Texas Instruments 的 DRV5033 规格书

V'.‘ I TEXAS INSTRUMENTS SOT-23 T0792
B (mT)
OUT
BOP(S)BRP (N) BOF
Bhys
BRP(S)BOP (N)
Bhys
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV5033
SLIS152G –MAY 2014–REVISED SEPTEMBER 2016
DRV5033 Digital-Omnipolar-Switch Hall Effect Sensor
1
1 Features
1• Digital Omnipolar-Switch Hall Sensor
• Superior Temperature Stability
– BOP ±10% Over Temperature
• Multiple Sensitivity Options (BOP / BRP):
– ±3.5 / ±2 mT (FA, see Device Nomenclature)
– ±6.9 / ±3.5 mT (AJ, see Device Nomenclature)
• Detects North and South Magnetic Field
• Supports a Wide Voltage Range
– 2.5 to 38 V
– No External Regulator Required
• Wide Operating Temperature Range
– TA= –40 to 125°C (Q, see Device
Nomenclature)
• Open Drain Output (30-mA Sink)
• Fast 35-µs Power-On Time
• Small Package and Footprint
– Surface Mount 3-Pin SOT-23 (DBZ)
– 2.92 mm × 2.37 mm
– Through-Hole 3-Pin TO-92 (LPG)
– 4.00 mm × 3.15 mm
•Protection Features
– Reverse Supply Protection (up to –22 V)
– Supports up to 40-V Load Dump
– Output Short-Circuit Protection
– Output Current Limitation
2 Applications
• Docking Detection
• Door Open and Close Detection
• Proximity Sensing
• Valve Positioning
• Pulse Counting
3 Description
The DRV5033 device is a chopper-stabilized Hall
Effect Sensor that offers a magnetic sensing solution
with superior sensitivity stability over temperature and
integrated protection features.
The DRV5033 responds the same to both polarities
of magnetic field direction. When the applied
magnetic flux density exceeds the BOP threshold, the
DRV5033 open-drain output goes low. The output
stays low until the field decreases to less than BRP,
and then the output goes to high impedance. The
output current sink capability is 30 mA. A wide
operating voltage range from 2.5 to 38 V with reverse
polarity protection up to –22 V makes the device
suitable for a wide range of industrial applications.
Internal protection functions are provided for reverse
supply conditions, load dump, and output short circuit
or over current.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
DRV5033 SOT-23 (3) 2.92 mm × 1.30 mm
TO-92 (3) 4.00 mm × 3.15 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Output State Device Packages
l TEXAS INSTRUMENTS
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 4
6 Specifications......................................................... 5
6.1 Absolute Maximum Ratings ...................................... 5
6.2 ESD Ratings.............................................................. 5
6.3 Recommended Operating Conditions....................... 5
6.4 Thermal Information.................................................. 5
6.5 Electrical Characteristics........................................... 6
6.6 Switching Characteristics.......................................... 6
6.7 Magnetic Characteristics........................................... 6
6.8 Typical Characteristics.............................................. 7
7 Detailed Description.............................................. 9
7.1 Overview ................................................................... 9
7.2 Functional Block Diagram......................................... 9
7.3 Feature Description................................................. 10
7.4 Device Functional Modes........................................ 15
8 Application and Implementation ........................ 16
8.1 Application Information............................................ 16
8.2 Typical Applications ................................................ 16
9 Power Supply Recommendations...................... 18
10 Layout................................................................... 19
10.1 Layout Guidelines ................................................. 19
10.2 Layout Example .................................................... 19
11 Device and Documentation Support ................. 20
11.1 Device Support...................................................... 20
11.2 Receiving Notification of Documentation Updates 21
11.3 Community Resources.......................................... 21
11.4 Trademarks........................................................... 21
11.5 Electrostatic Discharge Caution............................ 21
11.6 Glossary................................................................ 21
12 Mechanical, Packaging, and Orderable
Information ........................................................... 21
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (May 2016) to Revision G Page
• Changed the power-on time for the FA version in the Electrical Characteristics table.......................................................... 6
• Added the Layout section .................................................................................................................................................... 19
• Added the Receiving Notification of Documentation Updates section ................................................................................ 21
Changes from Revision E (February 2016) to Revision F Page
• Revised preliminary limits for the FA version ......................................................................................................................... 6
Changes from Revision D (December 2015) to Revision E Page
• Added the FA device option ................................................................................................................................................... 1
• Added the typical bandwidth value to the Magnetic Characteristics table ............................................................................. 6
Changes from Revision C (May 2015) to Revision D Page
• Corrected body size of SOT-23 package and SIP package name to TO-92 ........................................................................ 1
• Added BMAX to Absolute Maximum Ratings ........................................................................................................................... 5
• Removed table note from junction temperature .................................................................................................................... 5
• Updated package tape and reel options for M and blank ................................................................................................... 20
• Added Community Resources ............................................................................................................................................. 21
Changes from Revision B (September 2014) to Revision C Page
• Updated device status to production data ............................................................................................................................. 1
l TEXAS INSTRUMENTS
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Changes from Revision A (August 2014) to Revision B Page
• Changed the maximum TJvalue to 150°C ............................................................................................................................ 5
• Added typical rise and fall time and removed maximum value in Switching Characteristics ................................................ 6
• Updated the Magnetic Characteristics values ....................................................................................................................... 6
• Updated all Typical Characteristics graphs ........................................................................................................................... 7
• Updated Equation 4 ............................................................................................................................................................. 17
Changes from Original (May 2014) to Revision A Page
• Changed High Sensitivity Options: +6.9 / +2.3 mT (AJ) to +6.9 / +3.5 mT (AJ).................................................................... 1
• Changed the maximum TJvalue from 175°C to 150°C.......................................................................................................... 5
• Changed MIN value for IOCP from 20 to 15 ............................................................................................................................ 6
• Changed Max value for IOCP from 40 to 45 ............................................................................................................................ 6
• Updated Magnetic Characteristics table. ............................................................................................................................... 6
l TEXAS INSTRUMENTS
1 2 3
VCC
GND
OUT
3
2
GND
OUT
1VCC
4
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5 Pin Configuration and Functions
For additional configuration information, see Device Markings and Mechanical, Packaging, and Orderable
Information.
DBZ Package
3-Pin SOT-23
Top View
LPG Package
3-Pin TO-92
Top View
Pin Functions
PIN TYPE DESCRIPTION
NAME DBZ LPG
GND 3 2 GND Ground pin
OUT 2 3 Output Hall sensor open-drain output. The open drain requires a resistor pullup.
VCC 1 1 PWR 2.5 to 38 V power supply. Bypass this pin to the GND pin with a 0.01-µF (minimum)
ceramic capacitor rated for VCC.
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Ensured by design. Only tested to –20 V.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Power supply voltage
VCC –22(2) 40 V
Voltage ramp rate (VCC), VCC < 5 V Unlimited V/µs
Voltage ramp rate (VCC), VCC > 5 V 0 2
Output pin voltage –0.5 40 V
Output pin reverse current during reverse supply condition 0 100 mA
Magnetic flux density, BMAX Unlimited
Operating junction temperature, TJ–40 150 °C
Storage temperature, Tstg –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) Power dissipation and thermal limits must be observed
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Power supply voltage 2.5 38 V
VOOutput pin voltage (OUT) 0 38 V
ISINK Output pin current sink (OUT)(1) 0 30 mA
TAOperating ambient temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
DRV5033
UNITDBZ (SOT-23) LPG (TO-92)
3 PINS 3 PINS
RθJA Junction-to-ambient thermal resistance 333.2 180 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 99.9 98.6 °C/W
RθJB Junction-to-board thermal resistance 66.9 154.9 °C/W
ψJT Junction-to-top characterization parameter 4.9 40 °C/W
ψJB Junction-to-board characterization parameter 65.2 154.9 °C/W
l TEXAS INSTRUMENTS
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6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES (VCC)
VCC VCC operating voltage 2.5 38 V
ICC Operating supply current VCC = 2.5 to 38 V, TA= 25°C 2.7 mA
VCC = 2.5 to 38 V, TA= 125°C 3 3.6
ton Power-on time AJ version 35 50 µs
FA version 35 70
OPEN DRAIN OUTPUT (OUT)
rDS(on) FET on-resistance VCC = 3.3 V, IO= 10 mA, TA= 25°C 22 Ω
VCC = 3.3 V, IO= 10 mA, TA= 125°C 36 50
Ilkg(off) Off-state leakage current Output Hi-Z 1 µA
PROTECTION CIRCUITS
VCCR Reverse supply voltage –22 V
IOCP Overcurrent protection level OUT shorted VCC 15 30 45 mA
6.6 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OPEN DRAIN OUTPUT (OUT)
tdOutput delay time B = BRP – 10 mT to BOP + 10 mT in 1 µs 13 25 µs
trOutput rise time (10% to 90%) R1 = 1 kΩ, CO= 50 pF, VCC = 3.3 V 200 ns
tfOutput fall time (90% to 10%) R1 = 1 kΩ, CO= 50 pF, VCC = 3.3 V 31 ns
(1) 1 mT = 10 Gauss
(2) Bandwidth describes the fastest changing magnetic field that can be detected and translated to the output.
(3) |BOP| is always greater than |BRP|.
6.7 Magnetic Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT(1)
ƒBW Bandwidth(2) 20 30 kHz
DRV5033FA: ±3.5 / ±2 mT
BOP Operate point; see Figure 12
TA= –40°C to 125°C
±1.8 ±3.5 ±6.8 mT
BRP Release point; see Figure 12 ±0.5 ±2 ±4.2 mT
Bhys Hysteresis; Bhys = (BOP – BRP)(3) ±1.5 mT
BOMagnetic offset; BO= (BOP + BRP) / 2 ±2.8 mT
DRV5033AJ: ±6.9 / ±3.5 mT
BOP Operate point; see Figure 12
TA= –40°C to 125°C
±3 ±6.9 ±12 mT
BRP Release point; see Figure 12 ±1 ±3.5 ±5 mT
Bhys Hysteresis; Bhys = (BOP – BRP)(3) 3.4 mT
BOMagnetic offset; BO= (BOP + BRP) / 2 5.2 mT
l TEXAS INSTRUMENTS 35 35 \ \\
Supply Voltage (V)
Magnetic Field Release Point BRP (m T)
0 10 20 30 40
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
D003
Ambient Temperature (°C)
Magnetic Field Release Point BRP (m T)
-50 -25 0 25 50 75 100 125
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
D004
Ambient Temperature (°C)
Magnetic Field Operate Point BOP (m T)
-50 -25 0 25 50 75 100 125
5
5.5
6
6.5
7
7.5
8
8.5
9
D002
Supply Voltage (V)
Supply Current (mA)
0 10 20 30 40
2
2.5
3
3.5
D009
TA ±ƒ&
TA = 25°C
TA = 75°C
TA = 125°C
Ambient Temperature (°C)
Supply Current (mA)
-50 -25 0 25 50 75 100 125
2
2.5
3
3.5
D010
VCC = 2.5 V
VCC = 3.3 V
VCC = 13.2 V
VCC = 38 V
7
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6.8 Typical Characteristics
Figure 1. ICC vs VCC Figure 2. ICC vs Temperature
TA= 25°C
Figure 3. DRV5033AJ, BOP vs VCC
VCC = 3.3 V
Figure 4. DRV5033AJ, BOP vs Temperature
TA= 25°C
Figure 5. DRV5033AJ, BRP vs VCC
VCC = 3.3 V
Figure 6. DRV5033AJ, BRP vs Temperature
l TEXAS INSTRUMENTS
Supply Voltage (V)
Offset (mT)
0 10 20 30 40
4
4.25
4.5
4.75
5
5.25
5.5
5.75
6
D005
Ambient Temperature (°C)
Offset (mT)
-50 -25 0 25 50 75 100 125
4
4.25
4.5
4.75
5
5.25
5.5
5.75
6
D006
Supply Voltage (V)
Hysteresis (m T)
0 10 20 30 40
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
D007
Ambient Temperature (°C)
Hysteresis (m T)
-50 -25 0 25 50 75 100 125
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
D008
8
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Typical Characteristics (continued)
TA= 25°C
Figure 7. DRV5033AJ, Hysteresis vs VCC
VCC = 3.3 V
Figure 8. DRV5033AJ, Hysteresis vs Temperature
TA= 25°C
Figure 9. DRV5033AJ, Offset vs VCC
VCC = 3.3 V
Figure 10. DRV5033AJ, Offset vs Temperature
l TEXAS INSTRUMENTS E] E] F J J”} F> F r [3*
Temperature
Compensation
Bias
+
±
Offset Cancel
Regulated Supply
Reference
Gate
Drive
OCP
VCC
OUT
GND
2.5 to 38 V
R1
C2
(Optional)
C1
Hall Element
9
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7 Detailed Description
7.1 Overview
The DRV5033 device is a chopper-stabilized hall sensor with a digital omnipolar switch output for magnetic
sensing applications. The DRV5033 device can be powered with a supply voltage between 2.5 and 38 V, and will
survive –22 V reverse battery conditions continuously. Note that the DRV5033 device will not be operating when
about –22 to 2.4 V is applied to VCC (with respect to GND). In addition, the device can withstand voltages up to
40 V for transient durations.
The field polarity is defined as follows: a south pole near the marked side of the package is a positive magnetic
field.Anorth pole near the marked side of the package is a negative magnetic field.
The omnipolar configuration allows the hall sensor to respond to either a south or north pole. A strong magnetic
field of either polarity will cause the output to pull low (operate point, BOP), and a weaker magnetic field will cause
the output to release (release point, BRP). Hysteresis is included in between the operate and release points, so
magnetic field noise will not trip the output accidentally.
An external pullup resistor is required on the OUT pin. The OUT pin can be pulled up to VCC, or to a different
voltage supply. This allows for easier interfacing with controller circuits.
7.2 Functional Block Diagram
l TEXAS INSTRUMENTS A ‘—'< 4—,»="" ‘="" x="" '="" |="" x="" ‘="" 4’="" t="" x="" i="" \="" i="" v="" )="">
B (mT)
OUT
BOP(S)
BRP (N) BOF
Bhys
BRP(S)
BOP (N)
Bhys
DRV5033
1 2 3
S
N
B > 0 mT
S
N
B < 0 mT
S
N
B > 0 mT
S
N
B < 0 mT
(Bottom view)
SOT-23 (DBZ) TO-92 (LPG)
1 2 3
10
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7.3 Feature Description
7.3.1 Field Direction Definition
A positive magnetic field is defined as a south pole near the marked side of the package as shown in Figure 11.
N = North pole, S = South pole
Figure 11. Field Direction Definition
7.3.2 Device Output
If the device is powered on with a magnetic field strength between BRP and BOP, then the device output is
indeterminate and can either be Hi-Z or Low. If the field strength is greater than BOP, then the output is pulled
low. If the field strength is less than BRP, then the output is released.
Figure 12. DRV5033—BOP > 0
l TEXAS INSTRUMENTS A B if ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, B if ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, <—> (on A A B __ ____________________________________ B __ ____________________________________ A <—> (an
VCC
BOP
BRP
t (s)
B (mT)
t (s)
OUT
t (s)
Valid Output
ton
VCC
BOP
BRP
t (s)
B (mT)
t (s)
t (s)
OUT
Valid Output
ton
11
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Feature Description (continued)
7.3.3 Power-On Time
After applying VCC to the DRV5033 device, ton must elapse before the OUT pin is valid. During the power-up
sequence, the output is Hi-Z. A pulse as shown in Figure 13 and Figure 14 occurs at the end of ton. This pulse
can allow the host processor to determine when the DRV5033 output is valid after startup. In Case 1 (Figure 13)
and Case 2 (Figure 14), the output is defined assuming a constant magnetic field B > BOP and B < BRP.
Figure 13. Case 1: Power On When B > BOP
Figure 14. Case 2: Power On When B < BRP
l TEXAS INSTRUMENTS
VCC
BOP
BRP t (s)
B (mT)
t (s)
t (s)
OUT
Valid Output
td
ton
12
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Feature Description (continued)
If the device is powered on with the magnetic field strength BRP < B < BOP, then the device output is
indeterminate and can either be Hi-Z or pulled low. During the power-up sequence, the output is held Hi-Z until
ton has elapsed. At the end of ton, a pulse is given on the OUT pin to indicate that ton has elapsed. After ton, if the
magnetic field changes such that BOP < B, the output is released. Case 3 (Figure 15) and Case 4 (Figure 16)
show examples of this behavior.
Figure 15. Case 3: Power On When BRP < B < BOP, Followed by B > BOP
l TEXAS INSTRUMENTS to" In
ref ref
V max V min
R1
30 mA 100 µA
d d
VCC
BOP
BRP
t (s)
B (mT)
t (s)
t (s)
OUT
Valid Output
td
ton
13
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Feature Description (continued)
Figure 16. Case 4: Power On When BRP < B < BOP, Followed by B < BRP
7.3.4 Output Stage
The DRV5033 output stage uses an open-drain NMOS, and it is rated to sink up to 30 mA of current. For proper
operation, calculate the value of the pullup resistor R1 using Equation 1.
(1)
The size of R1 is a tradeoff between the OUT rise time and the current when OUT is pulled low. A lower current
is generally better, however faster transitions and bandwidth require a smaller resistor for faster switching.
In addition, ensure that the value of R1 > 500 Ωto ensure the output driver can pull the OUT pin close to GND.
NOTE
Vref is not restricted to VCC. The allowable voltage range of this pin is specified in the
Absolute Maximum Ratings.
l TEXAS INSTRUMENTS 2 R1 F? L.‘ I \ \— TIT 9.4 F‘I LJ C2
BW 1
¦ +] 2 R1 C2
u 
S u u
Gate
Drive
OCP
OUT
GND
R1
C2
Vref
ISINK
14
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Feature Description (continued)
Figure 17.
Select a value for C2 based on the system bandwidth specifications as shown in Equation 2.
(2)
Most applications do no require this C2 filtering capacitor.
l TEXAS INSTRUMENTS
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Feature Description (continued)
7.3.5 Protection Circuits
The DRV5033 device is fully protected against overcurrent and reverse-supply conditions.
7.3.5.1 Overcurrent Protection (OCP)
An analog current-limit circuit limits the current through the FET. The driver current is clamped to IOCP. During
this clamping, the rDS(on) of the output FET is increased from the nominal value.
7.3.5.2 Load Dump Protection
The DRV5033 device operates at DC VCC conditions up to 38 V nominally, and can additionally withstand VCC =
40 V. No current-limiting series resistor is required for this protection.
7.3.5.3 Reverse Supply Protection
The DRV5033 device is protected in the event that the VCC pin and the GND pin are reversed (up to –22 V).
NOTE
In a reverse supply condition, the OUT pin reverse-current must not exceed the ratings
specified in the Absolute Maximum Ratings.
Table 1.
FAULT CONDITION DEVICE DESCRIPTION RECOVERY
FET overload (OCP) ISINK ≥IOCP Operating Output current is clamped to IOCP IO< IOCP
Load dump 38 V < VCC < 40 V Operating Device will operate for a transient duration VCC ≤38 V
Reverse supply –22 V < VCC < 0 V Disabled Device will survive this condition VCC ≥2.5 V
7.4 Device Functional Modes
The DRV5033 device is active only when VCC is between 2.5 and 38 V.
When a reverse supply condition exists, the device is inactive.
l TEXAS INSTRUMENTS
2
1
3
C1
0.01 µF
(minimum)
OUT
VCC
R1
10 kŸ
C2
680 pF
(Optional)
VCC
16
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV5033 device is used in magnetic-field sensing applications.
8.2 Typical Applications
8.2.1 Standard Circuit
Figure 18. Typical Application Circuit
8.2.1.1 Design Requirements
For this design example, use the parameters listed in Table 2 as the input parameters.
Table 2. Design Parameters
DESIGN PARAMETER REFERENCE EXAMPLE VALUE
Supply voltage VCC 3.2 to 3.4 V
System bandwidth ƒBW 10 kHz
(1) REF is not a pin on the DRV5033 device, but a REF supply-voltage pullup is required for the OUT pin; the OUT pin may be pulled up to
VCC.
8.2.1.2 Detailed Design Procedure
Table 3. External Components
COMPONENT PIN 1 PIN 2 RECOMMENDED
C1 VCC GND A 0.01-µF (minimum) ceramic capacitor rated for VCC
C2 OUT GND Optional: Place a ceramic capacitor to GND
R1 OUT REF(1) Requires a resistor pullup
l TEXAS INSTRUMENTS 2 ¥ 2 R1 C2 2 ¥ 2 R1 CZ a_ ._ _ _ _ &
Frequency (Hz)
Magnitude (dB)
100 1000 10000 100000
-14
-12
-10
-8
-6
-4
-2
0
D011
OUT
OUT
1
2 10 kHz 2 R1 C2
u 
S u u
BW 1
¦ +] 2 R1 C2
u 
S u u
3.4 V 3.2 V
R1
30 mA 100 µA
d d
ref ref
V max V min
R1
30 mA 100 µA
d d
17
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8.2.1.2.1 Configuration Example
In a 3.3-V system, 3.2 V ≤Vref ≤3.4 V. Use Equation 3 to calculate the allowable range for R1.
(3)
For this design example, use Equation 4 to calculate the allowable range of R1.
(4)
Therefore:
113 Ω≤R1 ≤32 kΩ(5)
After finding the allowable range of R1 (Equation 5), select a value between 500 Ωand 32 kΩfor R1.
Assuming a system bandwidth of 10 kHz, use Equation 6 to calculate the value of C2.
(6)
For this design example, use Equation 7 to calculate the value of C2.
(7)
An R1 value of 10 kΩand a C2 value less than 820 pF satisfy the requirement for a 10-kHz system bandwidth.
A selection of R1 = 10 kΩand C2 = 680 pF would cause a low-pass filter with a corner frequency of 23.4 kHz.
8.2.1.3 Application Curves
R1 = 10 kΩpullup No C2
Figure 19. 10-kHz Switching Magnetic Field
R1 = 10-kΩpullup C2 = 680 pF
Figure 20. 10-kHz Switching Magnetic Field
R1 = 10-kΩpullup C2 = 680 pF
Figure 21. Low-Pass Filtering
l TEXAS INSTRUMENTS
OUT VCC
R1
GND 3
2 1
Controller
+
±
Current
sense
C1
18
DRV5033
SLIS152G –MAY 2014–REVISED SEPTEMBER 2016
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Product Folder Links: DRV5033
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8.2.2 Alternative Two-Wire Application
For systems that require minimal wire count, the device output can be connected to VCC through a resistor, and
the total supplied current can be sensed near the controller.
Figure 22. 2-Wire Application
Current can be sensed using a shunt resistor or other circuitry.
8.2.2.1 Design Requirements
Table 4 lists the related design parameters.
Table 4. Design Parameters
DESIGN PARAMETER REFERENCE EXAMPLE VALUE
Supply voltage VCC 12 V
OUT resistor R1 1 kΩ
Bypass capacitor C1 0.1 µF
Current when B < BRP IRELEASE About 3 mA
Current when B > BOP IOPERATE About 15 mA
8.2.2.2 Detailed Design Procedure
When the open-drain output of the device is high-impedance, current through the path equals the ICC of the
device (approximately 3 mA).
When the output pulls low, a parallel current path is added, equal to VCC / (R1 + rDS(on)). Using 12 V and 1 kΩ,
the parallel current is approximately 12 mA, making the total current approximately 15 mA.
The local bypass capacitor C1 should be at least 0.1 µF, and a larger value if there is high inductance in the
power line interconnect.
9 Power Supply Recommendations
The DRV5033 device is designed to operate from an input voltage supply (VM) range between 2.5 and 38 V. A
0.01-µF (minimum) ceramic capacitor rated for VCC must be placed as close to the DRV5033 device as possible.
l TEXAS INSTRUMENTS +
GND
OUT VCC
19
DRV5033
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10 Layout
10.1 Layout Guidelines
The bypass capacitor should be placed near the DRV5033 device for efficient power delivery with minimal
inductance. The external pullup resistor should be placed near the microcontroller input to provide the most
stable voltage at the input; alternatively, an integrated pullup resistor within the GPIO of the microcontroller can
be used.
Generally, using PCB copper planes underneath the DRV5033 device has no effect on magnetic flux, and does
not interfere with device performance. This is because copper is not a ferromagnetic material. However, If nearby
system components contain iron or nickel, they may redirect magnetic flux in unpredictable ways.
10.2 Layout Example
Figure 23. DRV5033 Layout Example
‘5‘ TEXAS INSTRUMENTS
(Bottom view)
1 2 3
Marked Side Front
Marked Side
1 2 3
1 2
3
Marked Side
(DBZ)(AJ)DRV5033
Prefix
DRV5033: Omnipolar Hall sensor
(Q) (R) ()
AEC-Q100
Q1: Automotive qualification
Blank: Non-auto
Package
DBZ: 3-pin SOT-23
LPG: 3-pin TO-92
Temperature Range
Q: ±40 to 125°C
E: ±40 to 150°C
BOP/BRP
FA: ±3.5/±2 mT
AJ: ±6.9/±3.5 mT
Tape and Reel
R: 3000 pcs/reel
T: 250 pcs/reel
M: 3000 pcs/box (ammo)
Blank: 1000 pcs/bag (bulk)
20
DRV5033
SLIS152G –MAY 2014–REVISED SEPTEMBER 2016
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Product Folder Links: DRV5033
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11 Device and Documentation Support
11.1 Device Support
11.1.1 Device Nomenclature
Figure 24 shows a legend for reading the complete device name for and DRV5033 device.
Figure 24. Device Nomenclature
11.1.2 Device Markings
Figure 25. SOT-23 (DBZ) Package Figure 26. TO-92 (LPG) Package
indicates the Hall effect sensor (not to scale). The Hall element is located in the center of the package with a
tolerance of ±100 µm. The height of the Hall element from the bottom of the package is 0.7 mm ±50 µm in the DBZ
package and 0.987 mm ±50 µm in the LPG package.
l TEXAS INSTRUMENTS
21
DRV5033
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SLIS152G –MAY 2014–REVISED SEPTEMBER 2016
Product Folder Links: DRV5033
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11.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
11.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
I TEXAS INSTRUMENTS Samples Samples Samples Samples Samples
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
DRV5033AJQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+QLAJ, 1J72)
DRV5033AJQDBZT ACTIVE SOT-23 DBZ 3 250 RoHS & Green NIPDAUAG | SN Level-1-260C-UNLIM -40 to 125 (+QLAJ, 1J72)
DRV5033AJQLPG ACTIVE TO-92 LPG 3 1000 RoHS & Green SN N / A for Pkg Type -40 to 125 +QLAJ
DRV5033AJQLPGM ACTIVE TO-92 LPG 3 3000 RoHS & Green SN N / A for Pkg Type -40 to 125 +QLAJ
DRV5033FAQDBZR ACTIVE SOT-23 DBZ 3 3000 RoHS & Green SN Level-1-260C-UNLIM -40 to 125 (+QLFA, 1J8W)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF DRV5033 :
•Automotive: DRV5033-Q1
NOTE: Qualified Version Definitions:
•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
I TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “K0 '«Pt» Reel Dlameter AD Dimension designed to accommodate the component Width ED Dimension designed to accommodate the component iengtn K0 Dimension designed to accommodate the component Ihlckness 7 W OveraH wtdlh loe Gamer tape i P1 Pitch between successive cavtty centers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE OOODOODD ,,,,,,,,,,, ‘ User Direcllon 0' Feed Sprocket Hoies Pockel Quadrants
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
DRV5033AJQDBZR SOT-23 DBZ 3 3000 180.0 8.4 3.15 2.77 1.22 4.0 8.0 Q3
DRV5033AJQDBZR SOT-23 DBZ 3 3000 178.0 9.0 3.15 2.77 1.22 4.0 8.0 Q3
DRV5033AJQDBZT SOT-23 DBZ 3 250 178.0 9.0 3.15 2.77 1.22 4.0 8.0 Q3
DRV5033AJQDBZT SOT-23 DBZ 3 250 180.0 8.4 3.15 2.77 1.22 4.0 8.0 Q3
DRV5033FAQDBZR SOT-23 DBZ 3 3000 178.0 9.0 3.15 2.77 1.22 4.0 8.0 Q3
DRV5033FAQDBZR SOT-23 DBZ 3 3000 180.0 8.4 3.15 2.77 1.22 4.0 8.0 Q3
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Apr-2020
Pack Materials-Page 1
I TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DRV5033AJQDBZR SOT-23 DBZ 3 3000 202.0 201.0 28.0
DRV5033AJQDBZR SOT-23 DBZ 3 3000 180.0 180.0 18.0
DRV5033AJQDBZT SOT-23 DBZ 3 250 180.0 180.0 18.0
DRV5033AJQDBZT SOT-23 DBZ 3 250 202.0 201.0 28.0
DRV5033FAQDBZR SOT-23 DBZ 3 3000 180.0 180.0 18.0
DRV5033FAQDBZR SOT-23 DBZ 3 3000 202.0 201.0 28.0
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Apr-2020
Pack Materials-Page 2
www.ti.com
PACKAGE OUTLINE
4.1
3.9
3X
15.5
15.1
3X 0.48
0.35 2X 1.27 0.05
3.25
3.05
3X 0.51
0.36
3X 0.55
0.40
2X (45 )
0.86
0.66
1.62
1.42
2.64
2.44
2.68
2.28
5.05
MAX
(0.5425)
3X (0.8)
4221343/C 01/2018
TO-92 - 5.05 mm max heightLPG0003A
TRANSISTOR OUTLINE
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
13
123
SCALE 1.300
www.ti.com
EXAMPLE BOARD LAYOUT
TYP
ALL AROUND
0.05 MAX FULL R
TYP
(1.07)
(1.7)
(1.27)
(2.54)
(R0.05) TYP 2X (1.07)
2X (1.7)
3X ( 0.75) VIA
4221343/C 01/2018
TO-92 - 5.05 mm max heightLPG0003A
TRANSISTOR OUTLINE
LAND PATTERN EXAMPLE
NON-SOLDER MASK DEFINED
SCALE:20X
METAL
TYP
OPENING
SOLDER MASK
13
2
2X
METAL
2X
SOLDER MASK
OPENING
www.ti.com
TAPE SPECIFICATIONS
0 1 0 1
12.9
12.5
6.55
6.15
13.0
12.4
2.5 MIN 6.5
5.5
3.8-4.2 TYP
9.5
8.5
19.0
17.5
1 MAX
21
18
0.45
0.35
0.25
0.15
TO-92 - 5.05 mm max heightLPG0003A
TRANSISTOR OUTLINE
4221343/C 01/2018
GENERIC PACKAGE VIEW D32 3 SOT-23 - 1.12 mm max heigm SMALL OUTLINE TRANSISTOR Images above are jusl a represenlalion of the package family, aclual package may vary Refel lo the product dala sheel for package details. I TEXAS INSTRI IMFNTS
4203227/C
I-III
www.ti.com
PACKAGE OUTLINE
C
TYP
0.20
0.08
0.25
2.64
2.10 1.12 MAX
TYP
0.10
0.01
3X 0.5
0.3
TYP
0.6
0.2
1.9
0.95
TYP-80
A
3.04
2.80
B
1.4
1.2
(0.95)
SOT-23 - 1.12 mm max heightDBZ0003A
SMALL OUTLINE TRANSISTOR
4214838/C 04/2017
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC registration TO-236, except minimum foot length.
0.2 C A B
1
3
2
INDEX AREA
PIN 1
GAGE PLANE
SEATING PLANE
0.1 C
SCALE 4.000
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MAX
ALL AROUND 0.07 MIN
ALL AROUND
3X (1.3)
3X (0.6)
(2.1)
2X (0.95)
(R0.05) TYP
4214838/C 04/2017
SOT-23 - 1.12 mm max heightDBZ0003A
SMALL OUTLINE TRANSISTOR
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
SCALE:15X
PKG
1
3
2
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
www.ti.com
EXAMPLE STENCIL DESIGN
(2.1)
2X(0.95)
3X (1.3)
3X (0.6)
(R0.05) TYP
SOT-23 - 1.12 mm max heightDBZ0003A
SMALL OUTLINE TRANSISTOR
4214838/C 04/2017
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 THICK STENCIL
SCALE:15X
SYMM
PKG
1
3
2
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