NXP USA Inc. 的 KMZ51 规格书

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Philips Semiconductors PHILIPS

DATA SHEET

Product specification

Supersedes data 1998 Mar 24 2000 Jun 13

DISCRETE SEMICONDUCTORS

KMZ51

Magnetic field sensor

M3D495

HHHH ’HHHH

2000 Jun 13 2

Philips Semiconductors Product specification

Magnetic field sensor KMZ51

FEATURES

•High sensitivity

•Integrated compensation coil

•Integrated set/reset coil.

APPLICATIONS

•Navigation

•Current and earth magnetic field measurement

•Traffic detection.

DESCRIPTION

The KMZ51 is an extremely sensitive magnetic field

sensor, employing the magnetoresistive effect of thin-film

permalloy. The sensor contains one magnetoresistive

Wheatstone bridge and integrated compensation and

set/reset coils. The integrated compensation coil allows

magnetic field measurement with current feedback loops

to generate an output that is independent of drift in

sensitivity. The orientation of sensitivity may be set or

changed (flipped) by means of the integrated set/reset coil.

A short current pulse should be applied to the

compensation coil to recover (set) the sensor after

exposure to strong disturbing magnetic fields. A negative

current pulse will reset the sensor to reversed sensitivity.

By use of periodically alternated flipping pulses and a

lock-in amplifier, output is made independent of sensor

and amplifier offset.

PINNING

PIN SYMBOL DESCRIPTION

1+I

flip flip coil

CC bridge supply voltage

3 GND ground

4+I

comp compensation coil

5−Icomp compensation coil

6−VObridge output voltage

7+V

bridge output voltage

8−Iflip flip coil

handbook, halfpage

MGD827

pin 1

index

Hext

Fig.1 Simplified outline.

QUICK REFERENCE DATA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

VCC bridge supply voltage −58V

S sensitivity (uncompensated) 12 16 −

Voffset offset voltage −1.5 −+1.5 mV/V

Rbridge bridge resistance 1 −3kΩ

comp compensation coil resistance 100 170 300 Ω

Acomp compensation coil field factor; note 1 19 22 25

mV/V

kA/m

--------------

Am⁄

-------------

2000 Jun 13 3

Philips Semiconductors Product specification

Magnetic field sensor KMZ51

Notes

1. The compensation coil generates a field Hcomp =A

comp ×Icomp in addition to the external field Hext. Sensor output will

become zero if Hext =−Hcomp.

2. Average power consumption of the flipping coil, defined by current, pulse duration and pulse repetition rate may not

exceed the specified limit, see Chapter “Limiting values”.

CIRCUIT DIAGRAM

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Rflip flip coil resistance 1 2 3 Ω

Iflip (min) minimum recommended flipping current; note 2 800 1000 1200 mA

tflip (min) minimum flip pulse duration; note 2 1 3 100 µs

SYMBOL PARAMETER MIN. MAX. UNIT

VCC bridge supply voltage −9V

tot total power dissipation −130 mW

Tstg storage temperature −65 +150 °C

Tbridge bridge operating temperature −40 +125 °C

Icomp maximum compensation current −15 mA

Iflip (max) maximum flipping current −1500 mA

Pflip (max) maximum flipping power dissipation −50 mW

Visol voltage between isolated systems:

flip coil and Wheatstone bridge;

compensation coil and Wheatstone bridge;

flip coil and compensation coil

−60 V

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

handbook, halfpage

8765

1234

MGD793

GND

+VO

+IF+IC

−IF−IC

−VO

VCC

Z1Z1

Fig.2 Simplified circuit diagram.

2000 Jun 13 4

Philips Semiconductors Product specification

Magnetic field sensor KMZ51

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tamb =25°C unless otherwise specified.

SYMBOL PARAMETER VALUE UNIT

Rth j-a thermal resistance from junction to ambient 155 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC bridge supply voltage −58V

yoperating range in sensitive direction −0.2 −+0.2 kA/m

Hxoperating range perpendicular to

sensitive direction

−0.2 −+0.2 kA/m

S sensitivity open circuit 12 16 −

TCS temperature coefficient of sensitivity Ts=−25 to +125 °C−0.31 −%/K

TCVOtemperature coefficient of output voltage VCC =5V;

amb =−25 to +125 °C

−−0.4 −%/K

ICC 3 mA;

Tamb =−25 to +125 °C

−−0.1 −%/K

Rbridge bridge resistance resistance pins 2 to 3 1 −3kΩ

TCRbridge temperature coefficient of bridge

resistance

Tbridge =−25 to +125 °C−0.3 −%/K

Voffset offset voltage −1.5 0 +1.5 mV/V

TCVoffset temperature coefficient of offset voltage Tbridge =−25 to +125 °C−30 +3

FH hysteresis of output voltage −−2 %FS

Rcomp resistance of compensation coil resistance pins 4 to 5 100 170 300 Ω

Acomp field factor of compensation coil 19 22 25

Rflip resistance of set/reset conductor resistance pins 1 to 8 1 2 3 Ω

TCRflip temperature coefficient of resistance of

set/reset coil

Tflip =−25 to +125 °C−0.39 −%/K

Iflip recommended flipping current for stable

operation

±800 ±1000 ±1200 mA

tflip flip pulse duration 1 3 100 µs

Risol isolating resistance resistance pins 1 to 2,

1 to 4 and 2 to 4

1−−mΩ

isol voltage between isolated systems voltage pins 1 to 2, 1 to 4

and 2 to 4

−−50 V

f operating frequency 0 −1 MHz

mV/V

kA/m

--------------

µV/V

-------------

A/m

----------

2000 Jun 13 5

Philips Semiconductors Product specification

Magnetic field sensor KMZ51

PACKAGE OUTLINE

UNIT A

max. A1A2A3bpcD

(1) E(2) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

inches

1.75 0.25

0.10 1.45

1.25 0.25 0.49

0.36 0.25

0.19 5.0

4.8 4.0

3.8 1.27 6.2

5.8 1.05 0.7

0.6 0.7

0.3 8

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

1.0

0.4

SOT96-1

detail X

vMA

(A )

pin 1 index

076E03 MS-012

0.069 0.010

0.004 0.057

0.049 0.01 0.019

0.014 0.0100

0.0075 0.20

0.19 0.16

0.15 0.050 0.244

0.228 0.028

0.024 0.028

0.012

0.010.010.041 0.004

0.039

0.016

0 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

97-05-22

99-12-27

2000 Jun 13 6

Philips Semiconductors Product specification

Magnetic field sensor KMZ51

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective specification Development This data sheet contains the design target or goal specifications for

product development. Specification may change in any manner without

notice.

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product specification Production This data sheet contains final specifications. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

at these or at any other conditions above those given in the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

no representation or warranty that such applications will be

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductors customers using or selling these products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

the use of any of these products, conveys no licence or title

under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2000 Jun 13 7

Philips Semiconductors Product specification

Magnetic field sensor KMZ51

NOTES

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Internet: http://www.semiconductors.philips.com

2000 69

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Printed in The Netherlands 613520/03/pp8 Date of release: 2000 Jun 13 Document order number: 9397 750 07047

NXP USA Inc. 的 KMZ51 规格书

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