onsemi 的 NUS5531MT 规格书

0N Semiconductor® EEEE 3333
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 1
Publication Order Number:
NUS5531MT/D
NUS5531MT
Main Switch Power
MOSFET and Single
Charging BJT
−12 V, −6.2 A, Single P−Channel FET with
Single PNP low Vce(sat) Transistor,
3x3 mm WDFN Package
This device integrates one high performance power MOSFET and
one low Vce(sat) transistor, greatly reducing the layout space and
optimizing charging performance in battery−powered portable
electronics.
Features
•High Performance Power MOSFET
•Single Low Vce(sat) Transistor as Charging Power Mux
•3.0x3.0x0.8 mm WDFN Package
•Independent Pin−out Provides Circuit Flexibility
•Low Profile (<0.8 mm) for Easy Fit in Thin Environments
•This is a Pb−Free Device
Applications
•Main Switch and Battery Charging Mux for Portable Electronics
•Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
8
7
6
5
1
2
3
4
Figure 1. Simple Schematic
(Top View)
Emitter
Emitter
Collector
Source
Base
N/C
Gate
Drain
VCEO MAX VEBO MAX IC MAX
Low Vce(sat) PNP (Wall/USB)
−7.0 V−20 V −2.0 A
WDFN8
CASE 506BC
Device Package Shipping†
ORDERING INFORMATION
5531 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
MARKING DIAGRAM
5531
AYWW G
G
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUS5531MTR2G WDFN8
(Pb−Free)
3000/Tape & Reel
http://onsemi.com
(Note: Microdot may be in either location)
1
8
V(BR)DSS RDS(on) TYP ID MAX
MOSFET
32 mW @ −4.5 V
−12 V
44 mW @ −2.5 V
−6.2 A
Emitter
Emitter
Collector
Source
Base
NC
GATE
Drain
(Bottom View)
PIN ASSIGNMENT
1
2
3
4
8
7
6
5
Collector
Drain
10
9
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2
P−Channel Power MOSFET Maximum Ratings (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Units
Drain−to−Source Voltage VDSS −12 V
Gate−to−Source Voltage VGS ±8.0 V
Continuous Drain Current (Note 1) Steady State TA = 25°CID−5.47 A
TA = 85°C−4.0
t ≤ 5 s TA = 25°C−6.2
Power Dissipation (Note 1) Steady State
TA = 25°C
PD1.46 W
t ≤ 10 s 2.1
Continuous Drain Current (Note 2) Steady State TA = 25°CID−4.4 A
TA = 85°C−3.2
Power Dissipation (Note 3) TA = 25°C PD0.418 W
Pulsed Drain Current tp = 10 msIDM −25 A
Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C
Operating Case Temperature (Note 3) TC−55 to 125 °C
Source Current (Body Diode)2IS−2.8 A
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Units
Junction−to−Ambient – Steady State (Note 3) RqJA 299 °C/W
Junction−to−Ambient – t < 10 s (Note 3) RqJA 81.4 °C/W
Junction−to−Ambient – Steady State (Note 1) RqJA 85.5 °C/W
Junction−to−Ambient – t < 10 s (Note 1) RqJA 58.7 °C/W
Junction−to−Case – t < 10 s (Note 3) yJC 26 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 sq in [1 oz] including traces).
2. Surface−mounted on FR4 board using 0.5 in sq pad size, 1 oz. Cu.
3. Surface−mounted on FR4 board using 50 sq mm pad size, 1 oz. Cu.
P−Channel MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA−12.0 V
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V(BR)DSS/TJID = −250 mA, ref to 25°C−10.1 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = −12 V
TJ = 25°C−1.0 mA
TJ = 125°C−10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±8 V ±200 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA−0.45 −0.67 −1.1 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ2.68 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −3.0 A 32 40 mW
VGS = −2.5 V, ID = −3.0 A 44 50
Forward Transconductance gFS VDS = −16 V, ID = −3.0 A 5.9 S
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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P−Channel MOSFET Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1.0 MHz,
VDS = −12 V
1329 pF
Output Capacitance COSS 200
Reverse Transfer Capacitance CRSS 116
Total Gate Charge QG(tot) VGS = −4.5 V, VDS = −12 V,
ID = −3.0 A
13 nC
Threshold Gate Charge QG(th) 1.1
Gate−to−Source Charge QGS 1.7
Gate−to−Drain Charge QGD 2.5
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(on) VGS = −4.5 V, VDD = −12 V,
ID = −3.0 A, RG = 3.0
8ns
Rise Time tr17.5
Turn−Off Delay Time td(off) 80
Fall Time tf56.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage VSD VGS = 0 V,
IS = −1.0 A
TJ = 25°C−0.66 −1.2 V
TJ = 125°C−0.54
Reverse Recovery Time trr VGS = 0 V,
dISD/dt = 100 A/ms,
IS = −1.0 A
70.8 ns
Charge Time ta14.3
Discharge Time tb56.4
Reverse Recovery Charge QRR 44 nC
Single−PNP Transistor Maximum Ratings (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Units
Collector−Emitter Voltage VCEO −20 V
Collector−Base Voltage VCBO −20 V
Emitter−Base Voltage VEBO −7.0 V
Collector Current, Continuous IC−2.0 A
Collector Current, Peak IC−4.0 A
Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C
Power Dissipation, TA = 25°C (Note 5) PD1.58 W
Thermal Resistance (Note 5) RqJA 61.5 °C/W
Power Dissipation, TA = 25°C (Note 6) PD0.43 W
Thermal Resistance (Note 6) RqJA 293 °C/W
5. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 sq in [1 oz] including traces)
6. Surface−mounted on FR4 board using 50 sq mm pad size, 1 oz. Cu.
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4
Single−PNP Transistor Electrical Characteristics (TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Collector−Emitter Breakdown
Voltage
VbrCEO IC = −10 mA, IB = 0 −20 V
Collector−Base Breakdown Voltage VbrCBO IC = −0.1 mA, IE = 0 −20 V
Emitter−Base Breakdown Voltage VbrEBO IE = −0.1 mA, IC = 0 −7.0 V
Collector−Emitter Cutoff Current ICES VCES = −15 V −0.1 mA
ON CHARACTERISTICS
DC Current Gain (Note 7) hFE IC = −1.0 A, VCE = −2.0 V 180 −
DC Current Gain (Note 7) hFE IC = −2.0 A, VCE = −2.0 V 150 −
Collector−Emitter Saturation Voltage VCE(sat) IC = −1.0 A, IB = −0.01 A −0.10 −0.12 V
Collector−Emitter Saturation Voltage VCE(sat) IC = −1.0 A, IB = −0.1 A −0.065 −0.09 V
Collector−Emitter Saturation Voltage VCE(sat) IC = −2.0 A, IB = −0.2 A −0.13 −0.18 V
Base−Emitter Saturation Voltage
(Note 7)
VBE(sat) IC = −1.0 A, IB = −0.01 A −0.9 V
Base−Emitter Turn−On Voltage
(Note 7)
VBE(on) IC = −1.0 A, IB = −2.0 A −0.9 V
Cutoff Frequency (Note 8) fTIC = −100 mA, VCE = −5.0 V
f = 100 MHz
100 MHz
Input Capacitance (Note 8) Cibo VEB = −0.5 V, f = 1.0 MHz 330 pF
Output Capacitance (Note 8) Cobo VCB = −3.0 V, f = 1.0 MHz 100 pF
7. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
8. Guaranteed by design but not tested.
Figure 2. Typical Application Circuit
Main Battery
BAT_FET_N
CHR/USB_ctl
N/C
R_sns
from Wall/USB
Supply
Voltage
VDD
8
7
6
5
1
2
3
4
from Wall/USB
-1.7 - -E.0v v55 7 —2.5 v Ves
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TYPICAL CHARACTERISTICS − MOSFET
Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)
6543210
0
1
2
3
4
5
6
2.01.51.00.5
0
1
2
3
4
5
6
Figure 5. On−Resistance vs. Drain Current Figure 6. On−Resistance vs. Drain Current and
Gate Voltage
−ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A)
654321
0.02
0.03
0.04
0.05
654321
0.02
0.03
0.04
0.05
Figure 7. On−Resistance Variation with
Temperature
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.6
0.8
1.0
1.2
1.4
1.6
12108642
100
1,000
10,000
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
−IDSS, LEAKAGE (nA)
TJ = 25°C
VGS = −1.4 V
−1.5 V
−1.6 V
−1.7 − −8.0 V VDS ≥ −10 V
VGS = 4.5 V
TJ = 100°C
TJ = 25°C
TJ = −55°C
TJ = 100°C
TJ = 25°C
TJ = −55°C
VGS = −2.5 V
TJ = 25°C
VGS = −4.5 V
150
ID = −3 A
VGS = −4.5 V TJ = 150°C
TJ = 100°C
VGS = 0 V
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TYPICAL CHARACTERISTICS − MOSFET
Figure 9. Capacitance Variation
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
1286420−2−4
0
400
800
1200
1600
2000
2400
2800
14121086420
0
1
2
3
4
5
6
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1,000
1.00.80.60.40.20
0.01
0.1
1
10
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
0.01
0.1
1
10
100
C, CAPACITANCE (pF)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
−IS, SOURCE CURRENT (A)
−ID, DRAIN CURRENT (A)
10
TJ = 25°C
VDS = 0 V
Ciss
Crss
Coss ID = −3 A
TJ = 25°C
td(off)
td(on)
tf
tr
VGS = 0 V TJ = 25°C
TJ = 150°CTJ = −55°C
100 ms
1 ms
10 ms
dc
Mounted on 2″ sq.
FR4 board (0.5″ sq.
2 oz. Cu single
sided) with MOSFET
die operating.
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
VDD = −12 V
ID = −3.0 A
VGS = −4.5 V
QT
VDS
VGS
Qgd
Qgs
12
10
8
6
4
2
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Ciss
VGS = 0 V
−VGS −VDS
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7
TYPICAL CHARACTERISTICS − MOSFET
Figure 14. FET Thermal Response
t, TIME (s)
1E+001E−011E−031E−04 1E−021E−051E−06
0.001
0.01
0.1
1
RqJA, EFFECTIVE TRANSIENT
THERMAL RESPONSE
1E+01 1E+02 1E+03
Single Pulse
D = 0.5
0.2
0.1
0.05
0.02
0.01
150) o=c (2,0 vp
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8
TYPICAL CHARACTERISTICS − BJT
−55°C
150°C
IC/IB = 10
25°C
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 16. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A)
101.00.10.010.001
0
0.05
0.1
0.15
0.2
0.25
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
101.00.10.010.001
100
150
300
350
500
101.00.10.010.001
0.3
0.4
0.5
0.6
0.7
0.8
1.0
1.2
Figure 19. Base Emitter Turn−On Voltage vs.
Collector Current
Figure 20. Saturation Region
IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
101.00.10.010.001
0.1
0.2
0.3
0.4
0.5
0.8
0.9
1.0
100101.00.10.01
0
0.2
0.4
0.6
0.8
1.0
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
VBE(sat), BASE EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE EMITTER TURN−ON
VOLTAGE (V)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
IC/IB = 100
25°C
−55°C
IC, COLLECTOR CURRENT (A)
101.00.10.010.001
0
0.05
0.1
0.15
0.2
0.35
VCE(sat), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
150°C
0.25
0.3
600
550
200
250
400
450 0.9
150°C (5.0 V)
150°C (2.0 V)
25°C (5.0 V)
25°C (2.0 V)
−55°C (5.0 V)
−55°C (2.0 V)
25°C
−55°C
150°C
0.6
0.7 25°C
−55°C
150°C
VCE = −2.0 V IC = 500 mA
300 mA
10 mA
100 mA
IC/IB = 10
1.1
0.1
0.3
0.5
0.7
0.9
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9
TYPICAL CHARACTERISTICS − BJT
Cibo (pF)
Figure 21. Input Capacitance Figure 22. Output Capacitance
VEB, EMITTER BASE VOLTAGE (V)
4.03.02.01.00
125
150
300
325
350
Cibo, INPUT CAPACITANCE (pF)
VCB, COLLECTOR BASE VOLTAGE (V)
168.06.00
50
70
90
130
170
Cobo, OUTPUT CAPACITANCE (pF)
150
6.05.0
200
225
250
275
175
Cobo (pF)
2.0 4.0 141210
110
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10
PACKAGE DIMENSIONS
WDFN8, 3x3, 0.65P
CASE 506BC−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
B
E
D
D2
E2
BOTTOM VIEW
b
e8X
0.10 B
0.05
AC
C
K
8X
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X 0.10 C
8X
A
A1
(A3)
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
L
8X
14
58
D3
DIM MIN MAX
MILLIMETERS
A0.70 0.80
A1 0.00 0.05
A3 0.20 REF
b0.25 0.35
D3.00 BSC
D2 1.00 1.20
E3.00 BSC
E2 1.70 1.90
e0.65 BSC
K0.20 −−−
L0.25 0.45
8X
0.55
2.60
1.94
0.35
1
0.65
PITCH
3.30
1.20
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8X
DIMENSIONS: MILLIMETERS
D3 0.95 1.15
G2 0.15 BSC
G3 0.20 BSC
1.30 1.15
G3
G2
L1
DETAIL A
L
OPTIONAL
CONSTRUCTIONS
L
DETAIL B
MOLD CMPDEXPOSED Cu
OPTIONAL
CONSTRUCTIONS
DETAIL B
DETAIL A
L1 −−− 0.15
NOTE 4
0.10 BAC
e/2
0.10 BAC
0.10 BAC
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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