Texas Instruments 的 TPS82130 规格书

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TPS82130 17-V Input 3-A Step-Down Converter MicroSiP™ Module with Integrated
Inductor
1 Features
• 3-mm × 2.8-mm × 1.5-mm MicroSiP™ package
• 3-V to 17-V input range
• 3-A continuous output current
• DCS-Control™ topology
• Power save mode for light-load efficiency
• 20-µA operating quiescent current
• 0.9-V to 6-V adjustable output voltage
• 100% duty cycle for lowest dropout
• Power-good output
• Programmable soft start-up with tracking
• Thermal shutdown protection
• –40°C to 125°C operating temperature range
• Create a custom design using the TPS82130 with
the WEBENCH® Power Designer
2 Applications
•Industrial applications
• Telecom and networking applications
•Solid state drives
3 Description
The TPS82130 is a 17-V input 3-A step-down
converter MicroSiP power module optimized for
small solution size and high efficiency. The module
integrates a synchronous step-down converter and
an inductor to simplify design, reduce external
components, and save PCB area. The low profile and
compact solution is suitable for automated assembly
by standard surface mount equipment.
To maximize efficiency, the converter operates in
PWM mode with a nominal switching frequency of
2 MHz and automatically enters power save mode
operation at light load currents. In power save mode,
the device operates with 20-µA (typical) quiescent
current. Using the DCS-Control topology, the device
achieves excellent load transient performance and
accurate output voltage regulation.
Device Information
PART NUMBER PACKAGE(1) BODY SIZE (NOM)
TPS82130 µSiL (8) 3.00 mm × 2.80 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
TPS82130
12 V
R1
124kΩ
R2
100kΩ
VIN
POWER GOOD
VIN
EN
C2
22µF
R3
100kΩ
VOUT
1.8 V/3 A
C1
10µF
SS/TR
GND
PG
FB
VOUT
C3
3.3nF
Copyright © 2016, Texas Instruments Incorporated
Simplified Schematic 1.8-V Output Application
Load (A)
Efficiency (%)
50
60
70
80
90
100
1m 10m 100m 1 5
D017
VOUT = 1.0 V
VOUT = 1.8 V
VOUT = 2.5 V
VOUT = 3.3 V
12-V Input Voltage Efficiency
TPS82130
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommend Operating Conditions.............................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics.............................................5
6.6 Typical Characteristics................................................6
7 Detailed Description........................................................7
7.1 Overview.....................................................................7
7.2 Functional Block Diagram...........................................7
7.3 Feature Description.....................................................7
7.4 Device Functional Modes............................................9
8 Application and Implementation.................................. 11
8.1 Application Information..............................................11
8.2 Typical Applications...................................................11
9 Power Supply Recommendations................................17
10 Layout...........................................................................18
10.1 Layout Guidelines................................................... 18
10.2 Layout Example...................................................... 18
10.3 Thermal Consideration............................................18
11 Device and Documentation Support..........................19
11.1 Device Support........................................................19
11.2 Receiving Notification of Documentation Updates.. 19
11.3 Support Resources................................................. 19
11.4 Trademarks............................................................. 19
11.5 Glossary.................................................................. 19
11.6 Electrostatic Discharge Caution.............................. 19
12 Mechanical, Packaging, and Orderable
Information.................................................................... 20
12.1 Tape and Reel Information......................................24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (November 2018) to Revision E (October 2021) Page
• Updated the numbering format for tables, figures, and cross-references throughout the document. ................1
• Corrected grammar throughout document..........................................................................................................1
Changes from Revision C (January 2017) to Revision D (November 2018) Page
• Added Tape and Reel Information.................................................................................................................... 24
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5 Pin Configuration and Functions
1EN
2VIN
3GND
4VOUT
8 SS/TR
7 PG
6 FB
5 VOUT
Not to scale
Thermal
Pad
Figure 5-1. 8-Pin µSiL Package (SIL0008C Top View)
Table 5-1. Pin Functions
PIN I/O DESCRIPTION
NAME NO.
EN 1 I Enable pin. Pull High to enable the device. Pull Low to disable the device. This pin has an
internal pulldown resistor of typically 400 kΩ when the device is disabled.
VIN 2 PWR Input pin
GND 3 Ground pin
VOUT 4, 5 PWR Output pin
FB 6 I Feedback reference pin. An external resistor divider connected to this pin programs the
output voltage.
PG 7 O Power-good open-drain output pin. A pullup resistor can be connected to any voltage less
than 6 V. Leave it open if it is not used.
SS/TR 8 I Soft start-up and voltage tracking pin. An external capacitor connected to this pin sets the
internal reference voltage rising time.
Exposed Thermal Pad The exposed thermal pad must be connected to the GND pin. Must be soldered to
achieve appropriate power dissipation and mechanical reliability.
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6 Specifications
6.1 Absolute Maximum Ratings
MIN MAX UNIT
Voltage at pins(1) (2)
VIN –0.3 20
V
EN, SS/TR –0.3 VIN + 0.3
PG, FB –0.3 7
VOUT 0 7
Sink current(1) PG 10 mA
Module operating temperature(1) –40 125 °C
Storage temperature(1) –55 125 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.
6.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V
Charged device model (CDM), per JEDEC specification JESD22-
C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommend Operating Conditions
Over operating free-air temperature range, unless otherwise noted.
MIN MAX UNIT
VIN Input voltage 3 17 V
VPG Power good pull-up resistor voltage 6 V
VOUT Output voltage 0.9 6 V
IOUT Output current 0 3 A
TJModule operating temperature range for 100,000 hours lifetime(1) –40 110 °C
(1) The module operating temperature range includes module self temperature rise and IC junction temperature rise. In applications where
high power dissipation is present, the maximum operating temperature or maximum output current must be derated. For applications
where the module operates continuously at 125 °C temperature, the maximum lifetime is reduced to 50,000 hours.
6.4 Thermal Information
THERMAL METRIC(1) TPS82130
(JEDEC 51-5) TPS82130EVM-720 UNIT
RθJA Junction-to-ambient thermal resistance 58.2 46.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 9.4 9.4 °C/W
RθJB Junction-to-board thermal resistance 14.4 14.4 °C/W
ψJT Junction-to-top characterization parameter 0.9 0.9 °C/W
ψJB Junction-to-board characterization parameter 14.2 14.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 21.3 21.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report. Theta-JA can be improved with a custom PCB design containing thermal vias where possible.
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6.5 Electrical Characteristics
TJ = –40°C to 125°C and VIN = 3.0 V to 17 V. Typical values are at TJ = 25°C and VIN = 12 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY
IQQuiescent current into VIN No load, device not switching 20 35 µA
ISD Shutdown current into VIN EN = Low 1.5 7.4 µA
VUVLO Undervoltage lockout threshold VIN falling 2.6 2.7 2.8 V
VIN rising 2.8 2.9 3.0 V
TJSD Thermal shutdown threshold TJ rising 160 °C
TJ falling 140 °C
LOGIC INTERFACE (EN)
VIH High-level input voltage 0.9 0.65 V
VIL Low-level input voltage 0.45 0.3 V
Ilkg(EN) Input leakage current into the EN
pin
EN = High 0.01 1 µA
CONTROL (SS/TR, PG)
ISS/TR SS/TR pin source current 2.1 2.5 2.8 µA
VPG Power-good threshold VOUT rising, referenced to VOUT nominal 92% 95% 99%
VOUT falling, referenced to VOUT nominal 87% 90% 94%
VPG,OL Power-good low-level voltage Isink = 2 mA 0.1 0.3 V
Ilkg(PG) Input leakage current into the PG
pin
VPG = 1.8 V 1 400 nA
OUTPUT
VFB Feedback regulation voltage
PWM mode 785 800 815
mV
TJ = 0°C to 85°C 788 800 812
PSM COUT = 22 µF 785 800 823
COUT = 2 × 22 µF, TJ = 0°C to 85°C 788 800 815
Ilkg(FB) Feedback input leakage current VFB = 0.8 V 1 100 nA
Line regulation IOUT = 1 A, VOUT = 1.8 V 0.002 %/V
Load regulation IOUT = 0.5 A to 3 A, VOUT = 1.8 V 0.12 %/A
POWER SWITCH
RDS(on
)
High-side FET on-resistance ISW = 500 mA, VIN ≥ 6 V 90 170
mΩ
ISW = 500 mA, VIN = 3 V 120
Low-side FET on-resistance ISW = 500 mA, VIN ≥ 6 V 40 70
ISW = 500 mA, VIN = 3 V 50
RDP Dropout resistance 100% mode, VIN ≥ 6 V 125 mΩ
100% mode, VIN = 3 V 160
ILIMF High-side FET switch current limit VIN = 6 V, TA = 25°C 3.6 4.2 4.9 A
fSW PWM switching frequency IOUT = 1 A, VOUT = 1.8 V 2.0 MHz
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6.6 Typical Characteristics
Module Temperature (°C)
'URSRXW5HVLVWDQFHP
-40 -20 0 20 40 60 80 100 120
50
100
150
200
250
D014
VIN = 3.0 V
VIN = 6.0 V
Figure 6-1. Dropout Resistance
Input Voltage (V)
4XLHVFHQW&XUUHQW$
3 5 7 9 11 13 15 17
0
10
20
30
40
50
D025
TJ = -40°C
TJ = 25°C
TJ = 85°C
TJ = 125°C
Figure 6-2. Quiescent Current
Input Voltage (V)
6KXWGRZQ&XUUHQW$
3 5 7 9 11 13 15 17
0
2
4
6
8
D026
TJ = -40°C
TJ = 25°C
TJ = 85°C
TJ = 125°C
Figure 6-3. Shutdown Current
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7 Detailed Description
7.1 Overview
The TPS82130 synchronous step-down converter MicroSiP power module is based on DCS-Control (Direct
Control with Seamless transition into power save mode). This is an advanced regulation topology that combines
the advantages of hysteretic and voltage mode control.
The DCS-Control topology operates in PWM (pulse width modulation) mode for medium to heavy load conditions
and in PSM (power save mode) at light load currents. In PWM mode, the converter operates with its nominal
switching frequency of 2.0 MHz having a controlled frequency variation over the input voltage range. As the load
current decreases, the converter enters power save mode, reducing the switching frequency and minimizing the
quiescent current of the IC to achieve high efficiency over the entire load current range. DCS-Control supports
both operation modes using a single building block and therefore has a seamless transition from PWM to PSM
without effects on the output voltage. The TPS82130 offers excellent DC voltage regulation and load transient
regulation, combined with low output voltage ripple, minimizing interference with RF circuits.
7.2 Functional Block Diagram
VOUT
FB
GND
Direct Control
and
Compensation
Timer
ton
Comparator
Ramp
Error Amplifier
DCS - Control TM
MOSFET Driver
Control Logic
High Side
Current Sense
VIN
Bandgap
Undervoltage Lockout
Thermal Shutdown
EN
PG
VFB
VREF
VREF
400kΩ(1)
Note:
(1) When the device is enabled, the 400 k resistor is disconnected.
(2) The integrated inductor of 1 µH in the module.
Ω
L(2)
Voltage
Clamp
VIN
VREF
SS/TR 22pF
Copyright © 2016, Texas Instruments Incorporated
7.3 Feature Description
7.3.1 PWM and PSM Operation
The TPS82130 includes an on-time (tON) circuitry. tON, in steady-state operation in PWM and PSM modes, is
estimated as:
(1)
In PWM mode, the TPS82130 operates with pulse width modulation in continuous conduction mode (CCM) with
a tON shown in Equation 1 at medium and heavy load currents. A PWM switching frequency of typically 2.0 MHz
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is achieved by this tON circuitry. The device operates in PWM mode as long as the output current is higher than
half of the ripple current of the inductor estimated by Equation 2.
L
VV
tI OUTIN
ONL
-
´=D
(2)
To maintain high efficiency at light loads, the device enters power save mode seamlessly when the load current
decreases. This happens when the load current becomes smaller than half of the ripple current of the inductor.
In PSM, the converter operates with reduced switching frequency and with a minimum quiescent current to
maintain high efficiency. PSM is also based on the tON circuitry. The switching frequency in PSM is estimated as:
L
VV
V
V
t
I2
f
OUTIN
OUT
IN
2
ON
OUT
PSM -
´´
´
=
(3)
In PSM, the output voltage rises slightly above the nominal output voltage in PWM mode. This effect is reduced
by increasing the output capacitance. The output voltage accuracy in PSM operation is reflected in Section 6.5
and given for a 22-µF output capacitor.
For very small output voltages, an absolute minimum on time of approximately 80 ns is kept to limit switching
losses. The operating frequency is thereby reduced from its nominal value, which keeps efficiency high. Also, the
off time can reach its minimum value at high duty cycles. The output voltage remains regulated in such cases.
When VIN decreases to typically 15% above VOUT, the TPS82130 cannot enter power save mode, regardless of
the load current. The device maintains output regulation in PWM mode.
7.3.2 Low Dropout Operation (100% Duty Cycle)
The TPS82130 offers a low input to output voltage differential by entering 100% duty cycle mode. In this mode,
the high-side MOSFET switch is constantly turned on. This is particularly useful in battery powered applications
to achieve the longest operation time by taking full advantage of the whole battery voltage range. The minimum
input voltage to maintain a minimum output voltage is given by:
DPOUT(min)OUT(min)IN RIVV ´+=
(4)
where
• RDP = Resistance from VIN to VOUT, including high-side FET on-resistance and DC resistance of the inductor
• VOUT(min) = Minimum output voltage the load can accept
7.3.3 Switch Current Limit
The switch current limit prevents the device from high inductor current and from drawing excessive current from
the battery or input voltage rail. Excessive current can occur with a heavy load/shorted output circuit condition.
If the inductor peak current reaches the switch current limit after a propagation delay of typically 30 ns, the
high-side FET is turned off and the low-side FET is turned on to ramp down the inductor current.
7.3.4 Undervoltage Lockout
To avoid mis-operation of the device at low input voltages, an undervoltage lockout is implemented, which shuts
down the device at voltages lower than VUVLO with a hysteresis of 200 mV.
7.3.5 Thermal Shutdown
The device goes into thermal shutdown and stops switching once the junction temperature exceeds TJSD. Once
the device temperature falls below the threshold by 20°C, the device returns to normal operation automatically.
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7.4 Device Functional Modes
7.4.1 Enable and Disable (EN)
The device is enabled by setting the EN pin to a logic High. Accordingly, shutdown mode is forced if the EN pin
is pulled Low with a shutdown current of typically 1.5 μA.
An internal 400-kΩ pulldown resistor is connected to the EN pin when the EN pin is Low. The pulldown resistor is
disconnected when the EN pin is High.
7.4.2 Soft Start-Up (SS/TR)
The internal voltage clamp controls the output voltage slope during start-up. This avoids excessive inrush current
and ensures a controlled output voltage rise time. When the EN pin is pulled high, the device starts switching
after a delay of typically 55 μs and the output voltage rises with a slope controlled by an external capacitor
connected to the SS/TR pin. Using a very small capacitor or leaving the SS/TR pin floating provides the fastest
start-up time.
The TPS82130 is able to start into a pre-biased output capacitor. During the pre-biased start-up, both the power
MOSFETs are not allowed to turn on until the internal voltage clamp sets an output voltage above the pre-bias
voltage.
When the device is in shutdown, undervoltage lockout, or thermal shutdown, the capacitor connected to the
SS/TR pin is discharged by an internal resistor. Returning from those states causes a new start-up sequence.
7.4.3 Voltage Tracking (SS/TR)
The SS/TR pin is externally driven by another voltage source to achieve output voltage tracking. The application
circuit is shown in Figure 7-1.
R2
VOUT1
R1
TPS82130
VOUT2
R4
R3
SS/TR FB
Copyright © 2016, Texas Instruments Incorporated
Figure 7-1. Output Voltage Tracking
When the SS/TR pin voltage is between 50 mV and 1.2 V, the VOUT2 tracks the VOUT1 as described in
Equation 5.
4R
4R3R
2R1R
2R
64.0
V
V
1OUT
2OUT +
´
+
´»
(5)
When the SS/TR pin voltage is above 1.2 V, the voltage tracking is disabled and the FB pin voltage is regulated
at 0.8 V. To decrease the SS/TR pin voltage, the device does not sink current from the output, so the resulting
decreases of the output voltage can be slower than the SS/TR pin voltage if the load is light. When driving the
SS/TR pin with an external voltage, do not exceed the voltage rating of the SS/TR pin which is VIN + 0.3 V.
Details about tracking and sequencing circuits are found in the Sequencing and Tracking With the TPS621-
Family and TPS821-Family Application Report.
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7.4.4 Power-Good Output (PG)
The device has a power-good (PG) output. The PG pin goes high impedance once the output is above 95% of
the nominal voltage, and is driven low once the output voltage falls below typically 90% of the nominal voltage.
The PG pin is an open-drain output and is specified to sink up to 2 mA. The power good output requires a pullup
resistor connecting to any voltage rail less than 6 V.
The PG signal can be used for sequencing of multiple rails by connecting it to the EN pin of other converters.
Leave the PG pin floating when it is not used. Table 7-1 shows the PG pin logic.
Table 7-1. Power Good Pin Logic
DEVICE STATE PG LOGIC STATUS
HIGH IMPEDANCE LOW
Enable (EN=High) VFB ≥ VTH_PG √
VFB ≤ VTH_PG √
Shutdown (EN = Low) √
UVLO 0.7 V < VIN < VUVLO √
Thermal Shutdown TJ > TSD √
Power Supply Removal VIN < 0.7 V √
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8 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
8.1 Application Information
The output voltage of the TPS82130 is adjusted by component selection. The following section discusses the
design of the external components to complete the power supply design for several input and output voltage
options by using typical applications as a reference.
8.2 Typical Applications
8.2.1 1.8-V Output Application
TPS82130
12 V
R1
124kΩ
R2
100kΩ
VIN
POWER GOOD
VIN
EN
C2
22µF
R3
100kΩ
VOUT
1.8 V/3 A
C1
10µF
SS/TR
GND
PG
FB
VOUT
C3
3.3nF
Copyright © 2016, Texas Instruments Incorporated
Figure 8-1. 1.8-V Output Application
8.2.1.1 Design Requirements
For this design example, use the following as the input parameters.
Table 8-1. Design Parameters
DESIGN PARAMETER EXAMPLE VALUE
Input voltage range 12 V
Output voltage 1.8 V
Output ripple voltage < 20 mV
Output current rating 3 A
The components used for measurements are given in the following table.
Table 8-2. List of Components
REFERENCE DESCRIPTION MANUFACTURER
C1 10 µF, 25 V, X7R, ±20%, size 1206,
C3216X7R1E106M160AE TDK
C2 22 µF, 10 V, ±20%, X7S, size 0805,
C2012X7S1A226M125AC TDK
C3 3300 pF, 50 V, ±5%, C0G/NP0, size 0603,
GRM1885C1H332JA01D Murata
R1, R2, R3 Standard
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8.2.1.2 Detailed Design Procedure
8.2.1.2.1 Custom Design with WEBENCH® Tools
Click here to create a custom design using the TPS82130 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT, and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. The WEBENCH Power Designer provides you with a customized schematic along with a list of materials with
real time pricing and component availability.
4. In most cases, you will also be able to:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand the thermal performance of your board
• Export your customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share your design with colleagues
5. Get more information about WEBENCH tools at www.ti.com/WEBENCH.
8.2.1.2.2 Setting the Output Voltage
The output voltage is set by an external resistor divider according to Equation 6:
OUT FB
R1 R1
V = V 1 + = 0.8 V 1 +
R2 R2
æ ö æ ö
´ ´
ç ÷ ç ÷
è ø è ø
(6)
R2 should not be higher than 100 kΩ to achieve high efficiency at light load while providing acceptable noise
sensitivity. Larger currents through R2 improve noise sensitivity and output voltage accuracy. Figure 8-1 shows
the external resistor divider value for a 1.8-V output. Choose appropriate resistor values for other outputs.
In case the FB pin gets opened, the device clamps the output voltage at the VOUT pin internally to
approximately 7 V.
8.2.1.2.3 Input and Output Capacitor Selection
For the best output and input voltage filtering, low-ESR ceramic capacitors are required. The input capacitor
minimizes input voltage ripple, suppresses input voltage spikes, and provides a stable system rail for the device.
A 10-µF or larger input capacitor is required. The output capacitor value can range from 22 μF up to more than
400 μF. Higher values are possible as well and can be evaluated through the transient response. Larger soft
start times are recommended for higher output capacitances.
High capacitance ceramic capacitors have a DC bias effect, which will have a strong influence on the final
effective capacitance. Therefore the right capacitor value has to be chosen carefully. Package size and voltage
rating in combination with dielectric material are responsible for differences between the rated capacitor value
and the effective capacitance.
8.2.1.2.4 Soft Start-Up Capacitor Selection
A capacitance connected between the SS/TR pin and the GND allows programming the start-up slope of the
output voltage. A constant current of 2.5 μA charges the external capacitor. The capacitance required for a given
soft start-up time for the output voltage is given by:
V25.1
I
tC TR/SS
TR/SSTR/SS ´=
(7)
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8.2.1.3 Application Performance Curves
TA = 25°C, VIN = 12 V, VOUT = 1.8 V, unless otherwise noted.
Load (A)
Efficiency (%)
50
60
70
80
90
100
1m 10m 100m 1 5
D001
VIN = 3.3 V
VIN = 5.0 V
VIN = 12 V
Figure 8-2. Efficiency, VOUT = 1 V
Input Voltage (V)
Efficiency (%)
3 5 7 9 11 13 15 17
50
60
70
80
90
100
D019
IOUT = 0.1 A
IOUT = 1.0 A
IOUT = 3.0 A
Figure 8-3. Efficiency, VOUT = 1.0 V
Load (A)
Efficiency (%)
50
60
70
80
90
100
1m 10m 100m 1 5
D002
VIN = 3.3 V
VIN = 5.0 V
VIN = 12 V
Figure 8-4. Efficiency, VOUT = 1.8 V
Input Voltage (V)
Efficiency (%)
3 5 7 9 11 13 15 17
50
60
70
80
90
100
D020
IOUT = 0.1 A
IOUT = 1.0 A
IOUT = 3.0 A
Figure 8-5. Efficiency, VOUT = 1.8 V
Load (A)
Efficiency (%)
50
60
70
80
90
100
1m 10m 100m 1 5
D003
VIN = 3.3 V
VIN = 5.0 V
VIN = 12 V
Figure 8-6. Efficiency, VOUT = 2.5 V
Input Voltage (V)
Efficiency (%)
3 5 7 9 11 13 15 17
50
60
70
80
90
100
D021
IOUT = 0.1 A
IOUT = 1.0 A
IOUT = 3.0 A
Figure 8-7. Efficiency, VOUT = 2.5 V
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TEXAS INSTRUMENTS mo mu mo 100
Load (A)
Efficiency (%)
50
60
70
80
90
100
1m 10m 100m 1 5
D004
VIN = 5.0 V
VIN = 12 V
Figure 8-8. Efficiency, VOUT = 3.3 V
Input Voltage (V)
Efficiency (%)
5 7 9 11 13 15 17
50
60
70
80
90
100
D022
IOUT = 0.1 A
IOUT = 1.0 A
IOUT = 3.0 A
Figure 8-9. Efficiency, VOUT = 3.3 V
Load (A)
Efficiency (%)
50
60
70
80
90
100
1m 10m 100m 1 5
D023
VIN = 12 V
Figure 8-10. Efficiency, VOUT = 5.0 V
Input Voltage (V)
Efficiency (%)
6 7 8 9 10 11 12 13 14 15 16 17
50
60
70
80
90
100
D024
IOUT = 0.1 A
IOUT = 1.0 A
IOUT = 3.0 A
Figure 8-11. Efficiency, VOUT = 5 V
Ambient Temperature (°C)
Output Current (A)
45 55 65 75 85 95 105 115 125
0
1
2
3
4
D015
VIN = 3.3 V
VIN = 5.0 V
VIN = 12 V
VOUT = 1.8 V θJA = 46.1°C/W
Figure 8-12. Thermal Derating, VOUT = 1.8 V
Ambient Temperature (°C)
Output Current (A)
45 55 65 75 85 95 105 115 125
0
1
2
3
4
D016
VIN = 5.0 V
VIN = 12 V
VOUT = 3.3 V θJA = 46.1°C/W
Figure 8-13. Thermal Derating, VOUT = 3.3 V
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I TEXAS INSTRUMENTS
Ambient Temperature (°C)
Output Current (A)
45 55 65 75 85 95 105 115 125
0
1
2
3
4
D027
VIN = 3.3 V
VIN = 5.0 V
VIN = 12 V
Figure 8-14. Thermal Derating, VOUT = 1.0 V
Load (A)
Output Voltage Accuracy (%)
-1.0
-0.5
0.0
0.5
1.0
1m 10m 100m 1 5
D005
TA = -40°C
TA = 25°C
TA = 85°C
VIN = 12 V
Figure 8-15. Load Regulation
Input Voltage (V)
Output Voltage Accuracy (%)
3 5 7 9 11 13 15 17
-1.0
-0.5
0.0
0.5
1.0
D006
TA = -40°C
TA = 25°C
TA = 85°C
IOUT = 1 A
Figure 8-16. Line Regulation
Load (A)
Switching Frequency (Hz)
103
104
105
106
5x106
1m 10m 100m 1 5
D009
TA = 25°C
TA = -40°C
TA = 85°C
VOUT = 1.8 V VIN = 12 V
Figure 8-17. Switching Frequency
Input Voltage (V)
Switching Frequency (Hz)
3 5 7 9 11 13 15 17
0x100
1x106
2x106
3x106
D018
VOUT = 1.0 V
VOUT = 1.8 V
VOUT = 2.5 V
VOUT = 3.3 V
IOUT = 1 A
Figure 8-18. Switching Frequency
Time - 500ns/DIV
D007
VIN
50mV/DIV
AC
VOUT
10mV/DIV
AC
IOUT = 3 A
Figure 8-19. Input and Output Ripple in PWM Mode
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I TEXAS INSTRUMENTS
7LPHV',9
D008
VIN
20mV/DIV
AC
VOUT
10mV/DIV
AC
No Load
Figure 8-20. Input and Output Ripple in PSM Mode
7LPHV',9
D010
IOUT
2A/DIV
VOUT
50mV/DIV
AC
IOUT = 0 A to 3 A, 1 A/µs
Figure 8-21. Load Transient
7LPHV',9
D011
IOUT
2A/DIV
VOUT
50mV/DIV
AC
IOUT = 0.5 A to 3 A, 1 A/µs
Figure 8-22. Load Transient
7LPHV',9
D012
IOUT
2A/DIV
VOUT
1V/DIV
VPG
5V/DIV
VEN
5V/DIV
No Load
Figure 8-23. Startup without Load
7LPHV',9
D013
IOUT
2A/DIV
VOUT
1V/DIV
VPG
5V/DIV
VEN
5V/DIV
ROUT = 0.68Ω
Figure 8-24. Startup / Shutdown with Resistance Load
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l TEXAS INSTRUMENTS
9 Power Supply Recommendations
The devices are designed to operate from an input voltage supply range between 3 V and 17 V. The average
input current of the TPS82130 is calculated as:
IN
OUTOUT
IN V
IV
1
I´
´
h
=
(8)
Ensure that the power supply has a sufficient current rating for the applications.
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10 Layout
10.1 Layout Guidelines
• TI recommends placing all components as close as possible to the IC. The input capacitor placement
specifically must be closest to the VIN and GND pins of the device.
• Use wide and short traces for the main current paths to reduce the parasitic inductance and resistance.
• To enhance heat dissipation of the device, the exposed thermal pad should be connected to bottom or
internal layer ground planes using vias.
• Refer to Figure 10-1 for an example of component placement, routing, and thermal design.
10.2 Layout Example
VIN
GND
VOUT
C3
C2
C1
VIN
VOUT
FB
GND
EN
PG
SS/TR
VOUT
R1
R2
Figure 10-1. TPS82130 PCB Layout
10.3 Thermal Consideration
The output current of the TPS82130 needs to be derated when the device operates in a high ambient
temperature or delivers high output power. The amount of current derating is dependent upon the input voltage,
output power, PCB layout design, and environmental thermal condition. Care should especially be taken in
applications where the localized PCB temperature exceeds 65°C.
The TPS82130 module temperature must be kept less than the maximum rating of 125°C. Three basic
approaches for enhancing thermal performance are below:
• Improve the power dissipation capability of the PCB design.
• Improve the thermal coupling of the TPS82130 to the PCB.
• Introduce airflow into the system.
To estimate approximate module temperature of TPS82130, apply the typical efficiency stated in this data sheet
to the desired application condition to find the power dissipation of the module. Then, calculate the module
temperature rise by multiplying the power dissipation by its thermal resistance. For more details on how to
use the thermal parameters in real applications, see the Thermal Characteristics of Linear and Logic Packages
Using JEDEC PCB Designs Application Report and Semiconductor and IC Package Thermal Metrics Application
Report.
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I TEXAS INSTRUMENTS Am
11 Device and Documentation Support
11.1 Device Support
11.1.1 Development Support
11.1.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
11.1.1.2 Custom Design with WEBENCH® Tools
Click here to create a custom design using the TPS82130 device with the WEBENCH® Power Designer.
1. Start by entering your VIN, VOUT, and IOUT requirements.
2. Optimize your design for key parameters like efficiency, footprint and cost using the optimizer dial and
compare this design with other possible solutions from Texas Instruments.
3. The WEBENCH Power Designer provides you with a customized schematic along with a list of materials with
real time pricing and component availability.
4. In most cases, you will also be able to:
• Run electrical simulations to see important waveforms and circuit performance
• Run thermal simulations to understand the thermal performance of your board
• Export your customized schematic and layout into popular CAD formats
• Print PDF reports for the design, and share your design with colleagues
5. Get more information about WEBENCH tools at www.ti.com/WEBENCH.
11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
11.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
11.4 Trademarks
MicroSiP™ is a trademark of TI.
DCS-Control™, and TI E2E™ are trademarks of Texas Instruments.
WEBENCH® are registered trademarks of Texas Instruments.
All trademarks are the property of their respective owners.
11.5 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
11.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
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12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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{5‘ TEXAS INSTRUMENTS wwwu com
www.ti.com
PACKAGE OUTLINE
C
B2.9
2.7 A
3.1
2.9
(45 X0.25)
PIN 1 ID
2X
1.95
6X 0.65
(0.1)
TYP
8X 0.42
0.38
8X 0.52
0.48
1.53 MAX
1.9±0.1
1.1±0.1
(2.5)
(2)
MicroSiP - 1.53 mm max heightSIL0008D
MICRO SYSTEM IN PACKAGE
4221520/A 07/2015
PIN 1 INDEX
AREA
PICK AREA
NOTE 3
0.08 C
0.1 C A B
0.05 C
1
45
8
SYMM
SYMM
THERMAL PAD
EXPOSED
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Pick and place nozzle 1.3 mm or smaller recommended.
4. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
MicroSiP is a trademark of Texas Instruments
TM
0.08 C
SCALE 4.000
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I TEXAS INSTRUMENTS EXAMPLE BOARD LAYOUT w u com
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EXAMPLE BOARD LAYOUT
(1.1)
8X (0.5)
0.05 MIN
ALL SIDES
8X (0.4)
(2.1)
6X (0.65)
(0.75)
( ) VIA
TYP
0.2
(1.9)
(R ) TYP0.05
MicroSiP - 1.53 mm max heightSIL0008D
MICRO SYSTEM IN PACKAGE
4221520/A 07/2015
SYMM
SYMM
1
45
8
SOLDER MASK DEFINED
LAND PATTERN EXAMPLE
SCALE:20X
NOTES: (continued)
5. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
TM
METAL UNDER
SOLDER MASK
SOLDER MASK
OPENING
NOT TO SCALE
DETAIL
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I TEXAS INSTRUMENTS EXAMPLE STENCIL DESIGN w u com
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EXAMPLE STENCIL DESIGN
(R ) TYP0.05
8X (0.4)
(1.04)
8X (0.5)
6X (0.65)
(2.1)
(0.85)
(1.05)
MicroSiP - 1.53 mm max heightSIL0008D
MICRO SYSTEM IN PACKAGE
4221520/A 07/2015
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
TM
SYMM
SYMM
METAL
TYP
BASED ON 0.125 mm THICK STENCIL
SOLDER PASTE EXAMPLE
EXPOSED PAD
85% PRINTED SOLDER COVERAGE BY AREA
SCALE:30X
SOLDER MASK EDGE
1
45
8
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12.1 Tape and Reel Information
Reel Width (W1)
REEL DIMENSIONS
A0
B0
K0
W
Dimension designed to accommodate the component length
Dimension designed to accommodate the component thickness
Overall width of the carrier tape
Pitch between successive cavity centers
Dimension designed to accommodate the component width
TAPE DIMENSIONS
K0 P1
B0 W
A0
Cavity
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Pocket Quadrants
Sprocket Holes
Q1 Q1
Q2 Q2
Q3 Q3Q4 Q4
Reel
Diameter
User Direction of Feed
P1
Device Package
Type
Package
Drawing Pins SPQ
Reel
Diameter
(mm)
Reel
Width W1
(mm)
A0
(mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
(mm)
Pin1
Quadrant
TPS82130SILR uSiP SIL 8 3000 330.0 12.4 3.05 3.25 1.68 8.0 12.0 Q1
TPS82130SILT uSiP SIL 8 250 178.0 13.2 3.05 3.25 1.68 8.0 12.0 Q1
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TAPE AND REEL BOX DIMENSIONS
Width (mm)
W
L
H
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS82130SILR uSiP SIL 8 3000 383.0 353.0 58.0
TPS82130SILT uSiP SIL 8 250 223.0 194.0 35.0
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I TEXAS INSTRUMENTS Samples Samples
PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TPS82130SILR ACTIVE uSiP SIL 8 3000 RoHS & Green NIAU Level-2-260C-1 YEAR -40 to 125 H6
TPS82130SILT ACTIVE uSiP SIL 8 250 RoHS & Green NIAU Level-2-260C-1 YEAR -40 to 125 H6
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 13-Oct-2021
Addendum-Page 2
l TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS ’ I+K0 '«PI» Reel Diame|er AD Dimension deSIgned Io accommodate me componem wIdIh E0 Dimension deSIgned Io eecommodaIe me componenI Iengm KO Dlmenslun desIgned to accommodate me componem Ihlckness 7 w OvereII wmm OHhe earner cape i p1 Pitch between successwe cavIIy cemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O SprockeIHoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPS82130SILR uSiP SIL 8 3000 330.0 12.4 3.05 3.25 1.68 8.0 12.0 Q1
TPS82130SILT uSiP SIL 8 250 178.0 13.2 3.05 3.25 1.68 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Oct-2021
Pack Materials-Page 1
l TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS82130SILR uSiP SIL 8 3000 383.0 353.0 58.0
TPS82130SILT uSiP SIL 8 250 223.0 194.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 13-Oct-2021
Pack Materials-Page 2
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