Texas Instruments 的 ISO1211, ISO1212 规格书

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a) 8-Ch With ISO1212
TA= 25°C TA= 25°C
b) 8-Ch Traditional Solution Without Current Limit
24 V
RTHR
RSENSE
Field
Sensor/
Switch
ISO1211
IN
SENSE
OUT
FGND GND1
VCC1
PLC Digital Input Module
Host
Controller
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO1211
,
ISO1212
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ISO121x Isolated 24-V to 60-V Digital Input Receivers for Digital Input Modules
1
1 Features
1 Compliant to IEC 61131-2; Type 1, 2, 3
characteristics for 24-V isolated digital inputs
Supports 9-V to 300-V DC and AC digital input
designs using external resistors
Accurate Current Limit for Low-Power Dissipation:
2.2 mA to 2.47 mA for Type 3
Adjustable up to 6.5 mA
Eliminates the need for field-side power supply
High input-voltage range with reverse polarity
protection: ±60 V
Wire-break detection (refer to TIDA-01509)
Configurable as sourcing or sinking input
High data rates: up to 4 Mbps
Enable pin to multiplex output signals
High transient immunity: ±70-kV/µs CMTI
Wide supply range (VCC1): 2.25 V to 5.5 V
Ambient temperature range: –40°C to +125°C
Compact package options:
Single-channel ISO1211, SOIC-8
Dual-channel ISO1212, SSOP-16
Safety-Related Certifications:
Basic insulation per DIN VDE V 0884-11
UL 1577 recognition, 2500-VRMS insulation
IEC 60950-1, IEC 62368-1, IEC 61010-1 and
GB 4943.1-2011 certifications
2 Applications
Programmable Logic Controller (PLC)
Digital Input Modules
Mixed I/O Modules
Motor Drive I/O and Position Feedback
CNC Control
Data Acquisition
Binary Input Modules
3 Description
The ISO1211 and ISO1212 devices are isolated 24-V
to 60-V digital input receivers, compliant to IEC
61131-2 Type 1, 2, and 3 characteristics. These
devices enable 9-V to 300-V DC and AC digital input
modules in programmable logic controllers (PLCs),
motor-control, grid infrastructure, and other industrial
applications. Unlike traditional optocoupler solutions
with discrete, imprecise current limiting circuitry, the
ISO121x devices provide a simple, low-power
solution with an accurate current limit to enable the
design of compact and high-density I/O modules.
These devices do not require field-side power supply
and are configurable as sourcing or sinking inputs.
The ISO121x devices operate over the supply range
of 2.25 V to 5.5 V, supporting 2.5-V, 3.3-V, and 5-V
controllers. A ±60-V input tolerance with reverse
polarity protection helps ensure the input pins are
protected in case of faults with negligible reverse
current. These devices support up to 4-Mbps data
rates passing a minimum pulse width of 150 ns for
high-speed operation. The ISO1211 device is ideal
for designs that require channel-to-channel isolation
and the ISO1212 device is ideal for multichannel
space-constrained designs.
The ISO121x devices reduce component count,
simplify system design, improve performance, and
reduce board temperatures compared to traditional
solutions. For details, refer to the How To Simplify
Isolated 24-V PLC Digital Input Module Designs TI
TechNote,How To Improve Speed and Reliability of
Isolated Digital Inputs in Motor Drives TI TechNote,
and How to Design Isolated Comparators for ±48V,
110V and 240V DC and AC Detection TI TechNote.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
ISO1211 SOIC (8) 4.90 mm × 3.91 mm
ISO1212 SSOP (16) 4.90 mm × 3.90 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Application Diagram ISO121x Devices Reduce Board Temperatures vs
Traditional Solutions
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 4
6 Specifications......................................................... 6
6.1 Absolute Maximum Ratings ...................................... 6
6.2 ESD Ratings ............................................................ 6
6.3 Recommended Operating Conditions....................... 6
6.4 Thermal Information.................................................. 7
6.5 Power Ratings........................................................... 7
6.6 Insulation Specifications............................................ 8
6.7 Safety-Related Certifications..................................... 9
6.8 Safety Limiting Values ............................................ 10
6.9 Electrical Characteristics—DC Specification........... 11
6.10 Switching Characteristics—AC Specification........ 12
6.11 Insulation Characteristics Curves ......................... 13
6.12 Typical Characteristics.......................................... 14
7 Parameter Measurement Information ................ 15
7.1 Test Circuits ............................................................ 15
8 Detailed Description............................................ 18
8.1 Overview ................................................................. 18
8.2 Functional Block Diagram....................................... 18
8.3 Feature Description................................................. 18
8.4 Device Functional Modes........................................ 19
9 Application and Implementation ........................ 20
9.1 Application Information............................................ 20
9.2 Typical Application .................................................. 20
10 Power Supply Recommendations ..................... 31
11 Layout................................................................... 32
11.1 Layout Guidelines ................................................. 32
11.2 Layout Example .................................................... 32
12 Device and Documentation Support ................. 34
12.1 Device Support...................................................... 34
12.2 Documentation Support ........................................ 34
12.3 Related Links ........................................................ 34
12.4 Receiving Notification of Documentation Updates 34
12.5 Community Resource............................................ 34
12.6 Trademarks........................................................... 34
12.7 Electrostatic Discharge Caution............................ 35
12.8 Glossary................................................................ 35
13 Mechanical, Packaging, and Orderable
Information ........................................................... 35
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (August 2018) to Revision F Page
Changed VDE standard name From: DIN V VDE V 0884-10 To: DIN VDE V 0884-11 throughout the document............... 1
Changed Features bullet From: "CSA, CQC, TUV Certificates Available" To: "IEC 60950-1, IEC 62368-1, IEC
61010-1 and GB 4943.1-2011 certifications" ......................................................................................................................... 1
Updated Applications list ........................................................................................................................................................ 1
Changed ISO1211 'SUB' pin description text From: "Leave this pin unconnected on the board" To: "For good
thermal performance, it is recommended to connect this pin to a small 2 mm x 2 mm floating plane on the board. Do
not connect this floating plane to FGND or any other signal or plane." in Pin Functions table .......................................... 4
Changed ISO1212 'SUB1' and 'SUB2' pins description text From: "Leave this pin unconnected on the board" To:
"For good thermal performance, it is recommended to connect this pin to a small 2 mm x 2 mm floating plane on the
board. Do not connect this floating plane to FGND1, FGND2, SUBx or any other signal or plane." in Pin Functions
table ....................................................................................................................................................................................... 5
Updated certification information in Safety-Related Certifications table................................................................................. 9
Changes from Revision D (March 2018) to Revision E Page
Changed VIH and VIH to VIL and VIH in the RTHR resistor description in the Setting Current Limit and Voltage
Thresholds section................................................................................................................................................................ 22
Changes from Revision C (February 2018) to Revision D Page
Updated the Features and Applications sections. Added a new TI TechNote reference to the Description and
Related Documentation section.............................................................................................................................................. 1
Changed the unit for CPG from µm to mm in the Insulation Specifications table.................................................................. 8
Changed the Functional Block Diagram............................................................................................................................... 18
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Changed VIL from min to typ in the VIL equation .................................................................................................................. 23
Added the Designing for Input Voltages Greater Than 60 V section ................................................................................... 25
Added the bidirectional implementation example to the Sourcing and Sinking Inputs section ............................................ 31
Changes from Revision B (September 2017) to Revision C Page
Added wire-break detection to the Features section.............................................................................................................. 1
Added the enable pin to mutiplex output signals to the Features section.............................................................................. 1
Changed RTHR = 5 kΩto 4 kΩin the High-Level Voltage Transition Threshold vs Ambient Temperature graph................ 14
Changed the Type 1 RTH value from 3 kΩto 2.5 kΩin the Surge, IEC ESD and EFT table............................................... 26
Changes from Revision A (September 2017) to Revision B Page
Changed the status from Advance Information to Production Data....................................................................................... 1
l TEXAS INSTRUMENTS C j C 3 Cl» 3 C :
Basic Isolation
ILIM
1
VCC1 8SENSE
7IN
6FGND
5SUB
4
GND1
3
OUT
2
EN
4
ISO1211
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ISO1212
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5 Pin Configuration and Functions
ISO1211 D Package
8-Pin SOIC
Top View
Pin Functions
PIN I/O DESCRIPTION
NO. NAME
1 VCC1 Power supply, side 1
2 EN I Output enable. The output pin on side 1 is enabled when the EN pin is high or open. The output pin on
side 1 is in the high-impedance state when the EN pin is low. In noisy applications, tie the EN pin to
VCC1.
3 OUT O Channel output
4 GND1 Ground connection for VCC1
5 SUB Internal connection to input chip substrate. For good thermal performance, it is recommended to
connect this pin to a small 2 mm x 2 mm floating plane on the board. Do not connect this floating plane
to FGND or any other signal or plane.
6 FGND Field-side ground
7 IN I Field-side current input
8 SENSE I Field-side voltage sense
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ISO1212 DBQ Package
16-Pin SSOP
Top View
Pin Functions
PIN I/O Description
NO. NAME
1 GND1 Ground connection for VCC1
2 VCC1 Power supply, side 1
3 EN I Output enable. The output pins on side 1 are enabled when the EN pin is high or open. The output
pins on side 1 are in the high-impedance state when the EN pin is low. In noisy applications, tie the EN
pin to VCC1.
4 OUT1 O Channel 1 output
5 OUT2 O Channel 2 output
6NC Not connected
7
8 GND1 Ground connection for VCC1
9 FGND2 Field-side ground, channel 2
10 IN2 I Field-side current input, channel 2
11 SENSE2 I Field-side voltage sense, channel 2
12 SUB2 Internal connection to input chip 2 substrate. For good thermal performance, it is recommended to
connect this pin to a small 2 mm x 2 mm floating plane on the board. Do not connect this floating plane
to FGND1, FGND2, SUB1 or any other signal or plane.
13 SUB1 Internal connection to input chip 1 substrate. For good thermal performance, it is recommended to
connect this pin to a small 2 mm x 2 mm floating plane on the board. Do not connect this floating plane
to FGND1, FGND2, SUB2 or any other signal or plane.
14 FGND1 Field-side ground, channel 1
15 IN1 I Field-side current input, channel 1
16 SENSE1 I Field-side voltage sense, channel 1
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Maximum voltage must not exceed 6 V.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC1 Supply voltage, control side –0.5 6 V
VOUTx,
VEN Voltage on OUTx pins and EN pin –0.5 VCC1 + 0.5(2) V
IOOutput current on OUTx pins –15 15 mA
VINx, VSENSEx Voltage on IN and SENSE pins –60 60 V
V(ISO,FUNC) Functional isolation between channels in ISO1212 on the field side –60 60 V
TJJunction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) See the Thermal Considerations section.
6.3 Recommended Operating Conditions
MIN MAX UNIT
VCC1 Supply voltage input side 2.25 5.5 V
VINx,
VSENSEx Voltage on INx and SENSEx pins(1) –60 60 V
IOH High-level output current from OUTx pin
VCC1 = 5 V –4
mAVCC1 = 3.3 V –3
VCC1 = 2.5 V –2
IOL Low-level output current into OUTx pin
VCC1 = 5 V 4
mAVCC1 = 3.3 V 3
VCC1 = 2.5 V 2
tUI Minimum pulse width at SENSEx pins 150 ns
TAAmbient temperature –40 125 °C
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(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.4 Thermal Information
THERMAL METRIC(1)
ISO1211 ISO1212
UNITD (SOIC) DBQ (SSOP)
8 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 146.1 116.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 63.1 56.5 °C/W
RθJB Junction-to-board thermal resistance 80 64.7 °C/W
ΨJT Junction-to-top characterization parameter 9.6 27.9 °C/W
ΨJB Junction-to-board characterization parameter 79 64.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance °C/W
6.5 Power Ratings
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISO1211
PDMaximum power dissipation, both sides VSENSE = 60 V, VCC1 = 5.5 V, RSENSE = 200 Ω,
RTHR = 0 Ω, TJ= 150°C 450 mW
PD1 Maximum power dissipation, output side
(side 1) VCC1 = 5.5 V, CL= 15 pF, Input 2-MHz 50% duty-
cycle square wave at SENSE pin, TJ= 150°C 20 mW
PD2 Maximum power dissipation, field input
side VSENSE = 60 V, VCC1 = 5.5 V, RSENSE = 200 Ω,
RTHR = 0 Ω, TJ= 150°C 430 mW
ISO1212
PDMaximum power dissipation, both sides VSENSEx = 60 V, VCC1 = 5.5 V, RSENSE = 200 Ω,
RTHR = 0 Ω, TJ= 150°C 900 mW
PD1 Maximum power dissipation, output side
(side 1) VCC1 = 5.5 V, CL= 15 pF, Input 2-MHz 50% duty-
cycle square wave at SENSEx pins, TJ= 150°C 40 mW
PD2 Maximum power dissipation, field input
side VSENSEx = 60 V, VCC1 = 5.5 V, RSENSE = 200 Ω,
RTHR = 0 Ω, TJ= 150°C 860 mW
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(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care
should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on
the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications.
(2) This coupler is suitable for basic electrical insulation only within the maximum operating ratings. Compliance with the safety ratings shall
be ensured by means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier tied together creating a two-terminal device
6.6 Insulation Specifications
PARAMETER TEST CONDITIONS SPECIFICATION UNIT
D-8 DBQ-16
CLR External clearance(1) Shortest terminal-to-terminal distance through air 4 3.7 mm
CPG External Creepage(1) Shortest terminal-to-terminal distance across the
package surface 4 3.7 mm
DTI Distance through the insulation Minimum internal gap (internal clearance) 10.5 10.5 µm
CTI Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 > 600 > 600 V
Material Group According to IEC 60664-1 I I
Overvoltage category Rated mains voltage 150 VRMS I-IV I-IV
Rated mains voltage 300 VRMS I-III I-III
DIN VDE V 0884-11:2017-01(2)
VIORM Maximum repetitive peak isolation
voltage AC voltage (bipolar) 566 566 VPK
VIOWM Maximum working isolation voltage
AC voltage (sine wave); time-dependent dielectric
breakdown (TDDB) test 400 400 VRMS
DC voltage 566 566 VDC
VIOTM Maximum transient isolation voltage VTEST = VIOTM, t = 60 s (qualification),
VTEST = VIOTM, t= 1 s (100% production) 3600 3600 VPK
VIOSM Maximum surge isolation voltage(3) Test method per IEC 60065-1, 1.2/50 µs
waveform,
VTEST = 1.3 × VIOSM = 5200 VPK (qualification) 4000 4000 VPK
qpd Apparent charge(4)
Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 680 VPK, tm= 10 s < 5 < 5
pC
Method a: After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.3 × VIORM = 736 VPK, tm= 10 s < 5 < 5
Method b1: At routine test (100% production) and
preconditioning (type test),
Vini = VIOTM, tini = 1 s;
Vpd(m) = 1.5 × VIORM = 849 VPK, tm= 10 s
< 5 < 5
CIO Barrier capacitance, input to output(5) VIO = 0.4 × sin (2 πft), f = 1 MHz 440 560 fF
RIO Insulation resistance, input to
output(5)
VIO = 500 V, TA= 25°C > 1012 > 1012
ΩVIO = 500 V, 100°C TA125 °C > 1011 > 1011
VIO = 500 V at TS= 150 °C > 109> 109
Pollution degree 2 2
Climatic category 40/125/21 40/125/21
UL 1577
VISO Withstand isolation voltage VTEST = VISO = 2500 VRMS, t = 60 s (qualification);
VTEST = 1.2 × VISO = 3000 VRMS, t = 1 s (100%
production) 2500 2500 VRMS
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6.7 Safety-Related Certifications
VDE CSA UL CQC TUV
Certified according to
DIN VDE V 0884-
11:2017-01 and DIN
EN 61010-1 (VDE
0411-1):2011-07
Certified according to IEC
60950-1 and IEC 62368-1
Recognized under UL
1577 Component
Recognition Program
Certified according to
GB4943.1-2011
Certified according to EN
61010-1:2010/A1:2019, EN
60950-1:2006/A2:2013 and
EN 62368-1:2014
Basic Insulation,
Maximum Transient
Isolation Voltage, 3600
VPK,
Maximum Repetitive
Peak Isolation Voltage,
566 VPK,
Maximum Surge
Isolation Voltage, 4000
VPK
370 VRMS (ISO1212) and
400 VRMS (ISO1211)
Basic Insulation working
voltage per CSA 60950-1-
07+A1 + A2 and IEC
60950-1 2nd Ed. + A1 +
A2
300 VRMS Basic Insulation
working voltage per CSA
62368-1-14 and IEC
62368-1 2nd Ed.
Single protection, 2500
VRMS
Basic Insulation, Altitude
5000m, Tropical Climate,
400 VRMS maximum working
voltage
Basic insulation per EN
61010-1:2010/A1:2019 up
to working voltage of 300
VRMS,
Basic insulation per EN
60950-1:2006/A2:2013 and
EN 62368-1:2014 up to
working voltage of 370
VRMS (ISO1212) and 400
VRMS (ISO1211)
Certificate number:
40047657 Master contract number:
220991 File number: E181974 Certificate number:
CQC15001121656(ISO1211)
CQC18001199097(ISO1212) Client ID number: 77311
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(1) The safety-limiting constraint is the maximum junction temperature specified in the data sheet. The power dissipation and junction-to-air
thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air
thermal resistance in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount
packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient
temperature plus the power times the junction-to-air thermal resistance.
6.8 Safety Limiting Values
Safety limiting(1) intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure
of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat
the die and damage the isolation barrier, potentially leading to secondary system failures.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISO1211
ISSafety input, output, or supply
current - side 1
RθJA = 146.1°C/W, VI= 2.75 V, TJ= 150°C,
TA= 25°C, see Figure 1 310
mA
RθJA = 146.1°C/W, VI= 3.6 V, TJ= 150°C,
TA= 25°C, see Figure 1 237
RθJA = 146.1°C/W, VI= 5.5 V, TJ= 150°C,
TA= 25°C, see Figure 1 155
ISSafety input current - field side
RθJA = 146.1°C/W, VI= 24 V, TJ= 150°C,
TA= 25°C, see Figure 1 35
mA
RθJA = 146.1°C/W, VI= 36 V, TJ= 150°C,
TA= 25°C, see Figure 1 23
RθJA = 146.1°C/W, VI= 60 V, TJ= 150°C,
TA= 25°C, see Figure 1 14
PSSafety input, output, or total
power RθJA = 146.1°C/W, TJ= 150°C, TA= 25°C,
see Figure 2 855 mW
TSMaximum safety temperature 150 °C
ISO1212
ISSafety input, output, or supply
current - side 1
RθJA = 116.9°C/W, VI= 2.75 V, TJ= 150°C,
TA= 25°C, see Figure 3 389
mA
RθJA= 116.9°C/W, VI= 3.6 V, TJ= 150°C,
TA= 25°C, see Figure 3 297
RθJA = 116.9°C/W, VI= 5.5 V, TJ= 150°C,
TA= 25°C, see Figure 3 194
ISSafety input current - field side
RθJA = 116.9°C/W, VI= 24 V, TJ= 150°C,
TA= 25°C, see Figure 3 44
mA
RθJA= 116.9°C/W, VI= 36 V, TJ= 150°C,
TA= 25°C, see Figure 3 29
RθJA = 116.9°C/W, VI= 60 V, TJ= 150°C,
TA= 25°C, see Figure 3 17
PSSafety input, output, or total
power RθJA = 116.9°C/W, TJ= 150°C, TA= 25°C,
see Figure 4 1070 mW
TSMaximum safety temperature 150 °C
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(1) See the Thermal Considerations section.
6.9 Electrical Characteristics—DC Specification
(Over recommended operating conditions unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC1 VOLTAGE SUPPLY
VIT+ (UVLO1) Positive-going UVLO threshold voltage
(VCC1)2.25 V
VIT– (UVLO1) Negative-going UVLO threshold (VCC1) 1.7 V
VHYS (UVLO1) UVLO threshold hysteresis (VCC1) 0.2 V
ICC1 VCC1 supply
quiescent current
ISO1211 EN = VCC1 0.6 1 mA
ISO1212 1.2 1.9
LOGIC I/O
VIT+ (EN) Positive-going input logic threshold
voltage for EN pin 0.7 ×
VCC1 V
VIT– (EN) Negative-going input logic threshold
voltage for EN pin 0.3 ×
VCC1 V
VHYS(EN) Input hysteresis voltage for EN pin 0.1 ×
VCC1 V
IIH Low-level input leakage at EN pin EN = GND1 –10 μA
VOH High-level output voltage on OUTx VCC1 = 4.5 V; IOH = –4 mA
VCC1 = 3 V; IOH = –3 mA
VCC1= 2.25 V; IOH = –2 mA, see Figure 10
VCC1
– 0.4 V
VOL Low-level output voltage on OUTx VCC1 = 4.5 V; IOH = 4 mA
VCC1 = 3 V; IOH = 3 mA
VCC1= 2.25 V ; IOH = 2 mA, see Figure 10 0.4 V
CURRENT LIMIT
I(INx+SENSEx),
TYP
Typical sum of current drawn from IN
and SENSE pins across temperature RTHR = 0 Ω, RSENSE = 562 Ω, VSENSE = 24 V,
–40°C < TA< 125°C, see Figure 11 2.2 2.47 mA
I(INx+SENSEx) Sum of current drawn from IN and
SENSE pins
RTHR = 0 Ω, RSENSE = 562 Ω± 1%;
–60 V < VSENSE < 0 V, see Figure 11 –0.1 µA
RTHR = 0 Ω, RSENSE = 562 Ω± 1%;
5 V < VSENSE < VIL, see Figure 11 1.9 2.5
mA
RTHR = 0 Ω, RSENSE = 562 Ω± 1%;
VIL < VSENSE < 30 V, see Figure 11 2.05 2.75
RTHR = 0 Ω, RSENSE = 562 Ω± 1%;
30 V < VSENSE < 36 V, see Figure 11 2.1 2.83
RTHR = 0 Ω, RSENSE = 562 Ω± 1%;
36 V < VSENSE < 60 V(1), see Figure 11 2.1 3.1
RTHR = 0 Ω, RSENSE = 200 Ω± 1%;
–60 V < VSENSE < 0 V, see Figure 11 –0.1 µA
RTHR = 0 Ω, RSENSE = 200 Ω± 1%;
5 V < VSENSE < VIL, see Figure 11 5.3 6.8
mA
RTHR = 0 Ω, RSENSE = 200 Ω± 1%;
VIL < VSENSE < 36 V(1), see Figure 11 5.5 7
RTHR = 0 Ω, RSENSE = 200 Ω± 1%;
36 V < VSENSE < 60 V(1), see Figure 11 5.5 7.3
l TEXAS INSTRUMENTS
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Electrical Characteristics—DC Specification (continued)
(Over recommended operating conditions unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOLTAGE TRANSITION THRESHOLD ON FIELD SIDE
VIL Low level threshold voltage at module
input (including RTHR) for output low
RSENSE = 562 Ω, RTHR = 0 Ω, see Figure 11 6.5 7
VRSENSE = 562 Ω, RTHR = 1 kΩ, see Figure 11 8.7 9.2
RSENSE = 562 Ω, RTHR = 4 kΩ, see Figure 11 15.2 15.8
VIH High level threshold voltage at module
input (including RTHR) for output high
RSENSE = 562 Ω, RTHR = 0 Ω, see Figure 11 8.2 8.55
VRSENSE = 562 Ω, RTHR = 1 kΩ, see Figure 11 10.4 10.95
RSENSE = 562 Ω, RTHR = 4 kΩ, see Figure 11 17 18.25
VHYS Threshold voltage hysteresis at module
input
RSENSE = 562 Ω, RTHR = 0 Ω, see Figure 11 1 1.2
VRSENSE = 562 Ω, RTHR = 1 kΩ, see Figure 11 1 1.2
RSENSE = 562 Ω, RTHR = 4 kΩ, see Figure 11 1 1.2
6.10 Switching Characteristics—AC Specification
(Over recommended operating conditions unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tr, tfOutput signal rise and fall time,
OUTx pins Input rise and fall times = 10 ns, see Figure 10 3 ns
tPLH Propagation delay time for low to
high transition Input rise and fall times = 10 ns, see Figure 10 110 140 ns
tPHL Propagation delay time for high
to low transition Input rise and fall times = 10 ns, see Figure 10 10 15 ns
tsk(p) Pulse skew |tPHL - tPLH| Input rise and fall times = 10 ns, see Figure 10 102 130 ns
tUI Minimum pulse width Input rise and fall times = 125 ns, see Figure 10 150 ns
tPHZ Disable propagation delay, high-
to-high impedance output See Figure 13 17 40 ns
tPLZ Disable propagation delay, low-
to-high impedance output See Figure 12 17 40 ns
tPZH Enable propagation delay, high
impedance-to-high output See Figure 13 3 8.5 µs
tPZL Enable propagation delay, high
impedance-to-low output See Figure 12 17 40 ns
CMTI Common mode transient
immunity See Figure 14 25 70 kV/µs
l TEXAS INSTRUMENTS 350 suu 450 1200
Ambient Temperature (qC)
Safety Limiting Current (mA)
0 50 100 150 200
0
50
100
150
200
250
300
350
400
450
D003
VCC1 = 2.75 V
VCC1 = 3.6 V
VCC1 = 5.5 V
VINx = 24 V
VINx = 36 V
VINx = 60 V
Ambient Temperature (qC)
Safety Limiting Power (mW)
0 50 100 150 200
0
200
400
600
800
1000
1200
D004
Ambient Temperature (qC)
Safety Limiting Current (mA)
0 50 100 150 200
0
50
100
150
200
250
300
350
D001
VCC1 = 2.75 V
VCC1 = 3.6 V
VCC1 = 5.5 V
VINx = 24 V
VINx = 36 V
VINx = 60 V
Ambient Temperature (qC)
Safety Limiting Power (mW)
0 50 100 150 200
0
100
200
300
400
500
600
700
800
900
D002
13
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6.11 Insulation Characteristics Curves
Figure 1. Thermal Derating Curve for Safety Limiting
Current per VDE for D-8 Package Figure 2. Thermal Derating Curve for Safety Limiting Power
per VDE for D-8 Package
Figure 3. Thermal Derating Curve for Safety Limiting
Current per VDE for DBQ-16 Package Figure 4. Thermal Derating Curve for Safety Limiting Power
per VDE for DBQ-16 Package
l TEXAS INSTRUMENTS
Input Voltage (V)
Input Current (mA)
0 10 20 30 40 50 60 70
0
1
2
3
4
5
6
7
D009
40qC
25qC
85qC
105qC
115qC
125qC
Temperature (qC)
High-Level Threshold Voltage (V)
-50 -30 -10 10 30 50 70 90 110 130
7
8
9
10
11
12
13
14
15
16
17
18
19
20
D007
RTHR = 0 k:
RTHR = 1 k:
RTHR = 2 k:
RTHR = 3 k:
RTHR = 4 k:
Temperature (qC)
Low-Level Threshold Voltage (V)
-50 -30 -10 10 30 50 70 90 110 130
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
D008
RTHR = 0 k:
RTHR = 1 k:
RTHR = 2 k:
RTHR = 3 k:
RTHR = 4 k:
Input Voltage (V)
Input Current (mA)
30 35 40 45 50 55 60
2
2.25
2.5
2.75
3
D006
40qC
25qC
85qC
105qC
115qC
125qC
Input Voltage (V)
Input Current (mA)
0 5 10 15 20 25 30
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
±40°C
25°C
85°C
105°C
115°C
125°C
ON = 8.25 V
OFF = 7.1 V
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6.12 Typical Characteristics
RSENSE = 562 RTHR = 0 Ω
Figure 5. Input Current vs Input Voltage
RSENSE = 562 RTHR = 0 Ω
Figure 6. Input Current vs Input Voltage
RSENSE = 562
Figure 7. High-Level Voltage Transition Threshold vs
Ambient Temperature
RSENSE = 562
Figure 8. Low-Level Voltage Transition Threshold vs
Ambient Temperature
RSENSE = 200 ΩRTHR = 0 Ω
Figure 9. Input Current vs Input Voltage
‘5‘ TEXAS INSTRUMENTS L!
ILIM
SENSE
IN
OUT
Capacitive
Isolation
RSENSE
RTHR
FGND
GND1
VCC1
100 nF
CL
15 pF
Signal
Generator
VO
VI
I(Inx+SENSEx)
ILIM
SENSE
IN
OUT
Capacitive
Isolation
RSENSE
FGND
GND1
VCC1
100 nF
CL
15 pF
Signal
Generator
VO
VI
VO
VI
VOL
VOH
18 V
0 V
trtf
tPLH tPHL
50% 50%
50% 50%
90%
10%
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7 Parameter Measurement Information
7.1 Test Circuits
Figure 10. Switching Characteristics Test Circuit and Voltage Waveforms
Figure 11. Input Current and Voltage Threshold Test Circuit
‘5‘ TEXAS INSTRUMENTS LT
ILIM
SENSE
IN
OUT
Capacitive
Isolation
RSENSE
FGND
GND1
VCC1
CL
15 pF
VO
RL
1 k
Signal
Generator 50
VI
0 V
VO
VI
tPZL
VCC1 / 2
50%
VCC1
VCC1 / 2
VOH
0 V
VOL
tPLZ
0.5 V
EN1
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Test Circuits (continued)
Figure 12. Enable and Disable Propagation Delay Time Test Circuit and Waveform—Logic Low State
‘5‘ TEXAS INSTRUMENTS
+ VCM ±
ILIM
SENSE
IN
OUT
Capacitive
Isolation
RSENSE
FGND
+
±
24 V
S1
FGND
GND1
GND1
VCC1
100 nF
CL
15 pF
VOH or VOL
ILIM
SENSE
IN
OUT
Capacitive
Isolation
RSENSE
FGND
24 V
GND1
VCC1
CL
15 pF
VO
RL
1 k
Signal
Generator 50
VI
VO
VI
tPZH
VCC1 / 2
50%
VCC1
VCC1 / 2
VOH
0 V
0 V
tPHZ
0.5 V
EN1
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Test Circuits (continued)
Figure 13. Enable and Disable Propagation Delay Time Test Circuit and Waveform—Logic High State
(1) Pass Criterion: The output must remain stable.
Figure 14. Common-Mode Transient Immunity Test Circuit
‘5‘ TEXAS INSTRUMENTS
RTHR
RSENSE IN
SENSE
OUT
FGND
CURRENT
LIMIT
INPUT
ISOLATION
REF
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8 Detailed Description
8.1 Overview
The ISO1211 and ISO1212 devices are fully-integrated, isolated digital-input receivers with IEC 61131-2 Type 1,
2, and 3 characteristics. The devices receive 24-V to 60-V digital-input signals and provide isolated digital
outputs. No field-side power supply is required. An external resistor, RSENSE, on the input-signal path precisely
sets the limit for the current drawn from the field input based on an internal feedback loop. The voltage transition
thresholds are compliant with Type 1, 2, and 3 and can be increased further using an external resistor, RTHR. For
more information on selecting the RSENSE and RTHR resistor values, see the Detailed Design Procedure section.
The ISO121x devices use an ON-OFF keying (OOK) modulation scheme to transmit the digital data across a
silicon-dioxide based isolation barrier. The transmitter sends a high frequency carrier across the barrier to
represent one digital state and sends no signal to represent the other digital state. The receiver demodulates the
signal after advanced signal conditioning and produces the output through a buffer stage. The conceptual block
diagram of the ISO121x device is shown in the Functional Block Diagram section.
8.2 Functional Block Diagram
8.3 Feature Description
The ISO121x devices receive 24-V to 60-V digital input signals and provide isolated digital outputs. An external
resistor, RSENSE, connected between the INx and SENSEx pins, sets the limit for the current drawn from the field
input. Internal voltage comparators connected to the SENSEx pins determine the input-voltage transition
thresholds.
The output buffers on the control side are capable of providing enough current to drive status LEDs. The EN pin
is used to enable the output buffers. A low state on the EN pin puts the output buffers in a high-impedance state.
The ISO121x devices are capable of operating up to 4 Mbps. Both devices support an isolation withstand voltage
of 2500 VRMS between side 1 and side 2. Table 1 provides an overview of the device features.
Table 1. Device Features
PART NUMBER CHANNELS MAXIMUM DATA RATE PACKAGE RATED ISOLATION
ISO1211 1 4 Mbps 8-pin SOIC (D) 2500 VRMS,
3600 VPK
ISO1212 2 4 Mbps 16-pin SSOP (DBQ) 2500 VRMS,
3600 VPK
l TEXAS INSTRUMENTS
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(1) VCC1 = Side 1 power supply; PU = Powered up (VCC1 2.25 V); PD = Powered down (VCC1 1.7 V); X = Irrelevant; H = High level; L =
Low level; Z = High impedance
(2) The outputs are in an undetermined state when 1.7 V < VCC1 < 2.25 V.
8.4 Device Functional Modes
Table 2 lists the functional modes for the ISO121x devices.
Table 2. Function Table(1)
SIDE 1 SUPPLY
VCC1
INPUT
(INx, SENSEx) OUTPUT ENABLE
(EN) OUTPUT
(OUTx) COMMENTS
PU
H H or Open H Channel output assumes the logic state of channel
input.
L H or Open L
Open H or Open L When INx and SENSEx are open, the output of the
corresponding channel goes to Low.
X L Z A low value of output enable causes the outputs to
be high impedance.
PD X X Undetermined
When VCC1 is unpowered, a channel output is
undetermined(2). When VCC1 transitions from
unpowered to powered up; a channel output
assumes the logic state of the input.
l TEXAS INSTRUMENTS Type ‘ Type 2 Type 3 \ “A. _l “N I‘,‘ m
Type 1 Type 2 Type 3
ON
30
25
20
15
10
5
0
±3
0 5 10 15
IIN (mA)
VIN (V)
OFF
ON
30
25
20
15
10
5
0
±3
0 5 10 15
IIN (mA)
VIN (V)
20 25 30
OFF
ON
30
25
20
15
10
5
0
±3
0 5 10 15
IIN (mA)
VIN (V)
OFF
20
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The ISO1211 and ISO1212 devices are fully-integrated, isolated digital-input receivers with IEC 61131-2 Type 1,
2, and 3 characteristics. These devices are suitable for high-channel density, digital-input modules for
programmable logic controllers and motor control digital input modules. The devices receive 24-V to 60-V digital-
input signals and provide isolated digital outputs. No field side power supply is required. An external resistor,
RSENSE, on the input signal path precisely sets the limit for the current drawn from the field input. This current limit
helps minimize power dissipated in the system. The current limit can be set for Type 1, 2, or 3 operation. The
voltage transition thresholds are compliant with Type 1, 2, and 3 and can be increased further using an external
resistor, RTHR. For more information on selecting the RSENSE and RTHR resistor values, see the Detailed Design
Procedure section. The ISO1211 and ISO1212 devices are capable of high speed operation and can pass
through a minimum pulse width of 150 ns. The ISO1211 device has a single receive channel. The ISO1212
device has two receive channels that are independent on the field side.
Figure 15. Switching Characteristics for IEC61131-2 Type 1, 2, and 3 Proximity Switches
9.2 Typical Application
9.2.1 Sinking Inputs
Figure 16 shows the design for a typical multichannel, isolated digital-input module with sinking inputs. Push-
button switches, proximity sensors, and other field inputs connect to the host controller through an isolated
interface. The design is easily scalable from a few channels, such as 4 or 8, to many channels, such as 256 or
more. The RSENSE resistor limits the current drawn from the input pins. The RTHR resistor is used to adjust the
voltage thresholds and limit the peak current during surge events. The CIN capacitor is used to filter noise on the
input pins. For more information on selecting RSENSE, RTHR, and CIN, see the Detailed Design Procedure section.
The ISO121x devices derive field-side power from the input pins which eliminates the requirement for a field-
side, 24-V input power supply to the module. Similarly, an isolated dc-dc converter creating a field-side power
supply from the controller side back plane supply is also eliminated which improves flexibility of system design
and reduces system cost.
For systems requiring channel-to-channel isolation on the field side, use the ISO1211 device as shown in
Figure 17.
l TEXAS INSTRUMENTS
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
FGND2
FGND1
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
FGND2
FGND1
Host
Controller
GND1
GND1
Power
Supply
24 V
0 V
VCC1
VCC1
VCC
GND
5 V or 3.3 V or 2.5 V
Backplane supply
RSENSE
RTHR
CIN
RSENSE
RTHR
CIN
RSENSE
RTHR
CIN
RSENSE
RTHR
CIN
500 pF/2 kV
PLC Digital Input Module
Field Side PLC
Protection
Earth (PE)
Field Ground
(FGND)
Sensors and
Switches
Copyright © 2017, Texas Instruments Incorporated
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Typical Application (continued)
Figure 16. Typical Application Schematic With Sinking Inputs
l TEXAS INSTRUMENTS 5vor33vor25v | 2.25mA 562 L — 2.25 mA 562 SENSE
IH THR
SENSE
2.25 mA 562
V (typ) 8.25 V R R
u :
u
L
SENSE
2.25 mA 562
I
R
u :
ISO1211
IN
SENSE
OUT
FGND
Host
Controller
GND1
VCC1 VCC
5 V or 3.3 V or 2.5 V
Backplane Supply
ISO1211
IN
SENSE
OUT
FGND GND1
VCC1
GND
24 V
Copyright © 2017, Texas Instruments Incorporated
RSENSE
RTHR
CIN
+
±
24 V
RSENSE
RTHR
CIN
+
±
22
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Typical Application (continued)
Figure 17. Single-Channel or Channel-to-Channel Isolated Designs With ISO1211
9.2.1.1 Design Requirements
The ISO121x devices require two resistors, RTHR and RSENSE, and a capacitor, CIN, on the field side. For more
information on selecting RSENSE, RTHR, and CIN, see the Detailed Design Procedure section. A 100-nF decoupling
capacitor is required on VCC1.
9.2.1.2 Detailed Design Procedure
9.2.1.2.1 Setting Current Limit and Voltage Thresholds
The RSENSE resistor limits the current drawn from the field input. A value of 562 Ωfor RSENSE is recommended for
Type 1 and Type 3 operation, and results in a current limit of 2.25 mA (typical). A value of 200 Ωfor RSENSE is
recommended for Type 2 operation, and results in a current limit of 6 mA (typical). In each case, a (slightly) lower
value of RSENSE can be selected based on the need for a higher current limit or component availability. For more
information, see the Electrical Characteristics—DC Specification table and Typical Characteristics section. A 1%
tolerance is recommended on RSENSE but 5% resistors can also be used if higher variation in the current limit
value is acceptable. The relationship between the RSENSE resistor and the typical current limit (IL) is given by
Equation 1.
(1)
The RTHR resistor sets the voltage thresholds (VIL and VIH) as well as limits the surge current. A value of 1 kΩis
recommended for RTHR in Type 3 systems (maximum threshold voltage required is 11 V). A value of 2.5 kΩis
recommended for RTHR in Type 1 systems (maximum threshold voltage required is 15 V) and a value of 330 Ωis
recommended for RTHR in Type 2 systems. The Electrical Characteristics—DC Specification table lists and the
Typical Characteristics section describes the voltage thresholds with different values of RTHR. For other values of
RTHR, derive the values through linear interpolation. Use Equation 2 and Equation 3 to calculate the values for
the typical VIH values and minimum VIL values, respectively.
(2)
l TEXAS INSTRUMENTS 2.1 mA 562 SENSE 275
Input Voltage (V)
Input Current (mA)
0 5 10 15 20 25 30
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
±40°C
25°C
85°C
105°C
115°C
125°C
ON = 8.25 V
OFF = 7.1 V
IN THR
SENSE
2.1mA 562
V (max) 60 V R R
u :
u
IL THR
SENSE
2.25 mA 562
V (typ) 7.1 V R R
u :
u
23
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Typical Application (continued)
(3)
The maximum voltage on the SENSE pins of the ISO121x device is 60 V. However, because the RTHR resistor
drops additional voltage, the maximum voltage supported at the module inputs is higher and given by Equation 4.
(4)
Use the ISO121x Threshold Calculator for 9V to 300V DC and AC Voltage Detection to estimate the values of
the voltage transition thresholds, the maximum-allowed module input voltage, and module input current for the
given values of the RSENSE and RTHR resistors.
A value of 0 Ωfor RTHR also meets Type 1, Type 2 and Type 3 voltage-threshold requirements. The value of
RTHR should be maximized for best EMC performance while meeting the desired input voltage thresholds.
Because RTHR is used to limit surge current, 0.25 W MELF resistors must be used.
Figure 18 shows the typical input current characteristics and voltage transition thresholds for 562-ΩRSENSE and
1-kΩRTHR.
Figure 18. Transition Thresholds
9.2.1.2.2 Thermal Considerations
Thermal considerations constrain operation at different input current and voltage levels. The power dissipated
inside the ISO121x devices is determined by the voltage at the SENSE pin (VSENSE) and the current drawn by the
device (I(INx+SENSEx)). The internal power dissipated, when taken with the junction-to-air thermal resistance defined
in the Thermal Information table can be used to determine the junction temperature for a given ambient
temperature. The junction temperature must not exceed 150°C.
Figure 19 shows the maximum allowed ambient temperature for the ISO1211 device for different current limit and
input voltage conditions. The ISO1211 device can be used with a VSENSE voltage up to 60 V and an ambient
temperature of up to 125°C for an RSENSE value of 562 , which corresponds to a typical current limit of 2.25 mA.
At higher levels of current limit, either the ambient temperature or the maximum value of the VSENSE voltage must
be derated. In any design, the voltage drop across the external series resistor, RTHR, reduces the maximum
voltage received by the SENSE pin and helps extend the allowable module input voltage and ambient
temperature range.
l TEXAS INSTRUMENTS 130 130
Voltage at SENSE (V)
Maximum Ambient Temperature (qC)
0 10 20 30 40 50 60 70 80
70
75
80
85
90
95
100
105
110
115
120
125
130
D012
RSENSE = 562 :, IL = 2.25 mA
RSENSE = 400 :, IL = 3.2 mA
RSENSE = 200 :, IL = 6.3 mA
Voltage at SENSE (V)
Maximum Ambient Temperature (qC)
0 10 20 30 40 50 60 70 80
70
75
80
85
90
95
100
105
110
115
120
125
130
D011D011
RSENSE = 562 :, IL = 2.25 mA
RSENSE = 400 :, IL = 3.2 mA
RSENSE = 200 :, IL = 6.3 mA
24
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Typical Application (continued)
(1) This figure also applies to the ISO1212 device if only one of the two channels are expected to be active at a given
time.
Figure 19. Maximum Ambient Temperature Derating Curve for ISO1211 vs VSENSE
Figure 20 shows the maximum allowed ambient temperature for the ISO1212 device for different current limit and
input voltage conditions. The ISO1212 device can be used with a VSENSE voltage up to 36 V and an ambient
temperature of up to 125°C for an RSENSE value of 562 , which corresponds to a typical current limit of 2.25 mA.
At higher current limit levels, either the ambient temperature or the maximum value of the VSENSE voltage must
be derated. Operation of the ISO1212 device with an RSENSE value of 200 Ωand with both channels active is not
recommended beyond a VSENSE voltage of 36 V. In any design, the voltage drop across the series resistor, RTHR,
reduces the maximum voltage received by the SENSE pin and helps extend the allowable module input voltage
and ambient temperature range.
(1) This figure only applies if both channels of the ISO1212 device are expected to be on at the same time. If only one
channel is expected to be on at a given time, refer to Figure 19.
Figure 20. Maximum Ambient Temperature Derating Curve for ISO1212 vs VSENSE
“p i “g x
ISO1211
+
±
VIN
60 V CIN
RSENSE
FGND
IN
SENSE
OUT
VCC1
GND1
RTHR
ISO1211
+
±
VIN CIN
RSENSE
FGND
IN
SENSE
OUT
VCC1
GND1
RTHR
RSHUNT
25
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Typical Application (continued)
9.2.1.2.3 Designing for 48-V Systems
The ISO121x devices are suitable for 48-V digital input receivers. The current limit, voltage transition thresholds,
and maximum voltage supported at the module input are governed by Equation 1,Equation 2,Equation 3, and
Equation 4. For 48-V systems, a threshold voltage close to 25 V is desirable. The RTHR resistor can be adjusted
to achieve this higher threshold. For example, with an RSENSE value of 562 and an RTHR value of 7.5 k ,aVIH
value of approximately 25 V can be achieved. With this setting, the RTHR resistor drops a voltage of
approximately 17 V, reducing the maximum value of the VSENSE voltage for any given module input voltage. This
drop vastly increases the allowable module input voltage and ambient temperature range as discussed in
Thermal Considerations.
9.2.1.2.4 Designing for Input Voltages Greater Than 60 V
The ISO121x devices are rated for 60 V on the SENSE and IN pins with respect to FGND. However, larger
voltages on the module input can be supported by dropping extra voltage across an external resistor, RTHR.
Because the current drawn by the SENSE and IN pins is well controlled by the built-in current limit, the voltage
drop across RTHR is well controlled as well. However, increasing the RTHR resistance also correspondingly raises
the voltage transition threshold. An additional resistor, RSHUNT (see Figure 21), provides the flexibility to change
the voltage transition thresholds independently of the maximum input voltage. The current through the RSHUNT
resistor is less near the voltage transition threshold, but increases with the input voltage, increasing the voltage
drop across the RTHR resistor, and preventing the voltage on the ISO121x pins from exceeding 60 V. With the
correct value selected for the RTHR and RSHUNT resistors, the voltage transition thresholds and the maximum input
voltage supported can be adjusted independently.
A 1-nF or greater CIN capacitor is recommended between the SENSE and FGND pins to slow down the
transitions on the SENSE pin, and to prevent overshoot beyond 60 V during transitions.
For more information, refer to the How to Design Isolated Comparators for ±48V, 110V and 240V DC and AC
Detection TI TechNote. Use the ISO121x Threshold Calculator for 9V to 300V DC and AC Voltage Detection to
estimate the values of voltage transition thresholds, the maximum-allowed module input voltage, and module
input current for given values of the RSENSE, RTHR, and RSHUNT resistors.
Figure 21. Increase ISO121x Input Voltage Range With RSHUNT
Another way to increase the maximum module input voltage without changing the voltage transition thresholds is
to use a 60-V Zener diode to limit the voltage on the ISO121x pins to less than 60 V as shown in Figure 22. In
this case, when the module input is greater than 60 V, the Zener diode must be designed to sink the additional
current, and the RTHR resistor must be designed to drop a higher voltage.
For example, with a 2.5-kRTHR and 560-RSENSE, the voltage transition threshold is 15 V, and the ISO121x
input current is 2.25 mA. If the module voltage reaches 100 V, the voltage drop across the RTHR resistor is 40 V,
and the current through the Zener diode is approximately 14 mA.
Figure 22. Increase ISO121x Input Voltage Range Using a Zener Diode
l TEXAS INSTRUMENTS
26
ISO1211
,
ISO1212
SLLSEY7F –JUNE 2017REVISED APRIL 2020
www.ti.com
Product Folder Links: ISO1211 ISO1212
Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated
Typical Application (continued)
9.2.1.2.5 Surge, ESD, and EFT Tests
Digital input modules are subject to surge (IEC 61000-4-5), electrostatic discharge or ESD (IEC 61000-4-2) and
electrical fast transient or EFT (IEC 61000-4-4) tests. The surge impulse waveform has the highest energy and
the widest pulse width, and is therefore the most stringent test of the three.
Figure 16 shows the application diagram for Type 1 and 3 systems. For a 1-kVPP surge test between the input
terminals and protection earth (PE), a value of 1 kΩfor RTHR and 10 nF for CIN is recommended. Table 3 lists a
summary of recommended component values to meet different levels of EMC requirements for Type 1 and 3
systems.
Table 3. Surge, IEC ESD and EFT
IEC 61131-2
TYPE RSENSE RTH CIN
SURGE IEC ESD IEC EFT
LINE-TO-PE LINE-TO-LINE LINE-TO-FGND
Type 1 562 2.5 kΩ10 nF ±1 kV ±1 kV ±1 kV ±6 kV ±4 kV
Type 3 562 1 kΩ10 nF ±1 kV ±1 kV ±500 V ±6 kV ±4 kV
330 nF ±1 kV ±1 kV ±1 kV ±6 kV ±4 kV
Figure 23 shows the test setup and application circuit used for surge testing. A noise filtering capacitor of 500 pF
is recommended between the FGND pin and PE (earth). The total value of effective capacitance between the
FGND pin and any other ground potential (including PE) must not exceed 500 pF for optimum surge
performance. For line-to-PE test (common-mode test), the FGND pin is connected to the auxiliary equipment
(AE) through a decoupling network.
‘5‘ TEXAS INSTRUMENTS EVDrSSVDrZSV
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
FGND2
FGND1
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
FGND2
FGND1
Host
Controller
GND1
GND1
VCC1
VCC1
VCC
GND
5 V or 3.3 V or 2.5 V
Backplane supply
RSENSE
RTHR
CIN
RSENSE
RTHR
CIN
RSENSE
RTHR
CIN
RSENSE
RTHR
CIN
500 pF(2)
2 kV
Protection
Earth (PE)
Field Ground
(FGND)
Copyright © 2017, Texas Instruments Incorporated
Decoupling
NetworkAuxiliary
Equipment
(AE)
IN1
IN2
INN-1
INN
FGND(1)
PE
PE
20 mH
20 mH
20 mH
20 mH
20 mH
Line-to-Line
Line-to-PE
Line-to-FGND
27
ISO1211
,
ISO1212
www.ti.com
SLLSEY7F –JUNE 2017REVISED APRIL 2020
Product Folder Links: ISO1211 ISO1212
Submit Documentation FeedbackCopyright © 2017–2020, Texas Instruments Incorporated
(1) For line-to-PE test, FGND is connected to the auxiliary equipment (AE) through a decoupling network.
(2) A noise filtering capacitor of about 500 pF is recommended between the FGND pin and PE (earth). The total value of
effective capacitance between the FGND pin and any other ground potential (including PE) must not exceed 500 pF
for optimum performance.
Figure 23. Setup and Application Circuit Used for Surge Test
For higher voltage levels of surge tests or for faster systems that cannot use a large value for CIN, TVS diodes or
varistors can be used to meet EMC requirements. Type 2 systems that use a smaller value for RTHR may also
require TVS diodes or varistors for surge protection. Figure 24 shows an example usage of TVS diodes for surge
protection. The recommended components for surge protection are VCAN26A2-03S (TVS, Vishay), EZJ-
P0V420WM (Varistor, Panasonic), and GSOT36C (TVS, Vishay).
Use of the RTHR resistor also reduces the peak current requirement for the TVS diodes, making them smaller and
cost effective. For example, a 2-kV surge through a 1-kΩRTHR resistor creates only 2-A peak current. Also,
because of voltage drop across the RTHR resistor in normal operation, the working voltage requirement for the
varistor or TVS diodes is reduced. For example, for a RTHR value of 1 kΩand an RSENSE value of 562 Ω, a
module designed for 30-V inputs only requires 28-V TVS diodes because the RTHR resistor drops more than 2 V.
‘5‘ TEXAS INSTRUMENTS svorazvorzav
Host
Controller
ISO1212
IN1
ISO1212
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
EN
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
EN
EN1
DIN1
DIN2
DIN7
DIN8
EN2
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
EN
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
EN
RTHR
RSENSE
IN2 RTHR
RSENSE
IN7 RTHR
RSENSE
IN8 RTHR
RSENSE
IN9
RTHR
RSENSE
IN10
RTHR
RSENSE
IN15
RTHR
RSENSE
IN16
RTHR
RSENSE
Copyright © 2017, Texas Instruments Incorporated
ISO1211
IN
SENSE
OUT
FGND
Host
Controller
GND1
24 V
0 V
VCC1 VCC
GND
5 V or 3.3 V or 2.5 V
Backplane Supply
TVS
RSENSE
RTHR
Copyright © 2017, Texas Instruments Incorporated
28
ISO1211
,
ISO1212
SLLSEY7F –JUNE 2017REVISED APRIL 2020
www.ti.com
Product Folder Links: ISO1211 ISO1212
Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated
Figure 24. TVS Diodes Used Instead of a Filtering Capacitor for Surge Protection in Faster Systems
9.2.1.2.6 Multiplexing the Interface to the Host Controller
The ISO121x devices provide an output-enable pin on the controller side (EN). Setting the EN pin to 0 causes
the output buffers to be in the high-impedance state. This feature can be used to multiplex the outputs of multiple
ISO121x devices on the same host-controller input, reducing the number of pins on the host controller.
In the example shown in Figure 25, two sets of 8-channel inputs are multiplexed, reducing the number of input
pins required on the controller from 16 to 10. Similarly, if four sets of 8-channel inputs are multiplexed, the
number of pins on the controller is reduced from 32 to 12.
Figure 25. Using the Output Enable Option to Multiplex the Interface to the Host Controller
9.2.1.2.7 Status LEDs
The outputs of the ISO121x devices can be used to drive status LEDs on the controller side as shown in
Figure 26. The output buffers of the ISO121x can provide 4-mA, 3-mA, and 2-mA currents while working at VCC1
values of 5 V, 3.3 V, and 2.5 V respectively.
l TEXAS INSTRUMENTS 5vor33Vm25v 275
Input Voltage (V)
Input Current (mA)
0 5 10 15 20 25 30
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
±40°C
25°C
85°C
105°C
115°C
125°C
ON = 8.25 V
OFF = 7.1 V
ISO1211
IN
SENSE
OUT
FGND
Host
Controller
GND1
Power
Supply
24 V
0 V
VCC1 VCC
GND
5 V or 3.3 V or 2.5 V
Backplane Supply
Status
LED
RTHR
CIN RSENSE
Copyright © 2017, Texas Instruments Incorporated
29
ISO1211
,
ISO1212
www.ti.com
SLLSEY7F –JUNE 2017REVISED APRIL 2020
Product Folder Links: ISO1211 ISO1212
Submit Documentation FeedbackCopyright © 2017–2020, Texas Instruments Incorporated
In some cases, placing the LED on the field side is desirable although it is powered from VCC1. In such cases, the
signal carrying current to the LED can be routed in an inner layer without compromising the isolation of the
digital-input module. For more information, see the Layout Guidelines section.
Figure 26. Using ISO121x Outputs to Drive Status LEDs
9.2.1.3 Application Curve
RSENSE = 562 RTHR = 0 Ω
Figure 27. Input Current vs Input Voltage
‘5‘ TEXAS INSTRUMENTS 247v
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
FGND2
FGND1
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
FGND2
FGND1
Host
Controller
GND1
GND1
Power
Supply
24 V
0 V
VCC1
VCC1
VCC
GND
5 V or 3.3 V or 2.5 V
Backplane supply
RSENSE
RTHR
CIN
RSENSE
CIN
RSENSE
RSENSE
CIN
500 pF/2 kV
Protection
Earth (PE)
Sensors and
Switches
Copyright © 2017, Texas Instruments Incorporated
PE
24-V
Common
Current Flow
CIN
Current Flow
RTHR
RTHR
RTHR
30
ISO1211
,
ISO1212
SLLSEY7F –JUNE 2017REVISED APRIL 2020
www.ti.com
Product Folder Links: ISO1211 ISO1212
Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated
9.2.2 Sourcing Inputs
The ISO121x devices can be configured as sourcing inputs as shown in Figure 28. In this configuration, all the
SENSE pins are connected to the common voltage (24 V), and the inputs are connected to the individual FGND
pins.
Figure 28. Typical Application Circuit With Sourcing Inputs
‘5‘ TEXAS INSTRUMENTS SVDrSGVorZSV
Host
Controller
BAT54CLT1G
IN
ISO1211
RSENSE
FGND
IN
SENSE
OUT
VCC1
GND1
RTHR
CIN
±24 V
COM
Current for positive polarity
Current for negative polarity
ISO1212
IN1
SENSE1
OUT1
IN2
SENSE2
OUT2
FGND2
FGND1
Host
Controller
GND1
VCC1 VCC
GND
5 V or 3.3 V or 2.5 V
Backplane supply
RSENSE
CIN
RTHR
RSENSE
±24 V
IN
COM
Copyright © 2017, Texas Instruments Incorporated
31
ISO1211
,
ISO1212
www.ti.com
SLLSEY7F –JUNE 2017REVISED APRIL 2020
Product Folder Links: ISO1211 ISO1212
Submit Documentation FeedbackCopyright © 2017–2020, Texas Instruments Incorporated
9.2.3 Sourcing and Sinking Inputs (Bidirectional Inputs)
The ISO1212 device can be used to create a bidirectional input module that can sink and source current as
shown in Figure 29. In this configuration, channel 1 is active if the COM terminal is connected to ground for
sinking inputs, and channel 2 is active if the COM terminal is connected to 24 V for sourcing input. The digital
input is considered high if either the OUT1 or OUT2 pin is high.
Figure 29. Application Circuit—ISO1212 With Sourcing and Sinking Inputs
A bidirectional input module can also be built with the ISO121x devices using low-cost Schottky diodes as shown
in Figure 30.
Figure 30. Bidirectional Implementation With ISO1211 and Bridge Rectifier
10 Power Supply Recommendations
To help ensure reliable operation at data rates and supply voltages, a 0.1-μF bypass capacitor is recommended
on the side 1 supply pin (VCC1). The capacitor should be placed as close to the supply pins as possible.
l TEXAS INSTRUMENTS 2 mm maxwmum Hgflp [
R
High Voltage Input
RSENSE
0.1 F
2 mm maximum
from VCC
Isolation Capacitor
VCC1
GND1 SUB
OUT FGND
SENSE
IN
RC
EN
VCC
MCU
C
CIN
RTHR
GND1
Plane
FGND
Plane
32
ISO1211
,
ISO1212
SLLSEY7F –JUNE 2017REVISED APRIL 2020
www.ti.com
Product Folder Links: ISO1211 ISO1212
Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated
11 Layout
11.1 Layout Guidelines
The board layout for ISO1211 and ISO1212 can be completed in two layers. On the field side, place RSENSE, CIN,
and RTHR on the top layer. Use the bottom layer as the field ground (FGND) plane. TI recommends using RSENSE
and CIN in 0603 footprint for a compact layout, although larger sizes (0805) can also be used. The CIN capacitor
is a 50-V capacitor and is available in the 0603 footprint. Keep CIN as close to the ISO121x device as possible.
The SUB pin on the ISO1211 device and the SUB1 and SUB2 pins on the ISO1212 device should be left
unconnected. For group isolated design, use vias to connect the FGND pins of the ISO121x device to the bottom
FGND plane. The placement of the RTHR resistor is flexible, although the resistor pin connected to external high
voltage should not be placed within 4 mm of the ISO121x device pins or the CIN and RSENSE pins to avoid
flashover during EMC tests.
Only a decoupling capacitor is required on side 1. Place this capacitor on the top-layer, with the bottom layer for
GND1.
If a board with more than two layers is used, placing two ISO121x devices on the top-and bottom layers (back-to-
back) is possible to achieve a more compact board. The inner layers can be used for FGND.
Figure 31 and Figure 32 show the example layouts.
In some designs, placing the LED on the field side is desirable although it is powered from VCC1. In such cases,
the signal carrying current to the LED can be routed in an inner layer without compromising the isolation of the
digital-input module as shown in Figure 33. The LED must be placed with at least 4-mm spacing between other
components and connections on side 1 to ensure adequate isolation.
11.2 Layout Example
Figure 31. Layout Example With ISO1211
l TEXAS INSTRUMENTS 2 mm Maxwmum L \ g WE
R
High Voltage Input
RSENSE
0.1 F
2 mm maximum
from VCC
Isolation Capacitor
VCC1
GND1 SUB
OUT FGND
SENSE
IN
RC
EN
VCC
MCU
C
CIN
RTHR
GND1
Plane
FGND
Plane
4 mm minimum
LED
R
R
Isolation Capacitor
C
R C
0.1 FC
R
R
VCC1
GND1
EN
OUT1
OUT2
GND1
NC
NC
SENSE1
IN1
FGND
SUB1
SUB2
SENSE1
IN1
FGND
VCC
FGND
INP1
INP2
RSENSE RSENSE
CIN CIN
RTHR
RTHR
GND1
Plane FGND
Plane
2 mm Maximum
from VCC
High Voltage
Input
MCU
33
ISO1211
,
ISO1212
www.ti.com
SLLSEY7F –JUNE 2017REVISED APRIL 2020
Product Folder Links: ISO1211 ISO1212
Submit Documentation FeedbackCopyright © 2017–2020, Texas Instruments Incorporated
Layout Example (continued)
Figure 32. Layout Example With ISO1212
Figure 33. Layout Example With LED Placed on the Field Side But Driven From VCC1 Power Domain
l TEXAS INSTRUMENTS
34
ISO1211
,
ISO1212
SLLSEY7F –JUNE 2017REVISED APRIL 2020
www.ti.com
Product Folder Links: ISO1211 ISO1212
Submit Documentation Feedback Copyright © 2017–2020, Texas Instruments Incorporated
12 Device and Documentation Support
12.1 Device Support
12.1.1 Development Support
For development support, refer to:
Sub 1-W, 16-Channel, Isolated Digital Input Module Reference Design
Broken Wire Detection Using An Optical Switch Reference Design
Redundant Dual Channel Reference Design for Safe Torque Off in Variable Speed Drives
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation see the following:
Texas Instruments, How To Improve Speed and Reliability of Isolated Digital Inputs in Motor Drives TI
TechNote
Texas Instruments, How to Design Isolated Comparators for ±48V, 110V and 240V DC and AC Detection TI
TechNote
Texas Instruments, How To Simplify Isolated 24-V PLC Digital Input Module Designs TI TechNote
Texas Instruments, Isolation Glossary
Texas Instruments, ISO121x Threshold Calculator for 9V to 300V DC and AC Voltage Detection
Texas Instruments, ISO1211 Isolated Digital-Input Receiver Evaluation Module user's guide
Texas Instruments, ISO1212 Isolated Digital-Input Receiver Evaluation Module user's guide
12.3 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to order now.
Table 4. Related Links
PARTS PRODUCT FOLDER ORDER NOW TECHNICAL
DOCUMENTS TOOLS &
SOFTWARE SUPPORT &
COMMUNITY
ISO1211 Click here Click here Click here Click here Click here
ISO1212 Click here Click here Click here Click here Click here
12.4 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.5 Community Resource
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.6 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
l TEXAS INSTRUMENTS
35
ISO1211
,
ISO1212
www.ti.com
SLLSEY7F –JUNE 2017REVISED APRIL 2020
Product Folder Links: ISO1211 ISO1212
Submit Documentation FeedbackCopyright © 2017–2020, Texas Instruments Incorporated
12.7 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.8 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
ISO1211D ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1211
ISO1211DR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1211
ISO1212DBQ ACTIVE SSOP DBQ 16 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1212
ISO1212DBQR ACTIVE SSOP DBQ 16 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 1212
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
l TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS ’ I+K0 '«PI» Reel Diame|er AD Dimension deSIgned Io accommodate me componem wIdIh E0 Dimension deSIgned Io eecommodaIe me componenI Iengm KO Dlmenslun desIgned to accommodate me componem Ihlckness 7 w OvereII wmm OHhe earner cape i p1 Pitch between successwe cavIIy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O SprockeIHoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
ISO1211DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
ISO1212DBQR SSOP DBQ 16 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 1
l TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
ISO1211DR SOIC D 8 2500 350.0 350.0 43.0
ISO1212DBQR SSOP DBQ 16 2500 350.0 350.0 43.0
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 2
l TEXAS INSTRUMENTS T - Tube height| L - Tube length l ,g + w-Tuhe _______________ _ ______________ width 47 — B - Alignment groove width
TUBE
*All dimensions are nominal
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
ISO1211D D SOIC 8 75 505.46 6.76 3810 4
ISO1212DBQ DBQ SSOP 16 75 505.46 6.76 3810 4
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 3
‘J
www.ti.com
PACKAGE OUTLINE
C
.228-.244 TYP
[5.80-6.19]
.069 MAX
[1.75]
6X .050
[1.27]
8X .012-.020
[0.31-0.51]
2X
.150
[3.81]
.005-.010 TYP
[0.13-0.25]
0 - 8 .004-.010
[0.11-0.25]
.010
[0.25]
.016-.050
[0.41-1.27]
4X (0 -15 )
A
.189-.197
[4.81-5.00]
NOTE 3
B .150-.157
[3.81-3.98]
NOTE 4
4X (0 -15 )
(.041)
[1.04]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
18
.010 [0.25] C A B
5
4
PIN 1 ID AREA
SEATING PLANE
.004 [0.1] C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.800
Yl“‘+
www.ti.com
EXAMPLE BOARD LAYOUT
.0028 MAX
[0.07]
ALL AROUND
.0028 MIN
[0.07]
ALL AROUND
(.213)
[5.4]
6X (.050 )
[1.27]
8X (.061 )
[1.55]
8X (.024)
[0.6]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
EXPOSED
METAL
OPENING
SOLDER MASK METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED
METAL
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SYMM
1
45
8
SEE
DETAILS
SYMM
www.ti.com
EXAMPLE STENCIL DESIGN
8X (.061 )
[1.55]
8X (.024)
[0.6]
6X (.050 )
[1.27] (.213)
[5.4]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
SYMM
SYMM
1
45
8
DBQOO16A
www.ti.com
PACKAGE OUTLINE
C
TYP-.244.228
-6.195.80[ ]
.069 MAX
[1.75]
14X .0250
[0.635]
16X -.012.008
-0.300.21[ ]
2X
.175
[4.45]
TYP-.010.005
-0.250.13[ ]
0- 8 -.010.004
-0.250.11[ ]
(.041 )
[1.04]
.010
[0.25]
GAGE PLANE
-.035.016
-0.880.41[ ]
A
NOTE 3
-.197.189
-5.004.81[ ]
B
NOTE 4
-.157.150
-3.983.81[ ]
SSOP - 1.75 mm max heightDBQ0016A
SHRINK SMALL-OUTLINE PACKAGE
4214846/A 03/2014
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 inch, per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MO-137, variation AB.
116
.007 [0.17] C A B
9
8
PIN 1 ID AREA
SEATING PLANE
.004 [0.1] C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.800
DBQOO16A 4%? ““‘+““‘ Egg P 4L
www.ti.com
EXAMPLE BOARD LAYOUT
.002 MAX
[0.05]
ALL AROUND
.002 MIN
[0.05]
ALL AROUND
(.213)
[5.4]
14X (.0250 )
[0.635]
16X (.063)
[1.6]
16X (.016 )
[0.41]
SSOP - 1.75 mm max heightDBQ0016A
SHRINK SMALL-OUTLINE PACKAGE
4214846/A 03/2014
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
OPENING
SOLDER MASK METAL
SOLDER MASK
DEFINED
LAND PATTERN EXAMPLE
SCALE:8X
SYMM
1
89
16
SEE
DETAILS
DBQOO16A ¢§EE ““‘+““‘ Egg?
www.ti.com
EXAMPLE STENCIL DESIGN
16X (.063)
[1.6]
16X (.016 )
[0.41]
14X (.0250 )
[0.635]
(.213)
[5.4]
SSOP - 1.75 mm max heightDBQ0016A
SHRINK SMALL-OUTLINE PACKAGE
4214846/A 03/2014
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.127 MM] THICK STENCIL
SCALE:8X
SYMM
SYMM
1
89
16
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