NXP USA Inc. 的 BC847 Series 规格书

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1. Product profile
1.1 General description
NPN general-purpose transistors in Surface-Mounted Device (SMD) plastic packages.
[1] Valid for all available selection groups.
1.2 Features and benefits
General-purpose transistors
SMD plastic packages
Three different gain selections
AEC-Q101 qualified
1.3 Applications
General-purpose switching and amplification
BC847 series
45 V, 100 mA NPN general-purpose transistors
Rev. 9 — 23 September 2014 Product data sheet
Table 1. Product overview
Type number[1] Package PNP complement
NXP JEITA JEDEC
BC847 SOT23 - TO-236AB BC857
BC847A BC857A
BC847B BC857B
BC847C BC857C
BC847W SOT323 SC-70 - BC857W
BC847AW BC857AW
BC847BW BC857BW
BC847CW BC857CW
BC847T SOT416 SC-75 - BC857T
BC847AT BC857AT
BC847BT BC857BT
BC847CT BC857CT
BC847AM SOT883 SC-101 - BC857AM
BC847BM BC857BM
BC847CM BC857CM
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 2 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
1.4 Quick reference data
[1] Tamb = 25 °C unless otherwise specified
2. Pinning information
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 45 V
ICcollector current - - 100 mA
hFE DC current gain VCE =5V; I
C=2mA [1] 110 - 800
hFE group A 110 180 220
hFE group B 200 290 450
hFE group C 420 520 800
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
SOT23, SOT323, SOT416
1base
2emitter
3 collector
SOT883
1base
2emitter
3 collector
006aaa144
12
3
sym021
3
2
1
3
1
2
Transparent
top view
sym021
3
2
1
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Product data sheet Rev. 9 — 23 September 2014 3 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
3. Ordering information
[1] Valid for all available selection groups.
4. Marking
[1] * = placeholder for manufacturing site code
Table 4. Ordering information
Type number[1] Package
Name Description Version
BC847 - plastic surface-mounted package; 3 leads SOT23
BC847A
BC847B
BC847C
BC847W SC-70 plastic surface-mounted package; 3 leads SOT323
BC847AW
BC847BW
BC847CW
BC847T SC-75 plastic surface-mounted package; 3 leads SOT416
BC847AT
BC847BT
BC847CT
BC847AM SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0 0.6 0.5 mm SOT883
BC847BM
BC847CM
Table 5. Marking codes
Type number Marking code[1] Type number Marking code[1]
BC847 1H* BC847T 1N
BC847A 1E* BC847AT 1E
BC847B 1F* BC847BT 1F
BC847C 1G* BC847CT 1G
BC847W 1H* BC847AM D4
BC847AW 1E* BC847BM D5
BC847BW 1F* BC847CM D6
BC847CW 1G*
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 4 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 60 m copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 45 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current - 100 mA
ICM peak collector current single pulse;
tp1ms -200mA
IBM peak base current single pulse;
tp1ms -100mA
Ptot total power dissipation Tamb 25 C[1]
SOT23 - 250 mW
SOT323 - 200 mW
SOT416 - 150 mW
SOT883 [2] -250mW
Tjjunction temperature - 150 C
Tamb ambient temperature 65 +150 C
Tstg storage temperature 65 +150 C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1]
SOT23 - - 500 K/W
SOT323 - - 625 K/W
SOT416 - - 833 K/W
SOT883 [2] --500K/W
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 5 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: tp300 s; = 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =30V; I
E=0A - - 15 nA
VCB =30V; I
E=0A;
Tj= 150 C--5A
IEBO emitter-base cut-off
current VEB =5V; I
C= 0 A - - 100 nA
hFE DC current gain VCE =5V; I
C=10A
hFE group A - 170 -
hFE group B - 280 -
hFE group C - 420 -
DC current gain VCE =5V; I
C=2mA 110 - 800
hFE group A 110 180 220
hFE group B 200 290 450
hFE group C 420 520 800
VCEsat collector-emitter
saturation voltage IC=10mA; I
B=0.5mA - 90 200 mV
IC=100mA; I
B=5mA [1] - 200 400 mV
VBEsat base-emitter
saturation voltage IC=10mA; I
B=0.5mA [2] - 700 - mV
IC=100mA; I
B=5mA [2] - 900 - mV
VBE base-emitter voltage IC=2mA; V
CE =5V [2] 580 660 700 mV
IC=10mA; V
CE =5V - - 770 mV
fTtransition frequency VCE =5V; I
C=10mA;
f=100MHz 100--MHz
Cccollector capacitance VCB =10V; I
E=i
e=0A;
f=1MHz --1.5pF
Ceemitter capacitance VEB =0.5V; I
C=i
c=0A;
f=1MHz -11-pF
NF noise figure IC=200A; VCE =5V;
RS=2k; f = 1 kHz;
B=200Hz
-210dB
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 6 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
VCE =5V
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
VCE =5V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 1. Group A: DC current gain as a function of
collector current; typical values Fig 2. Group A: Base-emitter voltage as a function of
collector current; typical values
IC/IB=20
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
IC/IB=10
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 3. Group A: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 4. Group A: Base-emitter saturation voltage as a
function of collector current; typical values
mgt723
10111010
2103
IC (mA)
0
400
300
200
100
hFE
(1)
(2)
(3)
mgt724
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBE
(mV)
(1)
(2)
(3)
103
102
10
mgt725
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
mgt726
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 7 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
VCE =5V
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
VCE =5V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 5. Group B: DC current gain as a function of
collector current; typical values Fig 6. Group B: Base-emitter voltage as a function of
collector current; typical values
IC/IB=20
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
IC/IB=10
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 7. Group B: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 8. Group B: Base-emitter saturation voltage as a
function of collector current; typical values
mgt727
10-111010
2103
IC (mA)
0
600
500
400
300
200
100
hFE
(1)
(2)
(3)
0
1200
1000
800
600
400
200
mgt728
10210111010
2103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
104
103
102
10
mgt729
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
mgt730
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 8 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
VCE =5V
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
VCE =5V
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 9. Group C: DC current gain as a function of
collector current; typical values Fig 10. Group C: Base-emitter voltage as a function of
collector current; typical values
IC/IB=20
(1) Tamb = 150 C
(2) Tamb =25C
(3) Tamb =55 C
IC/IB=10
(1) Tamb =55 C
(2) Tamb =25C
(3) Tamb = 150 C
Fig 11. Group C: Collector-emitter saturation voltage
as a function of collector current; typical
values
Fig 12. Group C: Base-emitter saturation voltage as a
function of collector current; typical values
mgt731
10111010
2103
IC (mA)
0
1200
1000
800
600
400
200
hFE
(1)
(2)
(3)
0
1200
1000
800
600
400
200
mgt732
10210111010
2103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
104
103
102
10
mgt733
10111010
2103
IC (mA)
VCEsat
(mV)
(1)
(2)(3)
mgt734
10
1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
L744
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 9 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Fig 13. Package outline SOT23 (TO-236AB)
Fig 14. Package outline SOT323 (SC-70)
T F --
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 10 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
Fig 15. Package outline SOT416 (SC-75)
Fig 16. Package outline SOT883 (SC-101)
,Hll}? , ,wLi, , , , , , , “TL , , i ,7er , «J \ ‘‘‘‘‘ +L, j 14“, , 1,qu LLL " + , , L L, , , , ,
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 11 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
10. Soldering
Fig 17. Reflow soldering footprint SOT23 (TO-236AB)
Fig 18. Wave soldering footprint SOT23 (TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 12 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
Fig 19. Reflow soldering footprint SOT323 (SC-70)
Fig 20. Wave soldering footprint SOT323 (SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 13 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
Fig 21. Reflow soldering footprint SOT416 (SC-75)
Fig 22. Reflow soldering footprint SOT883 (SC-101)
solder lands
solder resist
occupied area
solder paste
sot416_fr
0.85
1.7
2.2
2
0.5
(3×)
0.6
(3×)
1
1.3
Dimensions in mm
solder lands
solder resist
occupied area
solder paste
sot883_fr
1.3
0.3
0.6 0.7
0.4
0.9
0.3
(2×)
0.4
(2×)
0.25
(2×)
R0.05 (12×)
0.7
Dimensions in mm
Section 1.2 “Features and benefits" Section 5 “Lim Ing values" Figure 5 Section 8 “Test information" Section 12 “Legal information"
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 14 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
11. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC847_SER v.9 20140923 Product data sheet - BC847_SER v.8
Modifications: Section 1.2 “Features and benefits: updated
Section 5 “Limiting values: updated
Figure 5: corrected
Section 8 “Test information: added
Section 12 Legal information: updated
BC847_SER v.8 20120820 Product data sheet - BC847_BC547_SER v.7
BC847_BC547_SER v.7 20081210 Product data sheet - BC847_BC547_SER v.6
BC847_BC547_SER v.6 20050519 Product data sheet - -
BC847_SER All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 9 — 23 September 2014 15 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
12. Legal information
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[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 9 — 23 September 2014 16 of 17
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
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Export control — This document as well as the item(s) described herein
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Quick reference data The Quick reference data is an extract of the
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
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13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BC847 series
45 V, 100 mA NPN general-purpose transistors
© NXP Semiconductors N.V. 2014. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 September 2014
Document identifier: BC847_SER
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13 Contact information. . . . . . . . . . . . . . . . . . . . . 16
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17