Advanced Linear Devices Inc. 的 ALD810019, ALD910019 规格书

IN low is l pA. For a warnv increase in le, to 2.nov, lou‘r increases by about tenlold. For an additional increase in er to 2,12v lor the ALD910019 (2,14v lor the ALDalan), lou'r increases one hurlr dredlold, to [DUltA Conversely lor a wow decrease in vw to nanv, loUT decreases to one tenth ol its prevlous value, to 0.1 pA, Another mornv decrease in input voltage would reduce low to ileum. Hence when an ALD810019/ALD910019 SAB MOSFET is connected across a sdpercapacttor that charges to less than 1.7nv, it would dlsslpate essentially no power. (Continued on next page) ©2014Advanced Linear DeViCES, Inc” Vers. 2 0 www.3ldlnc.com IC' I: DNI I: Gm I: 5m |: DU Dml: Gm |: Sm |: Hi: J; J; C 41:: 41:: ”fir ”’3 UUUUUU ‘lC pm
©2014 Advanced Linear Devices, Inc., Vers. 2.0 www.aldinc.com 1 of 6
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LINEAR
DEVICES, INC.
GENERAL DESCRIPTION
The ALD810019/ALD910019 are members of the ALD8100xx
(quad) and ALD9100xx (dual) family of Supercapacitor Auto Bal-
ancing MOSFETs, or SAB™ MOSFETs. SAB MOSFETs are built
with production proven EPAD® technology and are designed to ad-
dress voltage and leakage-current balancing of supercapacitors
connected in series. Supercapacitors, also known as ultracapacitors
or supercaps, connected in series can be leakage-current balanced
by using a combination of one or more devices connected across
each supercapacitor stack to prevent over-voltages.
The ALD810019 offers a set of unique, precise operating voltage
and current characteristics for each of four SAB MOSFET devices,
as shown in its Operating Electrical Characteristics table. It can be
used to balance up to four supercapacitors connected in series.
The ALD910019 has its own set of unique precision Operating Elec-
trical Characteristics for each of its two SAB MOSFET devices,
suitable for up to two series-connected supercapacitors.
Each SAB MOSFET features a precision gate threshold voltage in
the Vt mode, which is 1.90V when the gate-drain source terminals
(VGS = VDS) are connected together at a drain-source current of
IDS(ON) = 1µA. In this mode, input voltage VIN = VGS = VDS. Dif-
ferent VIN produces an Output Current IOUT = IDS(ON) character-
istic and results in an effective variable resistor that varies in value
exponentially with VIN. This VIN, when connected across each
supercapacitor in a series, balances each supercapacitor to within
its voltage and current limits.
When VIN = 1.90V is applied to an ALD810019/ALD910019, its
IOUT is 1µA. For a 100mV increase in VIN, to 2.00V, IOUT increases
by about tenfold. For an additional increase in VIN to 2.12V for the
ALD910019 (2.14V for the ALD810019), IOUT increases one hun-
dredfold, to 100µA. Conversely, for a 100mV decrease in VIN to
1.80V, IOUT decreases to one tenth of its previous value, to 0.1µA.
Another 100mV decrease in input voltage would reduce IOUT to
0.01µA. Hence, when an ALD810019/ALD910019 SAB MOSFET
is connected across a supercapacitor that charges to less than
1.70V, it would dissipate essentially no power.
(Continued on next page)
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY
ALD810019/ALD910019
FEATURES & BENEFITS
• Simple and economical to use
• Precision factory trimmed
• Automatically regulates and balances leakage currents
• Effective for supercapacitor charge-balancing
• Balances up to 4 supercaps with a single IC package
• Balances 2-cell, 3-cell, 4-cell series-connected supercaps
• Scalable to larger supercap stacks and arrays
• Near zero additional leakage currents
• Zero leakage at 0.3V below rated voltages
• Balances series and/or parallel-connected supercaps
• Leakage currents are exponential function of cell voltages
• Active current ranges from <0.3nA to >1000µA
• Always active, always fast response time
• Minimizes leakage currents and power dissipation
*IC pins are internally connected, connect to V-
PIN CONFIGURATIONS
SAL PACKAGE
ALD910019
V-
G
N1
D
N1
S
N1
1
2
3
4
I
C
*
G
N2
D
N2
S
N2,
V-
V+
6
7
8
5
SCL PACKAGE
ALD810019
D
N1
G
N1
IC*
D
N4
S
N4
G
N4
S
N1
V-
1
2
3
4
5
6
7
89
10
11
12
13
14
15
16
D
N2
G
N2
IC*
D
N3
S
N3
G
N3
S
N2
V+
V-
V-
M2
M1
M4 M3
V-
V-
APPLICATIONS
• Series-connected supercapacitor cell leakage balancing
• Energy harvesting
• Long term backup battery with supercapacitor outputs
• Zero-power voltage divider at selected voltages
• Matched current mirrors and current sources
• Zero-power mode maximum voltage limiter
• Scaled supercapacitor stacks and arrays
PRODUCT FAMILY SPECIFICATIONS
For more information on supercapacitor balancing, how SAB
MOSFETs achieve automatic supercapacitor balancing, the device
characteristics of the SAB MOSFET family, product family product
selection guide, applications, configurations, and package infor-
mation, please download from www.aldinc.com the document:
“ALD8100xx/ALD9100xx Family of Supercapacitor Auto Balanc-
ing (SAB™) MOSFET ARRAYs”
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range
Package 0°C to +70°C -40°C to +85°C
(Commercial) (Industrial)
16-Pin SOIC ALD810019SCL ALD810019SCLI
8-Pin SOIC ALD910019SAL ALD910019SALI
_________ _________ _________ _________
ALD810019/ALD910019 Advanced Linear Devices, Inc. 2 of 6
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A TWO-SUPERCAP STACK
1-8 DENOTES PACKAGE PIN NUMBERS
C1-C2 DENOTES SUPERCAPACITORS
M1
M2
2
3, 8
4
1, 5
6
7
ALD9100XX
C1
C2
+
+
V+ ≤ +15.0V
V1
IDS(ON) ≤ 80mA
SCHEMATIC DIAGRAM OF A TYPICAL
CONNECTION FOR A FOUR-SUPERCAP STACK
1-16 DENOTES PACKAGE PIN NUMBERS
C1-C4 DENOTES SUPERCAPACITORS
V+ ≤ +15.0V
1, 5, 8, 16
2, 12
3
4
6
7
9
10
11
13
14
15
ALD8100XX
C4
+
+
C3
+
C2
+
C1
M1
M2
M3
M4
V1
V2
V3
IDS(ON) ≤ 80mA
GENERAL DESCRIPTION (CONT.)
The voltage dependent characteristic of the ALD810019/
ALD910019 on-resistance is effective in controlling excessive volt-
age rise across a supercapacitor when connected across it. In se-
ries-connected supercapacitor stacks, when one supercapacitor
voltage rises, the voltage of the other supercapacitors drops, with
the ones that have the highest leakage currents having the lowest
supercapacitor voltages. The SAB MOSFETs connected across
these supercapacitors would exhibit complementary opposing cur-
rent levels, resulting in little additional leakage currents other than
those caused by the supercapacitors themselves.
For technical assistance, please contact ALD technical support at
techsupport@aldinc.com.
APPLYING THE ALD810019/ALD910019:
1) Select a maximum supercapacitor leakage current limit for any
supercapacitor used in the stack. This is the same as output cur-
rent, IOUT = IDS(ON), of the ALD810019/ALD910019. Test that each
supercapacitor leakage current meets this maximum current limit
before use in the stack.
2) Determine whether the input voltage VIN (VGS = VDS) at that
IOUT is acceptable for the intended application. This voltage is the
same voltage as the maximum desired operating voltage of the
supercapacitor. For example, with the ALD810019, IOUT = 1000µA
corresponds to VIN = 2.42V.
3) Determine that the operating voltage margin, due to various
tolerances and/or temperature effects, is adequate for the intended
operating environment of the supercapacitor.
ALD81 0019
ALD810019/ALD910019 Advanced Linear Devices, Inc. 3 of 6
ALD810019
Parameter Symbol Min Typ Max Unit Test Conditions
Gate Threshold Voltage Vt1.88 1.90 1.92 V VGS = VDS; IDS(ON) = 1µA
Offset Voltage VOS 520mVV
t1 - Vt2 or Vt3 - Vt4
Offset Voltage Tempco TCVOS 5µV/C Vt1 - Vt2 or Vt3 - Vt4
Gate Threshold Voltage Tempco TCVt -2.2 mV/C VGS = VDS; IDS(ON) = 1µA
Output Current IOUT 0.0001 µAV
IN = 1.50V
Drain Source On Resistance RDS(ON) 15000 MΩ
Output Current IOUT 0.001 µAV
IN = 1.60V
Drain Source On Resistance RDS(ON) 1600 MΩ
Output Current IOUT 0.01 µAV
IN = 1.70V
Drain Source On Resistance RDS(ON) 170 MΩ
Output Current IOUT 0.1 µAV
IN = 1.80V
Drain Source On Resistance RDS(ON) 18 MΩ
Output Current IOUT 1µAV
IN = 1.90V
Drain Source On Resistance RDS(ON) 1.9 MΩ
Output Current IOUT 10 µAV
IN = 2.00V
Drain Source On Resistance RDS(ON) 0.20 MΩ
Output Current IOUT 100 µAV
IN = 2.14V
Drain Source On Resistance RDS(ON) 0.021 MΩ
Output Current IOUT 300 µAV
IN = 2.24V
Drain Source On Resistance RDS(ON) 0.007 MΩ
Output Current IOUT 1000 µAV
IN = 2.42V
Drain Source On Resistance RDS(ON) 0.002 MΩ
Output Current IOUT 3000 µAV
IN = 2.72V
Drain Source On Resistance RDS(ON) 0.001 MΩ
Output Current IOUT 10000 µAV
IN = 3.32V
Drain Source On Resistance RDS(ON) 0.0003 MΩ
Drain Source Breakdown Voltage BVDSX 10.6 V
Drain Source Leakage Current1IDS(OFF) 10 400 pA VIN = VGS = VDS = Vt - 1.0
VIN = VGS = VDS = Vt - 1.0,
4nAT
A = +125°C
Gate Leakage Current1IGSS 5 200 pA VGS = 5.0V, VDS = 0V
VGS = 5.0V, VDS = 0V,
1nAT
A = +125°C
Input Capacitance CISS 15 pF VGS = 0V, VDS = 5.0V
Turn-on Delay Time ton 10 ns
Turn-off Delay Time toff 10 ns
Crosstalk 60 dB f = 100KHz
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V, V- = GND, TA = 25°C, VIN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage 15.0V
Drain-Source voltage, VDS 10.6V
Gate-Source voltage, VGS 10.6V
Operating Current 80mA
Power dissipation 500mW
Operating temperature range SCL 0°C to +70°C
Operating temperature range SCLI -40°C to +85°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
ALDQIOD19
ALD810019/ALD910019 Advanced Linear Devices, Inc. 4 of 6
ALD910019
Parameter Symbol Min Typ Max Unit Test Conditions
Gate Threshold Voltage Vt1.88 1.90 1.92 V VGS = VDS; IDS(ON) = 1µA
Offset Voltage VOS 520mVV
t1 - Vt2
Offset Voltage Tempco TCVOS 5µV/C Vt1 - Vt2
Gate Threshold Voltage Tempco TCVt -2.2 mV/C VGS = VDS; IDS(ON) = 1µA
Output Current IOUT 0.0001 µAV
IN = 1.50V
Drain Source On Resistance RDS(ON) 15000 MΩ
Output Current IOUT 0.001 µAV
IN = 1.60V
Drain Source On Resistance RDS(ON) 1600 MΩ
Output Current IOUT 0.01 µAV
IN = 1.70V
Drain Source On Resistance RDS(ON) 170 MΩ
Output Current IOUT 0.1 µAV
IN = 1.80V
Drain Source On Resistance RDS(ON) 18 MΩ
Output Current IOUT 1µAV
IN = 1.90V
Drain Source On Resistance RDS(ON) 1.9 MΩ
Output Current IOUT 10 µAV
IN = 2.00V
Drain Source On Resistance RDS(ON) 0.20 MΩ
Output Current IOUT 100 µAV
IN = 2.12V
Drain Source On Resistance RDS(ON) 0.021 MΩ
Output Current IOUT 300 µAV
IN = 2.20V
Drain Source On Resistance RDS(ON) 0.007 MΩ
Output Current IOUT 1000 µAV
IN = 2.34V
Drain Source On Resistance RDS(ON) 0.002 MΩ
Output Current IOUT 3000 µAV
IN = 2.40V
Drain Source On Resistance RDS(ON) 0.001 MΩ
Output Current IOUT 10000 µAV
IN = 2.90V
Drain Source On Resistance RDS(ON) 0.0003 MΩ
Drain Source Breakdown Voltage BVDSX 10.6 V
Drain Source Leakage Current1IDS(OFF) 10 400 pA VIN = VGS = VDS = Vt - 1.0
VIN = VGS = VDS = Vt - 1.0,
4nAT
A = +125°C
Gate Leakage Current1IGSS 5 200 pA VGS = 5.0V, VDS = 0V
VGS = 5.0V, VDS = 0V,
1nAT
A = +125°C
Input Capacitance CISS 30 pF VGS = 0V, VDS = 5.0V
Turn-on Delay Time ton 10 ns
Turn-off Delay Time toff 10 ns
Crosstalk 60 dB f = 100KHz
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V, V- = GND, TA = 25°C, VIN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
V+ to V- voltage 15.0V
Drain-Source voltage, VDS 10.6V
Gate-Source voltage, VGS 10.6V
Operating Current 80mA
Power dissipation 500mW
Operating temperature range SAL 0°C to +70°C
Operating temperature range SALI -40°C to +85°C
Storage temperature range -65°C to +150°C
Lead temperature, 10 seconds +260°C
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
*EIEIEIEI
ALD810019/ALD910019 Advanced Linear Devices, Inc. 5 of 6
16 Pin Plastic SOIC Package
E
D
e
A
A
1
b
S (45°)
L
C
H
S (45°)
ø
SOIC-16 PACKAGE DRAWING
Millimeters Inches
Min Max Min MaxDim
A
A1
b
C
D-16
E
e
H
L
S
1.75
0.25
0.45
0.25
10.00
4.05
6.30
0.937
8°
0.50
0.053
0.004
0.014
0.007
0.385
0.140
0.224
0.024
0°
0.010
0.069
0.010
0.018
0.010
0.394
0.160
0.248
0.037
8°
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.35
0.18
9.80
3.50
5.70
0.60
0°
0.25
ø
ALD810019/ALD910019 Advanced Linear Devices, Inc. 6 of 6
8 Pin Plastic SOIC Package
SOIC-8 PACKAGE DRAWING
L
C
H
S (45°)
ø
e
A
A1
b
D
S (45°)
E
Millimeters Inches
Min Max Min MaxDim
A
A
1
b
C
D-8
E
e
H
L
S
1.75
0.25
0.45
0.25
5.00
4.05
6.30
0.937
8°
0.50
0.053
0.004
0.014
0.007
0.185
0.140
0.224
0.024
0°
0.010
0.069
0.010
0.018
0.010
0.196
0.160
0.248
0.037
8°
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.35
0.18
4.69
3.50
5.70
0.60
0°
0.25
ø