STMicroelectronics 的 SD2942 规格书

K ’I hieaugmented M244 epoxy sea‘ed WW ILL 1 Drain 3 Source 2 Gate
November 2016
DocID11736 Rev 5
1/17
This is information on a product in full production.
www.st.com
SD2942
HF/VHF/UHF RF power N-channel MOSFET
Datasheet - production data
Figure 1: Pin connection
Features
Gold metallization
Excellent thermal stability
Common source push-pull configuration
POUT = 350 W min. with 15 dB gain @ 175
MHz
Low RDS(on)
Description
The SD2942 is a gold metallized N-channel MOS
field-effect RF power transistor. The SD2942
offers 25% lower RDS(ON) than industry standard
and 20% higher power saturation than ST
SD2932. These characteristics make the SD2942
ideal for 50 V DC very high power applications up
to 250 MHz.
Table 1: Device summary
Order code
Package
Packing
SD2942W
SD2942(1)
M244
Tube
Notes:
(1)For more details please refer to Section 6: "Marking, packing and shipping specifications".
Contents
SD2942
2/17
DocID11736 Rev 5
Contents
1 Electrical data .................................................................................. 3
1.1 Maximum ratings ............................................................................... 3
1.2 Thermal data ..................................................................................... 3
2 Electrical characteristics ................................................................ 4
3 Impedance data ............................................................................... 5
4 Typical performance ....................................................................... 6
5 Test circuit (175 MHz) .................................................................... 10
6 Marking, packing and shipping specifications ............................ 13
7 Package information ..................................................................... 14
7.1 M244 package information .............................................................. 14
8 Revision history ............................................................................ 16
SD2942
Electrical data
DocID11736 Rev 5
3/17
1 Electrical data
1.1 Maximum ratings
TCASE = 25 °C
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
V(BR)DSS(1)
Drain source voltage
130
V
VDGR
Drain-gate voltage (RGS = 1 MΩ)
130
V
VGS
Gate-source voltage
±40
V
ID
Drain current
40
A
PDISS
Power dissipation
500
W
TJ
Max. operating junction temperature
+200
°C
TSTG
Storage temperature
-65 to +150
°C
Notes:
(1)TJ = 150 °C
1.2 Thermal data
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Junction-to-case thermal resistance
0.35
°C/W
Electrical characteristics
SD2942
4/17
DocID11736 Rev 5
2 Electrical characteristics
TCASE = 25 °C
Table 4: Static
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS(1)
VGS = 0 V IDS = 100 mA
130
V
IDSS
VGS = 0 V VDS = 50 V
100
µA
IGSS
VGS = 20 V VDS = 0 V
250
nA
VGS(Q)
VDS = 10 V ID = 250 mA
1.5
4
V
VDS(ON)
VGS = 10 V I D = 10 A
3.0
V
GFS
VDS = 10 V I D = 5 A
5
mho
CISS
VGS = 0 V VDS = 50 V f = 1 MHz
415
pF
COSS
VGS = 0 V VDS = 50 V f = 1 MHz
236
pF
CRSS
VGS = 0 V VDS = 50 V f = 1 MHz
17
pF
Notes:
(1)TJ = 150 °C
Table 5: Dynamic
Symbol
Test conditions
Min.
Typ.
Max.
Unit
POUT
VDD = 50 V IDQ = 500 mA f = 175 MHz
350
W
GPS
VDD = 50 V IDQ = 500 mA POUT = 350 W
f = 175 MHz
15
17
dB
ηD
VDD = 50 V IDQ = 500 mA POUT = 350 W
f = 175 MHz
55
61
%
Load
mismatch
VDD = 50 V IDQ = 500 mA POUT = 350 W
f = 175 MHz
All phase angles
5:1
VSWR
E] Typmax mpul \mpedance Tymcal dram \oad Impedance
SD2942
Impedance data
DocID11736 Rev 5
5/17
3 Impedance data
Figure 2: Impedance data
Table 6: Impedance data
f
ZIN(Ω)
ZDL(Ω)
250 MHz
1.3 - j 1.9
1.9 + j 3.2
230 MHz
1.2 - j 1.8
2.1 + j 3.7
200 MHz
1.1 - j 1.6
2.7 +j 4.2
175 MHz
1.0 - j 1.4
3.3 + j 4.8
100 MHz
1.8 - j 2.5
7.5 + j 9
50 MHz
3.2 - j 4.4
10 + j 12
1000 20 cm; 18 v ,\=10v A 10 5 0053 3 100 M 5 2 12 g ’5 10 <3 cm="" 8="" 10="" 5="" 4="" tc:+25°c="" 2="" 13010="" "c="" 1="" 0="" 4—te="-ZO”C" 0="" 5="" 10="" 15="" 20="" 25="" 30="" 35="" 40="" 45="" 50="" vm(v)="" 0="" 1="" 2="" 3="" 4="" 5="" as="" (v)="" 115="" 20="" no="" 19="" \="" \d17a=""><05 \="" n="" 5="" \="" 20="" ”c="" e="" \d:11a‘d="mA" “3="" 5="" §="" e="" e10“="" ~="" 317="" \="" 2‘5="" 0:“="" x="" g="" +25“c="" 3°95="" 0:”="" ”="" 0="" ‘6="">m m=2A u 15 +90 c 000 ‘ ld=1A)< 14="" (755="" \gzojsa="" ‘nw‘a="" 13="" vm="50v‘" \"="2x250" ma="" ”0="" 25="" 0="" 25="" 50="" 75="" 100="" ‘2="" freq="" :175="" mhz="" '="" 0="" 50="" 100150="" 200250="" 300="" 350400450="" pw(w)="" 7cm="">
Typical performance
SD2942
6/17
DocID11736 Rev 5
4 Typical performance
Figure 3: Capacitance vs. drain voltage
Figure 4: Drain current vs. gate voltage
Figure 5: Gate-source voltage vs. case temperature
Figure 6: Power gain vs. POUT and case temperature
Nu cm 60 50 40 30 20 10 +25 ”C -20 ”e +30 “c v D: so \A In x250 mA Freq, 75 MHz 0 50 100150 200 250 300 350 400 450 P W(W) PM 450 400 350 300 250 200 150 100 50 50 v‘ x“ : 2x250 mA =175 MHZ 2 3 4 5 s 7 a 9101112PMW) D O 1 |dq:2x250 mA' 0 012 3 4 5 B 7 B 91011121314PMW) P um (w A50 720 °c 400 35a 25 "c 300 250 +80 ‘c 200 150 ‘0“ Freq=175 MHZ 50 \dq=2x250 mA 0 Fm:7 w -4 -3 -2 -1 o 1 2 3 vmw) PW (W) 450 400 350 300 250 200 150 100 2 Freq:175 MHz qu=2><2so ma="" 4="" 28="" 32="" 36="" ad="" 44="" 48="" vdd(v)="" r0104)="" mm)="" o.n2="" 04="" can="" use="" 034="" 25="" 30="" 35="" au="" 45="" so="" 55="" so="" to="" my="" 55="" 1o="" 75="" an="" as="" e]="">
SD2942
Typical performance
DocID11736 Rev 5
7/17
Figure 7: Efficiency vs. case temperature
Figure 8: POUT vs. input power and case temperature
Figure 9: POUT vs. input power and drain voltage
Figure 10: POUT vs. gate voltage and case
temperature
Figure 11: POUT vs. drain voltage and input power
Figure 12: Maximum thermal resist vs. case
temperature
Max.dram currem 1000 1 1a (A) 00 10 Tease = +25 “C / T +200 “C m 100 1000 Drain supmy vauage - van (V) zm j—c (“C/W) 0.40 0.35 0.30 025 020 015 010 005 000 _S1r;1e w“ —n 1 _n z _n :1 _u A —0 5 _n n _n 1 _n x —n ! 1 E-OA 1 E-03 1 E-02 1 E-a1 1 E-Do Rectangular power pu‘se w1dkh (s) Ava/02AM
Typical performance
SD2942
8/17
DocID11736 Rev 5
Figure 13: Maximum safe operating area
Figure 14: Transient thermal impedance
R R7 g5 m uzmsa Ohm I m WM” F éflc Rs c7 R: umm on,“ 1 0:0 mum r 1 R5 rz: «5112212 um \n 02676135 I fl c woman E]
SD2942
Typical performance
DocID11736 Rev 5
9/17
Figure 15: Transient thermal model
|:“|: .r
Test circuit (175 MHz)
SD2942
10/17
DocID11736 Rev 5
5 Test circuit (175 MHz)
Figure 16: 175 MHz production test circuit schematic
Dimensions at component symbols are references for component placement. Gap
between ground and transmission lines is + 0.002{0.05} - 0.000{0.00} typ.
Table 7: 175 MHz test circuit part list
Component
Description
R1, R2, R5, R6
470 Ohm 1 W, surface mount chip resistor
R3, R4
360 Ohm 0.5 W, carbon comp. axial lead resistor or equivalent
R7, R8
560 Ohm 2 W, resistor 2 turn wire air-wound axial lead resistor
R9, R10
20 kOhm 3.09 W, 10 turn wirewound precision potentiometer
C1, C4
680 pF ATC 130B surface mount ceramic chip capacitor
C2, C3, C7, C8,
C17, C19, C20,
C21
10000 pF ATC 200B surface mount ceramic chip capacitor
C5
75 pF ATC 100B surface mount ceramic chip capacitor
C6
ST40 25 pF - 115 pF miniature variable trimmer
C9, C10
47 pF ATC 100B surface mount ceramic chip capacitor
C11, C12, C13
43 pF ATC 100B surface mount ceramic chip capacitor
C14, C15, C24,
C25
1200 pF ATC 700B surface mount ceramic chip capacitor
C16, C18
470 pF ATC 700B surface mount ceramic chip capacitor
C22, C23
0.1 μF / 500 V surface mount ceramic chip capacitor
C26, C27
0.01 μF / 500 V surface mount ceramic chip capacitor
C28
10 μF / 63 aluminum electrolytic axial lead capacitor
SD2942
Test circuit (175 MHz)
DocID11736 Rev 5
11/17
Component
Description
B1
50 Ohm RG316 O.D 0.076[1.93] L = 11.80[299.72] flexible coaxial cable 4
turns through ferrite bead
B2
50 Ohm RG-142B O.D 0.165[4.19] L = 11.80[299.72] flexible coaxial cable
T1
R.F. transformer 4:1, 25 Ohm O.D RG316-25 O.D 0.080[2.03]
L = 5.90[149.86] flexible coaxial cable 2 turns through ferrite multi-aperture
core
T2
R.F. transformer 1:4, 25 Ohm semi-rigid coaxial cable O.D. 0.141[3.58]
L = 5.90[149.86]
L1
Inductor λ 1/4 wave 50 Ohm O.D 0.165[4.19] L = 11.80 [299.72] flexible
coaxial cable 2 turns through ferrite bead
FB1, FB5
Shield bead
FB2, FB6
Multi-aperture core
FB3
Multilayer ferrite chip bead (surface mount)
FB4
Surface mount EMI shield bead
PCB
Woven glass reinforced PTFE microwave laminate 0.06”, 1 oz EDCu, both
sides, εr = 2.55
Figure 17: 175 MHz test circuit photomaster
Test circuit (175 MHz)
SD2942
12/17
DocID11736 Rev 5
Figure 18: 175 MHz test circuit
SD2942
Marking, packing and shipping specifications
DocID11736 Rev 5
13/17
6 Marking, packing and shipping specifications
Table 8: Packing and shipping specifications
Order code
Packing
Pieces per tray
Dry pack humidity
Lot code
SD2942W
Tube
15
< 10%
Not mixed
Figure 19: SD2942 marking layout
Table 9: Marking specifications
Symbol
Description
W
Wafer process code
CZ
Assembly plant
xxx
Last 3 digits of diffusion lot
VY
Diffusion plant
MAR
Country of origin
CZ
Test and finishing plant
y
Assembly year
yy
Assembly week
FULL R <4><> Den/1,52 R N <1>
Package information
SD2942
14/17
DocID11736 Rev 5
7 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
7.1 M244 package information
Figure 20: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package outline
SD2942
Package information
DocID11736 Rev 5
15/17
Table 10: M244 (0.400 x .860 4L BAL N/HERM W/FLG) package mechanical data
Dim.
mm
Min.
Typ.
Max.
A
5.59
5.84
B
5.08
C
3.02
3.28
D
9.65
9.91
E
19.81
20.82
F
10.92
11.18
G
27.94
H
33.91
34.16
I
0.10
0.15
J
1.52
1.78
K
2.59
2.84
L
4.83
5.84
M
10.03
10.34
N
21.59
22.10
Revision history
SD2942
16/17
DocID11736 Rev 5
8 Revision history
Table 11: Document revision history
Date
Revision
Changes
18-Oct-2005
1
First issue.
04-Jan-2006
2
Complete version.
14-Apr-2010
3
Added Figure 13, Figure 14 and Figure 15.
25-Oct-2011
4
Inserted Chapter 7: Marking, packing and shipping
specifications.
24-Nov-2016
5
Updated Table 2: "Absolute maximum ratings".
SD2942
DocID11736 Rev 5
17/17
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2016 STMicroelectronics – All rights reserved