onsemi 的 NSVJ3910SB3 规格书

ON Semiconductor“ BIO J2
1 Publication Order Number :
NSVJ3910SB3/D
© Semiconductor Components Industries, LLC, 2016
April 2016 - Rev. 0
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NSVJ3910SB3
N-Channel JFET
25V, 20 to 40mA, 40mS
Automotive JFET designed for compact and efficient designs and
including high gain performance. AEC-Q101 qualified JFET and PPAP
capable suitable for automotive applications.
Features
High Forward Transfer Admittance
High Breakdown Voltage
Low Input Capacitance
Low Noise Figure
Pb-Free and RoHS compliance
AEC-Q101 qualified and PPAP capable
Typical Applications
Low Noise Amplifier for Automotive AM Radio
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)
Parameter Symbol Value Unit
Drain-to-Source Voltage VDSX 25 V
Gate-to-Drain Voltage VGDS 25 V
Gate Current IG 10 mA
Drain Current ID 50 mA
Allowable Power Dissipation PD 400 mW
Operating Junction and
Storage Temperature TJ, Tstg 55 to 150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ELECTRICAL CONNECTION
N-Channel
12
3
1 : Source
2 : Drain
3 : Gate
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet
MARKING
CPH3
3
2
1
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2
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter Symbol Conditions Value Unit
min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDS IG = 10A, VDS = 0V 25 V
Gate Cutoff Current IGSS VGS = 10V, VDS = 0V
1.0 nA
Cutoff Voltage VGS(off) VDS = 5V, ID = 100A 0.6 1.2 1.8 V
Drain Current IDSS V
DS = 5V, VGS = 0V 20 40 mA
Forward Transfer Admittance | yfs | VDS = 5V, VGS = 0V, f = 1kHz 30 40 mS
Input Capacitance Ciss VDS = 5V, VGS = 0V, f = 1MHz 6.0 pF
Reverse Transfer Capacitance Crss 2.3 pF
Noise Figure NF VDS = 5V, VGS = 0V f = 100MHz 2.1 2.8 dB
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NSVJ3910SB3
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3
Z. 810. 15 f 2.9th ‘ 2 3 J , if: if: f“. L‘,,,,J L,,,,J *- If M 1} L,,,,J i 2 f" ‘ 3 . tIH : ”A 0.1 ® A FINN 34%
NSVJ3910SB3
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4
PACKAGE DIMENSIONS
unit : mm
*1 : Lot Indication
RECOMMENDED
SOLDERING FOOTPRINT
1 : Source
2 : Drain
3 : Gate
0.6
2.4
0.95 0.95
1.4
CPH3
CASE 318BA
ISSUE O
NSVJ3910SB3
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5
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ORDERING INFORMATION
Device Marking Package Shipping
NSVJ3910SB3T1G J2
CPH3
Pb-Free) 3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF