Diodes Incorporated 的 LMN200B02 规格书

mDES ® LMNZOOBOZ
DS30658 Rev. 7 - 2
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LMN200B02
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
General Description
LMN200B02 is best suited for applications where the load needs to
be turned on and off using control circuits like micro-controllers,
comparators etc. particularly at a point of load. It features a
discrete pass transistor with stable VCE(SAT) which does not
depend on the input voltage and can support continuous maximum
current of 200 mA . It also contains a discrete N-MOSFET that can
be used as control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part of a
circuit or as a stand alone discrete device.
Features
• Voltage Controlled Small Signal Switch
• N-MOSFET with Gate Pull-Down Resistor
• Surface Mount Package
• Ideally Suited for Automated Assembly Processes
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 8
• Ordering Information: See Page 8
• Weight: 0.006 grams (approximate)
Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure
DDTB142JU_DIE Q1 PNP Transistor 10K 470 ⎯ 2
DSNM6047_DIE (with Gate Pull-Down
Resistor) Q2 N-MOSFET ⎯ ⎯ 37K 2
Maximum Ratings, Total Device @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3) PD 200 mW
Power Derating Factor above 125°C Pder 1.6 mW/°C
Output Current Iout 200 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor) (Note 3) RθJA 625 °C/W
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Fig. 1: SOT-363
S
D
G
C
E
B
Q2
NMOS
R3
37K
R2
470
Q1
PNP
R1 10K
123
456
C_Q1
E_Q1 G_Q2 D_Q2
S_Q2
B_Q1
DSNM6047_DIE
DDTB142JU_DIE
Fig. 2 Schematic and Pin Configuration
1
2
3
4
5
6
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Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1) @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Supply Voltage VCC -50 V
Input Voltage Vin +5 to -6 V
Output Current IC -200 mA
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2) @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS 60 V
Drain Gate Voltage (RGS ≤1M Ohm) VDGR 60 V
Gate-Source Voltage Continuous
Pulsed (tp<50 uS) VGSS +/-20 V
+/-40
Drain Current (Page 1: Note 3) Continuous (Vgs = 10V)
Pulsed (tp <10 uS, Duty Cycle <1%) ID 115 mA
800
Continuous Source Current IS 115 mA
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Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current ICBO ⎯ ⎯ -100 nA
VCB = -50V, IE = 0
Collector-Emitter Cut Off Current ICEO ⎯ ⎯ -500 nA
VCE = -50V, IB = 0
Emitter-Base Cut Off Current IEBO ⎯ -0.5 -1 mA
VEB = -5V, IC = 0
Collector-Base Breakdown Voltage V(BR)CBO -50 ⎯ ⎯ V IC = -10 uA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -50 ⎯ ⎯ V IC = -2 mA, IB = 0
Input Off Voltage VI(OFF) ⎯ -0.55 -0.3 V
VCE = -5V, IC = -100uA
Output Voltage VOH -4.9 ⎯ ⎯ V VCC = -5V, VB = -0.05V,
RL = 1K
Ouput Current (leakage current same as ICEO) IO(OFF) ⎯ ⎯ -500 nA
VCC = -50V, VI = 0V
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage VCE(SAT)
⎯ ⎯ -0.15 V
IC = -10 mA, IB = -0.5 mA
⎯ ⎯ -0.2 V
IC = -50mA, IB = -5mA
⎯ ⎯ -0.2 V
IC = -20mA, IB = -1mA
⎯ ⎯ -0.25 V
IC = -100mA, IB= -10mA
⎯ ⎯ -0.25 V
IC = -200mA, IB= -10mA
⎯ ⎯ -0.3 V
IC = -200mA, IB = -20mA
Equivalent On-Resistance* RCE(SAT) ⎯ ⎯ 1.5 Ω IC = -200mA, IB = -10mA
DC Current Gain hFE
60 150 ⎯ ⎯ VCE = -5V, IC = -20 mA
60 215 ⎯ ⎯ V
CE = -5V, IC = -50 mA
60 245 ⎯ ⎯ V
CE = -5V, IC = -100 mA
60 250 ⎯ ⎯ VCE = -5V, IC = -200 mA
Input On Voltage VI(ON) -2.45 -0.7 ⎯ V VO = -0.3V, IC = -2 mA
Output Voltage (equivalent to VCE(SAT) or VO(ON) ) VOL ⎯ -0.065 -0.15 V
VCC = -5V, VB = -2.5V,
Io/II = -50mA /-2.5mA
Input Current Ii ⎯ -9 -28 mA
VI = -5V
Base-Emitter Turn-on Voltage VBE(ON) ⎯ -1.13 -1.3 V
VCE = -5V, IC = 200mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ -3.2 -3.6 V IC = -50mA, IB = -5mA
⎯ -4.6 -5.5 IC = -80mA, IB = -8mA
Input Resistor (Base), +/- 30% R2 ⎯ 0.47 ⎯ KΩ ⎯
Pull-up Resistor (Base to Vcc supply), +/- 30% R1 ⎯ 10 ⎯ KΩ ⎯
Resistor Ratio (Input Resistor/Pull-up
resistor) +/- 20% R1/R2 ⎯ 21 ⎯ ⎯ ⎯
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain Bandwidth Product) fT ⎯ 200 ⎯ MHz VCE = -10V, IE = -5mA,
f = 100MHz
Collector Capacitance, (Ccbo-Output Capacitance) CC ⎯ 20 ⎯ pF VCB = -10V, IE = 0A,
f = 1MHz
* Pulse Test: Pulse width, tp<300 μS, Duty Cycle, d<=0.02
Tmical Characteristics S‘FAT‘O / R / FPO /
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Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2) @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS V
(BR)DSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current (Drain Leakage
Current) IDSS ⎯ ⎯ 1 μA VGS =0V, VDS = 60V
Gate-Body Leakage Current, Forward IGSSF ⎯ ⎯ 0.95 mA
VGS = 20V, VDS = 0V
Gate-Body Leakage Current, Reverse IGSSR ⎯ ⎯ -0.95 mA
VGS = -20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage) VGS(th) 1 1.9 2.2 V
VDS = VGS, ID = 0.25mA
Static Drain-Source On-State Voltage VDS(on) ⎯ 0.10 1.5 V VGS = 5V, ID = 50mA
⎯ 0.15 3.75 VGS = 10V, ID = 115mA
On-State Drain Current ID(on) 500 ⎯ ⎯ mA VGS = 10V,
VDS ≥2XVDS(ON)
Static Drain-Source On-Resistance RDS(on) ⎯ 1.6 3 Ω VGS = 5V, ID = 50mA
⎯ 1.4 2 VGS = 10V, ID = 500mA
Forward Transconductance gFS 80 240 ⎯ mS VDS ≥2XVDS(ON), ID = 115 mA
80 350 ⎯ VDS ≥2XVDS(ON), ID = 200 mA
Gate Pull-Down Resistor, +/- 30% R3 ⎯ 37 ⎯ KΩ ⎯
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 50 pF
VDS = -25V, VGS = 0V,
f = 1MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 5 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(on) ⎯ ⎯ 20 ns
VDD = 30V, VGS =10V,
ID = 200mA,
RG = 25 Ohm, RL = 150 Ohm
Turn-Off Delay Time tD(off) ⎯ ⎯ 40 ns
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage VSD ⎯ 0.90 1.5 V
VGS = 0V, IS = 115 mA
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current) IS ⎯ ⎯ 115 mA ⎯
Maximum Pulsed Drain-Source Diode Forward
Current ISM ⎯ ⎯ 800 mA ⎯
Notes: 4. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
0
50
25 50 75 100 125 150 175
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 3 Max Power Dissipation vs.
Ambient Temperature (Total Device)
A
100
150
200
0
(Note 3)
250
300
350
CG ECTOR VOLTAG EM‘TTER OLTAG DC CURRENT GA‘N 0.4 0.3 02 D 30 25 20 15 10 400 300 200 ‘00 Typical Pre-Biased PNP Transistor (O1) Characteristics wcnfi : m v Y=wsc W A:mvc 1 \\\\ \\\ \\ \\\“ 0.1 ICNB: 10 mm TA=55C Hm {I Bf?“ \\ MW 50* \ 2m \ 10 100 1000 CO ECTOR CLT 5 EM \‘I'I'ER VOLTAG 05 o 0! IC/ : 20 c; a. P w P N 01 \\\\ 0 um \\\ I TA: 15m: U 8540 T,=125'c mm \\\HHH 10 100 L000
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Typical Pre-Biased PNP Transistor (Q1) Characteristics
I , COLLECTOR CURRENT (A)
Fig. 4 V vs. I
C
CE(SAT) C
V,
C
O
LLE
C
T
O
R
V
O
L
T
A
G
E (V)
CE(SAT)
I , COLLECTOR CURRENT (A)
Fig. 5 V vs. I
C
CE(SAT) C
V,
C
O
LLE
C
T
O
R
V
O
L
T
A
G
E (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 6 V vs. I
C
BE(SAT) C
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(SAT)
110 100 1,000
I , COLLECTOR CURRENT (mA)
Fig. 7 V vs. I
C
BE(ON) C
V , BASE EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 8 h vs. I
C
FE C
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
RA‘N CURRENT Tvpical N-Channel MOSFET (02) Characte 1.4 vm. = 10v v65 = «N 12 10 DB OE TA: Isa‘c 1DRA1N CURRENT DA 02 .2 1 1 1 A v :1uv > us I VD5:VES 1:D25mA ,, 3 \ :u‘sec '3 \ g 0 “7125‘s _; o I m m M I F E < o="" e=""> 0001 0.01 01 1 1 1 1111 7 1 1 v65:1nv , mm a 7 3 5 “(1256 I :15U‘C // ' ‘l’ / 4 _ / \1u=115mA 2 ,’ ~- 3 2 1 ' " 13:5Elr1A \ 1 o 0001 001 0.1 u 2 4 6 8 1o 12 14 1a 15 20
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Typical N-Channel MOSFET (Q2) Characteristics
0
0.2
0.4
0.6
0.8
1.0
01234567
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Output Characteristics
DS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fig. 10 Transfer Characteristics
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
T , JUNCTION TEMPERATURE (°C)
Fig. 11 Gate Threshold Voltage
vs. Junction Temperature
J
0
1.2
1.4
1.6
1.8
2.0
2.
2
-50
-75 -25 0 255075100125150
0
1
2
3
4
5
I , DRAIN CURRENT (A)
Fig. 12 Static Drain-Source On-Resistance
vs. Drain Current
D
R, STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ()
DS(on)
Ω
1
I , DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
D
4
R, STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ()
DS(on)
Ω
0
V GATE SOURCE VOLTAGE (V)
Fig. 14 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS
,
R, STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ()
DS(on)
Ω
2 5 1 Vus , mv mm x“: 1mm 2 0.1 ru=sumA 1.5 // 0.0' 1 O 5 0.001 7/5 -50 -25 0 2: 50 75 100125150 0 1 2 3 4 5 VS], SOURCE-DRAW VOLTAGE (V) Hg 15 Reverse Dram Current vs Source-Drain Vouage 900 800 TDD 0 1 600 500 400 o 01 300 rA: 15m: 200 100 00m 0 o 2 a 4 o 5 0.8 VSDr BODV DIODE FORWARD VOLTAGE (V) In, DRAW CURRENT (A) Frg r7 Reverse Drain Current Fig 18 Forward Transler Conductance vs Body Diode Forward Voltage vs. Dram Current (VDS>ID Rwam)
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T , JUNCTION TEMPERATURE ( C)
Fig. 15
j
°
Static Drain-Source On-State Resistance
vs. Junction Temperature
R , STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ( )
DS(on)
Ω
I , REVERSE DRAIN CURRENT (A)
S
0.5 11.5 22.5
I , REVERSE DRAIN CURRENT (A)
S
g , FORWARD TRANSCONDUCTANCE (mS)
FS
Typical Application Circuit
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Application Details
PNP Transistor (DDTB142JU) and N-MOSFET
(DSNM6047) with gate pull-down resistor integrated
as one in LMN200B02 can be used as a discrete
entity for general purpose applications or as an
integrated circuit to function as a Load Switch. When
it is used as the latter as shown in Fig 19, various
input voltage sources can be used as long as it does
not exceed the maximum ratings of the device.
These devices are designed to deliver continuous
output load current up to a maximum of 200 mA. The
MOSFET Switch draws no current, hence loading of
control circuit is prevented. Care must be taken for
higher levels of dissipation while designing for higher
load conditions. These devices provide high power
and also consume less space. The product mainly
helps in optimizing power usage, thereby conserving
battery life in a controlled load system like portable
battery powered applications. (Please see Fig. 20
for one example of a typical application circuit used
in conjunction with voltage regulator as a part of a
power management system)
Typical Application Circuit
Ordering Information (Note 5)
Device Packaging Shipping
LMN200B02-7 SOT-363 3000/Tape & Reel
Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code T U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
PM2 = Product Type Marking Code,
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Fig. 19 Circuit Diagram
Fig. 20
Vin
Control
D
E
S
B
G
C
Q1 PNP
Q2 NMOS
R2 470
R1
10K
R3
37K
LOAD
DDTB142JU
DSNM6047
Vout
5v Supply
Vout
Gnd
Vin
Control
U2
Voltage Regulator
IN OUT
Control Logic
Circuit (PIC,
Comparator
etc)
U1
Vin
OUT1
GND
Diodes Inc.
U3
LNM200B02
1
3
2
4
5
6
E_Q1
D_Q2
G_Q2
S_Q2
B_Q1
C_Q1
Load Switch
Point of
Load
PM2
YM
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Mechanical Details
Suggested Pad Layout
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
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