Vishay General Semiconductor - Diodes Division 的 VS-40CTQ150(S-M3, -1-M3) 规格书

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VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 1Document Number: 95732
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High Performance Schottky Rectifier, 2 x 20 A
FEATURES
• Very low forward voltage drop
• 175 °C TJ operation
• Center tap TO-220 package
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-40CTQ... center tap Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. The proprietary barrier technology allows for
reliable operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) 2 x 20 A
VR150 V
VF at IF0.71 V
IRM 15 mA at 125 °C
TJ max. 175 °C
EAS 1 mJ
Package D2PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
D
2
PAK (TO-263AB) TO-262AA
1
3
2
1
3
2
VS-40CTQ150S-M3VS-40CTQ150-1-M3
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
Base
common
cathode
Anode Anode
Common
cathode
13
2
2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 40 A
VRRM 150 V
IFSM tp = 5 μs sine 1500 A
VF20 Apk, TJ = 125 °C (per leg) 0.71 V
TJ-55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-40CTQ150S-M3
VS-40CTQ150-1-M3 UNITS
Maximum DC reverse voltage VR150 V
Maximum working peak reverse voltage VRWM
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VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 2Document Number: 95732
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward
current, see fig. 5
per leg IF(AV) 50 % duty cycle at TC = 140 °C, rectangular waveform 20
A
per device 40
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7 IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and
with rated VRRM
applied
1500
10 ms sine or 6 ms rect.
pulse 250
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.5 A, L = 0.9 mH 1.0 mJ
Repetitive avalanche current per leg IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR
typical
1.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg
See fig. 1 VFM (1)
20 A TJ = 25 °C 0.93
V
40 A 1.16
20 A TJ = 125 °C 0.71
40 A 0.85
Maximum reverse leakage current per leg
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
50 μA
TJ = 125 °C 15 mA
Maximum junction capacitance per leg CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 450 pF
Typical series inductance per leg LSMeasured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg -55 to +175 °C
Maximum thermal resistance,
junction to case per leg RthJC
DC operation
See fig. 4 1.5
°C/WMaximum thermal resistance,
junction to case per package DC operation 0.75
Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.5
Approximate weight 2g
0.07 oz.
Mounting torque minimum Non-lubricated threads 6 (5) kgf cm
(lbf in)
maximum 12 (10)
Marking device Case style D2PAK (TO-263AB) 40CTQ150S
Case style TO-262AA 40CTQ150-1
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VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 3Document Number: 95732
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
100
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.4 0.8 1.2 1.60
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.001
1
10
100
0.1
0.01
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
4020 60 80 160
100 120 140
0
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
40 80 160
120
0
TJ = 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 4Document Number: 95732
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % VR applied
100
120
140
160
180
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
1051520
3025
0
DC
Square wave (D = 0.50)
80 % VR applied
See note (1)
0
5
10
15
20
25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
1051520
3025
0
RMS limit
DC
DC = 0.20
DC = 0.25
DC = 0.33
DC = 0.50
DC = 0.75
100
10 000
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
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VS-40CTQ150S-M3, VS-40CTQ150-1-M3
www.vishay.com Vishay Semiconductors
Revision: 27-Oct-17 5Document Number: 95732
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-40CTQ150S-M3 50 1000 Antistatic plastic tubes
VS-40CTQ150STRL-M3 800 800 13" diameter reel
VS-40CTQ150STRR-M3 800 800 13" diameter reel
VS-40CTQ150-1-M3 50 1000 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions D2PAK (TO-263AB) www.vishay.com/doc?96164
TO-262AA www.vishay.com/doc?96165
Part marking information D2PAK (TO-263AB) www.vishay.com/doc?95444
TO-262AA www.vishay.com/doc?95443
Packaging information www.vishay.com/doc?96424
SPICE model www.vishay.com/doc?95434
2- Current rating (40 A)
4- T = TO-220
5- Schottky “Q” series
6- Voltage rating (150 = 150 V)
7- S = D2PAK (TO-263AB)
-1 = TO-262AA
8- None = tube (50 pieces)
TRL = tape and reel (left oriented - for D2PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D2PAK (TO-263AB) only)
9
1- Vishay Semiconductors product
Device code
5
1 32 4 6 7 8 9
VS- 40 C T Q 150 S TRL -M3
- Circuit configuration:
C = common cathode
3
- -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
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Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 08-Jul-15 1Document Number: 95046
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D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
VI SHAW V Secuon 5 - E and c - C DuadesAmencas®vusna .com DwodesAslafllvwsha .com DwodesEuro e@wsha .com
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TO-262
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190
A1 2.03 3.02 0.080 0.119
b 0.51 0.99 0.020 0.039
b1 0.51 0.89 0.020 0.035 4
b2 1.14 1.78 0.045 0.070
b3 1.14 1.73 0.045 0.068 4
c 0.38 0.74 0.015 0.029
c1 0.38 0.58 0.015 0.023 4
c2 1.14 1.65 0.045 0.065
D 8.51 9.65 0.335 0.380 2
D1 6.86 8.00 0.270 0.315 3
E 9.65 10.67 0.380 0.420 2, 3
E1 7.90 8.80 0.311 0.346 3
e 2.54 BSC 0.100 BSC
L 13.46 14.10 0.530 0.555
L1 - 1.65 - 0.065 3
L2 3.56 3.71 0.140 0.146
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