STMicroelectronics 的 STAC4932B 规格书

I \. II@ II
1
1
3
3
2
STAC780-4B
Pin connection
Pin Connection
1 Drain
2 Source (bottom side)
3 Gate
Features
Order code Frequency VDD POUT Gain Efficiency
STAC4932B 123 MHz 100 V 1000 W 24.6 dB 60 %
• Excellent thermal stability
• Common source push-pull configuration
• POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz
• Pulse conditions: 1ms, 10%
• In compliance with the 2002/95/EC European directive
• ST air-cavity STAC package technology
Description
The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended
for 100 V pulse applications up to 250 MHz. This device is suitable for use in
industrial, scientific and medical applications. The STAC4932B benefits from the
latest generation of efficient, patent-pending STAC package technology.
Product status
STAC4932B
Product summary
Order code STAC4932B
Marking STAC4932
Package STAC780-4B
Packing Box
Base / Bulk qty 20 / 80
HF/VHF/UHF RF power N-channel MOSFET
STAC4932B
Datasheet
DS6724 - Rev 8 - April 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical data
1.1 Maximum ratings
Table 1. Absolute maximum ratings (TCASE = 25 °C)
Symbol Parameter Value Unit
V(BR)DSS Drain source voltage (VGS = 0 V, TJ = 150 °C) 200 V
V DGR Drain-gate voltage (R GS= 1 MΩ) 200 V
V GS Gate-source voltage ±20 V
T JMaximum operating junction temperature 200 °C
T STG Storage temperature range -65 to +150 °C
1.2 Thermal data
Table 2. Thermal data (1ms, 10%)
Symbol Parameter Value Unit
R thJC Junction - case thermal resistance 0.075 °C/W
1.3 ESD protection characteristics
Table 3. ESD protection
Symbol Test Methodology Class
HBM Human Body Model (per JESD22-A114) 2
STAC4932B
Electrical data
DS6724 - Rev 8 page 2/13
2Electrical characteristics
( TCASE= +25 °C, unless otherwise noted)
2.1 Static
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V, IDS = 100 mA,
TJ = 150 °C 200 250 V
IDSS Zero gate voltage drain
leakage current VGS = 0 V, VDS = 100 V 1 mA
IGSS Gate-source leakage current VGS = 20 V, VDS = 0 V 250 nA
VDS(ON) Drain-source on voltage VGS = 10 V, ID = 10 A 3.6 V
VTH Gate-source threshold
voltage IDS = 250 mA 2 4 V
GFS Forward transconductance VDS = 10 V, ID = 2.5 A 6 S
CISS Input capacitance
VGS = 0 V, VDS = 100 V,
f = 1 MHz
570 pF
COSS Ouput capacitance 134 pF
CRSS Reverse transfer capacitance 8 pF
2.2 Dynamic
Table 5. Dynamic (1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
POUT Output power 1000 1200 - W
ŋDDrain efficiency POUT = 1000 W 60 - %
Gps Power gain POUT = 1000 W 26 - dB
1. VDD = 100 V, IDQ = 2 x 250 mA, f = 123 MHz, PW 1ms, DC = 10%
STAC4932B
Electrical characteristics
DS6724 - Rev 8 page 3/13
3Impedance
Figure 1. Current conventions
Typical input
impedance
Typical load
impedance
ZDL
D
S
ZIN
G
Table 6. Impedance data
Freq. (MHz) Z IN(Ω) Z DL(Ω)
123 MHz (pulsed) 1.3 - j 2.8 7.7 - j 9.4
Note: Measured gate-to-gate and drain-to-drain, respectively (balanced configuration).
STAC4932B
Impedance
DS6724 - Rev 8 page 4/13
Figure 2. Safeo m 7: E . E930
4Typical performance
Figure 2. Safe operating area
AM01107v1
0
1
10
100
1 10 100 1000
Max Drain Current - Id (A)
Drain supply voltage - Vdd (V)
1ms
10ms
DC
Operation limited by Rds(on)
Tcase = +25 °C / Tj = +200°C
Single Pulse
Figure 3. Transient thermal impedance
Single - Repetitive pulse
0.00
0.05
0.10
0.15
0.20
0.25
0.30
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Rectangular power pulse width (s)
Thermal Impedance Zth j-c (°C/W)
single pulse
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
AM06094v1
STAC4932B
Typical performance
DS6724 - Rev 8 page 5/13
C R7 CB =D.0142598 Ohm 0:0 .0042075 F I||-—| J 0 R8 C7 R=.0427775 Ohm 0:0.0032727 F ”J 0 R6 C6 R=.1425926 Ohm 0:0.0444624 F j III-u—l 0 R5 05 =.0503704 Ohm 0:0 29641096 F EL 1 J
Figure 4. Transient thermal model
AM06106V1
Figure 5. Power gain vs. output power
12
14
16
18
20
22
24
26
28
30
0 100 200 300 400 500 600 700 800 900 1000 110 0 1200 1300
Power gain (dB)
Output power(W)
100V
90V
AM06084v1
F = 123 MHz
I
DQ
= 2 x 100 mA
Pulse width = 1ms
Duty cycle = 10%
STAC4932B
Typical performance
DS6724 - Rev 8 page 6/13
Figure 6. Efficiency vs. output power
STAC4932B
Typical performance
DS6724 - Rev 8 page 7/13
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5Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
5.1 STAC780-4B package information
Figure 7. STAC780-4B package outline
DM00481937 rev.2
STAC4932B
Package information
DS6724 - Rev 8 page 8/13
Table 7. STAC780-4B mechanical data
Symbol
Milimeters
Min Typ Max
A 3.76 3.86
A1 5.03 5.13
B 4.57 5.08
C 9.65 9.91
D 17.78 18.08
E 33.88 34.19
F 0.13 0.18
G 0.97 1.14
H 1.52 1.70
I 4.83 5.33
J 9.52 9.78
K 27.69 28.19
L 3.20 3.25 3.30
M 3.43 3.51 3.58
M 3.30 3.38 3.45
p 7.14 7.21 7.29
q 1.45
R1 0.64
R2 1.52
r 1.52
s 0.51
Θ 10°
CH1 2.03
CH2 1.52
STAC4932B
STAC780-4B package information
DS6724 - Rev 8 page 9/13
DF—Hfl DEED D \
5.2 Marking information
LEGEND
Marking Composition Field
A - M ARKING AREA
B - ST LOGO
C - Assy Pl ant
(PP)
D - BE Sequenc e
(LLL)
E - Diffusion Traceability Plant
(WX)
F - COUNTRY OF ORIGIN
(MAX CHAR ALLOWED = 3)
G - Test & Finishing Plant
(TF)
H - Assy Year
(Y)
I - Assy Week
(WW)
A
B
C D E
F G H I
PACKAGE FACE : TOP
STAC4932B
Marking information
DS6724 - Rev 8 page 10/13
Revision history
Table 8. Document revision history
Date Revision Changes
19-Feb-2010 1 First release.
26-May-2010 2 Document status promoted from preliminary data to datasheet.
03-Aug-2010 3 Updated description on cover page and Table 3.
03-Sep-2010 4 Updated figures: 3, 4 and 5.
12-Sep-2011 5
Inserted new Section 6: Marking, packing and shipping specifications.
Updated Table 6.
Minor text changes.
01-Jul-2013 6
Modified pin labeling in Figure 1: Pin connection.
Modified document title.
Minor text corrections throughout document.
27-Jan-2014 7 Modified pin labeling in Figure 1: Pin connection.
09-Apr-2020 8 Updated package information. Added Section 1.3 ESD protection characteristics.
STAC4932B
DS6724 - Rev 8 page 11/13
Contents
1Electrical data .....................................................................2
1.1 Maximum ratings ...............................................................2
1.2 Thermal data ..................................................................2
1.3 ESD protection characteristics....................................................2
2Electrical characteristics...........................................................3
2.1 Static.........................................................................3
2.2 Dynamic ......................................................................3
3Impedance ........................................................................4
4Typical performance ...............................................................5
5Package information...............................................................8
5.1 STAC780-4B package information ................................................8
5.2 Marking information ...........................................................10
Revision history .......................................................................11
STAC4932B
Contents
DS6724 - Rev 8 page 12/13
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STAC4932B
DS6724 - Rev 8 page 13/13