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L“ mneon

Sense & Control

User’s Manual

Rev. 1.3, 2018-02

TLE4998

Configuration and Calibration of Linear Hall Sensor

Edition 2018-02

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

TLE4998

User’s Manual

Table of Contents

User’s Manual 3 Rev. 1.3, 2018-02

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1Scope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2 TLE4998 Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 TLE4998 Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3.1 Programmer Connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3.2 Programming Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.2.1 Communication Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.2.2 Command Frame . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3.2.3 Data Frame . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3.2.4 Interface Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3.3 Register Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

3.4 EEPROM Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3.5 Programming Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3.5.1 Readout of the EEPROM Content . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

3.5.2 Setting the EEPROM Content . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.5.3 Calculation of Bits to Erase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.5.4 Calculation of Bits to Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.5.5 Margin Voltage Check . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

4 Configuration & Calibration Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.1 Magnetic Field Range - R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.2 Gain Setting - G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.3 Offset Setting - OS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

4.4 Low-Pass Filter - LP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

4.5 Clamping - CH, CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

4.6 Interface Timing Setup - Prediv . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

4.7 SENT/SPC Frame Settings - F . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

4.8 SPC Trigger Mode - Prot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

4.9 Temperature Compensation - TL, TQ & TT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

5 SENT/SPC Checksum Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

6 Calibration of TLE4998 Temperature Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

6.1 Integrated Temperature Polynomial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

6.2 Application Sensitivity Polynomial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

6.3 Determination of Sensitivity Polynomial from Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

6.4 Calculation of Final Temperature Compensation Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

6.4.1 Algorithm for Finding the Optimum Temperature Coefficient Set . . . . . . . . . . . . . . . . . . . . . . . . . . 29

6.4.2 Example Implementation Code for Temperature Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

6.5 Usage of Infineon’s Temperature Calibration Tool . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

7 Calibration of TLE4998 Output Characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

7.1 Two-Point Calibration Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

7.2 Two-Point Calibration Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

7.2.1 Calibration with Application Readout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

7.2.2 Calibration without Application Readout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Table of Contents

TLE4998

User’s Manual

Scope

User’s Manual 4 Rev. 1.3, 2018-02

1Scope

This document is valid for all TLE4998 variants and derivates. It gives a detailed description of the configuration

and calibration procedure, which is recommended to configure the TLE4998 for optimum accuracy in a sensing

application.

2 TLE4998 Signal Processing

The TLE4998 uses a full digital signal processing concept. Analog values from the Hall probe are directly

converted to raw digital signals by the Hall ADC and then compensated and processed in the digital signal

processing unit (DSP) using configuration parameters stored in the EEPROM, temperature data acquired by an

integrated temperature sensor and stress data acquired by an integrated stress sensor. A configurable second-

order temperature polynomial is implemented to compensate the thermal reduction of the remanent magnetic flux

of a permanent magnet used in a position sensing application. Additionally, an application-specific output

characteristic can be set by configuring the EEPROM parameters Gain and Offset.

Figure 2-1 Signal Flow Diagram of the TLE4998

Figure 2-1 shows the signal flow diagram for temperature compensation and output characteristic in the DSP, and

the influence of the relevant configuration parameters stored in the EEPROM. The Hall signal is processed in the

following sequence of steps:

1. The analog Hall signal is converted by the Hall ADC, which operates at the configured magnetic range setting.

2. The digital value is filtered by a digital low-pass filter, which operates at a configurable filter frequency given

by the “LP filter”-setting. The output of the filter is stored in the HADC register.

3. The HADC value is multiplied by the temperature compensation polynomial. The first order (TL) and second

order (TQ) coefficients of the polynomial are configurable. The third order coefficient (TT) is fixed.

4. The value is multiplied by the stress compensation coefficient and the result is stored in the HCAL register.

The integrated stress compensation is pre-configured by Infineon and does not require any user adaption.

5. The HCAL value is multiplied by the configured gain value.

6. The configured offset value is added to the HCAL value.

7. The digital Hall value is clamped according to the configured upper and lower clamping limits. The output value

of the clamping stage is stored in the DOUT register.

8. An output protocol is generated from the resulting DOUT value and transmitted on the OUT pin.

Stored in

EEPROM

Memory

Hall

Sensor

Limiter

(C l am p)

Out

Range LP

Protocol

Generation

Offset

Gain

Stress

Sensor

Clamping Low

Clamping High

Temperature

Compensation

TADC TCAL

Temperature

Sensor

Norm-

alize T-Polynomial

HADC

HCAL

DOUT

Stress

Comp.

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3 TLE4998 Programming

3.1 Programmer Connection

Figure 3-1 shows the connection of the TLE4998 to a programmer. The pins VDD and OUT of the sensor IC are

used for the digital programming interface as described in Table 3-1 (See datasheet of corresponding TLE4998

type for pinout).

Note: It is possible to sequentially program multiple sensors that share the same supply voltage connection, as

long as they do not share the same OUT connection as well.

Figure 3-1 Connection of TLE4998 to Programmer

Table 3-1 Pin Functions for Programming Interface

Pin Programming Function

TST Test pin (no functionality, connection to GND is recommended)

VDD Programming interface clock

GND Ground

OUT Programming interface data I/O and V

optional

VDD

I/O 1

I/O 2

GND

47n

4n7

47n

4n7

PROGRAMMER

TLE

4998x

OUT

VDD

GND

application module

TLE

4998x

OUT

VDD

GND

2k2

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3.2 Programming Interface

3.2.1 Communication Scheme

The digital programming interface uses specific frames, which can have one of the two following functions:

• Command frames contain a specific task (e.g. read/write data, select EEPROM programming etc.) and a

corresponding address

• Data frames contain a 16 bit data value sent to or received from the device - these frames can only follow a

proper command frame for reading or writing data

A valid frame has the following properties:

• A frame consists of 21 bits in total

• A bit is shifted in or out via the output line with a rising clock edge on the supply line

• A frame always starts and ends with a '1' (frame bits)

• The LSB of a frame transmitted to the sensor is shifted in first

• The LSB of a frame replied by the sensor is shifted out first

• The whole frame sent to the device, including frame bits, is protected with an even positional and an odd

positional parity bit

The first frame sent has to be a valid command to activate the interface mode and it has to be sent within 19ms

after power up. As an additional protection, the device does not deactivate its output stage during this transmission

(using 21 clock pulses) as shown in Figure 3-2. This means that the interface driver of the programmer needs to

overrule the open drain output stage of the sensor during this initial transmission.

Figure 3-2 First Frame Transmission to the Sensor

Attention: Overruling Vout requires a strong driver on the programmer, since the OUT line must be driven

to low levels close to GND for any “0”-bit and close to VDD for any “1”-bit in order to ensure a

proper communication with the sensor.

After the first frame, to avoid additional power consumption in the output stage of the device, the internal driver is

deactivated in programming mode while the sensor is receiving a frame. It is activated again after completion of

the transmission. This is illustrated in Figure 3-3.

Figure 3-3 Further Frame Transmisson from the Programmer to the Sensor (Write Access)

VDD

Vout

LSB MSB

during first transmission, the output stage is still switched on

power up interface

activated

internal buffer on

VDD

Vout

LSB MSB

during transmission the buffer is switched off internal buffer on

interface

active

interface

active

protocol

output

leading driver

off pulse

protocol

output

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In case of a wrong command or data frame, the interface is immediately locked and the device falls back to its

normal application mode. The read access to the device is triggered by clock pulses on the supply line as shown

in Figure 3-4. The timing of read and write accesses is described in Chapter 3.2.4.

Figure 3-4 Frame Transmisson from the Sensor to the Programmer (Read Access)

3.2.2 Command Frame

The structure of a command frame is shown in Figure 3-5. Available commands are given in Table 3-2. The parity

bits PE (bit 17) and PO (bit 18) have to be set in the follwing way (bit 0 is the LSB, bit 20 is the MSB):

bit0 XOR bit2 XOR bit4 XOR …. XOR bit20 = 0

bit1 XOR bit3 XOR bit5 XOR …. XOR bit19 = 0

Figure 3-5 Command Frame Structure

Table 3-2 List of Available Commands

Command Bits (MSB...LSB) Function

0H000000 Leave programming mode1)

1H000001 Single data readout from given address without increment (sensor

response: one data frame)

2H000010 Continuous data readout from given address without increment

(continuous readout can only be stopped by external supply reset)

3H000011 Data readout from given address with increment (readout finishes

when address “xxx111B” is reached)

9H001001 Single data write to given address without increment (followed by

one data frame)

AH001010 Continuous data write without increment (finished by sending

another command frame)

BH001011 Data write to given address with increment (followed by multiple data

frames; finishes at address “xxx111B” or by sending another

command frame)

CH001100 Enable EEPROM write mode (programs “1”-bits)1)2)

DH001101 Enable EEPROM erase mode (programs “0”-bits)1)2)

EH001110 Enable EEPROM margin check mode (programs level check)1)3)

FH001111 EEPROM refresh (update EEPROM registers)1)

VDD

Vout

LSB MSB

digital data readout, buffer in I/O mode

internal buffer on internal buffer on

tailing driver on

pulse

1 1 P

E0 0 ADDR (6bit) 1 0 CMD (6bit) 1

MSB (bit 20) LSB (bit 0)

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3.2.3 Data Frame

The structure of a data frame sent to the device is shown in Figure 3-6. The parity bits PE (bit 17) and PO (bit 18)

have to be set in the same way as for the command frame (bit 0 is the LSB, bit 20 is the MSB):

bit0 XOR bit2 XOR bit4 XOR …. XOR bit20 = 0

bit1 XOR bit3 XOR bit5 XOR …. XOR bit19 = 0

Figure 3-6 Data Frame to Sensor

Figure 3-7 shows a the structure data frame received from the sensor. Instead of a zero bit followed by two parity

bits, the least significant 3 bits of the address used for the readout are transmitted together with the data. This

allows to check the plausibility of the received data.

Figure 3-7 Data Frame from Sensor

3.2.4 Interface Specification

Table 3-3 specifies the operating conditions of the programming interface, which shall not be exceeded in order

to ensure correct operation of the TLE4998 during programming. All specified parameters refer to these operating

conditions, unless otherwise noted.

1) not to be followed by any data frame

2) followed by application of a programming pulse

3) followed by application of a margin voltage level before the last clock pulse falling edge

Table 3-3 Operating Range of the Programming Interface

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Supply voltage VDD 4.5 – 5.5 V –

Supply buffer capacitance CS47 – 1000 nF VDD to GND

Load capacitance CL– – 8 nF OUT to GND

Ambient temperature TPRG 10 – 60 °C during programming

Number of programming

cycles

NPRG 10 Cycles Programming is allowed only at

start of lifetime

Programming time tPRG – 100 – ms For complete memory

Programming start time tPRG_START – – 19 ms To start programming mode, a

first read command shall be sent

within this time window after

power-up

1 0 P

EDATA (16bit) 1

MSB (bit 20) LSB (bit 0)

1ADR (3 LSBs) DATA (16bit) 1

MSB (bit 20) LSB (bit 0)

@ L/ W

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The specification for timings and electrical levels of the programming interface is shown in Table 3-4. The meaning

of the timing parameters is illustrated in Figure 3-8.

Figure 3-8 Frame Timing

In order to permanently store a programmed parameter set to the EEPROM, the “EEPROM erase” and “EEPROM

write” commands shall be sent, followed by a programming pulse. Figure 3-9 shows the timing of the programming

pulse.

Figure 3-9 Programming Pulse Timing

Table 3-4 Electrical and Timing Specification of the Programming Interface

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

VDD clock high level VDD,CLKHI 9 10 11 V specification of VDD operating

range does not apply to clock

VDD clock low level VDD,CLKLOW 4.8 5 5.2 V

OUT data out high level VO,OHIGH – – – V refer to open-drain specification in

data sheet

OUT data out low level VO,OLOW ––– V

OUT data in high level VO,IHIGH 50% – 100% of VDD

OUT data in low level VO,ILOW -0.2 0.0 0.1 V

OUT data input current IO-5 – 5 mA

VDD clock high time tCH 2.5 50 – µs

VDD clock low time tCL 2.5 50 – µs

Data in setup time tSU 1.5 2.0 – µs to rising VDD

Data in hold time tHLD 2.3 3.0 – µs after rising VDD

Data out settling time tSET – 1.0 1.7 µs after rising VDD

Time between frames tMIN 10.0 – – µs

VDD

Vout

LSB MSB

tcl

tch

tsu thldtdel thlm

LSB

tset tset

tmin

init

frame

data read

frame

VDD

Vout

MSB

HLD

LSB

MIN

next command

frame

MIN

erase or write

command frame

(buffer stays off)

prog

pulse

O,PROG

(rise)

O,PROG

(fall)

PROG,WR

or t

PROG,ER

HLD

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After programming, a margin check is necessary to test the stability of the programmed data. The margin check

is initiated by an “EEPROM margin check” command followed by a margin voltage.

Figure 3-10 Margin Check Timing

The margin voltage is varied during subsequent steps within the threshold margin level range. A too low margin

voltage value indicates a too short programming pulse duration or a too low programming voltage. A too high

margin voltage value indicates a too long programming pulse duration or a too high programming voltage.

Table 3-5 gives the electrical and timing specifications of the programming pulse and the margin voltage check

procedure.

Table 3-5 Electrical and Timing Specification of the Programming Pulse and Margin Voltage

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

OUT data input current IO0 – 5 mA during application of

programming pulse or margin

voltage

OUT margin level VO,MARG -0.1 – 7 V

Threshold margin level VTH 2.23 – 4.5

0.4

check “1”

check “0”

Margin setup time tMARG 200 – – µs

VDD slope for margin VDD/t -10 – -1.25 V/µs

OUT program level VO,PROG 19.2 19.3 19.4 V

OUT program slope

(rise)1)

1) faster slope may lead to permanent damage of the EEPROM.

VO,PROG/t – – 2 V/µs time to reach VO,PROG shall not

exceed 50 µs

OUT program slope

(fall)1)

VO,PROG/t -10 – – V/µs

OUT write time tPROG,WR 9.9 10.0 10.1 ms

OUT erase time tPROG,ER 79.2 80.0 80.8 ms

VDD

Vout

MSB LSB

MARG

next command

frame

MIN

margin

command frame

(buffer stays off)

(fall)

HLD

apply V

O,MARG

and

capture EEPROM data

MIN

HLD

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3.3 Register Map

Table 3-6 shows the internal registers of the TLE4998 (compare also Figure 2-1).

Note: To access the registers (except STATUS, HADC, TADC, SADC, DOUT and TEST), the digital signal

processing unit (DSPU) has to be disabled first via the TEST register.

DOUT

This value is the 16 bit unsigned decimal result applied to the internal protocol generation for the open drain output

stage. It includes the clamping limits if programmed. The value range is from decimal 0 to 65535.

HCAL

This register contains the temperature- and stress-compensated magnetic measurement as a 16bit signed value.

This value is in the range of +/- 30000.

TCAL

This register contains a 16 bit signed value and delivers the current junction temperature of the device. The

junction temperature in °C is calculated from the register value by: TJ= (T_CAL/16+48) [°C].

SCAL

This register contains the calibrated stress measurement value used for the stress compensation.

HADC

This register contains a 16bit signed value that corresponds to the raw Hall cell measurement value. This value is

in the range of +/- 20000.

TADC

This register contains a 15bit unsigned raw temperature value.

SADC

This register contains the raw stress measurement value.

Table 3-6 TLE4998 Register Map

Address Symbol Function R/W

00HDOUT Data out value (16bit unsigned, with clamping) read only

05HHCAL Calibrated Hall value read only

06HTCAL Calibrated temperature value, including reference temperature T0read only

07HSCAL Calibrated stress value read only

0AHHADC Uncalibrated Hall ADC value read only

0BHTADC Uncalibrated temperature ADC value read only

0CHSADC Uncalibrated stress ADC value read only

0FHSTATUS Status register read only

10H...1AHEEPROM EEPROM registers (see Chapter 3.4) read/write

1BHTEST Test mode register read/write

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STATUS

The content of the status register is shown in Figure 3-11.

Figure 3-11 Status Register

• CRC ok has to be “1”, otherwise the DSP built-in self-test was failed and the device is defective

• LOCKED has to be “0” as long as the lockbits of the EEPROM are not programmed. This bit changes to “1” in

the next power cycle (external reset) after locking the device.

• perr_adr has to be on address FH (“1111B”), otherwise it shows the first EEPROM address where the internal

parity check failed.

• perr_more has to be “0”, otherwise more than one EEPROM address has a parity error.

• perr_col has to be “0”, otherwise one or more EEPROM columns have a parity error.

• HWver contains the hardware version. It is “000B” for the TLE4998P (all versions) and the TLE4998S3, S4 and

S3C. It is “001B” for the TLE4998C3, C4, C8(D) design step B1 and the TLE4998S8(D).It is “002B “ for the

TLE4998C8(D) design step B2.

• ROMSIG has to be 15H, otherwise the DSP ROM is not valid and the device is defective.

For a sensor that is operating correctly, the status register is equal to A83DH (TLE4998P all types, TLE4998S3,

S4, and S3C), A93DH (TLE4998C all types with design step B1, TLE4998S8(D)) and AA3DH (TLE4998C8(D)

design step B2), respectively.

TEST

The content of the test register is shown in Figure 3-12. All bits are “0” after reset. All bits not described or used

shall be kept at “0”.

Figure 3-12 Status Register

• “Margin zero on” is used to select the margin test mode. It is set to ‘1’ for testing the EEPROM threshold

voltages of cells programmed to ‘0’, and it is set to ‘0’ for testing the EEPROM threshold voltages of cells

programmed to ‘1’.

• “FEC off” switches off the error correction of the EEPROM. This bit has to be set when reading the EEPROM

content.

• “REF off” switches off the automatic (cyclic) refresh performed by the DSP to actualize the EEPROM registers

from the EEPROM cells. This bit has to be set when writing new values to the EEPROM registers.

• “DSP off” switches off the signal processing unit (DSP). This bit has to be set prior to access the internal

• “DSP stop” has to be set prior to switching the DSP off (as a separate command) before reading out the

calculated data HCAL, TCAL, and/or SCAL. This allows the DSP to finish the calculation of the current sample

and all values in the RAM are consistent.

15 14 13 12 11 10 9876543210

LSB

ROMSIG4

perr_more

LOCKED

perr_adr0

CRC ok

perr_adr1

perr_adr2

perr_adr3

HWver0

ROMSIG3

ROMSIG2

ROMSIG1

ROMSIG0

HWver1

HWver2

perr_col

15 14 13 12 11 10 9876543210

LSB

FEC off

DSP stop

REF off

DSP off

PROTOCOL off

Margin zero on

MSB

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• “PROTOCOL off” can be set together with “DSP off ”, if it is desired to get correct protocol output after “DSP

off” and “PROTOCOL off” are cleared again. Otherwise, a reset is necessary to get correct protocol output.

3.4 EEPROM Map

The EEPROM registers 10H to 1AH mirror the content of the TLE4998’s EEPROM. The EEPROM map is different

for the TLE4998 types.

Figure 3-13 shows the content of the EEPROM registers for the TLE4998P (all types) and the TLE4998S3, S4,

and S3C.

Figure 3-14 shows the content of the EEPROM registers for the TLE4998C (all types) and the TLE4998S8(D).

Figure 3-13 EEPROM Map of TLE4998P (all types), TLE4998S3, S4 and S3C.

The fields marked in red are configuration parameters for the sensor hardware. Those marked in yellow are used

by the DSP algorithms for signal processing. The blue and cyan fields are parity bits for the corresponding lines

and columns used by the internal forward error correction (FEC). All parameters are unsigned integer values. The

reserved fields marked in white shall not be changed.

The functional description of the configuration and calibration parameters in the EEPROM map is given in

Chapter 4.

Parity Bits

The parity Pc of each column (including the precalibration ranges) is even for even bit positions (bit0=LSB, bit2,

bit4, ... bit14) and the parity Pc for all odd columns (bit1, bit3, ... bit13) is odd, except for the parity Pc for the column

at bit15 (MSB), which is even. The parity Pl of every EEPROM line (address 0x11 ... 0x1A) is always odd.

Note: Before accessing the EEPROM, the forward error correction (FEC) shall be disabled via the TEST register.

ADDR Description 15141312111009080706050403020100

Parityofeachcolumn P

IClockhigh,clamping

high/low P

LH CH‐ Clampinghigh(bit6...0) CL‐ Clampinglow(bit6...0)

Gain P

G‐ Gain(bit14...0)

Offset P

OS‐ Offset(bit14...0)

ID,precalstatus,

predivider,TQvalue P

ID PC Prediv

(bit3...0)

TQ‐ quadratictemperature

coefficient(bit7...0)

Bandwidth,Range,TL

value,IClocklow P

(bit2...0)

R

(1...0)

TL‐ lineartemperaturecoefficient

(bit8...0) LL

TTvalue

(donotmodify) P

Reserved‐ donotmodify TT‐ cubictemp.

coefficient(4...0)

Reserved P

Reserved‐ donotmodify

Reserved P

Reserved‐ donotmodify

Reserved P

Reserved‐ donotmodify

Reserved P

Reserved ‐donotmodify

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Precalibration Bit

The “PC” bit in line 14H shall be set by the system integrator when changing the EEPROM content of the device

for the first time. Thereby it is possible to identify devices which still have precalibrated settings from the Infineon

factory calibration (PC = 0 means precalibrated device, PC = 1 means user calibrated device).

Lock Bits

LH and LL are lock bits (LH locked if '1', LL locked if '0'). If either LH, LL or both are set to locked state, the

programming interface cannot be accessed anymore.

Figure 3-14 EEPROM Map of TLE4998C (all types), and TLE4998S8(D).

3.5 Programming Flow

The programming flow diagram in Figure 3-15 shows the procedural steps to setup the EEPROM content and to

program new values (EEP_NEW). EEP_PROG means the intermediate values stored in the EEPROM register

and EEP_OLD means the initial (old) EEPROM content.

Flowchart description:

1. Switch on the device.

2. Send an initial command (status register readout):

Check that the status is valid (Status register = A83DH, A93DH or AA3DH compare Chapter 3.3), if not, do not

continue and check the failure.

3. Set the register bits FECoff = 1, DSPoff = 1, REFoff = 1 (allows EEPROM access).

4. Read out the EEPROM content to an array EEP_OLD (store also for reference purpose and traceability)

In parallel: Prepare the data that shall be programmed as an array EEP_NEW.

5. Calculate the bits to be cleared from EEP_OLD to EEP_NEW as EEP_PROG array.

6. Write the EEPROM content from the EEP_PROG array to the EEPROM registers

ADDR Description 15141312111009080706050403020100

Parityofeachcolumn P

IClockhigh,clamping

high/low P

LH CH‐ Clampinghigh

(bit5...0)

CL‐ Clamping

low(bit5...0) F(1...0)

Gain P

G‐ Gain(bit14...0)

Offset P

OS‐ Offset(bit14...0)

ID,precalstatus,

predivider,TQvalue P

ID PC Prediv

(bit3...0)

TQ‐ quadratictemperature

coefficient(bit7...0)

Bandwidth,Range,TL

value,IClocklow P

(bit2...0)

R

(1...0)

TL‐ lineartemperaturecoefficient

(bit8...0) LL

Prot,

TTvalue(donotmodify) P

Prot

(1...0)

Reserved‐ donotmodify TT‐ cubictemp.

coefficient(4...0)

Reserved P

Reserved‐ donotmodify

Reserved P

Reserved‐ donotmodify

Reserved P

Reserved‐ donotmodify

Reserved P

Reserved ‐donotmodify

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TLE4998 Programming

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7. Send the EEPROM erase command

Apply an erase programming pulse on the output pin (see Chapter 3.2.4).

8. Calculate the bits to be set from EEP_OLD to EEP_NEW as EEP_PROG array.

9. Write the EEPROM content from the EEP_PROG array to the EEPROM registers.

10. Send the EEPROM write command

Apply a write programming pulse on the output pin (see Chapter 3.2.4).

11. Send the EEPROM margin command

During the falling edge of the margin pulse on VDD, apply VO,MARG on the output (see Chapter 3.2.4).

12. Read out the EEPROM content to the array EEP_PROG.

13. Verify the EEP_PROG data against EEP_NEW to check the programming (no bits flipped)

Optionally, steps 11 to 13 can be looped to find the exact margin threshold voltage.

If the margin threshold voltage is too low, do not continue and check the failure.

14. Check the status register again.

@ % OJ: v EEP om <- eepinew="" v="" eeflold="" eepine="">

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Figure 3-15 Programming Flow

The following chapters give a more detailed description of individual steps of the programming flow:

3.5.1 Readout of the EEPROM Content

The following steps are used to readout the EEPROM and store the content in an array:

1. Send a block read command (EEPROM data readout: Command 03H, Address: 10H).

2. Read the first 8 data words of the EEPROM and store it in an array.

3. Send a read command (EEPROM data readout: Command 01H, Address: 18H).

EEP_OLD

EEP_NEW

EEP_OLD

EEP_NEW

Readout could be

looped for several

margin voltages

(starting from a very

high voltage e.g. 5V) to

find the margin level of

the EEPROM

EEPROM

programming

INIT-CMD:

cmd=0x01

adr=0x0F

READ DATA

= 5V

Status

ILLEGAL

STATUS:

analyse

problem

CMD (write):

cmd=0x09

adr=0x1B

DAT: 0x06C0

(DSP, FEC,

REF off)

CMD (b read)

cmd=0x03

adr=0x10

RD. B-DATA

CMD (read)

cmd=0x01

adr=0x18

READ DATA

CMD (read)

cmd=0x01

adr=0x19

READ DATA

CMD (read)

cmd=0x01

adr=0x1A

READ DATA

11x 16bit

> EEP_OLD <

Store this initial

dataset (allows

later restore)

> EEP_NEW <

Given by TC

setup and/or 2P

algorithms etc.

User input, TC

setup algorithm or

2P calibration

algorithm setup

Create erase

pattern*2x 11x 16bit

CMD (bwrite)

cmd=0x0b

adr=0x10

WR. B-DATA

CMD (write)

cmd=0x09

adr=0x18

WR. DATA

CMD (write)

cmd=0x09

adr=0x19

WR. DATA

CMD (write)

cmd=0x09

adr=0x1A

WR. DATA

CMD

(EEP erase):

cmd=0x0D

adr=0x00

prog

PULSE

Create write

pattern°

2x 11x 16bit

CMD

(EEP write):

cmd=0x0C

adr=0x00

prog

PULSE

CMD(marg.):

cmd=0x0E

adr=0x00

marg

-ramp

CMD (b read)

cmd=0x03

adr=0x10

RD. B-DATA

CMD (read)

cmd=0x01

adr=0x18

READ DATA

CMD (read)

cmd=0x01

adr=0x19

READ DATA

CMD (read)

cmd=0x01

adr=0x1A

READ DATA

content =

EEP_NEW ?

ILLEGAL

MARGIN

READ:

analyse

problem

FINISHED

margin higher

required limit ?

= 0V (off)

* Erase pattern: For each line I from 0x10 to 0x1A:

EEP_PROG[i] = INVERT ((EEP_OLD[i] XOR EEP _NEW[i]) AND EEP_OLD[i])

(as precal areas must not be changed, the bits in this areas must remain ‚1')

° Write pattern: For each line I from 0x10 to 0x1A:

EEP_PROG[i] = (EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_NEW[i]

(as precal areas must not be changed, the bits in this areas must remain ‚0')

Optionally do a last status

readout (adr. 0x0F) to check

the IF mode is still active

and the device is ok.

CMD (bwrite)

cmd=0x0b

adr=0x10

WR. B-DATA

CMD (write)

cmd=0x09

adr=0x18

WR. DATA

CMD (write)

cmd=0x09

adr=0x19

WR. DATA

CMD (write)

cmd=0x09

adr=0x1A

WR. DATA

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4. Read the 9th data word of the EEPROM and store it in an array.

5. Send a read command (EEPROM data readout: Command 01H, Address: 19H).

6. Read the 10th data word of the EEPROM and store it in an array.

7. Send a read command (EEPROM data readout: Command 01H, Address: 1AH).

8. Read the 11th data word of the EEPROM and store it in an array.

3.5.2 Setting the EEPROM Content

The following steps are used to set the EEPROM content with data from an array:

1. Send a block write command (EEPROM data write: Command 0BH, Address: 10H).

2. Send the first 8 data words from the array to the EEPROM.

3. Send a write command (EEPROM data write: Command 09H, Address: 18H).

4. Send the 9th data word from the array to the EEPROM.

5. Send a write command (EEPROM data write: Command 09H, Address: 19H).

6. Send the 10th data word from the array to the EEPROM

7. Send a write command (EEPROM data write: Command 09H, Address: 1AH).

8. Send the 11th data word from the array to the EEPROM.

3.5.3 Calculation of Bits to Erase

The EEP_PROG array for the erase procedure is calculated from the old EEPROM content EEP_OLD and the

new EEPROM content EEP_NEW in the following way:

For each data word i: EEP_PROG[i] = INVERT ((EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_OLD[i])

Table 3-7 shows an example of a calculated erase mask.

3.5.4 Calculation of Bits to Write

The EEP_PROG array for the write procedure is calculated from the old EEPROM content EEP_OLD and the new

EEPROM content EEP_NEW in the following way:

For each data word i: EEP_PROG[i] = (EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_NEW[i]

Table 3-7 shows an example of a calculated erase mask.

3.5.5 Margin Voltage Check

The threshold voltage of EEPROM cells is dependent on the programming voltage and programming pulse length.

For reliable programming the programming pulse has to be kept within the specification (Table 3-5) at the sensor

interface. The margin command can be used to check the threshold voltages of the programmed cells:

To check the cells programmed to '1', a voltage VO,MARG is applied after the margin check command (Command

EH). For EEPROM cells with a threshold voltage smaller than the applied VO,MARG, a '0' will be stored to the

Table 3-7 Erase Array Example

EEP_OLD 0101010101010101

EEP_NEW 0101110001010101

EEP_PROG 1111111011111111

Table 3-8 Write Array Example

EEP_OLD 0101010101010101

EEP_NEW 0101110001010101

EEP_PROG 0000100000000000

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EEPROM registers, for those with a higher threshold voltage, a '1' will be written. By sweeping the applied VO,MARG,

the actual threshold voltages of each EEPROM cell can be identified.

In order to check the threshold voltages of EEPROM cells programmed to ‘0’, it is necessary to activate the “Margin

zero on” bit in the TEST register before sending the margin check command. Also for the ‘0’ cells, the actual

threshold voltages of each EEPROM cell can be identified, by sweeping the applied VO,MARG,.

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4 Configuration & Calibration Parameters

This chapter describes the configuration and calibration parameters that can be set in the EEPROM of the

TLE4998 (see EEPROM map, Chapter 3.4)

4.1 Magnetic Field Range - R

The working range of the magnetic field defines the input range of the A/D converter. It is always symmetrical

around the zero field point. Any two points in the magnetic field range can be selected to be the end points of the

output value. The output value is represented within the range between the two points.

In the case of fields higher than the range values, the output signal may be distorted.

4.2 Gain Setting - G

The overall sensitivity is defined by the range and the gain setting. The output of the ADC is multiplied by the Gain

value. The Gain value is given by:

(4.1)

4.3 Offset Setting - OS

The offset value corresponds to an output value with zero field at the sensor. The offset value can be calculated by:

(4.2)

Note: The offset value can be set outside the output range of the sensor. This feature can be used to map a

magnetic range apart from 0 mT (for example -200 mT to -150 mT) to the full output range.

Table 4-1 Range Setting

Parameter R Range Nominal Range in mT1)

1) Absolute accuracy of range values is not specified.

3Low ±50

12)

2) Setting R = 2 is not used, internally changed to R = 1.

Mid ±100

0 High ±200

Table 4-2 Gain

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Gain range Gain - 4.0 – 3.9998 – 1)2)

1) For Gain values between -0.5 and +0.5, the numerical accuracy decreases.

To obtain a flatter output curve, it is recommended to select a higher range setting.

2) In 100 mT range, a gain value of +1.0 corresponds to typically 0.8%/mT (TLE4998P), or 32 LSB12/mT sensitivity. It is

recommended to do a final 2-point calibration of each IC within the application.

Gain quantization steps ∆Gain – 244.14 – ppm Corresponds to 1/4096

4096/)16384(

−=

GGain

1638

−=

OSOUT

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Configuration & Calibration Parameters

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4.4 Low-Pass Filter - LP

A configurable digital low-pass filter is implemented at the output of the Hall ADC. The possible settings are shown

in Table 4-4. Figure 4-1 shows the filter characteristics as a magnitude plot for the settings 80 Hz to 1390 Hz (from

left to right). The update rate of the low-pass filter output is nominally 16 kHz.

Figure 4-1 DSP Input Filter (Magnitude Plot)

Table 4-3 Offset

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Offset range1)

1) Infineon pre-calibrates the samples at zero field to typically 50% output value in 100 mT range. It is recommended to do a

final 2-point calibration of each IC within the application.

OUTOS -16384 – 16383 LSB12 SENT/SPC

-400 399 %DY2)

2) DY = PWM duty cycle

PWM

Offset quantization steps ∆OUTOS –1–LSB

12 –

Table 4-4 Low Pass Filter Setting

Parameter LP Nominal cutoff frequency in Hz (-3 dB point)

080

1240

2440

3640

4860

5 1100

6 1390

7Off

-6

-5

-4

-3

-2

-1

Magnitude (dB)

Frequency (Hz)

(iﬁineon OUT CH

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4.5 Clamping - CH, CL

The clamping function is useful for separating the output range into an operating range and error ranges. If the

magnetic field is exceeding the selected measurement range, the output value OUT is limited to the clamping

values. Any value in the error range is interpreted as an error by the sensor counterpart.

Figure 4-2 shows an example in which the magnetic field range between Bmin and Bmax is mapped to duty cycles

between 16% and 84%.

Figure 4-2 Clamping Example

Clamping - TLE4998P (all types) and TLE4998S3, S4, and S3C:

Table 4-5 Low-Pass Filter

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Corner frequency variation ∆f-20 – +20 % –

Table 4-6 Clamping

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Clamping low1)

1) For CL = 0 and CH = 127 the clamping function is disabled.

OUTCL 0 – 99.22 %DY2)

2) DY = PWM duty cycle

PWM

0 – 65032 LSB16 SENT

Clamping high1)3)

3) CYCLPWM < CYCLPWM mandatory.

OUTCH 0.78 – 100 %DY PWM

511 – 65535 LSB16 SENT

Clamping quantization steps4)

4) Quantization starts for CL at 0%, or 0 LSB12 and for CH at 100% or 4095 LSB12.

∆OUTCx –0.78–%DYPWM

–512–LSB

16 SENT

min

B (mT)

max

65535

Error range

Operating range

OUT

(LSB

)

OUT

55295

10240

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The clamping values for TLE4998P (all types) and TLE4998S3, S4, and S3C are calculated by:

Clamping duty cycle low (deactivated if CL=0):

(4.3)

Clamping duty cycle high (deactivated if CH=127):

(4.4)

Clamping - TLE4998C (all types) and TLE4998S8(D):

The clamping values for TLE4998C (all types) and TLE4998S8(D) are calculated by:

Clamping duty cycle low (deactivated if CL=0):

(4.5)

Clamping duty cycle high (deactivated if CH=63):

(4.6)

4.6 Interface Timing Setup - Prediv

The Prediv parameter has different functionalities, depending on the used TLE4998 type. All timing settings are

subject to the internal RC oscillator frequency accuracy of ±20%.

Note: The implementation of the timing setup is different in the SENT types TLE4998S8(D) than in the TLE4998S3,

S4, and S3C.

PWM Frequency - TLE4998P (all types)

The nominal PWM frequency of the TLE4998P is calculated by:

(4.7)

Table 4-7 Clamping

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Clamping value low1)

1) For CL = 0 and CH = 63 the clamping function is disabled.

OUTCL 0 – 64512 LSB16 SENT,SPC

Clamping value high1)2)

2) OUTCL < OUTCL mandatory.

OUTCH 1023 – 65535 LSB16 SENT,SPC

Clamping quantization steps3)

3) Quantization starts for CL at 0 LSB12 and for CH at 4095 LSB12.

∆OUTCx – 1024 – LSB16 SENT,SPC

1632

⋅⋅=

CLOUT

11632)1(

−⋅⋅+=

CHOUT

1664

⋅

⋅=

CLOUT

11664)1(

−

⋅⋅+=

CHOUT CH

%201953

)1Prediv/(

±=

HzOSC

OSCf

Clk

ClkPWM

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Configuration & Calibration Parameters

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SENT Unit Time - TLE4998S3, S4, and S3C

The nominal unit time of the TLE4998S3, S4, and S3C is calculated by:

(4.8)

SENT/SPC Unit Time - TLE4998C (all types) and TLE4998S8(D)

The nominal unit time of the TLE4998C and TLE4998S8(D) is calculated by:

(4.9)

4.7 SENT/SPC Frame Settings - F

The parameter F is only available for the TLE4998C (all types), and the TLE4998S8(D). It controls the frame type

of the SENT/SPC protocol.

Table 4-8 Pre-divider Setting

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

PWM output frequency fPWM 122 – 1953 Hz OSCclk...oscillator clock

Table 4-9 Pre-divider Setting

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

SENT unit time tUNIT 2.0 – 4.0 μsClkUNIT=8 MHz1)

1) default setting Prediv = 11 for 3 µs nominal unit time. Useable range is 7 to 15.

Table 4-10 Pre-divider Setting

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

SENT/SPC unit time tUNIT 2.0 – 3.88 μsClkUNIT=8 MHz1)

1) default setting Prediv = 8 for 3 µs nominal unit time.

Table 4-11 Frame Selection

Frame Type Parameter F Data Nibbles

16 bit Hall, 8 bit temperature 0 6 nibbles

16 bit Hall 1 4 nibbles

12 bit Hall, 8 bit temperature 2 5 nibbles

12 bit Hall 3 3 nibbles

%208

/)22Prediv(

±=

+×=

MHzClk

Clkf

UNIT

UNITUNIT

%208

/)16Prediv(

±=

MHzClk

Clkf

UNIT

UNITUNIT

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4.8 SPC Trigger Mode - Prot

The parameter Prot is only available for the TLE4998C (all types). It controls the SPC trigger mode. The trigger

modes are described in the TLE4998C data sheet.

4.9 Temperature Compensation - TL, TQ & TT

The TLE4998 has an integrated third-order temperature compensation using the coefficients TL, TQ, and TT,

which is used to compensate the thermal drift of the Hall cell (pre-configured by Infineon).

The magnetic field strength of a magnet depends on the temperature. This material constant is specific for the

different magnet types. The temperature compensation paramters TL and TQ of the TLE4998 can be adapted to

compensate this temperature dependency of the magnet in the application. The TT value is fixed and cannot be

modified.

Three parameters are used for the application temperature compensation:

• Reference temperature T0

• A linear part (1st order) TC1

• A quadratic part (2nd order) TC2

The detailed procedure to derive the optimum TL and TQ paramters for a a given magnet characteristic is

described in Chapter 6.

Table 4-12 SPC Trigger Mode Selection

Mode Parameter PMSB Parameter PLSB

Synchronous 0 No effect

Dynamic range selection 1 0

ID selection 1 1

Table 4-13 Temperature Compensation

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

1st order coefficient TC1TC1-1000 – 2500 ppm/ °C 1)

1) Relative range to Infineon TC1 temperature pre-calibration, the maximum adjustable range is limited by the register-size

and depends on specific pre-calibrated TL setting, full adjustable range: -2441 to +5355 ppm/°C.

Quantization steps of TC1∆TC1– 15.26 – ppm/ °C –

2nd order coefficient TC2TC2-4 – 4 ppm/ °C² 2)

2) Relative range to Infineon TC2 temperature pre-calibration, the maximum adjustable range is limited by the register-size

and depends on specific pre-calibrated TQ setting, full adjustable range: -15 to +15 ppm/°C2.

Quantization steps of TC2∆TC2–0.119–ppm/ °C²–

Reference temp. T0-48 – 64 °C –

@ next N ibb

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5 SENT/SPC Checksum Calculation

For the TLE4998S and TLE4998C, the Checksum nibble of the SENT/SPC protocol is a 4-bit CRC of the data

nibbles including the status nibble. The CRC is calculated using a polynomial x4 +x3 + x2 + 1 with a seed value of

0101.

It is implemented as a series of XOR and shift operations as shown in the following flowchart:

Figure 5-1 CRC Calculation

A microcontroller implementation may use an XOR command plus a small 4-bit lookup table to calculate the CRC

for each nibble.

Figure 5-2 Example Code for CRC Generation

GENERATOR = 1101

SEED = 0101, use this

constant as old CRC

value at first call

Pre-initialization:

VALUE

xor SEED

xor only if MSB = 1

VALUE

SEED

<<1

GENPOLY

xor

VALUE xor

SEED

CRC calculation

Nibble

next Nibble

// Fast way for any µC with low memory and compute capabilities

char Data[8] = {…}; // contains the input data (status nibble, 6 data nibble, CRC)

// required variables and LUT

char CheckSum , i;

char CrcLookup [16] = {0, 13, 7, 10, 14, 3, 9, 4, 1, 12, 6, 11, 15, 2, 8, 5};

CheckSum= 5; // initialize checksum with seed "0101"

for (i=0; i<7; i++) {

CheckSum = CheckSum ^ Data[i];

CheckSum = CrcLookup [CheckSum ];

}

; // finally check if Data[7] is equal to CheckSum

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6 Calibration of TLE4998 Temperature Compensation

A temperature compensation mechanism is implemented in the TLE4998 to account for thermal drift of the Hall

probe sensitivity and thermal reduction of the remanent magnetization of a permanent magnet used in a position

sensing application. Initially, the TLE4998 is pre-configured by Infineon to have a constant magnetic sensitivity

over temperature.

In case the TLE4998 is used to measure an absolute magnetic field, for example in a current sensing application,

then no additional adaption of the temperature compensation by the user is required.

If the TLE4998 is used in a position sensing application where it measures the magnetic field generated by a

moving permanent magnet, then it is typically desired that the output signal of the TLE4998 depend only on the

magnet position. In this case, a user adaptation of the temperature compensation is required to account for thermal

reduction of the magnet’s remanence. Therefore, the TLE4998 has to be configured to increase its sensitivity

accordingly with increasing temperature to compensate the thermal reduction of the remanence.

This temperature coefficient of the remanence depends on the chosen magnet material, so the temperature

compensation of the TLE4998 has to be adapted to the permanent magnet employed in the application.

6.1 Integrated Temperature Polynomial

The integrated temperature compensation of the TLE4998 uses a third order polynomial, as shown in

Equation (6.1).

(6.1)

with:

(6.2)

TJ is the junction temperature in °C. The coefficients TL, TQ, and TT are the linear, quadratic and cubic

temperature compensation coefficients, respectively. They are stored in the EEPROM and pre-configured by

Infineon for a constant magnetic sensitivity over temperature (see Chapter 3.4 for EEPROM map).

The coefficients TL and TQ can be adapted by the user to implement a compensation of the thermal reduction of

a magnet’s remanence. The coefficient TT is fixed to the value pre-calibrated by Infineon. It cannot be adapted.

6.2 Application Sensitivity Polynomial

In order to find the optimum TL and TQ parameters to minimized the position signal error due to the thermal

reduction of the magnet’s remanence, an application sensitivity polynomial has to be derived from a sensitivity

measurement in the application over temperature that describes the desired sensitivity factor as a function of

temperature (see Chapter 6.3). The application sensitivity polynomial is given by Equation (6.3).

(6.3)

TJ is the junction temperature in °C, TC1 (in ppm/°C) and TC2 (in ppm/°C2) are the first and second order

application temperature coefficients and T0 (in °C) is a reference temperature.

SDSP TCAL()1TL 160–

8 8192⋅

---------------------- TCAL

----------------

⎝⎠

⎛⎞

TQ 128–

1024 8192⋅

---------------------------- TCAL

----------------

⎝⎠

⎛⎞

2TT

32768 8192⋅

------------------------------- TCAL

----------------

⎝⎠

⎛⎞

⋅+⋅+⋅+=

TCAL 16 TJ48–()⋅=

SApp TJ

() 1TC

1TJT0

–()TC2TJT0

–()

++=

@ \. ; i + I ,‘_‘<‘:‘ \‘r‘~‘i="" o;="" o="">

TLE4998

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Calibration of TLE4998 Temperature Compensation

User’s Manual 27 Rev. 1.3, 2018-02

Figure 6-1 Example thermal behavior of magnetic remanence M(T) and application sensitivity polynomial

Sapp(T) with reference temperature 48°C.

The reference temperature T0 is a degree of freedom that can be chosen by the user, such that the gain of the

TLE4998 that is configured in the EEPROM, applies at this reference temperature.

In case the calibration of the offset and gain for the output charateristic is done after the calibration of the

temperature compensation, the choice of T0 is not relevant. In this case, the gain at a specific temperature is

configured separately. A choice of T0 = 48°C is recommended for simplicity (to match the reference temperature

in the definition of TCAL in Equation (6.2)).

The application sensitivity polynomial SApp has to be determined in the application to approximately cancel the

temperature dependency of the remanence, as stated in Equation (6.4) and illustrated in Figure 6-1.

(6.4)

MR is the remanence of the permanent magnet as a function of temperature and TA is the ambient temperature in

the application that relates to the junction temperature TJ by Equation (6.5).

(6.5)

Rth is the thermal resistance of the TLE4998 as specified in the data sheet, U is the supply voltage and I is the

supply current.

After determining the application sensitivity polynomial SApp from a sensitivity measurement over temperature, the

sensor parameters TLfinal and TQfinal for the final sensor configuration have to be adapted to combine the

compensation of the Hall sensing element drift (given by the precalibrated values TLpre and TQpre) and the

cancellation of the thermal reduction of the magnet’s remanence (given by SApp), as stated in Equation (6.6).

(6.6)

SDSPfinal(TJ) is the integrated temperature polynomial given by the combination of Equation (6.1) and

Equation (6.2), with the final parameters TLfinal and TQfinal. SDSPpre(TJ) is the integrated temperature polynomial

with the pre-configured parameters TLpre and TQpre.

After determination of the application sensitivity polynomial coefficients and readout of the pre-configured TLpre,

TQpre, and TT parameters via the programming interface, the optimum TLfinal and TQfinal parameters have to be

derived from Equation (6.6) and programmed into the TLE4998.

0,925

0,950

0,975

1,000

1,025

1,050

1,075

-50 0 50 100 150

Rel. Change

(°C)

MR(T)

Sapp(T)

MR(T)*Sapp(T)

SApp TJ

()MRTA

()cons ttan≈⋅

TJTARth UI⋅()⋅+=

SDSPfinal TJ

()SDSPpre TJ

()SApp TJ

()⋅≈

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Calibration of TLE4998 Temperature Compensation

User’s Manual 28 Rev. 1.3, 2018-02

6.3 Determination of Sensitivity Polynomial from Measurement

For the determination of the Coefficients for the application sensitivity polynomial (Equation (6.3)) a measurement

of the temperature behavior of the sensor output in the application is recommended. A basic example for a position

sensing application using the TLE4998 and a moveable permanent magnet is shown in Figure 6-2.

In a setup that uses a permanent magnet, the magnetic field has a temperature dependency due to the thermal

reduction of the remanence. In order to determine the optimum sensitivity compensation behavior of the sensor in

to cancel this temperature dependency, the sensor’s output value shall be measured at different temperatures,

with the permanent magnet in a fixed position.

As the thermal reduction of the remanence depends mainly on the magnetic material used and has typically only

minor variations from sample to sample, a reference measurement on a number of application samples is typically

sufficient to determine a reference polynomial for the application in general, which is to be used for production. It

is typically not required to perform the described measurement over temperature for every individual sample.

Figure 6-2 Example Position Sensing Application

With the described setup, the following procedure is used to obtain the coefficients of the application sensitivity

polynomial:

• Measure the sensor output for at least three different temperatures at a defined, fixed magnet position. The

magnetic flux densitiy at the sensor shall be non-zero at this given magnet position. It is recommended for best

accuracy of the calibration procedure to use a magnet position that leads to the highest possible magnetic flux

at the sensor, while still being inside the configured magnetic flux range (± 50 mT, ±100 mT, or ±200 mT).

• For each data point, read the junction Temperature TJ

(i), and the DOUT(i) value via the programming interface.

• For each data point, calculate the compensation sensitivity value S(i) from the DOUT(i) value and the output

value at zero field DOUT0, using Equation (6.7)

(6.7)

•Plot S

(i) as a function of TJ

(i) and apply a quadratic fit (cx2 + bx + a) which yields coefficients a, b and c (See

Figure 6-3).

B(T)

Movement

TLE4998

Si() DOUT0

DOUT i() DOUT0

–

-------------------------------------------------=

@ / I ( )

TLE4998

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Figure 6-3 Example Polynomial Fit Procedure.

• Derive the coefficients of the application sensitivity polynomial from the parameters a, b, and c obtained from

the quadratic fit using Equation (6.8) and Equation (6.9).

(6.8)

(6.9)

6.4 Calculation of Final Temperature Compensation Parameters

After determination of the application sensitivity polynomial Sapp, it is necessary to adapt the temperature

compensation paramters TL and TQ in the EEPROM such that the overall sensitivity of the TLE4998 shows the

desired increase over temperature to compensate for the thermal reduction of the magnet’s remanence in the

application.

6.4.1 Algorithm for Finding the Optimum Temperature Coefficient Set

For an optimum temperature compensation in the application, the set of coefficients TL and TQ have to be found

that best fulfill the condition stated in Equation (6.6). To find this parameter set, an error function ε(T) is defined

in that is minimized in an iterative procedure.

(6.10)

SDSPfinal(TJ) is the integrated temperature polynomial given by the combination of Equation (6.1) and

Equation (6.2), with the final parameters TLfinal and TQfinal. SDSPpre(TJ) is the integrated temperature polynomial

with the pre-configured parameters TLpre and TQpre. C is a constant to be varied in the iterative procedure.

y = 2,135E-06x

+ 6,550E-04x + 1,305E+00

1,26

1,28

1,30

1,32

1,34

1,36

1,38

1,40

1,42

1,44

-50 0 50 100 150

Sensitivity correction S(T

)

(°C)

S(i)

Quadratic fit

a=1.305,b=6.55E‐4°C‐1,c=2.135E‐6°C‐2

TC1

b2cT

⋅⋅+

abT

0cT

⋅+⋅+

------------------------------------------=

TC2

abT

0cT

⋅+⋅+

------------------------------------------=

εTJ

() SDSPfinal TJ

()

DSPpre TJ

()Sapp TJ

()⋅⋅

----------------------------------------------------------------1–=

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In a second step, the error function defined in Equation (6.10) is summed over the temperature range in finite

equidistant steps TJ

(i). For the computation, a step size of 10°C or less is recommended. Then, the parameters TL,

TQ, and the constant C are varied until the residual εrms in Equation (6.11) is minimized.

(6.11)

6.4.2 Example Implementation Code for Temperature Calibration

The following code example is done in Microsoft® Visual Basic® and can be adapted to any other programming

language.

Setup of global Variables

Precalibrated parameter set read from the sensor:

• TL_pre (as stored in EEPROM)

• TQ_pre (as stored in EEPROM)

• TT (as stored in EEPROM)

Valid ranges are: TL_pre: 0...511; TQ_pre: 0...255; TT: 0...31.

Given user values in °C and ppm:

• T0 (application sensitivity polynomial reference temperature)

• TC1 (application sensitivity polynomial linear temperature coefficient)

• TC2 (application sensitivity polynomial quadratic temperature coefficient)

Valid ranges are: T0_user: -50...80, TC1_user: -0.001...0.0025, TC2_user: -0.000004...0.000004.

Last but not least we have the new setup values, we initialize partly:

• TL (used as sweep variable, needs no initialization)

• TQ (used as sweep variable, needs no initialization)

Valid ranges are: TL: 0...511; TQ: 0...255;

Sensitivity Calculation Subroutines

The first function calculates the user polynomial at a given temperature T:

Private Function S_app(ByVal T) As Double

S_user = 1 + TC1 * (T - T0) + TC2 * (T - T0) ^ 2

End Function

The next function calculates the sensor DSP behaviour after precalibration at a given temperature T:

Private Function S_dsppre(ByVal T) As Double

S_dsppre = 1 + (TL_pre - 160) * (T - 48) / 8 / 8192

+ (TQ_pre - 128) * ((T - 48) ^ 2) / 1024 / 8192

- TT * ((T - 48) ^ 3) / 32768 / 8192

End Function

Finally, there is the calculation function for the DSP polynomial at a temperature T:

Private Function S_dsp(ByVal T) As Double

S_dsp = 1 + (TL - 160) * (T - 48) / 8 / 8192 +

(TQ - 128) * ((T - 48) ^ 2) / 1024 / 8192 -

TT * ((T - 48) ^ 3) / 32768 / 8192

End Function

For the algorithm we need the already explained error function:

εrms

----εTJ

i()

()()

i1=

∑

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Calibration of TLE4998 Temperature Compensation

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Private Function epsilon(ByVal T) As Double

epsilon = -1 + S_dsp(T) / (C * S_dsppre(T) * S_app(T))

End Function

Iteration Loop

The iteration loop looks through all TL and TQ values and check for the smallest rms error. It is done in two steps:

First it looks for a rough optimum point with a coarse step size of 10 for both parameters. In a second step it iterates

again using stepsize 1 around that point to find a refined optimum.

Rem --> Initialize temperature sweep parameters

T_min = -40

T_max = 150

T_step = 10

n = Math.Round((T_max - T_min) / T_step)

Rem --> Initialize variables to keep track of current optimum values

epsilon_rms_opt = 9999

TL_opt = 0

TQ_opt = 0

Rem =========================================================================

Rem --> Sweep in two runs, the coarse global and the fine local search

For Rounds = 1 To 2

Rem =====================================================================

Rem --> Initialize sweep parameters

Rem First round coarse, second round fine

If (Rounds = 1) Then

TL_lo = 0

TL_hi = 510

TL_step = 10

TQ_lo = 0

TQ_hi = 250

TQ_step = 10

ElseIf (Rounds = 2) Then

TL_lo = TL_opt - 9

TL_hi = TL_opt + 9

TL_step = 1

TQ_lo = TQ_opt - 9

TQ_hi = TQ_opt + 9

TQ_step = 1

End If

Rem =====================================================================

Rem --> TL sweep

For TL = TL_lo To TL_hi Step TL_step

Rem =================================================================

Rem --> TQ sweep

For TQ = TQ_lo To TQ_hi Step TQ_step

Rem =============================================================

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Rem --> Determine minimizing C by calculating average epsilon

epsilon_sum = 0

C = 1

For T = T_min To T_max Step T_step

epsilon_sum = epsilon_sum + epsilon(T)

epsilon_mean = (epsilon_sum / n)

C = epsilon_mean + 1

Rem =============================================================

Rem --> Determine epsilon sum

epsilon_sum = 0

For T = T_min To T_max Step T_step

epsilon_sum = epsilon_sum + epsilon(T) ^ 2

epsilon_rms = Math.Sqr(epsilon_sum / n)

Rem =============================================================

Rem --> Determine if new optimum parameters were found

If epsilon_rms < epsilon_rms_opt Then

epsilon_rms_opt = epsilon_rms

TL_opt = TL

TQ_opt = TQ

End If

Rem =========================================================================

Rem --> Finally retrieve the best TL, TQ values stored during the sweep

TL_final = TL_opt

TQ_final = TQ_opt

After the iteration is complete, the values TLfinal and TQfinal contain the optimum values for TL and TQ. These

values shall be programmed into the sensor’s EEPROM.

6.5 Usage of Infineon’s Temperature Calibration Tool

For laboratory calibration purpose, Infineon provides a simple tool to determine the calibration parameters from

measurement data (see Figure 6-4).

The following sequence of steps is used for the temperature calibration the Infineon tool:

1. Measure the sensor’s DOUT and TCAL registers at a fixed magnet position for different temperatures as

described in Chapter 6.3, enter the TJ (in °C) and DOUT (16bit) values in the table fields marked in yellow (see

Figure 6-4, upper left side). For the readout of this data, the Infineon TLE4998 Evaluation Kit can be used.

2. The tool automatically calculates the corresponding Sensitivity correction values S from the entered TJ and

DOUT values according to Equation (6.7).

3. Based on the calculated S values, the tool performs a quadratic fit and calculates the Application Sensitivity

Polynomial parameters TC1 and TC2 (see Figure 6-4, upper right side).

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Figure 6-4 Infineon tool for temperature calibration, application sensitivity polynomial fit.

4. Readout the sensor’s preprogrammed TLpre and TQpre values and enter them in the corresponding table fields

marked in yellow (see Figure 6-5 upper left side). For the readout of this data, the Infineon TLE4998 Evaluation

Kit can be used.

5. The tool calculates the TLfinal and TQfinal parameters out of the entered TLpre and TQpre values, the (fixed) TT

value and the TC1 and TC2 coefficients determined in steps 1-3. For that, an automated script is used that

implements the procedure explained in Chapter 6.4. The calculated values TLfinal and TQfinal appear in the

corresponding table fields marked in green (see Figure 6-5 upper right side)

6. Program the calculated TLfinal and TQfinal values into the TLE4998 using the Infineon TLE4998 Evaluation Kit

or a suitable programmer tool.

For illustration purpose, the tool also displays graphs for the preprogrammed and final sensitivity polynomials,

SDSP,pre and SDSP,final, the application sensitivity polynomial Sapp and the product SDSP,pre*Sapp. Ideally, after

succesful calibration, SDSP,final should by approximately equal SDSP,pre*Sapp (compare Equation (6.6)).

The tool displays also the error that occurs due to imperfect matching of SDSP,final and SDSP,pre*Sapp. Typically, after

the calibration procedure, this error should be on the order of ±0.1%.

TLE4998

Temperature Compensation Tool

16.03.2015, Rev. 2.0

User Parameter Calculation

Legend:

iTJ(i) [°C] DOUT(i) [LSB16] S(i) y = a + bx + cx2yellow: user input

1 -40 58326 1,282 a = 1,31E+00 white: Excel formula

2 -20 58130 1,292 b = 6,55E-

[°C-1]green: VB script calc.

3 0 57802 1,309 c = 2,14E-

[°C-2]

4 25 57540 1,323

5 50 57212 1,340 Suser = 1 + TC1user(T-T0user) + TC2user(T-T0user)2

6 75 56688 1,370 T0user =

[°C] free parameter; 48°C is

7 100 56360 1,389 TC1user = 641[ppm/°C] recommended

8 120 55901 1,416 TC2user = 1,59[ppm/°C2]

TJ(i) [°C] and DOUT(i) shall be read from the sensor for each data point (TJ= TCAL/16 + 48)

y = 2,138E-06x

+ 6,548E-04x + 1,305E+00

1,26

1,28

1,30

1,32

1,34

1,36

1,38

1,40

1,42

1,44

-50 0 50 100 150

Sensitivity correction S(T

)

(°C)

S(i)

Quadratic fit

@ Vii/f N

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Calibration of TLE4998 Temperature Compensation

User’s Manual 34 Rev. 1.3, 2018-02

Figure 6-5 Infineon tool for temperature calibration, TL and TQ calculation.

New DSP Parameter Calculation

Input: T0

user

= 48 [°C] TL

final

and TQ

final

are calculated automatically

pre

= 164 ( 0 to 511) TC1

user

= 6,41E-04 [°C

-1

]TL

final

= 207

pre

= 178 ( 0 to 255) TC2

user

= 1,59E-06 [°C

-2

]TQ

final

= 190

pre

= 9 ( 0 to 31) TT

final

= 9

pre

and TQ

pre

shall be read from the sensor via the programming interface

TT is fixed by Infineon to value 9

J(i)

[°C] S

dsp,pre

app

dsp,final

dsp,pre

* S

app

Error (%)

1 -40 1,0636 0,9559 1,0170 1,0168 0,02

2 -20 1,0340 0,9638 0,9960 0,9965 -0,05

3 0 1,0145 0,9729 0,9863 0,9870 -0,07

4 25 1,0022 0,9861 0,9878 0,9882 -0,04

5 50 1,0001 1,0013 1,0015 1,0014 0,00

6 75 1,0053 1,0185 1,0241 1,0239 0,02

7 100 1,0146 1,0376 1,0526 1,0528 -0,02

8 120 1,0228 1,0544 1,0774 1,0784 -0,09

Error (%) is the deviation of S

dsp,final

from the product of S

dsp,pre

times S

app

0,90

0,95

1,00

1,05

1,10

-50 0 50 100 150

Sensitivity

(°C)

Sdsp,pre

Sapp

Sdsp,final

Sdsp,pre

* Sapp

@ 55555 DDDDDD

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7 Calibration of TLE4998 Output Characteristic

In a position sensing application, the maximum and minimum magnetic field sensed by the TLE4998 depends on

the employed permanent magnet and the movement range covered by the application. To achieve the maximum

possible accuracy in such applications, it is recommended to adapt the output characteristic of the TLE4998 to the

application so the possible digital output range is matched to the magnetic input range that is available in the

application.

7.1 Two-Point Calibration Procedure

Position sensor modules are typically subject to production variations in terms of magnet strength and magnet

position, therefore it is recommended to do a two-point calibration of the TLE4998 after assembly of each module

to achieve the desired output characteristics independent of such production variations.

In order to configure an application specific output-characteristic, a two-point calibration procedure is used, where

the IC-internal representation HCAL (compare Figure 2-1) of the Hall measurement value is evaluated at two

defined positions and the output offset and gain are adjusted accordingly. This procedure is illustrated in

Figure 7-1.

Figure 7-1 Schematic of Two-Point Calibration

The 16bit value DOUT, which is transferred on the output protocol is calculated in the TLE4998 with the configured

offset (OS) and gain (G) value according to Equation (7.1).

(7.1)

For the two-point calibration, the following procedure is used:

1. Select two reference positions Pos1 and Pos2 for the moveable magnet in the application module. For

maximum accuracy of the calibration routine it is recommended that the desired signal difference between

these positions is at least half the full signal range.

2. Chose the desired output signals DOUT1’ and DOUT2’ which should correspond to positions Pos1 and Pos2

in the final configuration.

3. Fix the application module in position Pos1 and read the HCAL register via the programming interface. This

value is HCAL1.

DOUT [LSB16]

Position

~ Magnetic Flux (mT)

DOUT1'

DOU T 2 '

Pos 2 (B

)Pos 1 (B

)

application movement r ange

Max Output

(100%)

Min Output

(0 %)

65535

before 2 -point

calibration

after 2-point

calibration

~HCAL1

~HC AL 2

DOUT16bit

2 G 16384–()HCAL⋅⋅

4096

----------------------------------------------------------- 1 6 O S 1 6 3 8 4–()⋅+=

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4. Fix the application module in position Pos2 and read the HCAL register via the programming interface. This

value is HCAL2.

5. Calculate the according gain and offset parameters from the recorded HCAL1 and HCAL2 values and the

desired DOUT1’ and DOUT2’ values using Equation (7.2) and Equation (7.3).

(7.2)

(7.3)

6. Programm the gain (G) and offset (OS) values into the sensor’s EEPROM.

Attention: HCAL is a 16bit signed integer value ranging from -32768 to 32767. DOUT is a 16bit unsigned

integer value ranging from 0 to 65535.

7.2 Two-Point Calibration Examples

7.2.1 Calibration with Application Readout

Optimum accuracy of the TLE4998 can be achieved by using a two-point calibration with readout of the HCAL

registers in the application. The sensor’s output register HCAL is measured at the end points of the applications

range of motion and derive the optimum offset and gain parameters from the desired DOUT values. The registers

can be read using the TLE4998 Evaluation Kit.

Example

An example application has a linear movement range from x1 to x2. In both positions, the register value HCAL is

recorded.

In the application, it is desired to have the output value DOUT1’ = 3277 LSB16 (5% of full 16bit range) at position

x1 and DOUT2’ 62258 LSB16 (95% of full 16bit range) at position x2.

The measured HCAL and desired DOUT’ values are shown in Table 7-1.

Applying the HCAL and DOUT’ values from Table 7-1 in Equation (7.2) and Equation (7.3) yields:

G = 16384 + 2048 * (62258 - 3277) / (6203 - (-5435)) = 26763

OS = 16384 + (3277 - ((26763 - 16384) * (-5435)) / 2048) / 16 = 18310

This corresponds to a multiplicative gain of 2.53 and an offset of 47% ( = 1926 LSB12 = 30816 LSB16), according

to the formulas in Chapter 4.

Attention: If the measured HCAL values are close to the range limits -32768 or 32767, saturation takes

place. In this case, it is recommended to switch to a higher magnetic range (±100 or ±200 mT)

prior to the calibration.

Table 7-1 Example DOUT and HCAL values for 2-point calibration

Position measured

HCAL (Hex)

HCAL (Dec, signed)

Range -32768 to 32767

desired

DOUT’ (Hex)

DOUT’ (Dec)

Range 0 to 65535

x1EAC5H-5435 0CCDH3277

x2183BH6203 F332H62258

G 16384 2048 DOUT2' DOUT1'–

HCAL2 HCAL1–

--------------------------------------------------

⋅+=

OS 16384 DOUT1' G 16384–()HCAL1⋅()2048⁄–

--------------------------------------------------------------------------------------------------------+=

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7.2.2 Calibration without Application Readout

In case a readout of the sensor before calibration is not desired, the sensor can be roughly calibrated just from a

knowledge of the minimum and maximum magnetic flux values that occur in the application. In this case, the

calibration cannot compensate any variation of parameters due to production spread of sensor IC or application

module. The offset and gain are calculated only based on the minimum and maximum magnetic field in the

application.

Example

An example application has a minimum magnetic flux of Bmin = -25 mT and a maximum magnetic flux of Bmax = 75

mT, over the entire range of motion at room temperature. In the application module, these magnetic flux values

shall be mapped to 10% and 90% of the full output range (full 100% duty cycle for PWM versions or full 12bit or

16bit digital output for SENT and SPC versions).

The pre-calibrated gain value is 1.62 and the pre-calibrated offset value (= output at 0 mT magnetic flux) is 50%.

For the optimum configuration of the sensor for this application, the range is set to ± 100 mT (± 50 mT is not

suitable in this case, as Bmax is outside this range).

The sensitivity needs to be set in a way that the magnetic flux change from Bmin to Bmax results in an output value

change of 90% - 10% = 80%. The required sensitivity is

(OUT2 - OUT1) / (Bmax - Bmin) = 80% / 100 mT = 0.8 %/mT

The default sensitivity corresponding to the gain setting of 1.62 is 1.2 %/mT. To reach the desired sensitivity, the

gain needs to be lowered by a factor of 0.8/1.2 = 0.667. So the new gain setting to be programmed into the sensor

is 1.62 * 0.667 = 1.08.

The offset needs to be adapted accordingly, so the center value of the magnetic range corresponds to 50% of the

full output. In this example, the center of the magnetic range is:

Bcenter = (Bmax - Bmin) / 2 = 75mT - (-25 mT) / 2 = 25 mT

To find the optimum offset setting, the desired magnetic flux value value Bcenter which should correspond to 50%

output is multiplied by the gain and the resulting value is subtracted from 50%.

Thus, for this example the offset setting to be programmed in the sensor is: 50% - (25mT * 0.8 %/mT) = 30%

TLE4998

User’s Manual

User’s Manual 38 Rev. 1.3, 2018-02

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development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,

FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.

FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of

Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data

Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of

MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics

Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA

MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of

OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF

Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™

of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.

TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™

of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas

Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes

Zetex Limited.

Last Trademarks Update 2011-11-11

Revision History

Page or Item Subjects (major changes since previous revision)

Rev 1.3, 2018-02

Page 12 Added hardware version ID and hardware satus content for TLE4998C8(D) B2 design

Page 14 Updated Flowchart description to include hardware satus content for TLE4998C8(D) B2 design

Published by Infineon Technologies AG

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