Infineon Technologies 的 BGA7L1N6 规格书

@169
RF & Protection Devices
Data Sheet
Revision 3.1 (Min/Max), 2014-02-11
BGA7L1N6
Silicon Germanium Low Noise Amplifier for LTE
Edition 2014-02-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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BGA7L1N6
Data Sheet 3 Revision 3.1 (Min/Max), 2014-02-11
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™
of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Revision History
Page or Item Subjects (major changes since previous revision)
Revision 3.1 (Min/Max), 2014-02-11
10-15 Min/Max values added
Revision 3.0, 2014-02-10
7 Marking added
10-15 Electrical characteristics updated
10-15 Footnotes updated
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BGA7L1N6
Table of Contents
Data Sheet 4 Revision 3.1 (Min/Max), 2014-02-11
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.1 Measured RF Characteristics Band 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.2 Measured RF Characteristics Band 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.3 Measured RF Characteristics Band 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
3 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1 Application Circuit Schematic Band 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2 Application Circuit Schematic Band 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.3 Application Circuit Schematic Band 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table of Contents
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BGA7L1N6
List of Figures
Data Sheet 5 Revision 3.1 (Min/Max), 2014-02-11
Figure 1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 2 Application Schematic BGA7L1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 3 Application Schematic BGA7L1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 4 Application Schematic BGA7L1N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5 Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 6 Application Board Cross-Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7 TSNP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 8 Footprint Recommendation TSNP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 9 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 10 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 21
List of Figures
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BGA7L1N6
List of Tables
Data Sheet 6 Revision 3.1 (Min/Max), 2014-02-11
Table 1 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 4 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f= 869 - 894 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 5 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f= 869 - 894 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 6 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f= 925 - 960 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 7 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f= 925 - 960 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 8 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f= 734 - 746 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 9 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f= 734 - 746 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 10 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 11 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 12 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
List of Tables
(ifiineon RoHS / 9‘?
Product Name Marking Package
BGA7L1N6 CTSNP-6-2
Silicon Germanium Low Noise Amplifier for LTE BGA7L1N6
Data Sheet 7 Revision 3.1 (Min/Max), 2014-02-11
Features
• Insertion power gain: 13.3 dB
• Low noise figure: 0.90 dB
• Low current consumption: 4.4 mA
• Operating frequencies: 728 - 960 MHz
• Supply voltage: 1.5 V to 3.3 V
• Digital on/off switch (1V logic high level)
• Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
• B7HF Silicon Germanium technology
• RF output internally matched to 50 Ω
• Only 1 external SMD component necessary
• 2kV HBM ESD protection (including AI-pin)
• Pb-free (RoHS compliant) package
Figure 1 Block Diagram
BGA7L1N6_Blockdiagram.vsd
AI AO
GND
PONVCC
ESD
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BGA7L1N6
Features
Data Sheet 8 Revision 3.1 (Min/Max), 2014-02-11
Description
The BGA7L1N6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 728 MHz to
960 MHz. The LNA provides 13.3 dB gain and 0.90 dB noise figure at a current consumption of 4.4 mA in the
application configuration described in Chapter 3. The BGA7L1N6 is based upon Infineon Technologies‘ B7HF
Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage.
Pin Definition and Function
Table 1 Pin Definition and Function
Pin No. Name Function
1 GND Ground
2 VCC DC supply
3 AO LNA output
4 GND Ground
5 AI LNA input
6 PON Power on control
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Maximum Ratings
Data Sheet 9 Revision 3.1 (Min/Max), 2014-02-11
1 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Thermal Resistance
Table 2 Maximum Ratings
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Voltage at pin VCC VCC -0.3 – 3.6 V 1)
1) All voltages refer to GND-Node unless otherwise noted
Voltage at pin AI VAI -0.3 – 0.9 V –
Voltage at pin AO VAO -0.3 – VCC + 0.3 V –
Voltage at pin PON VPON -0.3 – VCC + 0.3 V –
Voltage at pin GNDRF VGNDRF -0.3 – 0.3 V –
Current into pin VCC ICC ––16mA–
RF input power PIN ––0dBm–
Total power dissipation,
TS<tbd.°C
2)
2) TS is measured on the ground lead at the soldering point
Ptot ––60mW–
Junction temperature TJ––150°C–
Ambient temperature range TA-40 – 85 °C –
Storage temperature range TSTG -65 – 150 °C –
ESD capability all pins VESD_HBM – – 2000 V according to
JESD22A-114
Table 3 Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
1) For calculation of RthJA please refer to Application Note Thermal Resistance
RthJS tbd. K/W
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Electrical Characteristics
Data Sheet 10 Revision 3.1 (Min/Max), 2014-02-11
2 Electrical Characteristics
2.1 Measured RF Characteristics Band 5
Table 4 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f= 869 - 894 MHz
1) Based on the application described in chapter 3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VCC 1.5 – 3.3 V –
Supply current ICC – 4.4 5.4 mA ON-mode
–0.23μA OFF-mode
Power On voltage Vpon 1.0 – Vcc V ON-mode
0 – 0.4 V OFF-mode
Power On current Ipon –510μA ON-mode
––1μA OFF-mode
Insertion power gain |S21|211.8 13.3 14.8 dB –
Noise figure2)
2) PCB losses are subtracted
NF –0.91.5dBZS=50Ω
Input return loss3)
3) Verification based on AQL; not 100% tested in production
RLin 10 25 – dB –
Output return loss3) RLout 10 17 – dB –
Reverse isolation3) 1/|S12|217 21 – dB –
Power gain settling time4)5)
4) To be within 1 dB of the final gain
5) Guaranteed by device design; not tested in production
tS–47μs OFF- to ON-mode
Inband input 1dB-compression
point3)
IP1dB -10 -6 – dBm –
Inband input 3rd-order intercept
point6)3)
6) Input power = -30 dBm for each tone
IIP3-6 -1 – dBm f1= 880 MHz
f2=f1+/-1 MHz
Stability5) k–> 1– f= 20 MHz ... 10 GHz
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BGA7L1N6
Electrical Characteristics
Data Sheet 11 Revision 3.1 (Min/Max), 2014-02-11
Table 5 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f= 869 - 894 MHz
1) Based on the application described in chapter 3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VCC 1.5 – 3.3 V –
Supply current ICC – 4.5 5.5 mA ON-mode
–0.23μA OFF-mode
Power On voltage Vpon 1.0 – Vcc V ON-mode
0 – 0.4 V OFF-mode
Power On current Ipon –1015μA ON-mode
––1μA OFF-mode
Insertion power gain |S21|211.8 13.3 14.8 dB –
Noise figure2)
2) PCB losses are subtracted
NF –0.91.5dBZS=50Ω
Input return loss3)
3) Verification based on AQL; not 100% tested in production
RLin 10 24 – dB –
Output return loss3) RLout 10 15 – dB –
Reverse isolation3) 1/|S12|218 22 – dB –
Power gain settling time4)5)
4) To be within 1 dB of the final gain
5) Guaranteed by device design; not tested in production
tS–36μs OFF- to ON-mode
Inband input 1dB-compression
point3)
IP1dB -7 -3 – dBm –
Inband input 3rd-order intercept
point6)3)
6) Input power = -30 dBm for each tone
IIP3-5 0 – dBm f1= 880 MHz
f2=f1+/-1 MHz
Stability5) k–> 1– f= 20 MHz ... 10 GHz
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BGA7L1N6
Electrical Characteristics
Data Sheet 12 Revision 3.1 (Min/Max), 2014-02-11
2.2 Measured RF Characteristics Band 8
Table 6 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f= 925 - 960 MHz
1) Based on the application described in chapter 3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VCC 1.5 – 3.3 V –
Supply current ICC – 4.4 5.4 mA ON-mode
–0.23μA OFF-mode
Power On voltage Vpon 1.0 – Vcc V ON-mode
0 – 0.4 V OFF-mode
Power On current Ipon –510μA ON-mode
––1μA OFF-mode
Insertion power gain |S21|211.5 13.0 14.5 dB –
Noise figure2)
2) PCB losses are subtracted
NF –0.91.5dBZS=50Ω
Input return loss3)
3) Verification based on AQL; not 100% tested in production
RLin 10 16 – dB –
Output return loss3) RLout 10 25 – dB –
Reverse isolation3) 1/|S12|217 21 – dB –
Power gain settling time4)5)
4) To be within 1 dB of the final gain
5) Guaranteed by device design; not tested in production
tS–47μs OFF- to ON-mode
Inband input 1dB-compression
point3)
IP1dB -10 -6 – dBm –
Inband input 3rd-order intercept
point6)3)
6) Input power = -30 dBm for each tone
IIP3-4 +1 – dBm f1= 940 MHz
f2=f1+/-1 MHz
Stability5) k–> 1– f= 20 MHz ... 10 GHz
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BGA7L1N6
Electrical Characteristics
Data Sheet 13 Revision 3.1 (Min/Max), 2014-02-11
Table 7 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f= 925 - 960 MHz
1) Based on the application described in chapter 3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VCC 1.5 – 3.3 V –
Supply current ICC – 4.5 5.5 mA ON-mode
–0.23μA OFF-mode
Power On voltage Vpon 1.0 – Vcc V ON-mode
0 – 0.4 V OFF-mode
Power On current Ipon –1015μA ON-mode
––1μA OFF-mode
Insertion power gain |S21|211.6 13.1 14.6 dB –
Noise figure2)
2) PCB losses are subtracted
NF –0.91.5dBZS=50Ω
Input return loss3)
3) Verification based on AQL; not 100% tested in production
RLin 10 17 – dB –
Output return loss3) RLout 10 23 – dB –
Reverse isolation3) 1/|S12|217 21 – dB –
Power gain settling time4)5)
4) To be within 1 dB of the final gain
5) Guaranteed by device design; not tested in production
tS–36μs OFF- to ON-mode
Inband input 1dB-compression
point3)
IP1dB -6 -2 – dBm –
Inband input 3rd-order intercept
point6)3)
6) Input power = -30 dBm for each tone
IIP3-3 +2 – dBm f1= 940 MHz
f2=f1+/-1 MHz
Stability5) k–> 1– f= 20 MHz ... 10 GHz
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BGA7L1N6
Electrical Characteristics
Data Sheet 14 Revision 3.1 (Min/Max), 2014-02-11
2.3 Measured RF Characteristics Band 17
Table 8 Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f= 734 - 746 MHz
1) Based on the application described in chapter 3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VCC 1.5 – 3.3 V –
Supply current ICC – 4.4 5.4 mA ON-mode
–0.23μA OFF-mode
Power On voltage Vpon 1.0 – Vcc V ON-mode
0 – 0.4 V OFF-mode
Power On current Ipon –510μA ON-mode
––1μA OFF-mode
Insertion power gain |S21|211.1 12.6 14.1 dB –
Noise figure2)
2) PCB losses are subtracted
NF –0.91.5dBZS=50Ω
Input return loss3)
3) Verification based on AQL; not 100% tested in production
RLin 69–dB–
Output return loss3) RLout 68–dB–
Reverse isolation3) 1/|S12|220 24 – dB –
Power gain settling time4)5)
4) To be within 1 dB of the final gain
5) Guaranteed by device design; not tested in production
tS–47μs OFF- to ON-mode
Inband input 1dB-compression
point3)
IP1dB -12 -8 – dBm –
Inband input 3rd-order intercept
point6)3)
6) Input power = -30 dBm for each tone
IIP3-7 -2 – dBm f1= 740 MHz
f2=f1+/-1 MHz
Stability5) k–> 1– f= 20 MHz ... 10 GHz
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BGA7L1N6
Electrical Characteristics
Data Sheet 15 Revision 3.1 (Min/Max), 2014-02-11
Table 9 Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f= 734 - 746 MHz
1) Based on the application described in chapter 3
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VCC 1.5 – 3.3 V –
Supply current ICC – 4.5 5.5 mA ON-mode
–0.23μA OFF-mode
Power On voltage Vpon 1.0 – Vcc V ON-mode
0 – 0.4 V OFF-mode
Power On current Ipon –1015μA ON-mode
––1μA OFF-mode
Insertion power gain |S21|211.1 12.6 14.1 dB –
Noise figure2)
2) PCB losses are subtracted
NF –0.91.5dBZS=50Ω
Input return loss3)
3) Verification based on AQL; not 100% tested in production
RLin 69–dB–
Output return loss3) RLout 68–dB–
Reverse isolation3) 1/|S12|221 25 – dB –
Power gain settling time4)5)
4) To be within 1 dB of the final gain
5) Guaranteed by device design; not tested in production
tS–36μs OFF- to ON-mode
Inband input 1dB-compression
point3)
IP1dB -10 -6 – dBm –
Inband input 3rd-order intercept
point6)3)
6) Input power = -30 dBm for each tone
IIP3-7 -2 – dBm f1= 740 MHz
f2=f1+/-1 MHz
Stability5) k–> 1– f= 20 MHz ... 10 GHz
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Application Information
Data Sheet 16 Revision 3.1 (Min/Max), 2014-02-11
3 Application Information
3.1 Application Circuit Schematic Band 5
Figure 2 Application Schematic BGA7L1N6
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Table 10 Bill of Materials
Name Part Type Package Manufacturer Function
C1 (optional) Chip capacitor 0402 Various DC block 1)
1) DC block might be realized with pre-filter in LTE applications
C2 (optional) ≥ 1nF2)
2) For data sheet characteristics 1nF used
0402 Various RF bypass 3)
3) RF bypass recommended to mitigate power supply noise
L1 Chip inductor 0402 Murata LQW type Input matching
N1 BGA7L1N6 TSNP-6-2 Infineon SiGe LNA
BGA7L1N6_B5_Schematic.vsd
N1 BGA7L1N6
AI, 5
PON, 6
GNDRF, 4
GND, 1
AO, 3
VCC, 2
C1
1nF
(optional)
L1
20nH
PON
VCC
C2
1nF
(optional)
RFIN
Band 5
RFOUT
Band 5
@neon
BGA7L1N6
Application Information
Data Sheet 17 Revision 3.1 (Min/Max), 2014-02-11
3.2 Application Circuit Schematic Band 8
Figure 3 Application Schematic BGA7L1N6
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Table 11 Bill of Materials
Name Part Type Package Manufacturer Function
C1 (optional) Chip capacitor 0402 Various DC block 1)
1) DC block might be realized with pre-filter in LTE applications
C2 (optional) ≥ 1nF2)
2) For data sheet characteristics 1nF used
0402 Various RF bypass 3)
3) RF bypass recommended to mitigate power supply noise
L1 Chip inductor 0402 Murata LQW type Input matching
N1 BGA7L1N6 TSNP-6-2 Infineon SiGe LNA
BGA7L1N6_B8_Schematic.vsd
N1 BGA7L1N6
AI, 5
PON, 6
GNDRF, 4
GND, 1
AO, 3
VCC, 2
C1
1nF
(optional)
L1
20nH
PON
VCC
C2
1nF
(optional)
RFIN
Band 8
RFOUT
Band 8
@neon
BGA7L1N6
Application Information
Data Sheet 18 Revision 3.1 (Min/Max), 2014-02-11
3.3 Application Circuit Schematic Band 17
Figure 4 Application Schematic BGA7L1N6
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Table 12 Bill of Materials
Name Part Type Package Manufacturer Function
C1 (optional) Chip capacitor 0402 Various DC block 1)
1) DC block might be realized with pre-filter in LTE applications
C2 (optional) ≥ 1nF2)
2) For data sheet characteristics 1nF used
0402 Various RF bypass 3)
3) RF bypass recommended to mitigate power supply noise
L1 Chip inductor 0402 Murata LQW type Input matching
N1 BGA7L1N6 TSNP-6-2 Infineon SiGe LNA
BGA7L1N6_B17_Schematic.vsd
N1 BGA7L1N6
AI, 5
PON, 6
GNDRF, 4
GND, 1
AO, 3
VCC, 2
C1
1nF
(optional)
L1
22nH
PON
VCC
C2
1nF
(optional)
RFIN
Band 17
RFOUT
Band 17
@ BGH7XIN6 U1. 0 ‘ E21“ GNU F’UN VCC IEI Figure 6 Application Board Cross-Seciion Data Sheet 19
BGA7L1N6
Application Information
Data Sheet 19 Revision 3.1 (Min/Max), 2014-02-11
Figure 5 Drawing of Application Board
Figure 6 Application Board Cross-Section
BGA7x1N6_Application_Board.vsd
Copper
35µm
Vias Vias
Ro4003, 0.2mm
FR4,0.8mm
BGA7x1N6_application _board _sideview.vsd
infineon 7 /§/%:¢ 7% f 7%; D W + 7% @ @ /////////////A > U _.,i El ,i 9 vi
BGA7L1N6
Package Information
Data Sheet 20 Revision 3.1 (Min/Max), 2014-02-11
4 Package Information
Figure 7 TSNP-6-2 Package Outline (top, side and bottom views)
Figure 8 Footprint Recommendation TSNP-6-2
Figure 9 Marking Layout (top view)
0.02 MAX.
±0.05
0.7
±0.05
0.2
±0.05
1)
±0.05
0.2
1)
0.4
1.1±0.05
1) Dimension applies to plated terminals
52
6
4
1
3
Top view Bottom view
Pin 1 marking
TSNP-6-2-PO V01
0.8±0.05
+0.025
0.375-0.015
Type code
Monthly data code
TSNP-6-2-MK V01
Pin 1 marking
1
infineon
BGA7L1N6
Package Information
Data Sheet 21 Revision 3.1 (Min/Max), 2014-02-11
Figure 10 Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000)
2
0.5
Pin 1
marking
TSNP-6-2-TP V01
0.85
1.25
8
Published by Infineon Technologies AG
www.infineon.com