Vishay General Semiconductor - Diodes Division 的 VS-ST330C Series 规格书

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VS-ST330C Series
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Phase Control Thyristors
(Hockey PUK Version), 720 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case E-PUK (TO-200AB)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 720 A
VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V, 1600 V
VTM 1.96 V
IGT 100 mA
TJ-40 °C to +125 °C
Package E-PUK (TO-200AB)
Circuit configuration Single SCR
E-PUK (TO-200AB)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
720 A
Ths 55 °C
IT(RMS)
1420 A
Ths 25 °C
ITSM
50 Hz 9000 A
60 Hz 9420
I2t50 Hz 405 kA2s
60 Hz 370
VDRM/VRRM 400 to 1600 V
tqTypical 100 μs
TJ-40 to 125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ
MAXIMUM mA
VS-ST330C..C
04 400 500
50
08 800 900
12 1200 1300
14 1400 1500
16 1600 1700
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Revision: 27-Sep-17 2Document Number: 94407
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV)
180° conduction, half sine wave
double side (single side) cooled
720 (350) A
55 (75) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1420
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9000
t = 8.3 ms 9420
t = 10 ms 100 % VRRM
reapplied
7570
t = 8.3 ms 7920
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
405
kA2s
t = 8.3 ms 370
t = 10 ms 100 % VRRM
reapplied
287
t = 8.3 ms 262
Maximum I2t for fusing I2tt = 0.1 to 10 ms, no voltage reapplied 4050 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.91 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.92
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.58 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.57
Maximum on-state voltage VTM Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V
Maximum holding current IHTJ = 25 °C, anode supply 12 V resistive load 600 mA
Typical latching current IL1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM 1000 A/µs
Typical delay time tdGate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
µs
Typical turn-off time tqITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
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Revision: 27-Sep-17 3Document Number: 94407
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10.0 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = -40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200 -
mATJ = 25 °C 100 200
TJ = 125 °C 50 -
DC gate voltage required to trigger VGT
TJ = -40 °C 2.5 -
V
TJ = 25 °C 1.8 3.0
TJ = 125 °C 1.1 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ-40 to 125 °C
Maximum storage temperature range TStg -40 to 150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.09
K/W
DC operation double side cooled 0.04
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.02
DC operation double side cooled 0.01
Mounting force, ± 10 % 9800
(1000)
N
(kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet E-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.012 0.011 0.008 0.007
TJ = TJ maximum K/W
120° 0.014 0.012 0.014 0.013
90° 0.017 0.015 0.019 0.017
60° 0.025 0.022 0.026 0.023
30° 0.043 0.036 0.043 0.037
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Revision: 27-Sep-17 4Document Number: 94407
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400
30° 60° 90°
120°
180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST3 3 0 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
DC
30°
60°
90°120° 180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST3 3 0 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.09 K/ W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000
30° 60° 90° 120° 180°
Average On-state Current (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST3 3 0 C . . C Se r i e s
(Double Side Cooled)
R (DC) = 0.04 K/ W
thJ-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400 1600
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Conduction Period
Maximum Allowable Heatsink Temperature (°C
)
ST330C..C Series
(Double Side Cooled)
R (DC) = 0.04 K/ W
thJ-hs
0
200
400
600
800
1000
1200
1400
0 100 200 300 400 500 600 700 800
180°
120°
90°
60°
30° RM S Li m i t
Conduction Angle
Ma xim um Ave ra g e On -sta t e Pow e r Lo ss (W)
Average On-state Current (A)
ST3 3 0 C . . C Se r i e s
T = 125°C
J
0
200
400
600
800
1000
1200
1400
1600
1800
0 200 400 600 800 1000 1200
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST330C..C Series
T = 125°C
J
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Revision: 27-Sep-17 5Document Number: 94407
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
110100
Number Of Equa l Amp litude Half Cycle Current Pulses (N)
Pea k Ha lf S
ine Wave On-state Current (A)
Init ia l T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST3 3 0 C . . C Se r i e s
At Any Rated Load Cond ition And With
Rated V Applied Following Surge.
RRM
3500
4000
4500
5000
5500
6000
6500
7000
7500
8000
8500
9000
0.01 0.1 1
Pulse Tra in Du ra t io n (s)
Versus Pulse Train Duration. Control
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST3 3 0 C . . C Se r i e s
Maximum Non Repetitive Surge Current
Of Conduc tion May Not Be Maintained.
100
1000
10000
01234567
T = 2 5° C
J
In st a n t a n eo u s O n -st a t e C urr e n t ( A)
Instantaneous On-state Voltage (V)
T = 1 2 5 ° C
J
ST330C..C Series
0.001
0.01
0.1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s )
thJ-hs
St e a d y St a t e V a l u e
R = 0.09 K/ W
(Single Side Cooled)
R = 0.04 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST3 3 0 C . . C Se r i e s
Transient Thermal Impedance Z (K/ W)
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Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95075
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 12 5 ° C
Tj = - 4 0 ° C
(2) (3)
Instantaneous Gate Current (A)
In st a n t a n e o us G a t e V o l t a g e ( V )
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms ; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4 ms
(2) PGM = 20W, tp = 2 ms
(3) PGM = 40W, tp = 1 ms
(4) PGM = 60W, tp = 0.66 ms
Rectangular gate pulse
D e v i c e : ST3 3 0 C . . C Se r i e s
(4)
Device code
51 32 4 6 7 8 9
VS- ST 33 0 C 16 C 1 -
- Thyristor
2
-Essential part number
3
- 0 = converter grade
4
- C = ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- C = PUK case E-PUK (TO-200AB)
7
- 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = eyelet terminals (gate and auxiliary cathode soldered leads)
9
8
- Critical dV/dt: None = 500 V/μs (standard selection)
L = 1000 V/μs (special selection)
3 = fast-on terminals (gate and auxiliary cathode soldered leads)
1
-Vishay Semiconductors product
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Outline Dimensions
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E-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
— VISHAY. V
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Revision: 08-Feb-17 1Document Number: 91000
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