SMC Diode Solutions 的 SST137 Series 规格书

/—\ *SME DlDDE SDLuTlUNS RuHS ® 2 6(3) o 1 1 o 2 3 3 T1(1)07 T2(2) To-zzoc DPAK With SST137 series triacs with low holding and latching current are especially recommended [or use on middle and Characteristics Condltlon RMS onrstate current Non repetitive surge peak onrstate current full a tie F:50HZ .China - Germany — Korea - Singapore - United States-
Technical Data
Data Sheet N2042, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SST137C-600E
SST137K-600E
SST137K-800E
SST137 Series 8A TRIACs
Circuit Diagram
Description
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Storage junction temperature range
Tstg
-
-40-150
Operating junction temperature range
Tj
-
-40-125
Repetitive peak off-state voltage(Tj=25℃)
VDRM
-
600/800
Repetitive peak reverse voltage(Tj=25℃)
VRRM
-
600/800
Non repetitive surge peak Off-state voltage
VDSM
-
VDRM + 100
Non repetitive peak reverse voltage
VRSM
-
VRRM + 100
RMS on-state current
I(TRMS)
DPAK/TO-220C(TC=103℃)
8
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
ITSM
-
65
I2t value for fusing (tp=10ms)
I2t
-
21
Critical rate of rise of on-state current
(IG=2×IGT)
dI/dt
Ⅰ-Ⅱ-Ⅲ
2
Ⅳ
50
Peak gate current
IGM
-
10
Average gate power dissipation
PGM
-
0.5
Peak gate power
PG(AV)
-
5
With SST137 series triacs with low holding and latching current are especially recommended for use on middle and
small resistance type power load.From all three terminals to external heatsink.
TO-220C
DPAK
man: sDLuTiUNs RuHS ® Condiiion ‘ Tj:25 Symbol Condition Value Units SMC Diode Solution Triacs E:I S 10mA| S 25mA Ir(RM5):8A CzTO-ZZOC 600:VDRM/V 2 500V KzDPAK Device Package Shipping SST1370600E SST137K7600/800E SST137K7600/800ETR .China - Germany - Korea - Singapore - United States-
Technical Data
Data Sheet N2042, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SST137C-600E
SST137K-600E
SST137K-800E
Symbol
Test Condition
Quadrant
Value
Unit
D
E
F
G
IGT
VD=12V RL=30Ω
Ⅰ-Ⅱ-Ⅲ
MAX
5
10
25
50
mA
Ⅳ
10
25
70
100
VGT
ALL
MAX
1.3
V
VGD
VD=VDRM Tj=125℃RL=3.3KΩ
ALL
MIN
0.2
V
IL
IG=1.2IGT
Ⅰ-Ⅲ
MAX
10
20
50
70
mA
Ⅱ-Ⅳ
20
30
70
100
IH
IT=100mA
MAX
10
15
40
60
mA
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
MIN
20
50
50
200
V/μs
Electrical Characteristics(Tj=25℃unless otherwise specified)
Static Characteristics
Symbol
Condition
Max.
Units
VTM
IT=10A tp=380μs,Tj=25℃
1.6
V
IDRM
VD=VDRM VR=VRRM, Tj=25℃
5
μA
IRRM
VD=VDRM VR=VRRM, Tj=125℃
1
mA
Thermal Resistances
Symbol
Condition
Value
Units
Rth(j-c)
Junction to case(AC)
TO-220C
1.8
℃/W
DPAK
2.1
Ordering Information
Device
Package
Shipping
SST137C-600E
TO-220C
50pcs/ Tube
SST137K-600/800E
DPAK
2500pcs/ Reel
SST137K-600/800ETR
DPAK
2500pcs/ Reel
S ST 137 C -600 E
SMC Diode Solutions
Triacs
E:IGT1-3 ≤ 10mA IGT4 ≤ 25mA
600:VDRM/VRRM ≥ 600V
800:VDRM/VRRM ≥ 800V
IT(RMS):8A
C:TO-220C
K:DPAK
/—\ *SMIE D155: SDLU'HUNS HuHS 501 Where xxxxx 15 WWWL 557137: .5005 A 4.40 4.60 0.173 0181 B 0.70 0.90 0.028 0 035 c 0.45 0.60 0.018 0 024 5 02 1.23 1.32 0.048 0 052 ca 2.20 2.60 0.087 0 102 E 9.90 10.3 0.39 0 406 I F 6.30 6.90 0.248 0 272 :U11111 ‘33 G 2.54 0.1 1 1 L2 1 1 1 L1 3.39 0.133 1 1 1 L2 1.14 1.70 0.045 0087 a c L3 2.65 2.95 0.104 0116 G 6 3.6 0.142 Mechanical Dimensions DPAK E A 52 C1 W 1 41 1: T ‘1 A 2.10 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.68 0.86 0.026 0.034 32 5.18 5.48 0.202 0.216 c 0.40 0.60 0.016 0.024 02 0.44 0.58 0.017 0.023 D1 5 30REF 0.209REF E 8.40 8.80 0.252 0.268 E1 4.63 0.182 G 4.47 4.67 0.176 0.184 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 1 L1: 1 7 v1 7 7 111 1 111 v2 0 1 1 6 0 1 1 8 .China - Germany — Korea - Singapore - United States-
Technical Data
Data Sheet N2042, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SST137C-600E
SST137K-600E
SST137K-800E
Marking Diagram
Mechanical Dimensions TO-220C
SYMBOL
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.40
4.60
0.173
0.181
B
0.70
0.90
0.028
0.035
C
0.45
0.60
0.018
0.024
C2
1.23
1.32
0.048
0.052
C3
2.20
2.60
0.087
0.102
D
8.90
9.90
0.350
0.390
E
9.90
10.3
0.39
0.406
F
6.30
6.90
0.248
0.272
G
2.54
0.1
H
28.0
29.8
1.102
1.173
L1
3.39
0.133
L2
1.14
1.70
0.045
0.067
L3
2.65
2.95
0.104
0.116
ϕ
3.6
0.142
Mechanical Dimensions DPAK
SYMBOL
Millimeters
Inches
Min.
Typ.
Max.
Min.
Typ.
Max.
A
2.10
2.50
0.083
0.098
A2
0
0.10
0
0.004
B
0.66
0.86
0.026
0.034
B2
5.18
5.48
0.202
0.216
C
0.40
0.60
0.016
0.024
C2
0.44
0.58
0.017
0.023
D
5.90
6.30
0.232
0.248
D1
5.30REF
0.209REF
E
6.40
6.80
0.252
0.268
E1
4.63
0.182
G
4.47
4.67
0.176
0.184
H
9.50
10.70
0.374
0.421
L
1.09
1.21
0.043
0.048
L2
1.35
1.65
0.053
0.065
V1
7°
7°
V2
0°
6°
0°
6°
Where XXXXX is YYWWL
SST137C-600E = Part name
SST137K-600E = Part name
YY = Year
WW = Week
L = Lot Number
/—\ ‘ME man: sDLu'HUNs RuHS ® gs and Characteristics Curves .China - Germany - Korea - Singapore - United States-
Technical Data
Data Sheet N2042, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SST137C-600E
SST137K-600E
SST137K-800E
FIG.3: Surge peak on-state current versus
number of cycles
FIG.1: Maximum power dissipation versus RMS
on-state current
FIG.4: On-state characteristics (maximum
values)
FIG.2: RMS on-state current versus case
temperature
IT(RMS) (A)
P(w)
0 2 4 6 8 10
0
5
IT(RMS) (A) Tc (℃)
0
2
4
6
12
0 25 50 75 100 125
1 10 100 1000
Number of cycles
0
10
20
30
40
ITSM (A) ITM (A)
VTM (V)
0 1 2 3 4 5
1
10
70
Tj=25℃
8
10
50
60
70
15
TO-220C/
DPAK
Tj=Tjmax
10
t=20ms
One cycle
α=180°
→
FIG.6: Relative variations of gate trigger current
versus junction temperature
FIG.5: Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<20ms, and
corresponging value of I t (Ⅰ-Ⅱ-Ⅲ:dI/dt < 50A/μs;
Ⅳ:dI/dt < 10A/μs)
tp(ms)
0.01 0.1 1 10 20
10
100
1000
ITSM (A), I t (A s)
-40 -20 0 20 40 60 80 100 120 140
IGT(Tj) /IGT(Tj=25℃)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
22
2
IGT4
I t
2IGT3
IGT1
IGT2
Tj (℃)
ITSM
dI/dt(Ⅰ-Ⅱ-Ⅲ)
dI/dt(Ⅳ)
Ratings and Characteristics Curves
/—\ JMIDI man: SDLUT‘UNS HuHS DISCLAIMER: .China - Germany — Korea - Singapore - United States-
Technical Data
Data Sheet N2042, Rev.-
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
SST137C-600E
SST137K-600E
SST137K-800E
FIG.7: Relative variations of holding current
versus junction temperature
-40 -20 0 20 40 60 80 100 120 140
IH(Tj) /IH(Tj=25℃)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
IH
FIG.8: Relative variations of latching current
versus junction temperature
IL(Tj) /IL(Tj=25℃)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
IL
-40 -20 0 20 40 60 80 100 120 140
Tj (℃) Tj (℃)
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC Diode Solutions be liable for any damages that may result from an accident or any other cause during operation
of the user’s units according to the datasheet(s). SMC Diode Solution assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall SMC Diode Solutions be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC Diode Solutions.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
Diode Solutions.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..