Eaton - Electronics Division 的 EDS Polymer Suppressors Selection Guide 规格书

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Overview
Eaton's Voltage Variable Material (VVM) ESD suppressors have
unique properties that are highly preferred in ESD suppression
applications. The polymer matrix responds to an overvoltage
condition by rapidly changing from a high impedance state to a low
impedance state.
Eaton utilizes this polymeric matrix for fast response, ultra-low
capacitance, and very low current leakage. The device is activated
by overvoltage threats and clamps to a low value to protect
sensitive circuit components.
How it works
Eaton's VVM ESD suppressor families are board level circuit
protection devices designed exclusively for the fast, transient
overvoltages associated with ESD. When a sufficient overvoltage
occurs it exhibits a dramatic increase in the ability to conduct
electrons. The nature of the material creates a bi-directional part,
which means that only one device is required to provide complete
ESD protection regardless of the surge polarity.
In a typical application, the device is placed across a signal line
leading to an integrated circuit and ground. The device exhibits
minimal capacitance and is “invisible” to the circuit during the
normal operation. Under normal operating voltages (typically 3 to
15 V) the high impedance of the device insulates each signal line
from ground. When an ESD event occurs, the voltage variable
material switches to a conductive state within nanoseconds. The
voltage across signal line collapses to the clamping level, and
current is shunted through the device to the ground.
When the overvoltage event ends, the circuit returns to its normal
operating state as the device switches back to its >1012Ohm, high
resistance state and “invisibility.”
ESD Suppression selection guide for polymer
ESD suppressors
Technical Note Effective December 2017
Supersedes March 2007
VVM ESD suppressor selection guide:
Part Package Capacitance
Operating Current Clamp
Number SizeLines Voltage (pF @ 1 kHz ~ Leakage Voltage Specification
(Vdc)1.8 GHz) (nA @ 12 Vdc)V
0402ESDA-MLP1 0402 1 0 ~ 30 < 0.15< 0.1 35 IEC61000-4-2, Level 4
0603ESDA-MLP7 0603 1 0 ~ 30 < 0.15< 0.1 35 IEC61000-4-2, Level 4
PS04LTVA1 0402 10 ~ 12 < 0.15< 0.1 25IEC61000-4-2, Level 4
0603ESDA2-TR20603 1 0 ~ 30 < 0.15< 0.1 35 IEC61000-4-2, Level 4
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EATON www.eaton.com/electronics
ESD Suppression selection guide for polymer
ESD suppressors
Technical Note
Effective December 2017
Device marking
VVM ESD Suppressors are marked on the tape and reel packages,
not individually. Since the product is bi-directional and symmetrical,
no orientation marking is required.
Test methodology
Full product characterization requires use of multiple test methods.
Each test method reveals unique information about the device
response. The results of all of the tests must be analyzed to fully
understand the VVM ESD Suppressor response to an overvoltage
event.
Electrostatic Discharge (ESD) pulse
The ESD pulse is the defining test for an ESD protective device.
The ESD pulse is an extremely fast rising transient event. The
pulse, as characterized in IEC 61000-4-2, has a rise time of less
than 1 ns, peak currents up to 45 A, and voltage levels to 15 kV
(Figure 1). Characteristics determined by this test are those such
as voltage overshoot, peak voltage, clamping voltage, peak
current, and device resistance.
Due to the extremely fast rate of rise of the ESD pulse, the test
setup can have a definite impact on the above factors. Variables
such as wiring inductance and probe capacitance can produce
inaccurate readings on an otherwise capable oscilloscope.
Figure 2. Transmission Line Pulse
Definition of terms
Clamp Voltage – The voltage at which the VVM device stabilizes
during the transition from high to low impedance. This is the
voltage experienced by the circuit, after stabilizing, for the duration
of the ESD transient.
Trigger Voltage – The voltage at which the VVM device begins to
function. When the ESD threat voltage reaches this level,
the VVM device begins the transition from high impedance to low
impedance, shunting the ESD energy to ground.
Threat Voltage – The voltage that the test equipment is set to
operate (i.e. the voltage across the discharge capacitor).
Peak Current – The maximum instantaneous current level that a
device will receive. IEC-61000-4-2 states that the peak current
should be 30 A at 8 kV ESD and 45 A at 15 kV ESD.
ESD Transient pulse energy controlled by
the VVM ESD suppressor
Figure 3 shows typical VVM ESD suppressor response to an 8 kV
contact ESD pulse. Triggered polymer in the device conducts
excess energy to ground and prevents system damage by ESD
transient threat. As the polymer resistance drops current flows to
ground. The top scope trace indicates current, and the bottom
scope trace indicates voltage.
(perIEC61000-4-2)
0
10
20
30
40
50
60
70
80
90
100
-100 102030405060708090
Time(nS)
PercentCurrent
Figure 1. IEC 6100-4-2 ESD pulse
Transmission Line Pulse (TLP)
The Transmission Line Pulse tester implements a controlled
impedance cable to deliver a square wave current pulse. The
advantage of this technique is that the constant current of the
square wave allows the behavior of the protection structure to be
more accurately studied.
The actual implementation of this technique produces a waveform
that has a slightly slower rise time that the ESD pulse but can be
correlated to the deliver approximately the same surge current and
energy (Figure 2). This controlled impedance pulse provides a more
accurate depiction of the trigger voltage of the device because of
the reduced voltage overshoot caused by a fast rising transient and
the reactive components of the test fixture.
-10
10
30
50
70
90
110
-104090140190
Time(nS)
InputVoltageOutputVoltageActivated
PercentVoltage
Figure 3. Typical device response to an 8 kV ESD
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Eaton
1000 Eaton Boulevard
Cleveland, OH 44122
United States
www.eaton.com/electronics
© 2017 Eaton
All Rights Reserved
Printed in USA
Publication No.
December 2017
Eaton is a registered trademark.
All other trademarks are property
of their respective owners.
Technical Note
Effective December 2017
ESD Suppression selection guide for polymer
ESD suppressors
VVM ESD suppressor protects against ESD
voltage transient without affecting signal
quality
VVM ESD Suppressors have an ultra low capaci-tance of <0.15 pF
and when typically installed from the signal line to ground have a
negligible effect on the signal.
Figure 4 illustrates the test conducted with a precision network
analyzer on a 50 circuit at up to 6 GHz. Only a 0.2 dB deviation
from the original signal was recorded.
The setup was similar to the addition of the VVM ESD suppressor
to a circuit with very fast digital signal or a mobile phone antenna.
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-10 1 2 3 4 5 6
GHz
drop in attenuation (dB)
Figure 4. VVM device induced interference with signal quality
Signal frequency does not affect the
capacitance of the device
The device capacitance is very low and constant over a wide
frequency range. The typical capacitance is less than 0.15 pF over
the tested range of 0.1 MHz to 1.8 GHz. Figure 5 demonstrates
the capacitance will remain same over the life cycle of the device
(i.e. the number of the ESD pulse does not change the device
capacitance).
Clamp voltage remains consistent despite
repeated ESD pulses
As depicted in Figure 6, the VVM ESD suppressors are highly
reliable and stable over hundreds of pulses. The VVM ESD
suppressors have been tested with fast rate ESD pulses at 8 kV
contact discharge. Clamping voltage measured at every pulse
shows minimal changes throughout the test.
Typical non-triggered (off state) current
leakage of VVM is very low at normal
operating voltages and temperatures
The current leakage of the VVM ESD Suppressor is typically very low,
well under 1 nA, even over 12 Vdc operating voltage (Figure 7). Some
increase in the current leakage may be expected at much higher
operating voltage and elevated temperature.
Figure 7. Average off state current leakage vs. temperature
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0500 1000 1500 2000
Frequency(MHz)
Capacitance(pF)
0Pulse
100 Pulse
200 Pulse
300 Pulse
400 Pulse
500 Pulse
Figure 5. Capacitance vs. frequency curve
0
10
20
30
40
50
60
70
0100 200 300 400 500 600
ESD Clamping Voltage (V)
Numberof 8 kV ESD Pulses
Figure 6. ESD Clamping voltage vs. number of 8 kV ESD Pulses
24 VDC
12VDC
6VDC
ReferenceTemperature
0
0.2
0.4
0.6
0.8
1
-55 -30-520457095120
Temperature C)
Leakage Current(nA)