MCR12DCM,N 规格书

© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Epoxy Meets rating UL Recognized compound meets
flammability rating V-0.
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
• Pb−Free Packages are Available
Features
This thyristor is designed primarily for half-wave ac control
applications, such as motor controls, heating controls,
and power supplies; or wherever half−wave, silicon gate−
controlled devices are needed.
Description
MCR12DCM, MCR12DCN
Functional Diagram
K
G
A
Additional Information
Samples
Resources
Datasheet
Pin Out
Pb
1
2
3
4
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© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(− 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
MCR12DCM VDRM 600 V
MCR12DCN VRRM 800
On-State RMS Current
(180º Conduction Angles; TC = 90°C) IT (RMS) 12 A
Average On−State Current
(180º Conduction Angles; TC = 90°C) IT(AV) 7. 8 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 100 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 41 A²sec
Forward Peak Gate Power
(Pulse Width ≤ 10 µsec,TC = 90°C) PGM 5.0 W
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C) PGM (AV) 0.5 W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µsec, TC= 90°C) IGM 2.0 A
Operating Junction Temperature Range TJ-40 to 125 °C
Storage Temperature Range Tstg -40 to 150 °C
Maximum Ratings (TJ = 25°C unless otherwise noted)
Thermal Characteristics
Rating Symbol Value Unit
Thermal Resistance, Junction−to−Case RƟJC 2.2
°C/WThermal Resistance, Junction−to−Ambient RƟJA 88
Thermal Resistance, Junction−to−Ambient (Note 2) RƟJA 80
Maximum Lead Temperature for Soldering Purposes 1/8" from Case for
10 Seconds TL260 °C
Maximum ratings are those values beyond which component damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating
conditions) and are not valid simultaneously. If these limits are exceeded, component functional operation is not implied, damage may occur and reliability may be affected.
1. V DRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Ty p Max Unit
Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM
or VRRM Gate Open)
TJ = 25°C IDRM
IRRM
- - 0.01 mA
TJ = 125°C - - 5.0
Characteristic Symbol Min Ty p Max Unit
Peak Forward On−State Voltage (Note 2) (ITM = 16 A) VTM _1.3 1.9 V
Gate Trigger Current (Continuous dc)
(VD = 12 V; RL = 100 Ω)
TJ = 25°C IGT
2.0 7. 0 20 mA
TJ = −40°C _ _ 40
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
TJ = 25°C VGT
0.5 0.65 1.0 V
TJ = −40°C _ _ 2.5
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 Ω) TJ = 125ºC VGD 0.2 _ _ V
Holding Current
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
TJ = 25°C IH
4.0 22 40 mA
TJ = −40°C _ _ 80
Latch Current
(VD = 12 V, IG = 20 µA, TJ = 25°C)
(VD = 12 V, IG = 40 µA, TJ = -40°C) IL
4.0 22 40
mA
_ _ 80
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© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Voltage Current Characteristic of SCR
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage
IHHolding Current
+Current
+Voltage
VTM
I
DRM at VDRM
I
H
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
I
RRM at VRRM
(off state)
Figure 1. Average RMS Current Derating Figure 2. On−State Power Dissipation
Dynamic Characteristics
Characteristic Symbol Min Ty p Max Unit
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM Exponential Waveform, Gate Open, TJ = 125ºC) dv/dt 50 200 − V/µs
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8" from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
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© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Figure 5. Typical Gate Trigger Current vs Junction Temperature
Figure 9. Exponential Static dv/dt vs
Gate−Cathode Resistance
Figure 7. Typical Holding Current vs Junction Temperature
Figure 6. Typical Gate Trigger Voltage vs Junction Temperature
(V)
(V)
TJ, JUNCTION TEMPERATURE
(
°C
)
I
, LATCHING CURRENT
L
65 125
10
1.0
100
35 80 110
(°C)
65 125
TJ, JUNCTION TEMPER ATURE
(
°)C
I
H, HOLDING CURRENT (mA)
10
1.0
100
110
(°C)
10001 0 K10
RGK
1000
100
VD = 800 V
TJ = 125°C
STATIC dv/dt (V/ s)
100
Figure 3. On−State Characteristics Figure 4. Transient Thermal Response
t, TIME (ms)
1.00.
1
1.0
0.
1
0.01
r(t)
,
TRANSIENT RESISTANCE
10 100 1000 10
K
ZJC(t) = R JC(t) r(t
)
(NORMALIZED)
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© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 05/10/19
Thyristors
Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN
Dimensions Part Marking System
Pin Assignment
1 Cathode
2 Anode
3 Gate
4 Anode
Ordering Information
Device Package Shipping
MCR12DCMT4 DPAK
2500 /
Tape & Reel
MCR12DCMT4G DPAK
(Pb−Free)
MCR12DCNT4 TO−220AB
MCR12DCNT4G TO−220AB
(Pb−Free)
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
12
3
4DPAK
CASE 369C
STYLE 4
Y= Y ear
WW = Work Week
R12DCx = Device Code
x= M or N
YWW
R1
2DCxG
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
b
D
E
b3
L3
L4
b2
M
0.005 (0.13) C
c2
A
c
C
Z
12 3
4
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW
e
BOTTOM VIEW
Z
BOTTOM VIEW
SIDE VIEW
TOP VIEW
ALTERNATE
CONSTRUCTIONS
NOTE 7
Z
Dim
Inches Millimeters
Min Max Min Max
A 0.087 0.094 2.20 2.40
A1 0.000 0.005 0.00 0.12
b 0.022 0.030 0.55 0.75
b2 0.026 0.033 0.65 0.85
b3 0.209 0.217 5.30 5.50
c 0.019 0.023 0.49 0.59
c2 0.019 0.023 0.49 0.59
D 0.213 0.224 5.40 5.70
E 0.252 0.260 6.40 6.60
e 0.091 2.30
H 0.374 0.406 9.50 10.30
L 0.058 0.070 1.47 1.78
L1 0.114 2.90
L2 0.019 0.023 0.49 0.59
L3 0.053 0.065 1.35 1.65
L4 0.028 0.039 0.70 1. 0 0
Z 0.154 - 3.90 -