IXYS 的 CS30-12io1 规格书

Single Thyristor 1 I . 2 a
CS30-12io1
Single Thyristor
Thyristor
2 1
3
Part number
CS30-12io1
Backside: anode
TAV
T
V V1,3
RRM
30
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
L-I IXYS csso-12io1 Symbol Delinikion Condikions min. lyp. max. iUniI
CS30-12io1
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1,30
R0,5 K/W
min.
30
VV
50T = 25°C
VJ
T = °C
VJ
mA2V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
120
P
tot
250 WT = 25°C
C
30
1200
forward voltage drop
total power dissipation
Unit
1,63
T = 25°C
VJ
125
V
T0
V0,87T = °C
VJ
150
r
T
14,2 mΩ
V1,30T = °C
VJ
I = A
T
V
30
1,71
I = A60
I = A60
threshold voltage
slope resistance for power loss calculation only
µA
125
VV1200T = 25°C
VJ
IA47
P
GM
Wt = 30 µs 10
max. gate power dissipation
P
T = °C
C
150
Wt = 5
P
P
GAV
W0,5
average gate power dissipation
C
J
16
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
150
400
430
580
555
A
A
A
A
340
365
800
770
1200
300 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
150repetitive, I =T
VJ
= 125 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 125°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = ⅔ V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
90 A
T
P
G
= 0,3
di /dt A/µs;
G
=0,3
DRM
cr
V = ⅔ V
DRM
GK
1000
1 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
55 mA
T = °C-40
VJ
1,2 V
80 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0,2 V
I
GD
gate non-trigger current
5 mA
V = ⅔ V
D DRM
125
latching current
T = °C
VJ
150 mA
I
L
25t µs
p
=10
I A;
G
= 0,3 di /dt A/µs
G
= 0,3
holding current
T = °C
VJ
100 mA
I
H
25V = 6 V
D
R = ∞
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 0,3 di /dt A/µs
G
= 0,3
V = ½ V
D DRM
turn-off time
T = °C
VJ
150 µs
t
q
di/dt = A/µs15 dv/dt = V/µs20
V =
R
100 V; I A;
T
= 30 V = ⅔ V
DRM
tµs
p
= 200
non-repet., I = 30 A
T
125
R
thCH
thermal resistance case to heatsink
K/W
Thyristor
1300
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
0,25
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
L-I IXYS csso-12io1 T0-247 Symbol Delinikion Condifions min. lyp. max. iUni! uc Ma ing
CS30-12io1
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
XXXXXXXXX
CS30-16io1 TO-247AD (3) 1600
Package
T
op
°C
M
D
Nm1,2
mounting torque
0,8
T
VJ
°C150
virtual junction temperature
-40
Weight g6
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N120
mounting force with clip
20
I
RMS
RMS current
70 A
per terminal
125-40
CLA30E1200HB TO-247AD (3) 1200
TO-247
Similar Part Package Voltage class
CS30-14io1 TO-247AD (3) 1400
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
CS30-12io1 466565Tube 30CS30-12io1Standard
T
stg
°C150
storage temperature
-40
threshold voltage
V0,87
mΩ
V
0 max
R
0 max
slope resistance *
11,7
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
CS30-12io1
CS30-12io1
S
ØPØ P1 D2
D1
E1
4
1 2 3
L
L1
2x b2
3x b
b4
2x e
2x E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.215 BSC 5.46 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
2 1
3
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved
L-I IXYS csso-12io1 [ ]
CS30-12io1
0,01 0,1 1
100
150
200
250
300
350
4
0
0
0,5 1,0 1,5 2,0
0
20
40
60
80
10
0
10
1
10
2
10
3
10
4
0,0
0,2
0,4
0,6
I
TSM
[A]
I
T
[
A]
V
T
[V]
t [ms]
Z
thJC
[K/W]
2 3 4 5 6 7 8 9 011
100
1
0
00
I
2
t
[A
2
s]
t [ms]
I
T(AV)M
[A]
T
C
[°C]
0 25 50 75 100 125 150
0
20
40
60
80
Fig. 1 Forward characteristics Fig. 3 I
2
t versus time (1-10 ms)
t [s]
Fig. 6 Max. forward current
at case temperature
Fig. 2 Surge overload current
Fig. 8 Transient thermal impedance junction to case
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
125°C
150°C
0 10 20 30 40
0
10
20
30
40
50
60
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
dc =
1
0.5
0.4
0.33
0.17
0.08
10 100 1000
1
10
100
1000
1 10 100 1000 10000
0,1
1
10
I
G
[mA]
V
G
[V]
t
gd
[µs]
I
G
[mA]
typ. Limit
T
VJ
= 125°C
Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
R
thHA
0.6
0.8
1.0
2.0
4.0
8.0
dc =
1
0.5
0.4
0.33
0.17
0.08
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
R
thi
[K/W] t
i
[s]
0.08 0.01
0.06 0.0001
0.2 0.02
0.05 0.2
0.11 0.11
6
5
4
3
2
1
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20150827bData according to IEC 60747and per semiconductor unless otherwise specified
© 2015 IXYS all rights reserved