain –4.2 –3.1 –2 dB
voltage
P1dB Output compression point 11.5 dBm
IP3 Output IP3 2 input tones at 4.5 and 5.5 MHz 25 dBm
IP2 Output IP2 2 input tones at 4.5 and 5.5 MHz 56 dBm
Carrier feedthrough Unadjusted –40 dBm
Sideband suppression Unadjusted –32 dBc
Output return loss 10 dB
DC only to BB inputs; 13-MHz offset from LO; Pout
Output noise –158 dBm/Hz
= –10 dBm
1 WCDMA signal; Pout = –8 dBm –75
ACPR Adjacent-channel power ratio dBc
2 WCDMA signals; Pout = –11 dBm per carrier 71
IQ MODULATOR OUTPUT, FLO = 2700 MHz
Output RMS voltage over se input I (or Q) RMS
G Voltage gain –4.1 –2.7 –1.3 dB
voltage
P1dB Output compression point 12 dBm
IP3 Output IP3 2 input tones at 4.5 and 5.5 MHz 26.5 dBm
IP2 Output IP2 2 input tones at 4.5 and 5.5 MHz 50 dBm
Carrier feedthrough Unadjusted –43 dBm
Sideband suppression Unadjusted –41 dBc
Output return loss 10 dB
DC only to BB inputs; 13-MHz offset from LO; Pout
Output noise –153 dBm/Hz
= –10 dBm
LOCAL OSCILLATOR
VCO range 2400 4800
Divide by 2 1200 2400
FVCO Frequency range MHz
Divide by 4 600 1200
Divide by 8 300 600
Free running VCO 10 kHz –85 dBc/Hz
Phase noise, Fout = 2.3 GHz 1 MHz –132 dBc/Hz
10 MHz –150 dBc/Hz
50 MHz –153 dBc/Hz
PLO LO output power(5) 100-Ωdifferential, external load; single-ended –2.5 3 dBm
(5) With VCO frequency at 4.6 GHz and LO in divide-by-2 mode at 2.3 GHz
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1st Write
clock
pulse
32nd
Write
clock
pulse
tw
CLOCK
DATA
LATCH
ENABLE
REGISTER WRITE
DB1
AddressBit1
DB2
AddressBit2
DB3
AddressBit3 DB29 DB30
DB0 (LSB)
AddressBit0
tsu3
tsu1 tht(CLK)
DB31 (MSB)
t(CL)
t(CH)
tsu2
Endof Write
Cyclepulse
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6.5 Timing Requirements - SPI: Writing Phase(1)
MIN TYP MAX UNIT
thHold time, data to clock 20 ns
tSU1 Setup time, data to clock 20 ns
T(CH) Clock low duration 20 ns
T(CL) Clock high duration 20 ns
tSU2 Setup time, clock to enable 20 ns
t(CLK) Clock period 50 ns
tWEnable time 50 ns
tSU3 Setup time, latch to data 70 ns
(1) See Figure 1 for timing diagram.
6.6 Timing Requirements - SPI: Read-Back Phase(1)
MIN TYP MAX UNIT
thHold time, data to clock 20 ns
tSU1 Setup time, data to clock 20 ns
T(CH) Clock low duration 20 ns
T(CL) Clock High duration 20 ns
tSU2 Setup time, clock to enable 20 ns
tdDelay time, clock to readback data output 10 ns
tWEnable time(2) 50 ns
t(CLK) Clock period 50 ns
(1) See Figure 2 for timing diagram.
(2) Equals Clock period
Figure 1. SPI Write Timing Diagram
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J; u mu w u ; r11:
32nd
Write
clock
pulse
1st Read
clock pulse 2nd Read
clock pulse
32nd Read
clock pulse
33rd Read
clock pulse
“End of Write Cycle”
pulse
ReadBack
Data Bit31
Read
Back
Data
Bit1
Read
Back
Data
Bit29
ReadBack
Data Bit30
ReadBack
Data Bit 0
DB31(MSB)
1st Write
clock
pulse
tsu1 tht(CLK)
32nd Write
clock pulse
DB30
DB29
DB2
Address Bit 2
DB1
Address Bit1
DB0 (LSB)
Address Bit 0
CLOCK
DATA
CLOCK
READBACK DATA
R EGIS TER WR ITEREAD BA CK
td
tsu2
tw
LATCH ENABLE
T(CL)
T(CH)
tsu3
LATCH ENABLE
DB3
Address Bit 3
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Figure 2. SPI Read-Back Timing Diagram
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Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G001
F_LO_OUT = 2.6 GHz
VCC = 3.3, 5 V
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6.7 Typical Characteristics
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 3. Open-Loop Phase Noise Figure 4. Open Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
Figure 5. Open Loop Phase Noise Figure 6. Open Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
Figure 7. Open Loop Phase Noise Figure 8. Open Loop Phase Noise
vs Frequency and Supply Voltage vs Frequency and Supply Voltage
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Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C TA= 25°C
TA= 85°C
G011
F_LO_OUT = 650 MHz
VCC = 3.3, 5 V
Div 4 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G012
F_LO_OUT = 325 MHz
VCC = 3.3, 5 V
Div 8 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G009
F_LO_OUT = 2.6 GHz
VCC = 3.3, 5 V
Div 1 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G010
F_LO_OUT = 1.3 GHz
VCC = 3.3, 5 V
Div 2 Mode
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Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 9. Open Loop Phase Noise Figure 10. Open Loop Phase Noise
vs Frequency and Supply Voltage vs Frequency and Supply Voltage
Figure 11. Closed Loop Phase Noise Figure 12. Closed Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
Figure 13. Closed Loop Phase Noise Figure 14. Closed Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
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Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G017
F_LO_OUT = 4 GHz
VCC = 3.3, 5 V
Div 1 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G018
F_LO_OUT = 2 GHz
VCC = 3.3, 5 V
Div 2 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G015
F_LO_OUT = 850 MHz
VCC = 3.3, 5 V
Div 4 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G016
F_LO_OUT = 425 MHz
VCC = 3.3, 5 V
Div 8 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G013
F_LO_OUT = 3.4 GHz
VCC = 3.3, 5 V
Div 1 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G014
F_LO_OUT = 1.7 GHz
VCC = 3.3, 5 V
Div 2 Mode
TRF372017
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Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 15. Closed Loop Phase Noise Figure 16. Closed Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
Figure 17. Closed Loop Phase Noise Figure 18. Closed Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
Figure 19. Closed Loop Phase Noise Figure 20. Closed Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
12 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
% TEXAS INSTRUMENTS mm“)!
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C TA= 25°C
TA= 85°C
G023
F_LO_OUT = 1.15 GHz
VCC = 3.3, 5 V
Div 4 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C TA= 25°C
TA= 85°C
G024
F_LO_OUT = 575 MHz
VCC = 3.3, 5 V
Div 8 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G021
F_LO_OUT = 4.6 GHz
VCC = 3.3, 5 V
Div 1 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G022
F_LO_OUT = 2.3 GHz
VCC = 3.3, 5 V
Div 2 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C TA= 25°C
TA= 85°C
G019
F_LO_OUT = 1 GHz
VCC = 3.3, 5 V
Div 4 Mode
Frequency (Hz)
Phase Noise (dBc/Hz)
-160
-140
-120
-100
-80
-60
-40
1k 10k 100k 1M 10M 40M
TA= -40°C
TA= 25°C
TA= 85°C
G020
F_LO_OUT = 500 MHz
VCC = 3.3, 5 V
Div 8 Mode
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Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 21. Closed Loop Phase Noise Figure 22. Closed Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
Figure 23. Closed Loop Phase Noise Figure 24. Closed Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
Figure 25. Closed Loop Phase Noise Figure 26. Closed Loop Phase Noise
vs Frequency and Temperature vs Frequency and Temperature
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 13
/
Frequency (MHz)
Voltage Gain (dB)
300 800 1300 1800 2300 2800 3300 3800 4300 4800
-7
-6
-5
-4
-3
-2
-1
0
1
2
TA= -40°C
TA= 25°C
TA= 85°C
G030
Frequency (MHz)
Noise at 13-MHz Offset (dBm/Hz)
350 700 1050 1400 1750 2100 2450 2800 3150 3500
-190
-180
-170
-160
-150
-140
-130
TA= -40°C
TA= 25°C
TA= 85°C
G027
VCC = 3.3, 5 V
External VCO
PO= -10dBm
Frequency (MHz)
Noise at 13-MHz Offset (dBm/Hz)
350 700 1050 1400 1750 2100 2450 2800 3150 3500
-190
-180
-170
-160
-150
-140
-130
VCC = 3 V
VCC = 3.3 V
VCC = 3.6 V
G028
TA= 25°C
External VCO
PO= -10dBm
Frequency (MHz)
Noise at 13-MHz Offset (dBm/Hz)
350 700 1050 1400 1750 2100 2450 2800 3150 3500
-190
-180
-170
-160
-150
-140
-130
TA= -40°C
TA= 25°C
TA= 85°C
G025
VCC = 3.3, 5 V
Internal VCO
PO= -10 dBm
Frequency (MHz)
Noise at 13-MHz Offset (dBm/Hz)
350 700 1050 1400 1750 2100 2450 2800 3150 3500
-190
-180
-170
-160
-150
-140
-130
VCC = 3 V
VCC = 3.3 V
VCC = 3.6 V
G026
TA= 25°C
Internal VCO
PO= -10dBm
TRF372017
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Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 27. Noise at 13-MHz Offset Figure 28. Noise at 13-MHz Offset
vs Frequency and Temperature With Internal VCO vs Frequency and Supply Voltage With Internal VCO
Figure 29. Noise at 13-MHz Offset Figure 30. Noise at 13-MHz Offset
vs Frequency and Temperature With External VCO vs Frequency and Supply Voltage With External VCO
Figure 31. Noise at 13-MHz Offset Figure 32. Voltage Gain vs Frequency and Temperature
vs Output Power and Frequency
14 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
L x
Frequency (MHz)
Voltage Gain (dB)
2610 2620 2630 2640 2650 2660 2670 2680 2690
-3.5
-3.4
-3.3
-3.2
-3.1
-3
-2.9
-2.8
-2.7
TA= -40°C
TA= 25°C
TA= 85°C
G035
Common-Mode Voltage (V)
Voltage Gain (dB)
1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9
-4.4
-4.2
-4
-3.8
-3.6
-3.4
-3.2
-3
-2.8
-2.6
-2.4
f = 750 MHz
f = 900 MHz
f = 1500 MHz
f = 2150 MHz
f = 2700 MHz
G036
Frequency (MHz)
Voltage Gain (dB)
1465 1470 1475 1480 1485 1490 1495 1500 1505 1510
-4.3
-4.2
-4.1
-4
-3.9
-3.8
-3.7
-3.6
TA= -40°C
TA= 25°C
TA= 85°C
G033
Frequency (MHz)
Voltage Gain (dB)
2100 2110 2120 2130 2140 2150 2160 2170
-4.4
-4.3
-4.2
-4.1
-4
-3.9
-3.8
-3.7
-3.6
-3.5
-3.4
TA= -40°C
TA= 25°C
TA= 85°C
G034
Frequency (MHz)
Voltage Gain (dB)
720 725 730 735 740 745 750 755 760 765 770
-3.5
-3.4
-3.3
-3.2
-3.1
-3
TA= -40°C
TA= 25°C
TA= 85°C
G031
Frequency (MHz)
Voltage Gain (dB)
880 885 890 895 900 905 910 915 920
-3.6
-3.55
-3.5
-3.45
-3.4
-3.35
-3.3
-3.25
-3.2
TA= -40°C
TA= 25°C
TA= 85°C
G032
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Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 33. Voltage Gain Figure 34. Voltage Gain
vs Frequency and Temperature at 750 MHz vs Frequency and Temperature at 900 MHz
Figure 35. Voltage Gain Figure 36. Voltage Gain
vs Frequency and Temperature at 1500 MHz vs Frequency and Temperature at 2150 MHz
Figure 37. Voltage Gain Figure 38. Voltage Gain
vs Frequency and Temperature at 2650 MHz vs Common-Mode Voltage and Frequency
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 15
‘5‘ TEXAS INSTRUMENTS
Frequency (MHz)
P1dB (dBm)
850 860 870 880 890 900 910 920 930 940 950
10.5
10.6
10.7
10.8
10.9
11
11.1
11.2
11.3
11.4
TA= -40°C
TA= 25°C
TA= 85°C
G041
Frequency (MHz)
P1dB (dBm)
300 800 1300 1800 2300 2800 3300 3800 4300 4800
5
6
7
8
9
10
11
12
13
14
15
TA= -40°C
TA= 25°C
TA= 85°C
G039
Baseband Voltage Amplitude (mV)
Voltage Gain (dB)
0 100 200 300 400 500 600 700 800 900 1000
-4.5
-4.3
-4.1
-3.9
-3.7
-3.5
-3.3
-3.1
-2.9
-2.7
-2.5
f = 750 MHz
f = 900 MHz
f = 1500 MHz
f = 2150 MHz
f = 2700 MHz
G037
BB Voltage is Single-Ended RMS
Frequency (MHz)
Voltage Gain (dB)
300 800 1300 1800 2300 2800 3300 3800 4300 4800
-5
-4
-3
-2
-1
0
1
VCC = 3 V
VCC = 3.3 V
VCC = 3.6 V
G038
TRF372017
SLWS224E –AUGUST 2010–REVISED JANUARY 2016
www.ti.com
Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 39. Voltage Gain Figure 40. Voltage Gain vs Frequency and Supply Voltage
vs Baseband Voltage Amplitude and Frequency
Figure 41. P1dB vs Frequency and Temperature Figure 42. P1dB vs Frequency and Temperature at 750 MHz
Figure 43. P1dB vs Frequency and Temperature at 900 MHz Figure 44. P1dB vs Frequency and Temperature at 1500 MHz
16 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
5 y
Frequency (MHz)
OIP3 (dBm)
300 800 1300 1800 2300 2800 3300 3800 4300 4800
14
16
18
20
22
24
26
28
30
32
34
TA= -40°C
TA= 25°C
TA= 85°C
G047
Common-Mode Voltage (V)
P1dB (dBm)
1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9
8
9
10
11
12
13
14
f = 750 MHz
f = 900 MHz
f = 1500 MHz
f = 2150 MHz
f = 2700 MHz
G045
Frequency (MHz)
P1dB (dBm)
300 800 1300 1800 2300 2800 3300 3800 4300 4800
6
7
8
9
10
11
12
13
14
15
VCC = 3 V
VCC = 3.3 V
VCC = 3.6 V
G046
TRF372017
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Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 45. P1dB vs Frequency and Temperature at 2150 MHz Figure 46. P1dB vs Frequency and Temperature at 2700 MHz
Figure 47. P1dB vs Common-Mode Voltage and Frequency Figure 48. P1dB vs Frequency and Supply Voltage
Figure 49. OIP3 vs Frequency and Temperature Figure 50. OIP3 vs Temperature and Frequency at 900 MHz
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 17
{L} TEXAS INSTRUMENTS
OIP3 (dBm)
1.5 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9
Common-Mode Voltage (V)
G053
29
28
27
26
25
24
23
22
21
TA= 25 C°
f = 750 MHz
f = 1500 MHz
f = 2150 MHz
f = 900 MHz
f = 2700 MHz
f = 2150 MHzf = 900 MHz
f = 750 MHz
f = 2700 MHz
f = 1500 MHz
BB Voltage is Single-Ended RMS
30
29
28
27
26
25
24
23
22
21
20
OIP3 (dBm)
0 100 200 300 400 500 600 700 800 900 1000
Baseband Voltage Amplitude (mV)
G083
Frequency (MHz)
OIP3 (dBm)
2260 2270 2280 2290 2300 2310 2320
21
22
23
24
25
26
27
TA= -40°C
TA= 25°C
TA= 85°C
G051
Frequency (MHz)
OIP3 (dBm)
2770 2780 2790 2800 2810 2820 2830 2840 2850
23
24
25
26
27
28
29
30
TA= -40°C
TA= 25°C
TA= 85°C
G052
TRF372017
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www.ti.com
Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 51. OIP3 vs Frequency and Temperature at 1030 MHz Figure 52. OIP3 vs Frequency and Temperature at 1650 MHz
Figure 53. OIP3 vs Frequency and Temperature at 2300 MHz Figure 54. OIP3 vs Frequency and Temperature at 2850 MHz
Figure 56. OIP3 vs Baseband Voltage Amplitude and
Figure 55. OIP3 vs Common-Mode Voltage and Frequency Frequency
18 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
Frequency (MHz)
OIP2 (dBm)
2620 2630 2640 2650 2660 2670 2680 2690
46
47
48
49
50
51
52
53
54
TA= -40°C
TA= 25°C
TA= 85°C
G059
Frequency (MHz)
OIP2 (dBm)
300 800 1300 1800 2300 2800 3300 3800 4300 4800
30
35
40
45
50
55
60
65
70
TA= -40°C
TA= 25°C
TA= 85°C
G054
TRF372017
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Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 57. OIP2 vs Frequency and Temperature Figure 58. OIP2 vs Frequency and Temperature at 750 MHz
Figure 59. OIP2 vs Frequency and Temperature at 900 MHz Figure 60. OIP2 vs Frequency and Temperature at 1500 MHz
Figure 61. OIP2 vs Frequency and Temperature at 2150 MHz Figure 62. OIP2 vs Frequency and Temperature at 2650 MHz
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 19
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
2250 2260 2270 2280 2290 2300 2310 2320 2330
30
31
32
33
34
35
36
37
TA= -40°C
TA= 25°C
TA= 85°C
G064
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
2760 2770 2780 2790 2800 2810 2820 2830 2840 2850
39
40
41
42
43
44
TA= -40°C
TA= 25°C
TA= 85°C
G065
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
300 800 1300 1800 2300 2800 3300 3800 4300 4800
25
30
35
40
45
50
55
TA= -40°C
TA= 25°C
TA= 85°C
G060
Frequency (MHz)
Unadjusted Sideband Suppression (dBc)
880 885 890 895 900 905 910 915 920
45
45.5
46
46.5
TA= -40°C
TA= 25°C
TA= 85°C
G061
TRF372017
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www.ti.com
Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 63. Unadjusted Sideband Suppression Figure 64. Unadjusted Sideband Suppression
vs Frequency and Temperature vs Frequency and Temperature at 900 MHz
Figure 65. Unadjusted Sideband Suppression Figure 66. Unadjusted Sideband Suppression
vs Frequency and Temperature at 1030 MHz vs Frequency and Temperature at 1650 MHz
Figure 67. Unadjusted Sideband Suppression Figure 68. Unadjusted Sideband Suppression
vs Frequency and Temperature at 2300 MHz vs Frequency and Temperature at 2850 MHz
20 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
%
Frequency (MHz)
Unadjusted Carrier suppression (dBm)
1610 1620 1630 1640 1650 1660 1670
-47
-46.5
-46
-45.5
-45
-44.5
-44
-43.5
-43
TA= -40°C
TA= 25°C
TA= 85°C
G070
Frequency (MHz)
Unadjusted Carrier Suppression (dBm)
2250 2260 2270 2280 2290 2300 2310 2320 2330
-45
-44
-43
-42
-41
-40
-39
-38
-37
-36
-35
TA= -40°C
TA= 25°C TA= 85°C
G071
Frequency (MHz)
Unadjusted Carrier Suppression (dBm)
880 885 890 895 900 905 910 915 920
-46
-45.5
-45
-44.5
-44
-43.5
-43
-42.5
-42
-41.5
-41
TA= -40°C
TA= 25°C
TA= 85°C
G068
Frequency (MHz)
Unadjusted Carrier Suppression (dBm)
990 1000 1010 1020 1030 1040 1050
-46
-45.5
-45
-44.5
-44
-43.5
-43
-42.5
-42
TA= -40°C
TA= 25°C
TA= 85°C
G069
Frequency (MHz)
Unadjusted Carrier Suppression (dBm)
300 800 1300 1800 2300 2800 3300 3800 4300 4800
-51
-48
-45
-42
-39
-36
-33
-30
-27
-24
-21
TA= -40°C
TA= 25°C
TA= 85°C
G067
Common-Mode Voltage (V)
Unadjusted Sideband Suppression (dBc)
1.55 1.9
34
36
38
40
42
44
46
48
50
1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9
f = 750 MHz
f = 900 MHz
f = 1500 MHz
f = 2150 MHz
f = 2700 MHz
TA= 25°C
G066
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SLWS224E –AUGUST 2010–REVISED JANUARY 2016
Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 69. Unadjusted Sideband Suppression Figure 70. Unadjusted Carrier Suppression
vs Common-Mode Voltage and Frequency vs Frequency and Temperature
Figure 71. Unadjusted Carrier Suppression Figure 72. Unadjusted Carrier Suppression
vs Frequency and Temperature at 900 MHz vs Frequency and Temperature at 1030 MHz
Figure 73. Unadjusted Carrier Suppression Figure 74. Unadjusted Carrier Suppression
vs Frequency and Temperature at 1650 MHz vs Frequency and Temperature at 2300 MHz
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 21
VREF_SEL Setting
Common-Mode Voltage (V)
0 1 2 3 4 5 6 7
1.4
1.5
1.6
1.7
1.8
1.9
2
TA= -40°C
TA= 25°C
TA= 85°C
G074
IOFF Setting
BBIP Baseband Voltage Offset (mV)
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0 30 60 90 120 150 180 210 240
DCOFFSET_I = 3
DCOFFSET_I = 1
G075
TA= -40°C
TA= 25°C
TA= 85°C
Frequency (MHz)
Unadjusted Carrier Suppression (dBm)
2760 2770 2780 2790 2800 2810 2820 2830 2840 2850
-52
-50
-48
-46
-44
-42
-40
-38
-36
-34
TA= -40°C
TA= 25°C
TA= 85°C
G072
Common-Mode Voltage (V)
Unadjusted Carrier Suppression (dBm)
1.5 2
-49
-48
-47
-46
-45
-44
-43
-42
-41
-40
-39
1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95
f = 750 MHz
f = 900 MHz
f = 1500 MHz
f = 2150 MHz
f = 2700 MHz
TA= 25°C
G073
TRF372017
SLWS224E –AUGUST 2010–REVISED JANUARY 2016
www.ti.com
Typical Characteristics (continued)
VCM = 1.7 V (internal), VinBB = 300 mVrms single-ended sine wave in quadrature, VCC3V = 3.3 V, VCC5V = 5 V, fBB = 4.5 MHz
and 5.5 MHz, internal LO, TA= 25°C; FPFD = 1.6 MHz (unless otherwise noted).
Figure 76. Unadjusted Carrier Suppression
Figure 75. Unadjusted Carrier Suppression vs Common-Mode Voltage and Frequency
vs Frequency and Temperature at 2850 MHz
Figure 77. Common-Mode Voltage Figure 78. Baseband Voltage Offset
vs VREF_SEL Setting and Temperature vs IOFF Setting and Temperature
22 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
R Div
PFD
Prescaler
div p/p+1
Lock
det
Serial
Interface
CLK
DATA
LE
REFIN
CP_OUT
VTUNE
LO_OUT
VCCs
GNDs
Div1/2/4/
8
Pwr
save
PS
From
SPI
S
BBI
BBQ
RFOUT
Div2/
4/8
Poly-
Phase
SD
control
From
SPI
Vcm
D/A
From
SPI
Vcm
D/A
From
SPI
Charge
Pump
EXT_VCO
RF
Divider
N- Divider
From
SPI
LD
TRF372017
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SLWS224E –AUGUST 2010–REVISED JANUARY 2016
7 Detailed Description
7.1 Overview
The TRF372017 is a high-performance, direct up-conversion device, integrating a high-linearity, low-noise IQ
modulator and an integer-fractional PLL/VCO. The VCO uses integrated frequency dividers to achieve a wide,
continuous tuning range of 300 MHz to 4800 MHz. The LO is available as an output with independent frequency
dividers. The device also accepts input from an external LO or VCO. The modulator baseband inputs can be
biased either internally or externally. Internal DC offset adjustment enables carrier cancellation. The device is
controlled through a 3-wire serial programming interface (SPI). A control pin invokes power-save mode to reduce
power consumption while keeping the VCO locked for fast start-up.
7.2 Functional Block Diagram
7.3 Feature Description
7.3.1 Integer and Fractional Mode Selection
The PLL is designed to operate in either Integer mode or Fractional mode. If the desired local oscillator (LO)
frequency is an integer multiple of the phase frequency detector (PFD) frequency, fPFD, then Integer mode can be
selected. The normalized in-band phase noise floor in Integer mode is lower than in Fractional mode. In Integer
mode, the feedback divider is an exact integer, and the fraction is zero. While operating in Integer mode, the
register bits corresponding to the fractional control are don’t care.
In Fractional mode, the feedback divider fractional portion is non-zero on average. With 25-bit fractional
resolution, RF stepsize fPFD/225 is less than 1 Hz with a fPFD up to 33 MHz. The appropriate fractional control bits
in the serial register must be programmed.
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 23
l TEXAS INSTRUMENTS XXX) ffii )[ fpm stRF s vao = LO_D|V_SEL x fa: NFRAC J
f f
VCO RF
= LO_DIV_SEL ´
LO_DIV_SEL =
1 2400 MHz f 4800 MHz£RF £
£ £
£ £
£ £
2 1200 MHz f 2400 MHz
3 600 MHz f 1200 MHz
4 300 MHz f 600 MHz
RF
RF
RF
f
f
VCO
PFD
= NINT PLL_DIV_SEL´
f =
VCO (PLL_DIV_SEL) NINT +
f
RDIV
REF NFRAC
225
Divide
byR PHASE
FREQUENCY
DETECTOR +
CHARGEPUMP
LOOP
FILTER
Z(f)
Divide
byN.f
fREF
fVCO
fPFD
REFIN
CP_OUT VTUNE
VCO0
VCO1
VCO2
VCO3
Divideby
1/2/4/8
Divideby
1/2/4/8
fLO
LOP,LON
fmixer
fPM
Prescaler
4/5 or 8/9
Divide
by 1/2/4
RFDiv
NINT & NFRACDiv
fN
DigDiv
fComp
EXT_VCO
TRF372017
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Feature Description (continued)
7.3.2 Description of PLL Structure
Figure 79. Block Diagram of the PLL Loop
The output frequency is given by Equation 1:
(1)
The rate at which phase comparison occurs is fREF/RDIV. In Integer mode, the fractional setting is ignored and
Equation 2 is applied.
(2)
The feedback divider block consists of a programmable RF divider, a prescaler divider, and an NF divider. The
prescaler can be programmed as either a 4/5 or an 8/9 prescaler. The NF divider includes an Acounter and an
Mcounter.
7.3.2.1 Selecting PLL Divider Values
Operation of the PLL requires the LO_DIV_SEL, RDIV, PLL_DIV_SEL, NINT, and NFRAC bits to be calculated.
The LO or mixer frequency is related to fVCO according to divide-by-1/-2/-4/-8 blocks and the operating range of
fVCO.
a. LO_DIV_SEL
Therefore:
24 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
l TEXAS INSTRUMENTS P f P LL_D |V_S EL R 7 fpm N )
NINT 75inFractionalModeorNINT 72inIntegermode³³
23 NINT<75inFractionalmodeor20 NINT<72inIntegermode££
8
9
4
5
PRSC_SEL =
f
f
VCO
REF
RDIV
PLL_DIV_SEL
NFRAC = floor
(
(
(
(
-NINT 225
f
f
VCO
REF
RDIV
PLL_DIV_SEL
NINT = floor
(
(
f
f
REF
PFD
RDIV =
fPFD ==
f
_DIV_SEL
VCO, Stepsize
PLL
f LO_DIV_SEL
_DIV_SEL
RF, Stepsize
PLL
´
PLL_DIV_SEL = Ceiling LO_DIV_SEL f
3000 MHz
RF
´
(
(
TRF372017
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Feature Description (continued)
b. PLL_DIV_SEL
Given fVCO, select the minimum value for PLL_DIV_SEL so that the programmable RF divider limits the input
frequency into the prescaler block, fPM, to a maximum of 3000 MHz.
PLL _ DIV _ SEL = min(1, 2, 4) such that fPM ≤3000 MHz
This calculation can be restated as Equation 3.
(3)
Higher values of fPFD correspond to better phase noise performance in Integer mode or Fractional mode.
fPFD, along with PLL_DIV_SEL, determines the fVCO stepsize in Integer mode. Therefore, in Integer mode,
select the maximum fPFD that allows for the required RF stepsize, as shown by Equation 4.
(4)
In Fractional mode, a small RF stepsize is accomplished through the Fractional mode divider. A large fPFD
should be used to minimize the effects of fractional controller noise in the output spectrum. In this case, fPFD
may vary according to the reference clock and fractional spur requirements (for example, fPFD = 20 MHz).
c. RDIV, NINT, NFRAC, PRSC_SEL
The P/(P+1) programmable prescaler is set to 8/9 or 4/5 through the PRSC_SEL bit. To allow proper
fractional control, set PRSC_SEL according to Equation 5.
(5)
The PRSC_SEL limit at NINT < 75 applies to Fractional mode with third-order modulation. In Integer mode,
the PRSC_SEL = 8/9 should be used with NINT as low as 72. The divider block accounts for either value of
PRSC_SEL without requiring NINT or NFRAC to be adjusted. Then, calculate the maximum frequency to be
input to the digital divider at fN. Use the lower of the possible prescaler divide settings, P = (4,8), as shown
by Equation 6.
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 25
l TEXAS INSTRUMENTS r PLL_D|V_SEL x P
f =
N,Max
f
PLL_DIV_SEL P
VCO
´
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Feature Description (continued)
(6)
Verify that the frequency into the digital divider, fN, is less than or equal to 375 MHz. If fNexceeds 375 MHz,
choose a larger value for PLL_DIV_SEL and recalculate fPFD, RDIV, NINT, NFRAC, and PRSC_SEL.
7.3.2.2 Setup Example for Integer Mode
Suppose the following operating characteristics are desired for Integer mode operation:
• fREF = 40 MHz (reference input frequency)
• Step at RF = 2 MHz (RF channel spacing)
• fRF = 1600 MHz (RF frequency)
The VCO range is 2400 MHz to 4800 MHz. Therefore:
• LO_DIV_SEL = 2
• fVCO = LO_DIV_SEL × 1600 MHz = 3200 MHz
To keep the frequency of the prescaler less than 3000 MHz:
• PLL_DIV_SEL = 2
The desired stepsize at RF is 2 MHz, so:
• fPFD = 2 MHz
• fVCO, stepsize = PLL_DIV_SEL × fPFD = 4 MHz
Using the reference frequency along with the required fPFD gives:
• RDIV = 20
• NINT = 800
NINT ≥75; therefore, select the 8/9 prescaler.
fN,Max = 3200 MHz/(2 × 8) = 200 MHz < 375 MHz
This example shows that Integer mode operation gives sufficient resolution for the required stepsize.
7.3.2.3 Setup Example for Fractional Mode
Suppose the following operating characteristics are desired for Fractional mode operation:
• fREF = 40 MHz (reference input frequency)
• Step at RF = 5 MHz (RF channel spacing)
• fRF = 1,600,000,045 Hz (RF frequency)
The VCO range is 2400 MHz to 4800 MHz. Therefore:
• LO_DIV_SEL = 2
• fVCO = LO_DIV_SEL × 1,600,000,045 Hz = 3,200,000,090 Hz
To keep the frequency of the prescaler less than 3000 MHz:
• PLL_DIV_SEL = 2
Using a typical fPFD of 20 MHz:
• RDIV = 2
• NINT = 80
• NFRAC = 75
NINT ≥75; therefore, select the 8/9 prescaler.
fN,Max = 3200 MHz/(2 × 8) = 200 MHz < 375 MHz
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Feature Description (continued)
The actual frequency at RF is:
• fRF = 1600000044.9419 Hz
Which yields a frequency error of –0.058 Hz.
7.3.3 Fractional Mode Setup
Optimal operation of the PLL in fractional mode requires several additional register settings. Recommended
values are listed in Table 1. Optimal performance may require tuning the MOD_ORD, ISOURCE_SINK, and
ISOURCE_TRIM values according to the chosen frequency band.
Table 1. Fractional Mode Register Settings
REGISTER BIT REGISTER ADDRESSING RECOMMENDED VALUE
EN_ISOURCE Reg4B18 1
EN_DITH Reg4B25 1
MOD_ORD Reg4B[27..26] B[27..26] = [10]
DITH_SEL Reg4B28 0
DEL_SD_CLK Reg4B[30..29] B[30..29] = [10]
EN_LD_ISOURCE Reg5B31 0
ISOURCE_SINK Reg7B19 0
ISOURCE_TRIM Reg7B[22..20] B[22..20] = [100]
7.3.4 Selecting the VCO and VCO Frequency Control
To achieve a broad frequency tuning range, the TRF372017 includes four VCOs. Each VCO is connected to a
bank of capacitors that determine its valid operating frequency. For any given frequency setting, the appropriate
VCO and capacitor array must be selected.
The device contains logic that automatically selects the appropriate VCO and capacitor bank. Set bit EN_CAL to
initiate the calibration algorithm. During the calibration process, the device selects a VCO and a capacitor state
so that VTune matches the reference voltage set by VCO_CAL_REF_n. Accuracy of the tune is increased
through bits CAL_ACC_n. Because a calibration begins immediately when EN_CAL is set, all registers must
contain valid values before initiating calibration.
Calibration logic is driven by a CAL_CLK clock derived from the phase frequency detector frequency scaled
according to the setting in CAL_CLK_SEL. Faster CAL_CLK frequency enables faster calibration, but the logic is
limited to clock frequencies around 1 MHz. Table 2 provides suggested CAL_CLK_SEL scaling
recommendations for several phase frequency detector frequencies. The flag R_SAT_ERR is evaluated during
the calibration process to indicate calibration counter overflow errors, which occurs if CAL_CLK runs too fast. If
R_SAT_ERR is set during a calibration, the resulting calibration is not valid and CAL_CLK_SEL must be used to
slow the CAL_CLK. CAL_CLK frequencies should not be set to less than 0.1 MHz.
Table 2. Example CAL_CLK_SEL Scaling
PFD FREQUENCY CAL_CLK_SEL CAL_CLK FREQUENCY
(MHz) SCALING (MHz)
20 1/32 0.625
1 1 1
0.1 8 0.8
When VCOSEL_MODE is 0, the device automatically selects both the VCO and capacitor bank within 23
CAL_CLK cycles. When VCOSEL_MODE is 1, the device uses the VCO selected in VCO_SEL_0 and
VCO_SEL_1 and automatically selects the capacitor array within 17 CAL_CLK cycles. The VCO and capacitor
array settings resulting from calibration cannot be read from the VCO_SEL_n and VCO_TRIM_n bits in registers
2 and 7. They can only be read from register 0.
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l TEXAS INSTRUMENTS
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Automatic calibration can be disabled by setting CAL_BYPASS to 1. In this manual cal mode, the VCO is
selected through register bits VCO_SEL_n, while the capacitor array is selected through register bits
VCO_TRIM_n. Calibration modes are summarized in Table 3. After calibration is complete, the PLL is released
from calibration mode to reach an analog lock.
During the calibration process, the TRF372017 scans through many frequencies. RF and LO outputs should be
disabled until calibration is complete. At power up, the RF and LO output are disabled by default.
Once a calibration has been performed at a given frequency setting, the calibration is valid over all operating
temperature conditions.
Table 3. VCO Calibration Modes
MAX CYCLES
CAL_BYPASS VCOSEL_MODE VCO CAPACITOR ARRAY
CAL_CLK
0 0 46 Automatic
0 1 34 VCO_SEL_n automatic
1don't care na VCO_SEL_n VCO_TRIM_n
7.3.5 External VCO
An external LO or VCO signal may be applied. EN_EXTVCO powers the input buffer and selects the buffered
external signal instead of an internal VCO. Dividers, the pfd, and the charge pump remain enabled and may be
used to drive an external VCO. NEG_VCO must correspond to the gain of the external VCO.
7.3.6 VCO Test Mode
Setting VCO_TEST_MODE forces the currently selected VCO to the edge of its frequency range by
disconnecting the charge pump input from the pfd and loop filter and forcing its output high or low. The upper or
lower edge of the VCO range is selected through COUNT_MODE_MUX_SEL.
VCO_TEST_MODE also reports the value of a frequency counter in COUNT, which can be read back in register
0. COUNT reports the number of digital N divider cycles in the PLL, directly related to the period of fN, that occur
during each CAL_CLK cycle. Counter operation is initiated through the bit EN_CAL.
Table 4. VCO Test Mode
VCO_TEST_MODE COUNT_MODE_MUX_SEL VCO OPERATION REGISTER 0 B[30..13]
B[30..24] = undefined
B[23..22] = VCO_SEL selected during autocal
0don't care Normal B21 = undefined
B[20..13] = VCO_TRIM selected during autocal
1 0 Max frequency B[30..13] = Max frequency counter
1 1 Min frequency B[30..13] = Min frequency counter
7.3.7 Lock Detect
The lock detect signal is generated in the phase frequency detector by comparing the VCO target frequency
against the VCO actual frequency. When the phase of the two compared frequencies remains aligned for several
clock cycles, an internal signal goes high. The precision of this comparison is controlled through the
LD_ANA_PREC bits. This internal signal is then averaged and compared against a reference voltage to generate
the LD signal. The number of averages used is controlled through LD_DIG_PREC. Therefore, when the VCO is
frequency locked, LD is high. When the VCO frequency is not locked, LD may pulse high or exhibit periodic
behavior.
By default, the internal lock detect signal is driven on the LD terminal. Register bits MUX_CTRL_n can be used
to control a mux to output other diagnostic signals on the LD output. The LD control signals are shown in
Table 5.
28 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
l TEXAS INSTRUMENTS P/N
DIV1
PWD_TX_DIV
DIV8
DIV4
DIV2
Polyphase
Div2
Div4
Div8
VCOP/N
ImixP/N
QmixP/N
Speedup
Tx_DIV_I
bias
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Table 5. LD Control Signals
ADJUSTMENT REGISTER BITS BIT ADDRESSING
Lock detect precision LD_ANA_PREC_0 Register 4 Bit 19
Unlock detect precision LD_ANA_PREC_1 Register 4 Bit 20
LD averaging count LD_DIG_PREC Register 4 Bit 24
Diagnostic Output MUX_CTRL_n Register 7 Bits 18..16
Table 6. LD Control Signal Mode Settings
CONDITION RECOMMENDED SETTINGS
LD_ANA_PREC_0 = 0
Integer Mode LD_ANA_PREC_1 = 0
LD_DIG_PREC = 1
LD_ANA_PREC_0 = 1
Fractional Mode LD_ANA_PREC_1 = 1
LD_DIG_PREC = 1
7.3.8 Tx Divider
The Tx divider, illustrated in Figure 80, converts the differential output of the VCO into differential I and Q mixer
components. The divide by 1 differential quadrature phases are provided through a polyphase. Divide by 2, 4,
and 8 differential quadrature phases are provided through flip-flop dividers. Only one of the dividers operates at a
time, and the appropriate output is selected by a mux. DIVn bits are controlled through TX_DIV_SELn.
TX_DIV_I determines the bias level for the divider blocks. The SPEEDUP control is used to bypass a
stabilization resistor and reach the final bias level faster after a change in the divider selection. SPEEDUP should
be disabled during normal operation.
Figure 80. Tx Divider
7.3.9 LO Divider
The LO divider is shown in Figure 81. It frequency divides the VCO output. Only one of the dividers operates at a
time, and the appropriate output is selected by a mux. DIVn bits are controlled through LO_DIV_SELn. The
output is buffered and provided on output pins LO_OUT_P and LO_OUT_N. The output level is controlled
through BUFOUT_BIASn.
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 29
l TEXAS INSTRUMENTS %
ImixP
ImixN
QmixP
QmixN
BBI_P
BBI_N
BBQ_P
BBQ_N
Diff2Single RFOUT
Buffer
DIV1
PWD_LO_DIV
DIV8
DIV4
DIV2
Div2
Div4
Div8
VCOP/N
LO_OUT_P/N
Speedup
LO_DIV_I
bias
BUFOUT_BIASn
PWD_OUT_BUFF
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LO_DIV_I determines the bias level for the divider blocks. The SPEEDUP control is used to bypass a
stabilization resistor and reach the final bias level faster after a change in the divider selection. SPEEDUP should
be disabled during normal operation. Although SPEEDUP controls both the Tx and LO divider biases, the Tx and
LO divider biases are generated independently.
Figure 81. LO Divider
7.3.10 Mixer
A diagram of the mixer is shown in Figure 82. The mixer is followed by a differential to single-ended converter
and buffer for output.
Figure 82. Mixer
7.3.11 Disabling Outputs
RF frequency outputs are generated at the RFOUT and LO* terminals. Unused RF frequency outputs should be
disabled to minimize power consumption and noise generation. Table 7 lists settings used to disable the outputs.
Power-save mode can also be used to disable outputs.
30 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
l TEXAS INSTRUMENTS
PLL
VCC_DIG
VCC_LO1 (p7)
VCC_D2S (p20)
VCC_VCO2 (p32)
VCC_VCO1 (p35)
VCC_PLL
DIG VCO Tank
SPI &
EEPROM
VCC
TxDIV
VCC
LODIV
VCC_LO2 (p30)
VCC_VCO1 (p35)
VCC_LO2 (p30)
Divider Buffer Buffer
Bias
VCC_LO1 (p7)
BBVCMGen
IQ
Offset
Mod
Buffer Mixer
VCC_MIX (p21)
AN
VCC_PLL
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Table 7. Register Controls for Disabling Outputs
DISABLED OUTPUT REGISTER BIT SETTING
RFOUT PWD_TX_DIV 1
PWD_OUT_BUFF 1
LOP and LON PWD_LO_DIV 1
7.3.12 Power Supply Distribution
Power supply distribution for the TRF372017 is shown in Figure 83. Proper isolation and filtering of the supplies
is critical for low noise operation of the device. Each supply pin should be supplied with local decoupling
capacitance and isolated with a ferrite bead. VCC_VCO2 is tolerant of 5-V supply voltages to permit additional
supply filtering.
Figure 83. Power Supply Distribution
7.3.13 Carrier Feedthrough Cancellation
The structure of the baseband current DAC is shown in Figure 84. For each input pair, there is a programmable
reference current. The reference current for each pair (I and Q) is identical and is programmed through the same
register bits, but the reference current source itself is duplicated in the device for both I and Q inputs. This
current can be set to change the total current flowing into the P and N nodes, which in turn changes the offset
programmability range.
The reference current is then mirrored and multiplied before getting injected into the input node. The total
mirrored current is routed into the two sides of the differential pair and routed according to eight programmable
bits. As the 8-bit setting is changed, current is shifted from one side of the pair into the other side for each of the
I and Q input pairs. In practical usage, the offset current routing distributes the adjustment for each side of the
pair, while the reference current sets the range of adjustment. This effect can be seen in Figure 78, which shows
that the gain of the current routing is greater when the reference current setting is higher. However the step size
also increases with increase in range. Figure 78 shows the effect on common mode voltage of varying the DAC
reference current. Adjustment register bits are shown in Table 8.
Offset adjustment may be provided by an external source, such as a DAC QMC block, for DC-coupled systems.
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 31
l TEXAS INSTRUMENTS
Iref
-----
128
B8
Iref
-----
1
B0
Iref
-----
2
B1
...
DCOffsetIref
CurrentMirror
IP
I/QOffsetRefCurrent, 8 bit
Iref
-----
128
B0
Iref
-----
1
B8
Iref
-----
2
B7
...
IN
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Figure 84. Block Diagram of the Programmable Current DAC
Table 8. Baseband Differential Offset Adjustment Factors
ADJUSTMENT REGISTER BITS BIT ADDRESS
IOFF_n
I input differential offset programmability I Offset Ref Curr Register 6
Bits 12..5
QOFF
Q input differential offset programmability Q Offset Ref Curr Register 6
Bits 20..13
Register 7
Offset Programmability Range DCoffset_I_n Bits 30..29
7.3.14 Internal Baseband Bias Voltage Generation
The TRF372017 has the ability to generate DC voltage levels for its baseband inputs internally. Register settings
in the device allow the user to adjust common mode voltage of the I and Q signals separately. There are three
adjustment factors for the baseband inputs. These are described in Table 9.
Table 9. Baseband Adjustment Factors
ADJUSTMENT REGISTER BITS BIT ADDRESSING
VCM setting VREF_SEL_n Register 6 Bits 23..21
VCM Enable PWD_BB_VCM Register 4 Bit 15
Bias select IB_VCM_SEL Register 7 Bit 25
32 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
l TEXAS INSTRUMENTS 4‘ F
VrefSet
5000 5000
100 (external)
IDAC IDAC
external external
IP IN
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Each baseband input pair includes the circuitry depicted in Figure 85. The Vref set voltage impacts all four
terminals: IP, IN, QP, and QN. The effect of changing the reference voltage is shown in Figure 77. Each node
also includes a programmable current DAC that injects current into the positive and negative terminals of each
input.
Figure 85. Block Diagram of the Baseband I Input Nodes
Table 10. Frequency Range Operation
VCO FREQUENCY DIV BY 2 DIV BY 4 DIV BY 8
Fmin Fmax Fmin Fmax Fmin Fmax Fmin Fmax
2400 4800 1200 2400 600 1200 300 600
7.4 Device Functional Modes
7.4.1 Powersave Mode
Powersave mode can be used to put the device into a low power consumption mode. The PLL block remains
active in Powersave mode, reducing the time required for start-up. However, the modulator, dividers, output
buffers, and baseband common mode generation blocks are powered down. The SPI block remains active, and
registers are addressable. Use the PS pin to activate powersave mode.
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7.5 Register Maps
7.5.1 Serial Interface Programming Registers Definition
The TRF372017 features a 3-wire serial programming interface (SPI) that controls an internal 32-bit shift register.
There are a total of 3 signals that must be applied: the clock (CLK, pin 47), the serial data (DATA, pin 46) and
the latch enable (LE, pin 45). The TRF372017 has an additional pin (RDBK, pin 2) for read-back functionality.
This pin is a digital pin and can be used to read-back values of different internal registers.
The DATA (DB0-DB31) is loaded LSB first and is read on the rising edge of the CLOCK. The LE is
asynchronous to the CLOCK and at its rising edge the data in the shift register gets loaded onto the selected
internal register. The 5 LSB of the Data field are the address bits to select the available internal registers.
7.5.1.1 PLL SPI Registers
7.5.1.1.1 Register 1
Table 11. Register 1
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7 Bit8 Bit9 Bit10 Bit11 Bit12 Bit13 Bit14 Bit15
Register address Reference Clock Divider
Bit16 Bit17 Bit18 Bit19 Bit20 Bit21 Bit22 Bit23 Bit24 Bit25 Bit26 Bit27 Bit28 Bit29 Bit30 Bit31
…. RSV REF VCO Charge Pump Current CP VCO Cal CLK div/Mult RSV
INV NEG DOUBLE
Table 12. Register 1 Field Descriptions
REGISTER 1 NAME RESET VALUE DESCRIPTION
Bit0 ADDR_0 1 Register address bits
Bit1 ADDR_1 0
Bit2 ADDR_2 0
Bit3 ADDR_3 1
Bit4 ADDR_4 0
Bit5 RDIV_0 1
Bit6 RDIV_1 0
Bit7 RDIV_2 0
Bit8 RDIV_3 0
Bit9 RDIV_4 0
Bit10 RDIV_5 0
13-bit Reference Divider value
Bit11 RDIV_6 0 (minimum value Rmin= 1, B[17..5] = [00 0000 0000 001];
Bit12 RDIV_7 0 maximum value Rmax=8191, B[17..5] = [11 1111 1111 111];
Bit13 RDIV_8 0
Bit14 RDIV_9 0
Bit15 RDIV_10 0
Bit16 RDIV_11 0
Bit17 RDIV_12 0
Bit18 RSV 0
Bit19 REF_INV 0 Invert Reference Clock polarity; 1 = use falling edge
Bit20 NEG_VCO 1 VCO polarity control; 1= negative slope (negative Kv)
Bit21 ICP_0 0
Bit22 ICP_1 1 Program Charge Pump DC current, ICP
1.94mA, B[25..21] = [00 000]
Bit23 ICP_2 0 0.47mA, B[25..21] = [11 111]
0.97mA, default value, , B[25..21] = [01 010]
Bit24 ICP_3 1
Bit25 ICP_4 0
Bit26 ICPDOUBLE 0 1 = set ICP to double the current
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Table 12. Register 1 Field Descriptions (continued)
REGISTER 1 NAME RESET VALUE DESCRIPTION
Bit27 CAL_CLK_SEL_0 0
Bit28 CAL_CLK _SEL_1 0 Multiplication or division factor to create VCO calibration clock from PFD frequency
Bit29 CAL_CLK _SEL_2 0
Bit30 CAL_CLK _SEL_3 1
Bit31 RSV 0
CAL_CLK_SEL[3..0]: Set the frequency divider value used to derive the VCO calibration clock from the phase
detector frequency.
Table 13. Scaling Factors
CAL_CLK_SEL SCALING FACTOR
1111 1/128
1110 1/64
1101 1/32
1100 1/16
1011 1/8
1010 1/4
1001 ½
1000 1
0110 2
0101 4
0100 8
0011 16
0010 32
0001 64
0000 128
ICP[4..0]: Set the charge pump current.
Table 14. ICP and Current
ICP[4..0] CURRENT (mA)
00 000 1.94
00 001 1.76
00 010 1.62
00 011 1.49
00 100 1.38
00 101 1.29
00 110 1.21
00 111 1.14
01 000 1.08
01 001 1.02
01 010 0.97
01 011 0.92
01 100 0.88
01 101 0.84
01 110 0.81
01 111 0.78
10 000 0.75
10 001 0.72
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Table 14. ICP and Current (continued)
ICP[4..0] CURRENT (mA)
10 010 0.69
10 011 0.67
10 100 0.65
10 101 0.63
10 110 0.61
10 111 0.59
11 000 0.57
11 001 0.55
11 010 0.54
11 011 0.52
11 100 0.51
11 101 0.5
11 110 0.48
11 111 0.47
7.5.1.1.2 Register 2
Table 15. Register 2
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7 Bit8 Bit9 Bit10 Bit11 Bit12 Bit13 Bit14 Bit15
Register address N-Divider Value
Bit16 Bit17 Bit18 Bit19 Bit20 Bit21 Bit22 Bit23 Bit24 Bit25 Bit26 Bit27 Bit28 Bit29 Bit30 Bit31
... PLL divider Prescaler RSV RSV VCO select FCO Cal accuracy CAL
setting Select sel
mode
Table 16. Register 2 Field Descriptions
REGISTER 2 NAME RESET VALUE DESCRIPTION
Bit0 ADDR_0 0
Bit1 ADDR_1 1
Bit2 ADDR_2 0 Register address bits
Bit3 ADDR_3 1
Bit4 ADDR_4 0
Bit5 NINT_0 0
Bit6 NINT_1 0
Bit7 NINT_2 0
Bit8 NINT_3 0
Bit9 NINT_4 0
Bit10 NINT_5 0
Bit11 NINT_6 0
Bit12 NINT_7 1 PLL N-divider division setting
Bit13 NINT_8 0
Bit14 NINT_9 0
Bit15 NINT_10 0
Bit16 NINT_11 0
Bit17 NINT_12 0
Bit18 NINT_13 0
Bit19 NINT_14 0
Bit20 NINT_15 0
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Table 16. Register 2 Field Descriptions (continued)
REGISTER 2 NAME RESET VALUE DESCRIPTION
Bit21 PLL_DIV_SEL0 1 Select division ratio of divider in front of prescaler
Bit22 PLL_DIV_SEL1 0
Bit23 PRSC_SEL 1 Set prescaler modulus (0 →4/5; 1 →8/9)
Bit24 RSV 0
Bit25 RSV 0
Selects between the four integrated VCOs
Bit26 VCO_SEL_0 0 00 = lowest frequency VCO; 11 = highest frequency VCO
Bit27 VCO_SEL_1 1
Bit28 VCOSEL_MODE 0 Single VCO auto-calibration mode (1 = active)
Bit29 CAL_ACC_0 0 Error count during the cap array calibration
Recommended programming [00]
Bit30 CAL_ACC_1 0
Execute a VCO frequency auto-calibration. Set to 1 to initiate a calibration. Resets
Bit31 EN_CAL 0 automatically.
PLL_DIV<1,0>: Select division ratio of divider in front of prescaler.
Table 17. Frequency Divider
PLL DIV FREQUENCY DIVIDER
00 1
01 2
10 4
VCOSEL_MODE<0>: When it is 1, the cap array calibration is run on the VCO selected through bits
VCO_SEL<2,1>.
7.5.1.1.3 Register 3
Table 18. Register 3
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7 Bit8 Bit9 Bit10 Bit11 Bit12 Bit13 Bit14 Bit15
Register address Fractional N-Divider Value
Bit16 Bit17 Bit18 Bit19 Bit20 Bit21 Bit22 Bit23 Bit24 Bit25 Bit26 Bit27 Bit28 Bit29 Bit30 Bit31
... RSV RSV
Table 19. Register 3 Field Descriptions
REGISTER 3 NAME RESET VALUE DESCRIPTION
Bit0 ADDR_0 1
Bit1 ADDR_1 1
Bit2 ADDR_2 0 Register address bits
Bit3 ADDR_3 1
Bit4 ADDR_4 0
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Table 19. Register 3 Field Descriptions (continued)
REGISTER 3 NAME RESET VALUE DESCRIPTION
Bit5 NFRAC<0> 0
Bit6 NFRAC<1> 0
Bit7 NFRAC<2> 0
Bit8 NFRAC<3> 0
Bit9 NFRAC<4> 0
Bit10 NFRAC<5> 0
Bit11 NFRAC<6> 0
Bit12 NFRAC<7> 0
Bit13 NFRAC<8> 0
Bit14 NFRAC<9> 0
Bit15 NFRAC<10> 0
Bit16 NFRAC<11> 0
Bit17 NFRAC<12> 0 Fractional PLL N divider value 0 to 0.99999.
Bit18 NFRAC<13> 0
Bit19 NFRAC<14> 0
Bit20 NFRAC<15> 0
Bit21 NFRAC<16> 0
Bit22 NFRAC<17> 0
Bit23 NFRAC<18> 0
Bit24 NFRAC<19> 0
Bit25 NFRAC<20> 0
Bit26 NFRAC<21> 0
Bit27 NFRAC<22> 0
Bit28 NFRAC<23> 0
Bit29 NFRAC<24> 0
Bit30 RSV 0
Bit31 RSV 0
7.5.1.1.4 Register 4
Table 20. Register 4
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7 Bit8 Bit9 Bit10 Bit11 Bit12 Bit13 Bit14 Bit15
Register address PD Power-Down PLL blocks PD
PLL VCM
Bit16 Bit17 Bit18 Bit19 Bit20 Bit21 Bit22 Bit23 Bit24 Bit25 Bit26 Bit27 Bit28 Bit29 Bit30 Bit31
PD DC EXT PLL Test Control ΣΔ Mode order ΣΔ Mode controls EN
off VCO Fract
mode
Table 21. Register 4 Field Descriptions
REGISTER 4 NAME RESET VALUE DESCRIPTION
Bit0 ADDR_0 0 Register address bits
Bit1 ADDR_1 0
Bit2 ADDR_2 1
Bit3 ADDR_3 1
Bit4 ADDR_4 0
Bit5 PWD_PLL 0 Power-down all PLL blocks (1 = off)
Bit6 PWD_CP 0 When 1, charge pump is off
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Table 21. Register 4 Field Descriptions (continued)
REGISTER 4 NAME RESET VALUE DESCRIPTION
Bit7 PWD_VCO 0 When 1, VCO is off
Bit8 PWD_VCOMUX 0 Power-down the 4 VCO mux block (1 = Off)
Bit9 PWD_DIV124 0 Power-down programmable RF divider in PLL feedback path (1 = off)
Bit10 PWD_PRESC 0 Power-down programmable prescaler (1 = off)
Bit11 RSV 0
Bit12 PWD_OUT_BUFF 1 Power-down LO output buffer (1 = off).
Bit13 PWD_LO_DIV 1 Power-down frequency divider in LO output chain 1 (1 = off)
Bit14 PWD_TX_DIV 1 Power-down frequency divider in modulator chain (1 = off)
Bit15 PWD_BB_VCM 1 Power-down baseband input DC common block (1 = off)
Bit16 PWD_DC_OFF 1 Power-down baseband input DC offset control block (1 = off)
Bit17 EN_EXTVCO 0 Enable external LO/VCO input buffer (1 = enabled)
Enable offset current at Charge Pump output (to be used in fractional mode only, 1
Bit18 EN_ISOURCE 0 = on).
Bit19 LD_ANA_PREC_0 0 Control precision of analog lock detector (1 1 = low; 0 0 = high). See Lock Detect
section of Application Information for usage details.
Bit20 LD_ANA_PREC_1 0
Bit21 CP_TRISTATE_0 0 Set the charge pump output in Tristate mode.
Normal, B[22..21] = [00]
Down, B[22..21] = [01]
Bit22 CP_TRISTATE_1 0 Up, B[22..21] = [10]
Tristate, B[22..21] = [11]
Bit23 SPEEDUP 0 Speed up PLL and Tx blocks by bypassing bias stabilizer capacitors.
Bit24 LD_DIG_PREC 0 Lock detector precision (increases sampling time if set to 1)
Bit25 EN_DITH 1 Enable ΔΣ modulator dither (1=on)
Bit26 MOD_ORD_0 0 ΔΣ modulator order (1 through 4). Not used in integer mode.
1st order, B[27..26] = [00]
2nd order, B[27..26] = [01]
Bit27 MOD_ORD_1 1 3rd order, B[27..26] = [10]
4th order, B[27..26] = [11]
Bit28 DITH_SEL 0 Select dither mode for ΔΣ modulator (0 = const; 1 = pseudo-random)
Bit29 DEL_SD_CLK_0 0 ΔΣ modulator clock delay. Not used in integer mode.
Min delay = 00
Bit30 DEL_SD_CLK_1 1 Max delay = 11
Bit31 EN_FRAC 0 Enable fractional mode (1 = fractional enabled)
7.5.1.1.5 Register 5
Table 22. Register 5
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7 Bit8 Bit9 Bit10 Bit11 Bit12 Bit13 Bit14 Bit15
Register address VCO_R Trim PLL_R_Trim VCO Current VCOBUF BIAS
Bit16 Bit17 Bit18 Bit19 Bit20 Bit21 Bit22 Bit23 Bit24 Bit25 Bit26 Bit27 Bit28 Bit29 Bit30 Bit31
VCOMUX BIAS OUTBUF BIAS RSV BIAS VCO CAL REF VCOMUX VCO Bias RSV EN_LD
SEL AMPL Voltage ISRC
Table 23. Register 5 Field Descriptions
REGISTER 5 NAME RESET VALUE DESCRIPTION
Bit0 ADDR_0 1
Bit1 ADDR_1 0
Bit2 ADDR_2 1 Register address bits
Bit3 ADDR_3 1
Bit4 ADDR_4 0
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Table 23. Register 5 Field Descriptions (continued)
REGISTER 5 NAME RESET VALUE DESCRIPTION
Bit5 VCOBIAS_RTRIM_0 0
Bit6 VCOBIAS_RTRIM_1 0 VCO bias resistor trimming. Recommended programming [100].
Bit7 VCOBIAS_RTRIM_2 1
Bit8 PLLBIAS_RTRIM_0 0 PLL bias resistor trimming. Recommended programming [10].
Bit9 PLLBIAS_RTRIM_1 1
Bit10 VCO_BIAS_0 0 VCO bias reference current.
300 µA, B[13..10] = [00 00]
Bit11 VCO_BIAS_1 0 600 µA, B[13..10] = [11 11]
Bit12 VCO_BIAS_2 0 Bias current varies directly with reference current
Recommended programming
400 µA, B[13..10] = [0101] with VCC_VCO2 = 3.3 V
Bit13 VCO_BIAS_3 1 600 µA, B[13..10] = [1111] with VCC_VCO2 = 5 V
Bit14 VCOBUF_BIAS_0 0 VCO buffer bias reference current.
300 µA, B[15..14] = [00]
600 µA, B[15..14] = [11]
Bit15 VCOBUF_BIAS_1 1 Bias current varies directly with reference current
Recommended programming [10]
Bit16 VCOMUX_BIAS_0 0 VCO’s muxing buffer bias reference current.
300 µA, B[17..16] = [00]
600 µA, B[17..16] = [11]
Bit17 VCOMUX_BIAS_1 1 Bias current varies directly with reference current
Recommended programming [11]
Bit18 BUFOUT_BIAS_0 0 PLL output buffer bias reference current.
300 µA, B[19..18] = [00]
600 µA, B[19..18] = [11]
Bit19 BUFOUT_BIAS_1 1 Bias current varies directly with reference current
Bit20 RSV 0
Bit21 RSV 1
Select bias current type for VCO calibration circuitry
Bit22 VCO_CAL_IB 0 0 = PTAT; 1 = constant over temperature
Recommended programming [0]
Bit23 VCO_CAL_REF_0 0 VCO calibration reference voltage trimming.
0.9 V, B[25..23] = [000]
Bit24 VCO_CAL_REF_1 0 1.4 V, B[25..23] = [111]
Bit25 VCO_CAL_REF_2 1 Recommended programming [010]
Bit26 VCO_AMPL_CTRL_0 0 Adjust the signal amplitude at the VCO mux input
Recommended programming [11]
Bit27 VCO_AMPL_CTRL_1 1
Bit28 VCO_VB_CTRL_0 0 VCO core bias voltage control
1.2 V, B[29..28] = [00]
1.35 V, B[29..28] = [01]
1.5 V, B[29..28] = [10]
Bit29 VCO_VB_CTRL _1 1 1.65 V, B[29..28] = [11]
Recommended programming [00]
Bit30 RSV 0
Enable monitoring of LD to turn on Isource when in frac-n mode (EN_FRAC=1).
0 = ISource set by EN_ISOURCE.
Bit31 EN_LD_ISOURCE 1 1 = ISource set by LD.
Recommended programming [0]
7.5.1.1.6 Register 6
Table 24. Register 6
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7 Bit8 Bit9 Bit10 Bit11 Bit12 Bit13 Bit14 Bit15
Register address BB DC OFFSET
Bit16 Bit17 Bit18 Bit19 Bit20 Bit21 Bit22 Bit23 Bit24 Bit25 Bit26 Bit27 Bit28 Bit29 Bit30 Bit31
BB DC OFFSET VREF SEL TXDIV SEL LODIV SEL TXDIV BIAS LODIV BIAS
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Table 25. Register 6 Field Descriptions
RESET
REGISTER 6 NAME DESCRIPTION
VALUE
Bit0 ADDR_0 0
Bit1 ADDR_1 1
Bit2 ADDR_2 1 Register address bits
Bit3 ADDR_3 1
Bit4 ADDR_4 0
Bit5 IOFF_0 0
Bit6 IOFF_1 0
Bit7 IOFF_2 0 Adjust Iref current used for defining I DC offset.
Bit8 IOFF_3 0 Full range, 2 × Iref, B[12..5] = [1 1111 111]
Bit9 IOFF_4 0 Mid scale, Iref B[12..5] = [1 0000 000]
Bit10 IOFF_5 0
Bit11 IOFF_6 0
Bit12 IOFF_7 1
Bit13 QOFF_0 0
Bit14 QOFF_1 0
Bit15 QOFF_2 0 Adjust Iref current used for defining Q DC offset.
Bit16 QOFF_3 0 Full range, 2 × Iref, B[20..13] = [1 1111 111]
Bit17 QOFF_4 0 Mid scale, Iref B[20..13] = [1 0000 000]
Bit18 QOFF_5 0
Bit19 QOFF_6 0
Bit20 QOFF_7 1
Bit21 VREF_SEL_0 0 Adjust Vref in baseband common mode generation circuit.
0.65 V, B[23..21] = [000]
Bit22 VREF_SEL_1 0 1 V, B[23..21] = [111]
Modulator common mode is Vref + Vbe.
Bit23 VREF_SEL_2 1 Recommended programming [100]
Bit24 TX_DIV_SEL_0 0 Adjust Tx path divider.
Div1, [B25..24] = [00]
Div2, [B25..24] = [01]
Bit25 TX_DIV_SEL_1 0 Div4, [B25..24] = [10]
Div8, [B25..24] = [11]
Bit26 LO_DIV_SEL_0 0 Adjust LO path divider
Div1, [B28..27] = [00]
Div2, [B28..27] = [01]
Bit27 LO_DIV_SEL_1 0 Div4, [B28..27] = [10]
Div8, [B28..27] = [11]
Bit28 TX_DIV_BIAS_0 0 TX divider bias reference current
25 µA, [B29..28] = [00]
37.5 µA, [B29..28] = [01]
50 µA, [B29..28] = [10]
Bit29 TX_DIV_BIAS_1 1 62.5 µA, [B29..28] = [11]
Bias current varies directly with reference current
Bit30 LO_DIV_BIAS_0 0 LO divider bias reference current
25 µA, [B29..28] = [00]
37.5 µA, [B29..28] = [01]
50 µA, [B29..28] = [10]
Bit31 LO_DIV_BIAS_1 1 62.5 µA, [B29..28] = [11]
Bias current varies directly with reference current
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7.5.1.1.7 Register 7
Table 26. Register 7
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7 Bit8 Bit9 Bit10 Bit11 Bit12 Bit13 Bit14 Bit15
Register address VCO CAP ARRAY CONTROL RSV VCO CAL
test bypass
mode
Bit16 Bit17 Bit18 Bit19 Bit20 Bit21 Bit22 Bit23 Bit24 Bit25 Bit26 Bit27 Bit28 Bit29 Bit30 Bit31
MUX CONTROL ISRC OFFSET CURRENT LP PD VCM MIX LO VCM DC OFF REF VCO
SINK ADJUST TimeConst Bias BIAS
SEL
Table 27. Register 7 Field Descriptions
REGISTER 7 NAME RESET VALUE DESCRIPTION
Bit0 ADDR_0 1 Register address bits
Bit1 ADDR_1 1
Bit2 ADDR_2 1
Bit3 ADDR_3 1
Bit4 ADDR_4 0
Bit5 RSV 0
Bit6 RSV 0
Bit7 VCO_TRIM_0 0 VCO capacitor array control bits, used in manual cal mode
Bit8 VCO_TRIM_1 0
Bit9 VCO_TRIM_2 0
Bit10 VCO_TRIM_3 0
Bit11 VCO_TRIM_4 0
Bit12 VCO_TRIM_5 1
Bit13 RSV 0
Bit14 VCO_TEST_MODE 0 Counter mode: measure max/min frequency of each VCO
Bypass of VCO auto-calibration. When 1, VCO_TRIM and VCO_SEL bits are
Bit15 CAL_BYPASS 0 used to select the VCO and the cap array setting
Bit16 MUX_CTRL_0 1 Select signal for test output (pin 5, LD).
[000] = Ground
Bit17 MUX_CTRL_1 0 [001] = Lock detector
[010] = NDIV counter output
[011] = Ground
[100] = RDIV counter output
Bit18 MUX_CTRL_2 0 [101] = Ground
[110] = A_counter output
[111] = Logic high;
Bit19 ISOURCE_SINK 0 Charge pump offset current polarity.
Bit20 ISOURCE_TRIM_0 0
Bit21 ISOURCE_TRIM_1 0 Adjust isource bias current in frac-n mode.
Bit22 ISOURCE_TRIM_2 1
Bit23 PD_TC_0 0 Time constant control for PWD_OUT_BUFF
[00] = Minimum time constant
Bit24 PD_TC_1 0 [11] = Maximum time constant
Select constant/ptat current for Common mode bias generation block
Bit25 IB_VCM_SEL 0 0 = PTAT
1 = const
Bit26 RSV 0
Bit27 RSV 0
Bit28 RSV 1
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Table 27. Register 7 Field Descriptions (continued)
REGISTER 7 NAME RESET VALUE DESCRIPTION
Bit29 DCOFFSET_I_0 0 Adjust BB input DC offset Iref
50 µA, B[27..26] = [00]
100 µA, B[27..26] = [01]
Bit30 DCOFFSET_I_1 1 150 µA, B[27..26] = [10]
200 µA, B[27..26] = [11]
Select VCO_BIAS trim settings stored in EEPROM
0 = Use EEPROM settings if parity check is 1; otherwise, use SPI settings
Bit31 VCO_BIAS_SEL 0 1 = Use SPI settings
Recommended programming [1]
7.5.1.2 Readback Mode
Register 0 functions as a Readback register. TRF372017 implements the capability to read-back the content of
any serial programming interface register by initializing register 0.
Each read-back is composed by two phases: writing followed by the actual reading of the internal data. This is
shown in the timing diagram in Figure 2. During the writing phase, a command is sent to TRF372017 register 0
to set it in read-back mode and to specify which register is to be read. In the proper reading phase, at each rising
clock edge, the internal data is transferred into the RDBK pin and can be read at the following falling edge (LSB
first). The first clock after the LE goes high (end of writing cycle) is idle and the following 32 clocks pulses
transfer the internal register content to the RDBK pin.
7.5.1.2.1 Readback From the Internal Registers Banks
TRF372017 integrates 8 registers: Register 0 (000) to Register 7 (111). Registers 1 through 7 are used to set-up
and control the TRF372017 functionalities, while register 0 is used for the readback function.
The latter register must be programmed with a specific command that sets TRF372017 in read-back mode and
specifies the register to be read:
• Set B[31] to 1 to put TRF372017 in read-back mode.
• Set B[30,28] equal to the address of the register to be read (000 to 111).
• Set B27 to control the VCO frequency counter in VCO test mode.
7.5.1.2.1.1 Register 0 Write
Table 28. Register 0 Write
NAME RESET VALUE DESCRIPTION
B0 ADDR<0> 0
B1 ADDR<1> 0
ADDRESS B2 ADDR<2> 0 Register 0 to be programmed to set TRF372017 in readback mode.
BITS B3 ADDR<3> 1
B4 ADDR<4> 0
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Table 28. Register 0 Write (continued)
NAME RESET VALUE DESCRIPTION
B5 N/C 0
B6 N/C 0
B7 N/C 0
B8 N/C 0
B9 N/C 0
B10 N/C 0
B11 N/C 0
B12 N/C 0
B13 N/C 0
B14 N/C 0
B15 N/C 0
B16 N/C 0
B17 N/C 0
B18 N/C 0
B19 N/C 0
DATA FIELD
B20 N/C 0
B21 N/C 0
B22 N/C 0
B23 N/C 0
B24 N/C 0
B25 N/C 0
B26 N/C 0
Select Readback for VCO maximum frequency or minimum
frequency.
B27 COUNT_MODE_MUX_SEL 0 0 = Max
1 = Min
B28 RB_REG<0> X 3 LSB’s of the address for the register that is being read
B29 RB_REG<1> X Reg 0, B[30..28] = [000]
Reg 7, B[30..28] = [111]
B30 RB_REG<2> X
B31 RB_ENABLE 1 1 ≥Put the device in Readback Mode
The contents of any register specified in RB_REG can be read back during the read cycle, including register 0.
Bit0 Bit1 Bit2 Bit3 Bit4 Bit5 Bit6 Bit7 Bit8 Bit9 Bit10 Bit11 Bit12
Register address CHIP_ID NU R_SAT_ERR
Bit13 Bit14 Bit15 Bit16 Bit17 Bit18 Bit19 Bit20 Bit21 Bit22 Bit23 Bit24 Bit25 Bit26 Bit27 Bit28 Bit29 Bit30
COUNT0-7/VCO_TRM COUNT8-10/VCO_SEL COUNT11-17
Bit31
COUNT_MODE-MUX-SEL
REGISTER 0 NAME RESET VALUE DESCRIPTION
Bit0 ADDR_0 0 Register address bits
Bit1 ADDR_1 0
Bit2 ADDR_2 0
Bit3 ADDR_3 1
Bit4 ADDR_4 0
Bit5 CHIP_ID_0 1
Bit6 CHIP_ID_1 1
Bit7 NU x
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REGISTER 0 NAME RESET VALUE DESCRIPTION
Bit8 NU x
Bit9 NU x
Bit10 NU x
Bit11 NU x
Bit12 R_SAT_ERR x Error flag for calibration speed
Bit13 count_0/NU x
Bit14 count_1/NU x
Bit15 count_2/VCO_TRIM_0 x
Bit16 count_3/VCO_TRIM_1 x B[30..13] = VCO frequency counter high when
COUNT_MODE_MUX_SEL = 0 and VCO_TEST_MODE = 1
Bit17 count_4/VCO_TRIM_2 x
Bit18 count_5/VCO_TRIM_3 x
Bit19 count_6/VCO_TRIM_4 x
Bit20 count_7/VCO_TRIM_5 x
Bit21 count_8/NU x B[30..13] = VCO frequency counter low when
Bit22 count_9/VCO_sel_0 x COUNT_MODE_MUX_SEL = 1 and VCO_TEST_MODE = 1
Bit23 count_10/VCO_sel_1 x
Bit24 count<11> x
Bit25 count<12> x
Bit26 count<13> x B[20..15] = Autocal results for VCO_TRIM,
Bit27 count<14> x B[23..22] = Autocal results for VCO_SEL when
VCO_TEST_MODE = 0
Bit28 count<15> x
Bit29 count<16> x
Bit30 count<17> x
0 = Minimum frequency
Bit31 COUNT_MODE_MUX_SEL x 1 = Maximum frequency
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‘5‘ TEXAS INSTRUMENTS
VCC_LO1
VCC_DIG
GND_DIG
GND
LD
BBQ_N
BBQ_P
GND
RSVD
GND
RFOUT
VCC_MIX
GND
LO_OUT_P
LO_OUT_N
CLK
DATA
LE
EXT_VCO
BBI_N
BBI_P
GND
REFIN
GND
VCC_PLL
CP_OUT
GND
GND
VTUNE
VCC_VCO2
GND
VCC_LO2
GND
GND
VCC_D2S
GND
GND
GND
PS
RDBK
GND
GND
GND
GND
GND
GND
VCC_VCO1
SCAN_EN
75
4.7 pF
PS
LE
DATA
RDBK
CLK
22 pF
REFIN
R3
R2
C1 C2 C3
R4
C4
1mF 4.7 pF
+3.3 V
FB-1K
LoopFilter:
valuesdescribed
intable
EXT_VCO
1mF 4.7 pF
FB-1K
+3.3 V
1mF 4.7 pF
FB-1K
+3.3 V/+5.0 V
100 pF 4.7 pF
FB-1K
+3.3 V
+3.3 V
Basebandinterface
describedinapplicationinformation
BBI_N
BBI_P
1.8 pF 1000 pF 1 mF
75
+3.3 V
1.8 pF 1000 pF 1 mF
LO_OUT_P
LO_OUT_N
4.7 pF
4.7 pF
100 pF 4.7 pF
FB-1K
+5.0 V
100 pF 4.7 pF
FB-1K
+5.0 V
100 pF1 mF
FB-1K
+3.3 V
100 pF4.7 pF
FB-1K
+3.3V
LD
BBQ_N
BBQ_P
Basebandinterface
describedinapplicationinformation
22 pF
RFOUT
NC
TRF372017
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The TRF372017 is suited for quadrature up-conversion applications such as wireless radio transmitters.
8.2 Typical Application
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90.9 Ω
DAC3283
10 nH
125 Ω
450 Ω 500 Ω
1mF
GND
+5 V
2.2 pF
DNI
68 nH
2.7 pF
60.4 Ω
TRF3720
125 Ω
+5 V
450 Ω
500 Ω
1mF
GND
68 nH
60.4 Ω
10 nH
TRF372017
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Typical Application (continued)
8.2.1 Design Requirements
Table 29 shows the design requirements for this application.
Table 29. Quadrature Up-Converter Design Requirements for Wireless Transmitter Application
PARAMETER REQUIREMENT(1) TRF372017 PERFORMANCE
Gain –5 to 0 dB –3.1 dB
Noise figure, NF <21 dB 19 dB
3rd order intercept (IIP3) >+20 dBm +25 dBm
1dB compression (P1dB) >+10 dBm +11.5 dBm
ACPR >70 dBc 75 dBc
RF output frequency range 1500 to 2500 MHz 300 to 4300 MHz
LO input frequency range 1000 to 3000 MHz 300 to 4800 MHz
IF input frequency range DC - 150 MHz DC - 1 GHz
LO phase noise <–130 dBc/Hz, 1 GHz, 1 MHz offset –137 dBc/Hz, 1 GHz, 1 MHz offset
(1) These requirements represent a hypothetical application and do not reflect the performance of the TRF372017.
8.2.2 Detailed Design Procedure
8.2.2.1 DAC Interfacing With External Baseband Bias Voltage
Common-mode voltage on the baseband inputs can be generated either internally or externally. An external
interface must provide 1.7-V DC and any necessary filtering. A typical interface to a DAC device is shown in
Figure 86.
Figure 86. DAC to TRF372017 Interface With External VCM Generation
8.2.2.2 DAC Interface Using Internal VCM Generation
A typical DAC to TRF372017 interface using internal VCM generation is shown in Figure 87.
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 47
+3.3 V
75
47 pF
LO_OUT_P
LO_OUT_N
75
47 pF
DAC3283
115
634
GND
+5 V
2.2 pF
DNI
68 nH
2.7 pF
60.4
TRF3720
115
+5 V
634
GND
68 nH
60.4
90.9
10 nH
10 nH
1mF
1mF
TRF372017
SLWS224E –AUGUST 2010–REVISED JANUARY 2016
www.ti.com
Figure 87. DAC to TRF372017 Interface With Internal VCM Generation
8.2.2.3 LO Outputs
The LO outputs are open collector outputs. They require a pullup to VCC. 75-Ωpullup resistors to VCC with local
decoupling provides a good broadband match and is shown in an example circuit in Figure 88. An inductor pullup
in parallel with a cap can provide a tuned load for excellent narrowband load matching.
Figure 88. Example LO_OUT Circuit for Broadband Operation
8.2.2.4 Loop Filter
Loop filter design is critical for achieving low closed loop phase noise. Some typical loop filter component values
are given in Table 30, referenced to designators in Figure 89. These loop filters are designed using charge pump
current of 1.94 mA to minimize noise.
Table 30. Typical Loop Filter Components
fPFD (MHz) C1 (pF) C2 (pF) R2 (kΩ) C3 (pF) R3 (kΩ) C4 (pF) R4 (kΩ)
40 1000 10000 0.47 39 1.4 1.8 3.3
1.6 47 560 10 4.7 5 open 0
6.4 100 1000 5 20 5 open 0
10 270 4700 1.5 4700 1.5 open 0
30.72 2200 20000 0.47 220 0.475 220 0.475
48 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
l TEXAS INSTRUMENTS
Distribution (%)
0
5
10
15
20
25
30
23
24
25
26
27
28
29
30
31
32
OIP3 (dBm) G080
Distribution (%)
0
5
10
15
20
25
30
35
40
45
-60
-55
-50
-45
-40
-35
-30
-25
Unadjusted Carrier Suppression (dBm) G081
Distribution (%)
0
2
4
6
8
10
12
14
16
18
20
-3.9
-3.85
-3.8
-3.75
-3.7
-3.65
-3.6
-3.55
-3.5
-3.45
-3.4
-3.35
-3.3
-3.25
Voltage Gain (dB) G078
Distribution (%)
0
5
10
15
20
25
30
35
40
11
11.25
11.5
11.75
12
12.25
12.5
12.75
P1dB (dBm) G079
R3
R2
C1 C2 C3
R4
C4
CP_OUT VTUNE
TRF372017
www.ti.com
SLWS224E –AUGUST 2010–REVISED JANUARY 2016
Figure 89. Loop Filter Component Reference Designators
8.2.2.5 ESD Sensitivity
RF devices may be extremely sensitive to electrostatic discharge (ESD) (see ). To prevent damage from
electrostatic discharge (ESD), devices must be stored and handled in a way that prevents the build up of
electrostatic voltages that exceed the rated level. Rated electrostatic discharge (ESD) levels shall also not be
exceeded while the device is installed on a printed-circuit board.
8.2.3 Application Curves
Figure 90. Gain at 2300-MHz Distribution Figure 91. P1dB at 2300-MHz Distribution
Figure 92. OIP3 at 2300-MHz Distribution Figure 93. Unadjusted Carrier Suppression
at 2300-MHz Distribution
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 49
l TEXAS INSTRUMENTS
Distribution (%)
0
5
10
15
20
25
30
35
40
45
35
40
45
50
55
60
65
70
Unadjusted Sideband Suppression (dBc) G082
TRF372017
SLWS224E –AUGUST 2010–REVISED JANUARY 2016
www.ti.com
Figure 94. Unadjusted Sideband Suppression
at 2300-MHz Distribution
9 Power Supply Recommendations
The TRF372017 must be supplied with a low noise 5-V or 3.3-V supply as required. Each supply pin must
generally be isolated from the main power bus with a ferrite or other noise filtering component.
50 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
TRF372017
www.ti.com
SLWS224E –AUGUST 2010–REVISED JANUARY 2016
10 Layout
10.1 Layout Guidelines
Layout of the application board significantly impacts the analog performance of the TRF372017 device. Noise
and high-speed signals must be prevented from leaking onto power-supply pins or analog signals. Follow these
recommendations:
1. Place supply decoupling capacitors physically close to the device, on the same side of the board. Each
supply pin must be isolated with a ferrite bead.
2. Maintain a continuous ground plane in the vicinity of the device and as return paths for all high-speed signal
lines. Place reference plane vias or decoupling capacitors near any signal line reference transition.
3. The pad on the bottom of the device must be electrically grounded. Connect GND pins directly to the pad on
the surface layer. Connect the GND pins and pad directly to surface ground where possible.
4. Power planes must not overlap each other or high-speed signal lines.
5. Isolate REF_IN routing from loop filter lines, control lines, and other high-speed lines.
See Figure 95 for an example of critical component layout (for the top PCB layer).
10.2 Layout Example
Figure 95. Critical Layout of the TRF372017 EVM Board
Copyright © 2010–2016, Texas Instruments Incorporated Submit Documentation Feedback 51
l TEXAS INSTRUMENTS
TRF372017
SLWS224E –AUGUST 2010–REVISED JANUARY 2016
www.ti.com
11 Device and Documentation Support
11.1 Device Support
11.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
52 Submit Documentation Feedback Copyright © 2010–2016, Texas Instruments Incorporated
I TEXAS INSTRUMENTS Samples Samples
PACKAGE OPTION ADDENDUM
www.ti.com 23-Apr-2022
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TRF372017IRGZR ACTIVE VQFN RGZ 48 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 85 TRF372017
IRGZ
TRF372017IRGZT ACTIVE VQFN RGZ 48 250 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 85 TRF372017
IRGZ
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 23-Apr-2022
Addendum-Page 2
I TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “K0 '«m» Reel Diame|er AD Dimension deswgned to accommodate the componem wwdlh E0 Dimension desxgned to accommodate the componenl \ength KO Dimenslun deswgned to accommodate the componem thickness 7 w OveraH wwdm loe earner cape i p1 Pitch between successwe cavuy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O Sprockemoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TRF372017IRGZR VQFN RGZ 48 2500 330.0 16.4 7.3 7.3 1.5 12.0 16.0 Q2
TRF372017IRGZT VQFN RGZ 48 250 180.0 16.4 7.3 7.3 1.5 12.0 16.0 Q2
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Feb-2019
Pack Materials-Page 1
I TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TRF372017IRGZR VQFN RGZ 48 2500 350.0 350.0 43.0
TRF372017IRGZT VQFN RGZ 48 250 213.0 191.0 55.0
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Feb-2019
Pack Materials-Page 2
www.ti.com
GENERIC PACKAGE VIEW
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
VQFN - 1 mm max heightRGZ 48
PLASTIC QUADFLAT PACK- NO LEAD
7 x 7, 0.5 mm pitch
4224671/A
D + I: j uuuuwuuuww \A/ '\ U W MUUUUUEUUUUUU \ ‘ ‘ i,,,,+i, ‘ ‘ flflflWflfl Aflflflflflfl AL /flflflflflfliflflflflflfl D_/45 V
www.ti.com
PACKAGE OUTLINE
C
SEE TERMINAL
DETAIL
48X 0.30
0.18
5.6 0.1
48X 0.5
0.3
1.0
0.8
(0.2) TYP
0.05
0.00
44X 0.5
2X
5.5
2X 5.5
B7.1
6.9 A
7.1
6.9
0.30
0.18
0.5
0.3
VQFN - 1 mm max heightRGZ0048D
PLASTIC QUAD FLATPACK - NO LEAD
4219046/B 11/2019
PIN 1 INDEX AREA
0.08 C
SEATING PLANE
1
12 25
36
13 24
48 37
(OPTIONAL)
PIN 1 ID 0.1 C A B
0.05
EXPOSED
THERMAL PAD
49 SYMM
SYMM
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
SCALE 1.900
DETAIL
OPTIONAL TERMINAL
TYPICAL
LEE) 339438§GU€89£$ TL? 0 fiJ’WGHW’fi’fi PE 0 o 1 o ¢7§7+ 177;]797 $7 7&77 ,9 7%77Q7i CD ,0 O i 0 CL g ¢ % 1 1 ¢ ‘ g o 4; 4} i g 1 BBGBEBEEHBH $917777 +—4 p
www.ti.com
EXAMPLE BOARD LAYOUT
10X
(1.33)
10X (1.33) 6X (1.22)
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
48X (0.24)
48X (0.6)
( 0.2) TYP
VIA
44X (0.5)
(6.8)
(6.8)
6X
(1.22)
( 5.6)
(R0.05)
TYP
VQFN - 1 mm max heightRGZ0048D
PLASTIC QUAD FLATPACK - NO LEAD
4219046/B 11/2019
SYMM
1
12
13 24
25
36
37
48
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:12X
49
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED METAL
METAL
SOLDER MASK
OPENING
SOLDER MASK DETAILS
NON SOLDER MASK
DEFINED
(PREFERRED)
EXPOSED METAL
V mm; ma @9983 L Cb Tm
www.ti.com
EXAMPLE STENCIL DESIGN
48X (0.6)
48X (0.24)
44X (0.5)
(6.8)
(6.8)
16X ( 1.13)
(1.33)
TYP
(0.665 TYP)
(R0.05) TYP
(1.33) TYP
(0.665)
TYP
VQFN - 1 mm max heightRGZ0048D
PLASTIC QUAD FLATPACK - NO LEAD
4219046/B 11/2019
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
SYMM
METAL
TYP
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 49
66% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:15X
SYMM
1
12
13 24
25
36
37
48
49
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