IXYS 的 IXA20PG1200DHGLB 规格书

© 2012 IXYS All rights reserved 1 - 5
20120131b
IXA 20PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
IC25 = 32 A
VCES = 1200 V
VCE(sat) typ = 1.8 V
XPT IGBT phaseleg
ISOPLUS™
Surface Mount Power Device
Features
• XPT IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
• Sonic™ diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• VCEsat detection diode
- integrated into package
- very fast diode
• Package
- isolated back surface
- low coupling capacity between pins
and heatsink
- PCB space saving
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
Applications
• Phaseleg
- buck-boost chopper
• Full bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• Three phase bridge
- AC drives
- controlled rectifier
IGBTs S1, S2
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 1200 V
VGES ±20 V
IC25
IC80
TC = 25°C
TC = 80°C
32
23
A
A
ICM
VCEK
VGE = 15 V; RG = 56 W; TVJ = 125°C
RBSOA, clamped inductive load; L = 100 µH
45
VCES
A
tSC
(SCSOA)
VCE = 900 V; VGE = ±15 V; RG = 56 W; TVJ = 125°C
none repetitive
10 µs
Ptot TC = 25°C 130 W
Symbol Conditions Characteristic
Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 15 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) IC = 0.6 mA; VGE = VCE 5.4 6.5 V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C 250
125 µA
µA
IGES VCE = 0 V ; VGE = ± 20 V 500 nA
td(on)
tr
td(off)
tf
Eon
Eoff
E(rec)off
Inductive load; TVJ = 125°C
VCE = 600 V; IC = 15 A
VGE = ±15 V; RG = 56 W
70
40
250
100
1.55
1.7
ns
ns
ns
ns
mJ
mJ
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600 V; VGE = 15 V; IC = 15 A
tbd
48
pF
nC
RthJC
RthJH with heatsink compound (IXYS test setup) 1.35
1.0
1.7
K/W
K/W
6
1
3
4
2
7
8
5
9
D3
D4
D1
D2
S1
S2
E72873
8
6 5 4
79
3 2 1
Isolated surface
to heatsink
© 2012 IXYS All rights reserved 2 - 5
20120131b
IXA 20PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Equivalent Circuits for Simulation
Conduction
IGBTs (typ. at VGE = 15 V; TJ = 125°C)
S1, S2 V0 = 1.1 V; R0 = 90 mW
Diodes (typ. at TJ = 125°C)
D1, D2 V0 = 1.3 V; R0 = 41 mW
Component
Symbol Conditions Maximum Ratings
TVJ
Tstg
-55...+150
-55...+125
°C
°C
VISOL IISOL < 1 mA; 50/60 Hz 2500 V~
FCmounting force 40 ... 130 N
Symbol Conditions Characteristic Values
min. typ. max.
CPcoupling capacity between shorted
pins and backside metal
90 pF
dS, dA
dS, dA
pin - pin
pin - backside metal
1.65
4
mm
mm
CTI 400
Weight 8 g
I
V
0
R
0
Diodes D1, D2
Symbol Conditions Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
27
18
A
A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 20 A TVJ = 25°C
TVJ = 125°C
2.0
2.0
2.3 V
V
IRM
trr
Erec
IF = 20 A; RG = 56 W; TVJ = 125°C
VR = 600 V; VGE = -15 V
20
350
tbd
A
ns
mJ
RthJC
RthJH
per diode
with heatsink compound (IXYS test setup) 1.75
1.35
2.2
K/W
K/W
Ordering Ordering Name Marking on Product Delivering
Mode
Base
Qty
Ordering
Code
Standard IXA20PG1200DHGLB IXA20PG1200DHGLB Tape&Reel 200 tbd
Diodes D3, D4
Symbol Conditions Maximum Ratings
VRTC = 25°C to 150°C 1200 V
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 1 A TVJ = 25°C
TVJ = 125°C
1.7
1.5
2.2 V
V
IRVR = 1200 V TVJ = 25°C
TVJ = 125°C 30
2 µA
µA
IRM
trr
IF = 1 A; diF /dt = -100 A/µs; TVJ = 25°C
VR = 100 V; VGE = 0 V
2.3
40
A
ns
IXYS
© 2012 IXYS All rights reserved 3 - 5
20120131b
IXA 20PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Dimensions in mm (1 mm = 0.0394“)
Notes:
1) potrusion may add 0.2 mm max. on each side
2) additional max. 0.05 mm per side by punching misalignement
or overlap of dam bar or bending compression
3) DCB area 10 to 50 µm convex;
position of DCB area in relation to plastic rim: ±25 µm
(measured 2 mm from Cu rim)
4) terminal plating: 0.2 - 1 µm Ni + 10 - 25 µm Sn (gal v.)
cutting edges may be partially free of plating
(6x) 1 ±0,05 2)
5,5 ±0,1
0,5 ±0,1
25 ±0,2 1)
18 ±0,1
9±0,1 (3x) 2 ±0,05 2)
23 ±0,2
32,7 ±0,5
2,75 ±0,1
5,5 ±0,1
13,5 ±0,1
16,25 ±0,1
19 ±0,1
A
4±0,05
0,55
±0,1
2±0,2
4,85 ±0,2
3)
0,05
A (8 : 1)
0+0,15
2°
0,1
seating plane
:I IXYS
© 2012 IXYS All rights reserved 4 - 5
20120131b
IXA 20PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
0 1 2 3
0
5
10
15
20
25
30
0 5 10 15 20 25 30 35
0
1
2
3
4
0 1 2 3 4 5
0
5
10
15
20
25
30
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
5
10
15
20
25
30
0 10 20 30 40 50 60
0
5
10
15
20
13 V
40
60 80 100 120 140 160
1.2
1.6
2.0
2.4
2.8
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
VCE [V]
IC
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
IC
[A]
Fig. 3 Typ. tranfer characteristics
VGE [V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collec
tor current
E
off
Fig. 6 Typ. switching energy vs. gate resistance
R
G
[W]
E
[mJ]
I
C
[A]
R
G
= 56 W
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
E
on
E
off
I
C
= 15 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 15 A
V
CE
= 600 V
T
VJ
= 125°C
T
VJ
= 25°C
V
GE
= 15 V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
:I IXYS
© 2012 IXYS All rights reserved 5 - 5
20120131b
IXA 20PG1200DHGLB
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
200 300 400 500 600 700
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
Qrr
[µC]
IF
[A]
VF [V] diF /dt [A/µs]
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VR = 600 V
10 A
20 A
40 A
Fig. 7 Typ. Forward current versus VFFig. 8 Typ. reverse recov.charge Qrr vs. di/dt
200 300 400 500 600 700
0
5
10
15
20
25
30
35
IRR
[A]
diF /dt [A/µs]
TVJ = 125°C
VR = 600 V
10 A
20 A
40 A
Fig. 9 Typ. peak reverse current IRM vs. di/dt
200 300 400 500 600 700
0
100
200
300
400
500
600
700
trr
[ns]
diF /dt [A/µs]
10 A
20 A
40 A
TVJ = 125°C
VR = 600 V
Fig. 10 Typ. recovery time trr versus di/dt
Fig. 11 Typ. recovery energy Erec versus di/dt
200 300 400 500 600 700
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Erec
[mJ]
diF /dt [A/µs]
TVJ = 125°C
VR = 600 V
10 A
20 A
40 A
0.001 0.01 0.1 1 10
0.01
0.1
1
10
tp [s]
ZthJC
[K/W]
Fig. 12 Typ. transient thermal impedance
Diode
IGBT
M
IXYS A Lillelluse Technumgy
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