onsemi 的 NLPS22990, NLPS22990N 规格书

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© Semiconductor Components Industries, LLC, 2019
November, 2019 − Rev. 1
1Publication Order Number:
NLPS22990/D
On-Resistance Load Switch
5.5 V, 3.9 mW, 10 A
NLPS22990, NLPS22990N
The NLPS22990 and NLPS22990N devices are 3.9 mW,
single−channel load switches with controlled and adjustable turn ons
and integrated PG indicators.
Each device is an N−channel MOSFET operating over an input
voltage range of 0.6 V to 5.5 V. The switch supports a maximum
continuous current of 10 A. 3.9 mW switch on resistance minimizes
both the voltage drop across the load switch and the power loss from
the load switch.
Controlled rise time of the device switch reduces inrush currents
caused by large bulk load capacitances, thereby reducing or
eliminating power supply droop. Adjustable slew rate through CT
provides the design flexibility to trade off inrush current and power up
timing requirements. Integrated PG indicator notifies the system about
the status of the load switch to facilitate seamless power sequencing.
The NLPS22990 has a 200−W On−chip resistor for quick discharge
of the output when switch is disabled. This avoids unknown state
caused by floating supply to the downstream load.
Features
•Integrated Single Channel Load Switch
•VBIAS Voltage Range: 2.5 V to 5.5 V
•VIN Voltage Range: 0.6 V to VBIAS
•On−Resistance
♦RON = 3.9 mW (typical) at VIN = 5 V (VBIAS = 5 V)
♦RON = 3.9 mW (typical) at VIN = 3.3 V (VBIAS = 3.3 V)
•10−A Maximum Continuous Switch Current
•Quiescent Current
♦IQ,VBIAS = 85 mA at VBIAS = 5 V
•Shutdown Current
♦ISD,VBIAS = 0.3 mA at VBIAS = 5 V
♦ISD,VIN = 1.3 mA at VBIAS = 5 V, VIN = 5 V
•Controlled and Adjustable Slew Rate through CT
•Power Good (PG) Indicator
•Quick Output Discharge (QOD) (NLPS22990 Only)
•3−mm x 2−mm WQFN 10−pin Package with Thermal Pad
•ESD Performance Tested per JESD 22
♦2 kV HBM and 1 kV CDM
Applications
•Notebooks, Chromebooks and Tablets
•Desktop PC and Industrial PC
•Solid State Drives (SSDs)
•Servers
•Telecom Systems
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22A = Specific Device Code
M = Date Code
G= Pb−Free Package
MARKING DIAGRAM
22AMG
G
(Note: Microdot may be in either location)
Device Package Shipping†
ORDERING INFORMATION
NLPS22990MN1TAG
WDFN10
(Pb−Free)
3000 / Tape
& Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN10
MN SUFFIX
CASE 511DX
NLPS22990NMN1TAG
(In development)
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Figure 1. Block Diagram
Figure 2. Typical Application Figure 3. On Resistance vs. Input Voltage
DRIVER
CHARGE
PUMP
NLPS22990 Only
CONTROL
LOGIC
VIN
CT
VBIAS
ON
VOUT
PG
GND
CLRL
RPU
CT
NLPS22990
CT
nc
VIN
VBIAS
ON
VOUT
VOUT
VOUT
PG
GND
CIN
Power
Supply
OFF
ON
DEVICE COMPARISON
Device RON at VBIAS = 5 V IMAX ENABLE QOD
NLPS22990 3.9 mW10 A Active High Yes
NLPS22990N 3.9 mW10 A Active High No
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1
2
3
4
5
7
6
VIN
(Thermal Pad ) 8
9
10
CT
nc
VIN
VBIAS
ON
VOUT
VOUT
VOUT
PG
GND
1
2
3
4
5
7
6
VIN
(Thermal Pad )
8
9
10 CT
nc
VIN
VBIAS
ON
VOUT
VOUT
VOUT
PG
GND
Figure 4. WDFN10 Pin Assignment
Table 1. PIN DESCRIPTIONS
Pin Name Pin Pin Type Description
CT 1 O VOUT slew rate control.
nc 2 −No connect.
VIN 3 I Switch input. Bypass this input with a ceramic capacitor to GND.
VBIAS 4 P Bias voltage. Power supply to the device.
ON 5 I Active high switch control input. Do not leave floating.
GND 6 GND Device ground.
PG 7 O Power good. Active high open−drain output. Tie to GND if not used.
VOUT 8OSwitch output.
9
10
VIN Thermal Pad ISwitch input. VIN and thermal pad (exposed center pad) to alleviate ther-
mal stress. See the layout section for layout guidelines.
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Table 2. MAXIMUM RATINGS
Symbol Rating Value Unit
VBIAS Bias Voltage −0.3 to +6 V
VIN Input Voltage −0.3 to +6 V
VOUT Output Voltage −0.3 to +6 V
VON ON Voltage −0.3 to +6 V
VPG PG Voltage −0.3 to +6 V
VCT CT Voltage −0.3 to +15 V
IMAX Continuous Switch Current at TJ = 125°C 10 A
IPLS Pulsed Switch Current, Pulse < 300 ms 2% Duty Cycle 12 A
VIN Digital Control Pin Voltage on EN, SEL −0.5 to VCC+0.5 V
TsStorage Temperature −65 to +150 °C
TLLead Temperature, 1 mm from Case for 10 seconds 300 °C
TJJunction Temperature 125 °C
MSL Moisture Sensitivity (Note 1) Level 1
ESD ESD Protection (Note 2) V
Human Body Model ±2000
Charged Device Model ±1000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
2. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114.
Charged Device Model (CDM) ±1000 V per JEDEC standard: JESD22−C101.
Table 3. RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VBIAS Bias Voltage 2.5 5.5 V
VIN Input Voltage 0.6 VBIAS V
VOUT Output Voltage VIN V
VON ON Voltage 0 5.5 V
VPG PG Voltage 0 5.5 V
CIN Input Capacitor (Note 3) 1mF
TAOperating Temperature Range −40 +105 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
3. See Application Information section.
Table 4. THERMAL INFORMATION
Symbol Parameter Value Unit
RqJA Junction to Ambient Thermal Resistance 51.4 °C/W
RqJC(top) Junction to Case (top) Thermal Resistance 65 °C/W
RqJB Junction to Board Thermal Resistance 17.4 °C/W
yJT Junction to Top Characterization Parameter 2.1 °C/W
yJB Junction to Bottom Characterization Parameter 17 °C/W
RqJC(bot) Junction to Case (bottom) Thermal Resistance 3.7 °C/W
4. See Application Information section.
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Table 5. DC ELECTRICAL CHARACTERISTICS (Typical values are at TA = +25⁰C, unless otherwise noted.)
Symbol Parameter Test Conditions VBIAS (V)
−40⁰C to 85⁰C−40⁰C to 105⁰C
Unit
Min Typ Max Min Max
ON PIN
VIH Input Voltage High 5, 3.3 1.0 −5.5 1.0 5.5 V
VIL Input Voltage Low 5, 3.3 0−0.5 0 0.5 V
VHYS Hysteresis Voltage 5−99 − − − mV
3.3 −128 − − −
ION,LKG Input Leakage Current 5, 3.3 − − 0.1 −0.1 mA
PG PIN
VOL Output Voltage Low VON = 0 V, IPG = 1 mA 5, 3.3 − − 0.2 −0.2 V
IPG,LKG Leakage Current into Pin VPG = 5 V 5, 3.3 − − 0.5 −0.5 mA
POWER SUPPLY AND OTHER CURRENTS
IQ,VBIAS VBIAS Quiescent Current IOUT = 0 A, mA
VIN = VON = 5 V 5−85 100 −100
VIN = VON = 3.3 V 3.3 −63 80 −80
ISD,VBIAS VBIAS Shutdown Current VON = 0 V, VOUT = 0 V 5−0.3 7 −7mA
3.3 −0.3 6 −7
ISD,VIN VIN Shutdown Current VON = 0 V, VOUT = 0 V, 5mA
VIN = 5 V −1.3 4 −10
VIN = 3.3 V −0.8 3 −7
VIN = 2.5 V −0.6 2 −5
VIN = 1.8 V −0.5 2 −4
VIN = 1.05 V −0.4 1 −3
VIN = 0.6 V −0.2 1 −2
VON = 0 V, VOUT = 0 V, 3.3 mA
VIN = 3.3 V −0.8 3 −7
VIN = 2.5 V −0.6 2 −5
VIN = 1.8 V −0.5 2 −4
VIN = 1.05 V −0.3 1 −3
VIN = 0.6 V −0.2 1 −2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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Table 6. LOAD SWITCH RESISTANCE (Typical values are at TA = +25⁰C, unless otherwise noted.)
Symbol Parameter Test Conditions VBIAS (V)
25⁰C
−40⁰C to
85⁰C
−40⁰C to
105⁰C
Unit
Min Typ Max Max Max
RON On−State
Resistance
VON = 5 V, IOUT = −200 mA 5mW
VIN = 5 V −3.9 4.8 5.7 6
VIN = 3.3 V −3.9 4.8 5.7 6
VIN = 2.5 V −3.9 4.8 5.7 6
VIN = 1.8 V −3.9 4.8 5.7 6
VIN = 1.05 V −3.9 4.8 5.7 6
VIN = 0.6 V −3.9 4.8 5.7 6
VON = 5 V, IOUT = −200 mA 3.3 mW
VIN = 3.3 V −3.9 4.8 5.7 6
VIN = 2.5 V −3.9 4.8 5.7 6
VIN = 1.8 V −3.9 4.8 5.7 6
VIN = 1.05 V −3.9 4.8 5.7 6
VIN = 0.6 V −3.9 4.8 5.7 6
Table 7. OUTPUT PULL−DOWN RESISTANCE (NLPS22990 Only) (Typical values are at TA = +25⁰C, unless otherwise noted.)
Symbol Parameter Test Conditions VBIAS (V)
−40⁰C to 105⁰C
Unit
Min Typ Max
RPD Output Pulldown
Resistance
VON = 0 V, VIN = VOUT = 5 V 5−197 280 W
VON = 0 V, VIN = VOUT = 3.3 V 3.3 −204 280
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Table 8. SWITCHING CHARACTERISTICS (Typical values are at TA = +25⁰C, unless otherwise noted.)
Symbol
4
Parameter Test Conditions VBIAS (V) Min Typ Max Unit
tON Turn−On Time VIN = 5 V, VON = VBIAS,
RL = 10 W, CL = 0.1 mF, CT = 0 pF,
RPU = 10 kW, CIN = 1 mF
5−24 −ms
tOFF Turn−Off Time −6−
tRVOUT Rise Time −31 −
tFVOUT Fall Time −2.9 −
tDON Delay Time −13 −
tPG,ON PG Turn−On Time −119 −
tPG,OFF PG Turn−Off Time −0.15 −
tON Turn−On Time VIN = 1.05 V, VON = VBIAS,
RL = 10 W, CL = 0.1 mF, CT = 0 pF,
RPU = 10 kW, CIN = 1 mF
5−23 −ms
tOFF Turn−Off Time −12 −
tRVOUT Rise Time −16 −
tFVOUT Fall Time −4.0 −
tDON Delay Time −16 −
tPG,ON PG Turn−On Time −97 −
tPG,OFF PG Turn−Off Time −0.15 −
tON Turn−On Time VIN = 0.6 V, VON = VBIAS,
RL = 10 W, CL = 0.1 mF, CT = 0 pF,
RPU = 10 kW, CIN = 1 mF
5−24 −ms
tOFF Turn−Off Time −13.5 −
tRVOUT Rise Time −11.7 −
tFVOUT Fall Time −3.8 −
tDON Delay Time −18 −
tPG,ON PG Turn−On Time −95 −
tPG,OFF PG Turn−Off Time −0.15 −
tON Turn−On Time VIN = 3.3 V, VON = 5 V,
RL = 10 W, CL = 0.1 mF, CT = 0 pF,
RPU = 10 kW, CIN = 1 mF
3.3 −29 −ms
tOFF Turn−Off Time −7.4 −
tRVOUT Rise Time −29 −
tFVOUT Fall Time −3.3 −
tDON Delay Time −18 −
tPG,ON PG Turn−On Time −112 −
tPG,OFF PG Turn−Off Time −0.21 −
tON Turn−On Time VIN = 1.05 V, VON = 5 V,
RL = 10 W, CL = 0.1 mF, CT = 0 pF,
RPU = 10 kW, CIN = 1 mF
3.3 −30 −ms
tOFF Turn−Off Time −11 −
tRVOUT Rise Time −18.5 −
tFVOUT Fall Time −4.0 −
tDON Delay Time −22 −
tPG,ON PG Turn−On Time −101 −
tPG,OFF PG Turn−Off Time −0.21 −
tON Turn−On Time VIN = 0.6 V, VON = 5 V,
RL = 10 W, CL = 0.1 mF, CT = 0 pF,
RPU = 10 kW, CIN = 1 mF
3.3 −31 −ms
tOFF Turn−Off Time −13 −
tRVOUT Rise Time −14 −
tFVOUT Fall Time −3.8 −
tDON Delay Time −25 −
tPG,ON PG Turn−On Time −99 −
tPG,OFF PG Turn−Off Time −0.21 −
5. Turn−off time and fall time are dependent on the time constant at the load. For NLPS22990N, there is no QOD. The time constant is RL×CL.
For NLPS22990, internal pull down RPD is enabled when the switch is disabled. The time constant is (RPD//RL)×CL.
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Typical Characteristics
VON = 5 V, IOUT = 0 A,VIN = VBIAS
Figure 5. Quiescent Current vs. Bias Voltage
VON = 0 V, VOUT = 0 V,VIN = VBIAS
Figure 6. Bias Shutdown Current vs. Bias Voltage
VON = 5 V, VBIAS = 3.3 V, IOUT = -200 mA VON = 5 V, VBIAS = 5 V, IOUT = -200 mA
VON = 0 V, VBIAS = 3.3 V,VOUT = 0 V VON = 0 V, VBIAS = 5 V,VOUT = 0 V
Figure 7. Input Shutdown Current vs. Input
Voltage
Figure 8. Input Shutdown Current vs. Input
Voltage
Figure 9. On−Resistance vs. Ambient Temperature Figure 10. On−Resistance vs. Ambient
Temperature
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Typical Characteristics
Figure 11. On−Resistance vs. Input Voltage Figure 12. On−Resistance vs. Input Voltage
Figure 13. Output Pull−Down Resistance
vs. Bias Voltage
Figure 14. High−Level Input Voltage
vs. Bias Voltage
Figure 15. Low−Level Input Voltage
vs. Bias Voltage
Figure 16. Hysteresis vs. Bias Voltage
VON = 5 V, VBIAS = 3.3 V, IOUT = -200 mA VON = 5 V, VBIAS = 5 V, IOUT = -200 mA
VON = 0 V, VOUT = VIN = 1.05 V IOUT = 0 A
IOUT = 0 A IOUT = 0 A
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Typical Characteristics
Figure 17. Turn−on Time vs. Input Voltage Figure 18. Turn−on Time vs. Input Voltage
Figure 19. Turn−off Time vs. Input Voltage Figure 20. Turn−off Time vs. Input Voltage
Figure 21. Rise Time vs. Input Voltage Figure 22. Rise Time vs. Input Voltage
VBIAS = 3.3 V, VON = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VON = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 3.3 V, VON = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VON = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 3.3 V, VON = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VON = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
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Typical Characteristics
Figure 23. Fall Time vs. Input Voltage Figure 24. Fall Time vs. Input Voltage
Figure 25. PG Turn−on Time vs. Input Voltage Figure 26. PG Turn−on Time vs. Input Voltage
Figure 27. PG Turn−off vs. Input Voltage Figure 28. PG Turn−off Time vs. Input Voltage
VBIAS = 3.3 V, VON = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VON = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 3.3 V, VON = 5 V, CT = 0 pF,
RPU = 10 kW, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VON = 5 V, CT = 0 pF,
RPU = 10 kW, CL = 0.1 mF, RL = 10 W
VBIAS = 3.3 V, VON = 5 V, CT = 0 pF,
RPU = 10 kW, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VON = 5 V, CT = 0 pF,
RPU = 10 kW, CL = 0.1 mF, RL = 10 W
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Typical Characteristics
Figure 29. Rise Time vs. Input Voltage Figure 30. Turn−on Response
Figure 31. Turn−on Response Figure 32. Turn−on Response
Figure 33. Turn−on Response Figure 34. Turn−on Response
TA = 25 ⁰C, CL = 0.1 mF, CT = 0 pF,
CIN = 1 mF, RL = 10 W
VBIAS = 5 V, VIN = 1.05 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VIN = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 3.3 V, VIN = 1.05 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 3.3 V, VIN = 3.3 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VIN = 1.05 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
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Typical Characteristics
Figure 35. Turn−off Response Figure 36. Turn−off Response
Figure 37. Turn−off Response
VBIAS = 3.3 V, VIN = 3.3 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 5 V, VIN = 5 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
VBIAS = 3.3 V, VIN = 1.05 V, CT = 0 pF,
CIN = 1 mF, CL = 0.1 mF, RL = 10 W
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Parameter Measurement Information
Figure 38. Timing Test Circuit
CLRL
RPU
CT
NLPS22990
CT
nc
VIN
VBIAS
ON
VOUT
VOUT
VOUT
PG
GND
CIN Power
Supply
Power
Supply
OFF
ON
Figure 39. Timing Waveforms
50 %
90 %
10 %
50 %
50 % 50 %
10 %
50 %
90 %
50 %
tON
tDtR
tPG ,ON
tOFF
tF
tPG ,OFF
VON
VOUT
VPG
Rise/fall time of the control signals is 100 ns.
0n and (){f Conlml Ad able RisC Time
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Detailed Description
Overview
The NLPS22990 / NLPS22990N device is a single
channel load switch with controlled adjustable turn−on time
and an integrated PG indicator. The device contains an
N−channel MOSFET that can operate over an input voltage
range of 0.6 V to 5.5 V and can support a maximum
continuous current of 10 A. The wide input voltage range
and high current capability enable this device to be used
across multiple designs and end equipment. The
on−resistance of 3.9−mW minimizes the voltage drop across
the load switch and the power loss due to the load switch.
The controlled rise time for the device greatly reduces
inrush current caused by large bulk load capacitances,
thereby reducing or eliminating power supply droop.
Adjustable slew rate through the CT pin provides design
flexibility in trading off inrush current and power up timing
requirements. The integrated PG indicator notifies the
system about the status of the load switch to facilitate
seamless power sequencing. During shutdown, the device
has very low leakage current, thereby reducing unnecessary
leakages for downstream modules during standby. The
NLPS22990 features an internal 200−W resistor for quick
discharge of the output when switch is disabled. The
NLPS22990N does not have this quick output discharge
feature.
Figure 40. Functional Block Diagram
DRIVER
CHARGE
PUMP
NLPS22990 Only
CONTROL
LOGIC
VIN
CT
VBIAS
ON
VOUT
PG
GND
Feature Description
On and Off Control
The ON pin controls the state of the load switch. Asserting
the pin high enables the switch. The minimum voltage that
guarantees logic high is 1.0 V. This pin cannot be left floating
and must be tied either high or low for proper functionality.
Adjustable Rise Time
The NLPS22990 / NLPS22990N features adjustable rise
time for inrush current control. A capacitor to GND on the
CT pin adjusts the rise time. Without any capacitor on the
CT, the rise time is at its minimum for fastest timing. The
voltage on the CT pin can be as high as 15 V; therefore the
minimum voltage rating for the CT capacitor must be 25 V
for optimal performance. An approximate equation for the
relationship between CT, VIN and rise time when VBIAS is
set to 5 V is shown in Equation 1. As shown in Figure 39, rise
time is defined as from 10% to 90% measurement on VOUT.
tR+(0.0058 VIN )0.0005) CT)5.4 VIN )2.8
(eq. 1)
where
•tR is the rise time (in ms)
•VIN is the input voltage (in V)
•CT is the capacitance value on the CT pin (in pF)
Table 9 contains rise time values measured on a typical
device. Rise times shown below are only valid for the
power−up sequence where VIN and VBIAS are already in
steady state condition before the ON pin is asserted high.
Table 9. RISE TIME VS. CT CAPACITOR
Rise Time (ms) at 25°C, CL = 0.1 uF, CIN = 1 uF, RL = 10 W, VBIAS = 5 V
CT (pF) VIN = 5 V VIN = 3.3 V VIN = 1.8 V VIN = 1.05 V VIN = 0.6 V
0 26.4 23.5 19.6 14.2 10.7
220 30.5 26.2 21.4 14.6 11.0
470 36.6 29.4 21.7 16.0 12.2
1000 52.9 40.6 28.1 20.7 14.9
2200 86.6 63.7 41.7 29.0 20.1
4700 160.5 112.0 70.6 46.9 32.7
10000 310.8 214.1 130.4 84.0 56.4
PG. ‘c ()D NLP5229UUOIIIV
NLPS22990, NLPS22990N
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16
Power Good (PG)
The NLPS22990 / NLPS22990N has a power good (PG)
output signal used to indicate that the gate of the pass FET
is driven high, and that the switch is on with On−resistance
close to its final value (full load ready). PG is an active high
open−drain output which can be connected to a voltage
source through an external pull up resistor, RPU. This
voltage source can be VOUT from the NLPS22990 /
NLPS22990N or another external voltage. VBIAS is required
for PG to have a valid output. Equation 2 shows the
approximate equation for the relationship between CT, VIN
and PG turn−on time (tPG,ON) when VBIAS is set to 5 V.
tPG
,
ON +(0.0083 VIN )0.023) CT)4.4 VIN )85
(eq. 2)
where
•tPG,ON is the PG turn−on time (in ms)
•VIN is the input voltage (in V)
•CT is the capacitance value on the CT pin (in pF)
Table 10 contains PG turn−on time values measured on a
typical device.
Table 10. PG TURN−ON TIME VS. CT CAPACITOR
Typical PG Turn−on Time (ms) at 25°C
CL = 0.1 uF, CIN = 1 uF, RL = 10 W, VBIAS = 5 V
CT (pF) VIN = 5 V VIN = 3.3 V VIN = 1.8 V VIN = 1.05 V VIN = 0.6 V
0 110.86 101.19 95.5 92.01 91.68
220 125.05 112.49 104.0 99.84 97.7
470 140.84 125.02 114.01 108.67 104.53
1000 174.71 151.86 134.84 126.33 120.87
2200 249.15 210.8 179.5 164.72 155.37
4700 408.76 335.95 276.0 246.93 229.46
10000 734.93 594.64 474.98 415.5 380.43
Quick Output Discharge (QOD) (NLPS22990 Only)
The NLPS22990 includes a QOD feature. When the
switch is disabled, a discharge resistor is connected between
VOUT and GND. This resistor has a typical value of 200 W
and prevents the output from floating while the switch is
disabled.
The NLPS22990N does not have this feature.
Device Functional Modes
Table 11 shows the function table for NLPS22990.
Table 11. FUNCTION TABLE
ON VIN to VOUT OUTPUT DISCHARGE (Note 6)
L OFF ENABLED
H ON DISABLED
6. This feature is in the NLPS22990 only (not in NLPS22990N).
Input to Olllpul Volt gc Drop Thermal Con d on om
NLPS22990, NLPS22990N
www.onsemi.com
17
Application and Implementation
Application Information
Input to Output Voltage Drop
The input to output voltage drop in the device is
determined by the RON of the device and the load current.
The RON of the device depends upon the VIN and VBIAS
conditions of the device. See the RON specifications in the
Resistance Characteristics table of this datasheet. Once the
RON of the device is determined based upon the VIN and
VBIAS conditions, use Equation 3 to calculate the input to
output voltage drop.
DV+ILOAD RON (eq. 3)
where
•DV is the voltage drop from VIN to VOUT
•ILOAD is the load current
•RON is the on−resistance of the device for a specific
VIN and VBIAS
•An appropriate ILOAD must be chosen such that the
IMAX specification of the device is not violated
Input Capacitor
The use of a capacitor between VIN and GND close to
these pins is recommended. This helps limit the voltage drop
on the input supply caused by transient inrush currents into
a discharged capacitor at the load when the switch is turned
on. A 1−mF ceramic capacitor, CIN, is usually sufficient.
Higher values of CIN can be used to further reduce the
voltage drop. A CIN to CL ratio of 10 to 1 is recommended
for minimizing VIN dip caused by inrush currents during
startup. CL refers to the load capacitance.
Thermal Consideration
The maximum junction temperature should be limited
below 125°C. Use Equation 4 to calculate the maximum
allowable dissipation, PD(max) for a given output load
current and ambient temperature. RqJA is highly dependent
upon board layout.
PD(max) +
TJ(max) *TA
RqJA
(eq. 4)
where
•PD(max) is the maximum allowable power dissipation
•TJ(max) is the maximum allowable junction temperature
•TA is the ambient temperature
•RqJA is the junction−to−air thermal impedance
PG Pull Up Resistor
PG is an open−drain output which should be connected to
a voltage source through a pull up resistor RPU. The PG
signal can be used to drive the enable pins of downstream
devices, EN. PG is active high, and its voltage is given by
Equation 5.
VPG +VOUT *(IPG,LK )IEN,LK) RPU (eq. 5)
where
•VOUT is the voltage where PG is tied to
•IPG,LK is the leakage current into PG pin
•IEN,LK is the leakage current into the EN pin driven by
PG
•RPU is the pull up resistance
VPG needs to be higher than VIH,MIN of the EN pin to be
interpreted as a valid logic high. The maximum RPU is
determined by Equation 6.
RPU,MAX +
VOUT *VIH,MIN
IPG,LK )IEN,LK
(eq. 6)
When PG is disabled, a 1 mA current into PG pin (IPG =
1 mA) produces a VPG,OL of less than 0.2 V. This VPG,OL
will be interpreted as a valid logic low as long as VIL,MAX
of the EN pin is greater than 0.2 V. The minimum RPU is
determined by Equation 7.
(eq. 7)
RPU,MIN +
VOUT
IPG )IEN,LK
RPU can be chosen within the range defined by RPU,MIN
and RPU,MAX. RPU = 10 kW is used for characterization.
Powcr Sct ucncin ' \I /| ”J HP www.cnsemi.com .J
NLPS22990, NLPS22990N
www.onsemi.com
18
Power Sequencing
The NLPS22990 / NLPS22990N has an integrated power
good indicator which can be used for power sequencing. As
shown in Figure 41, the switch to the second load is
controlled by the PG signal from the first switch. This
ensures that the power to load 2 is only enabled after the
power to load 1 is enabled and the first switch is full−load
ready.
Figure 41. Power Sequencing
RPU
CT
NLPS22990
CT
nc
VIN
VBIAS
ON
VOUT
VOUT
VOUT
PG
GND
CIN Power
Supply
Power
Supply 1
RPU
CT
NLPS22990
CT
nc
VIN
VBIAS
ON
VOUT
VOUT
VOUT
PG
GND
CIN
Power
Supply 2
MCU
Load 1
Load 2
GPIO
NLPS22990, NLPS22990N
www.onsemi.com
19
Standby Power Reduction
Any end equipment that is powered by a battery sees the
need to reduce current consumption in order to maintain the
battery charge for a longer time. The NLPS22990 /
NLPS22990 devices help to accomplish this reduction by
turning off the supply to the downstream modules that are in
standby state. Turning off the supply significantly reduces
the leakage current overhead of the standby modules as
shown in Figure 42.
Figure 42. Standby Power Reduction
CT
NLPS22990
CT
nc
VIN
VBIAS
ON
VOUT
VOUT
VOUT
PG
GND
CIN Power
Supply
Power
Supply 1
MCU
Standby
Module
Always ON
Module
GPIO
Power Supply Recommendations
The device is designed to operate with a VBIAS range of
2.5 V to 5.5 V, and a VIN range of 0.6 V to VBIAS. The supply
must be well regulated and placed as close to the device
terminal as possible with the recommended 1−mF bypass
capacitor. If the supply is located more than a few inches
from the device terminals, additional bulk capacitance may
be required in addition to the ceramic bypass capacitors. In
the case where the power supply is slow to respond to a large
load current step, additional bulk may also be required. If
additional bulk capacitance is required, an electrolytic,
tantalum, or ceramic capacitor of 10 mF may be sufficient.
IO ,s ‘a www.0numl.oom
NLPS22990, NLPS22990N
www.onsemi.com
20
Layout
Layout Guidelines
For best performance, all traces must be as short as
possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the
effects that parasitic trace inductances may have on normal
operation. Using wide traces for VIN, VOUT, and GND helps
minimize the parasitic electrical effects. The CT trace must
be as short as possible to reduce parasitic capacitance.
Figure 43. Layout Example
1
2
3
4
5
7
6
VIN
(Thermal Pad )
8
9
10
CT
nc
VIN
VBIAS
ON
VOUT
VOUT
VOUT
PG
GND
RPU
To GPIO Control
VIN
Bypass Capacitor
VOUT
Bypass
Capacitor
CT
Capacitor
VBIAS
Bypass
Capacitor
VIA to Power Ground Plane
VIA to VIN Plane
PIN EINE REFERENCE TDF’ VIEW DETAIL 1a // 0.10 c \ D DDS C NDYE 4 SIDE VIEW D2 E2 10 DETAIL A 1 FBDTTDM VIEW 0 MILLIMETERS JI—l DIM MIN. NEIM. MAX. A 0.70 0.75 0.30 A1 0.00 - 0.05 3X b1—J L— :3 019 02:2:EF 029 DETAIL A ‘ ‘ ' I01 023 0.29 0.33 0 290 3.00 310 02 250 2.60 2.70 E 1.90 2.00 210 E2 100 1.10 1.20 $5352: a 050 list DETAIL B 91 05s as: F 058 REF 10X '- k 0.15 REF 5 I L 0.25 | 0.30 I 0.35 L1 0.125 REF 0" Semiwndudw" m NEITEST 1. DIMENSIEINING AND TEILERANCING PER AsME v14.5M. 1954. 2. CDNTREILLING DIMENSIEINI MILLIMETERS 3 DIMENSIEIN b, bl AND b2 APPLIES Tu THE PLATED TERMINALS AND IS MEASURED BETUEEN 010 AND 0.20m FRuM THE TERMINAL TIP. 4. PRuFILE APPLIES TEI THE EXPDSED PAD AS WELL AS THE TERMINALS. 2.70 1.50 h 1.20 2.30 A l 0'504L-I a} L7x 0.30 PITCH RECDMMENDED MDUNTING FEIEITPRINT - ran nddmamfl lnFornn‘lun an nun Phrrree strntpgy and samanmg menus, Mensa uaanmau the [IN SenIzundchr Sumenmg and Mounting TEcHanuzs RzFerencE Munum, suLnERRM/n. ON SemTcunduclm and ngms a1 amers are Mademavks a1 SemTcanducluT Campunenls lnduslnes LLC dba ON SemTcanduclaT aT 1K5 saasmanas 1n xna Umled sxaxas andJnT mhev commas ON SemTcunduclaT Tesewes The th‘ To make changes wuhum Yunhev noche To any amauns hevem ON SemTLunduc‘nT makes m7 wavvamy represenlalmn m guarantee Tegardmg ma smawmy a1 1V5 manuals can any pamcu‘av purpase nnT aaas ON Semumnduclm assume any Mammy ansmg um a1 xna apphcahan m use 00 any pmduclnv c1Tcu1| and saaamcauy msaTanns any and a1 Mammy mcmdmg w1|hw| hmms‘mn spema‘ aansaaaannaT m mudemaI damages ON Sermmnduclar dues nnl convey any hcense under 115 pa|em thls nar xna
WDFN10 3.0x2.0, 0.5P
CASE 511DX
ISSUE A
DATE 15 NOV 2018
SCALE 4:1
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
XXXMG
G
(Note: Microdot may be in either location)
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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