Infineon Technologies 的 BCV61 规格书

(ifineon thS
2011-10-13
1
BCV61
NPN Silicon Double Transistor
• To be used as a current mirror
• Good thermal coupling and VBE matching
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1
2
3
4
EHA00012
C2 (1)
Tr.2Tr.1
C1 (2)
E1 (3) E2 (4)
Type Marking Pin Configuration Package
BCV61B
BCV61C
1Ks
1Ls
1 = C2
1 = C2
2 = C1
2 = C1
3 = E1
3 = E1
4 = E2
4 = E2
SOT143
SOT143
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
(transistor T1)
VCEO 30 V
Collector-base voltage (open emitter)
(transistor T1)
VCBO 30
Emitter-base voltage VEBS 6
DC collector current IC100 mA
Peak collector current, tp < 10 ms ICM 200
Base peak current (transistor T1) IBM 200
Total power dissipation, TS = 99 °C Ptot 300 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤170 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
(ifineon
2011-10-13
2
BCV61
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics of T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
V(BR)CEO 30 - - V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V(BR)CBO 30 - -
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 6 - -
Collector cutoff current
VCB = 30 V, IE = 0
ICBO - - 15 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
ICBO - - 5 µA
DC current gain1)
IC = 0.1 mA, VCE = 5 V
hFE 100 - - -
DC current gain1)
IC = 2 mA, VCE = 5 V, BCV61B
IC = 2 mA, VCE = 5 V, BCV61C
hFE
200
420
290
520
450
800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
-
-
90
200
250
600
mV
Base-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
-
700
900
-
-
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
580
-
660
-
700
770
1Puls test: t ≤ 300 µs, D = 2%
(ifineon
2011-10-13
3
BCV61
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Base-emitter forward voltage
IE = 10 µA
IE = 250 mA
VBES
0.4
-
-
-
-
1.8
V
Matching of transistor T1 and transistor T2
at IE2 = 0.5mA and VCE1 = 5V
TA = 25 °C
TA = 150 °C
IC1 / IC2
-
0.7
0.7
-
-
-
-
1.3
1.3
-
Thermal coupling of transistor T1 and
transistor T2 1) T1: VCE = 5V
Maximum current of thermal stability of IC1
IE2 - 5 - mA
AC characteristics for transistor T1
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 250 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 0.95 - pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb - 9 -
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 kΩ,
f = 1 kHz, ∆ f = 200 Hz
F- 2 - dB
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h11e - 4.5 - kΩ
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h12e - 2 - 10-4
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
h21e 100 - 900 -
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
h22e - 30 - µS
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
(ifineon +— _34 fi @
2011-10-13
4
BCV61
Test circuit for current matching
EHN00001
T1 T2
...
A
21
43
V
CE1
CO
V
CO
V
C1
Ι
Ι
E2
= constant
Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV
Characteristic for determination of VCE1 at specified RE range with
IE2 as parameter under condition of IC1/IE2 = 1.3
EHN00002
T1 T2
...
A
21
43
V
CE1
C1
Ι
Ι
E2
= constant
R
E
R
E
Note: BCV61 with emitter resistors
(ifineon
2011-10-13
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BCV61
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
1
2
3
4
5
6
7
8
9
10
pF
12
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
mW
350
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00942BCV 61
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
P
DC
P
p
t
@ @7 —m_ 0 ‘ 8 j o 0 0), iflnfineon, WIDE
2011-10-13
6
BCV61
Package SOT143
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
RF s
2005, June
Date code (YM)
BFP181
Type code
56
Pin 1
0.8 0.81.2
0.9 1.1 0.9
1.2
0.8
0.8
0.8
-0.05
+0.1
1.9
1.7
±0.1
2.9
+0.1
-0.05
0.4
0.1 MAX.
12
34
0.25
M
B
±0.1
1
10˚ MAX.
0.15 MIN.
0.2 A
M
2.4 ±0.15
0.2
10˚ MAX.
A
1.3 ±0.1
0...8˚
0.08...0.15
2.6
4
3.15
Pin 1
8
0.2
1.15
B
Manufacturer
(ifineon www‘infineomzom
2011-10-13
7
BCV61
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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