IXYS 的 CMA30E1600PN 规格书

Single Thyristor 3 N E72873
CMA30E1600PN
Single Thyristor
Thyristor
2 1
3
Part number
CMA30E1600PN
Backside: Isolated
TAV
T
V V1.42
RRM
23
1600
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-220FP
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
● Isolation Voltage: V~
2500
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20150827dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
L-I IXYS CMA30E1600PN Symbol Delinikion Condikions min. lyp. max. iUniI
CMA30E1600PN
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.42
R2.5 K/W
min.
23
VV
10T = 25°C
VJ
T = °C
VJ
mA2V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
40
P
tot
50 WT = 25°C
C
30
1600
forward voltage drop
total power dissipation
Unit
1.80
T = 25°C
VJ
125
V
T0
V0.90T = °C
VJ
150
r
T
17 mΩ
V1.42T = °C
VJ
I = A
T
V
30
1.92
I = A60
I = A60
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1600T = 25°C
VJ
IA36
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0.5
average gate power dissipation
C
J
9
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
260
280
240
240
A
A
A
A
220
240
340
325
1600
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
90 A
T
P
G
= 0.2
di /dt A/µs;
G
=0.2
DRM
cr
V = ⅔ V
DRM
GK
500
1.3 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
28 mA
T = °C-40
VJ
1.6 V
50 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.2 V
I
GD
gate non-trigger current
1 mA
V = ⅔ V
D DRM
125
latching current
T = °C
VJ
90 mA
I
L
25t µs
p
=10
I A;
G
= 0.2 di /dt A/µs
G
= 0.2
holding current
T = °C
VJ
80 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0.5 di /dt A/µs
G
= 0.5
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs10 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 30 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 30 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20150827dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
_ IXYS CMA30E1600PN T0-220FP Symbol Delinikion Condifions min. lyp. max. iUni! Fan descriplion 000 O O bode 4 L11st
CMA30E1600PN
Ratings
Logo
Part Number
DateCode
Assembly Code
Product Marking
Assembly Line
XXXXXX
YYWW Z
abcdef
C
M
A
30
E
1600
PN
Part description
Thyristor (SCR)
Thyristor
(up to 1800V)
Single Thyristor
TO-220ABFP (3)
=
=
=
CMA30E1600PZ TO-263AB (D2Pak) (2HV) 1600
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque
0.4
T
VJ
°C150
virtual junction temperature
-40
Weight g2
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N60
mounting force with clip
20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
1.6 1.0
2.5 2.5
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
35 A
per terminal
125-40
terminal to terminal
CS22-12io1M
CLA30E1200PB
TO-220ABFP (3)
TO-220AB (3)
1200
1200
CLA30E1200PC
CLA30E1200HB
CS22-08io1M
TO-263AB (D2Pak) (2)
TO-247AD (3)
TO-220ABFP (3)
1200
1200
800
TO-220FP
Similar Part Package Voltage class
CMA30E1600PB TO-220AB (3) 1600
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
CMA30E1600PN 505254Tube 50CMA30E1600PNStandard
2500
ISOL
T
stg
°C150
storage temperature
-40
2100
threshold voltage
V0.9
mΩ
V
0 max
R
0 max
slope resistance *
14
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20150827dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
:I IXYS CMA30E1600PN 1 7 r——— of o ‘ o 1 ~— 4 __ 4.50 4.90 0.177 0.193 2.34 2.74 0.092 0.108 2.56 2.96 0.101 0.117 —_ 0.70 0.90 0.028 0.035 0.45 0.60 0.018 0.024 15.67 16.07 0.617 0.633 9.96 10.36 0.392 0.408 2.54 BSC 0.100 BSC .4 l.— 6.48 6.88 0.255 0.271 12.68 13.28 0.499 0.523 3.03 3.43 0.119 0.135 3.08 3.28 0.121 0.129 3.20 3.40 0.126 0.134
CMA30E1600PN
Ø P A
A1
H
A2
Q
L1
D
E
L
b
b1 c
e
1 2 3
min max min max
A4.50 4.90 0.177 0.193
A1 2.34 2.74 0.092 0.108
A2 2.56 2.96 0.101 0.117
b0.70 0.90 0.028 0.035
c0.45 0.60 0.018 0.024
D15.67 16.07 0.617 0.633
E9.96 10.36 0.392 0.408
e
H6.48 6.88 0.255 0.271
L12.68 13.28 0.499 0.523
L1 3.03 3.43 0.119 0.135
Ø P 3.08 3.28 0.121 0.129
Q3.20 3.40 0.126 0.134
Dim.
Millimeters Inches
2
.
54
BSC
0
.
100
BSC
2 1
3
Outlines TO-220FP
IXYS reserves the right to change limits, conditions and dimensions. 20150827dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
L-I IXYS CMA30E1600PN 6 25" Hm \HHH ‘0 // // / /
CMA30E1600PN
0 40 80 120 160
0
10
20
30
40
0,01 0,1 1
100
150
200
2
5
0
0,5 1,0 1,5 2,0
0
10
20
30
40
50
60
1 10 100 1000 10000
0,0
0,5
1,0
1,5
2,0
2,5
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
100
1
0
00
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
I
T(AV)M
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Triggering: A = no; B = possible; C = safe
Fig. 6 Max. forward current at
case temperature
Fig. 7 Transient thermal impedance junction to case
Fig. 5 Gate controlled delay time t
gd
0 10 20 30
0
10
20
30
40
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
0 25 50 75
0
1
2
3
4
V
G
[V]
I
G
[mA]
I
GD
: T
VJ
= 125°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
= 25°C
I
GD
: T
VJ
= 0°C
I
GD
: T
VJ
= -40°C
A
B
B
B
C
10
-2
10
-1
10
0
10
1
10
-1
10
0
10
1
10
2
t
gd
[µs]
I
G
[A]
lim.
typ.
T
VJ
= 125°C
i R
thi
(K/W) t
i
(s)
1 0.1 0.01
2 0.06 0.0001
3 0.2 0.02
4 0.35 0.4
5 1.79 0.15
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20150827dData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved