Vishay Semiconductor Opto Division 的 ILD620/GB, ILQ620/GB 规格书

® E}? § EEG ENE 331%? EE\§ 5°“ E}? 3 mm 69.9 www.vishay.com/doc?99912 DDDDDDDQDDDDQD m M! upmcoug‘evanswers@wshay com www.v\shay.com/doc?91000
ILD620, ILD620GB, ILQ620, ILQ620GB
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Rev. 1.8, 12-Apr-13 1Document Number: 83653
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Optocoupler, Phototransistor Output, AC Input
(Dual, Quad Channel)
DESCRIPTION
The ILD620, ILQ620, ILD620GB, and ILQ620GB are
multi-channel input phototransistor optocouplers that use
inverse parallel GaAs IRLED emitter and high gain NPN
silicon phototransistors per channel. These devices are
constructed using over/under leadframe optical coupling
and double molded insulation resulting in a withstand test
voltage of 5300 VRMS.
The LED parameters and the linear CTR characteristics
make these devices well suited for AC voltage detection.
The ILD620GB and ILQ620GB with its low IF guaranteed
CTRCEsat minimizes power dissipation of the AC voltage
detection network that is placed in series with the LEDs.
Eliminating the phototransistor base connection provides
added electrical noise immunity from the transients found in
many industrial control environments.
FEATURES
• Identical channel to channel footprint
• ILD620 crosses to TLP620-2
• ILQ620 crosses to TLP620-4
• High collector emitter voltage, BVCEO = 70 V
• Dual and quad packages feature:
- Reduced board space
- Lower pin and parts count
- Better channel to channel CTR match
- Improved common mode rejection
• Isolation test voltage 5300 VRMS
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code H, double protection
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884)
•FIMKO
• CQC GB4943.1-2011 and GB8898:2011 (suitable for
installation altitude below 2000 m)
Notes
• Additional options may be possible, please contact sales office.
(1) Also available in tubes, do not put T on the end.
E
C
C
E
1
2
3
4
8
7
6
5
A/C
A/C
A/C
A/C
E
C
C
E
E
C
C
E
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
A/C
A/C
A/C
A/C
A/C
A/C
A/C
A/C
V
DE
Dual Channel
Quad Channel
ORDERING INFORMATION
ILx620xx-X0##T
PART NUMBER
x = D (Dual) or Q (Quad)
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE DUAL CHANNEL QUAD CHANNEL
CTR (%)
UL, cUL, FIMKO 50 to 600 100 to 600 50 to 600 100 to 600
DIP-8 ILD620 ILD620GB - -
SMD-8, option 7 ILD620-X007T (1) ---
SMD-8, option 9 ILD620-X009T (1) ILD620GB-X009T (1) --
DIP-16 - - ILQ620 ILQ620GB
SMD-16, option 7 - - ILQ620-X007 -
SMD-16, option 9 - - ILQ620-X009T (1) ILQ620GB-X009T (1)
VDE, UL, cUL, FIMKO 50 to 600 100 to 600 50 to 600 100 to 600
DIP-16 - - ILQ620-X001 -
SMD-16, option 9 - - ILQ620-X019T (1) -
> 0.1 mm
> 0.7 mm
7.62 mm
DIP
Option 7 Option 9
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Rev. 1.8, 12-Apr-13 2Document Number: 83653
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Forward current IF± 60 mA
Surge current IFSM ± 1.5 A
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.3 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 70 V
Collector current IC50 mA
t < 1 s IC100 mA
Power dissipation Pdiss 150 mW
Derate from 25 °C 2mW/°C
COUPLER
Isolation test voltage t = 1 s VISO 5300 VRMS
Isolation voltage VIORM 890 VP
Total power dissipation Ptot 250 mW
Package dissipation ILD620 400 mW
ILD620GB 400 mW
Derate from 25 °C 5.33 mW/°C
Package dissipation ILQ620 500 mW
ILQ620GB 500 mW
Derate from 25 °C 6.67 mW/°C
Creepage distance 7mm
Clearance distance 7mm
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature (1) 2 mm from case bottom Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = ± 10 mA VF1 1.15 1.3 V
Forward current VR = ± 0.7 V IF2.5 20 μA
Capacitance VF = 0 V, f = 1 MHz CO25 pF
Thermal resistance, junction to lead RthJL 750 K/W
OUTPUT
Collector emitter capacitance VCE = 5 V, f = 1 MHz CCE 6.8 pF
Collector emitter leakage current VCE = 24 V ICEO 10 100 nA
TA = 85 °C, VCE = 24 V ICEO 250μA
Thermal resistance, junction to lead RthJL 500 K/W
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ILD620, ILD620GB, ILQ620, ILQ620GB
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Rev. 1.8, 12-Apr-13 3Document Number: 83653
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
• According to DIN EN 60747-5-5 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
COUPLER
Off-state collector current VF = ± 0.7 V, VCE = 24 V ICEoff 110μA
Collector emitter saturation voltage
IF = ± 8 mA, ICE = 2.4 mA ILD620 VCEsat 0.4 V
ILQ620 VCEsat 0.4 V
IF = ± 1 mA, ICE = 0.2 mA ILD620GB VCEsat 0.4 V
ILQ620GB VCEsat 0.4 V
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Channel/channel CTR match IF = ± 5 mA, VCE = 5 V CTRX/CTRY 1 to 1 3 to 1
CTR symmetry ICE (IF = - 5 mA)/ICE (IF = + 5 mA) ICE(RATIO) 0.5 2
Current transfer ratio
(collector emitter saturated) IF = ± 1 mA, VCE = 0.4 V ILD620 CTRCEsat 60 %
ILQ620 CTRCEsat 60 %
Current transfer ratio
(collector emitter) IF = ± 5 mA, VCE = 5 V ILD620 CTRCE 50 80 600 %
ILQ620 CTRCE 50 80 600 %
Current transfer ratio
(collector emitter saturated) IF = ± 1 mA, VCE = 0.4 V ILD620GB CTRCEsat 30 %
ILQ620GB CTRCEsat 30 %
Current transfer ratio
(collector emitter) IF = ± 5 mA, VCE = 5 V ILD620GB CTRCEsat 100 200 600 %
ILQ620GB CTRCEsat 100 200 600 %
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test 100 %, ttest = 1 s Vpd 1.669 kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM 10 kV
Vpd 1.424 kV
Insulation resistance
VIO = 500 V RIO 1012
VIO = 500 V, Tamb = 100 °C RIO 1011
VIO = 500 V, Tamb 150 °C
(construction test only) RIO 109
Forward current Isi 275 mA
Power dissipation PSO 400 mW
Rated impulse voltage VIOTM 10 kV
Safety temperature Tsi 175 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
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Rev. 1.8, 12-Apr-13 4Document Number: 83653
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Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
T
si
- Safety Temperature (°C)
0
50
100
150
200
250
300
350
400
450
0 25 50 75 100 125 150 175
Phototransistor
P
so
(mW)
IR-diode
I
si
(mA)
t
13930
t1
, t2 = 1 s to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
Vpd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s tstres
t3t4
t2
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
NON-SATURATED
On time IF = ± 10 mA, VCC = 5 V,
RL = 75 , 50 % of VPP
ton 3μs
Rise time IF = ± 10 mA, VCC = 5 V,
RL = 75 , 50 % of VPP
tr20 μs
Off time IF = ± 10 mA, VCC = 5 V,
RL = 75 , 50 % of VPP
toff 2.3 μs
Fall time IF = ± 10 mA, VCC = 5 V,
RL = 75 , 50 % of VPP
tf2μs
Propagation H to L IF = ± 10 mA, VCC = 5 V,
RL = 75 , 50 % of VPP
tPHL 1.1 μs
Propagation L to H IF = ± 10 mA, VCC = 5 V,
RL = 75 , 50 % of VPP
tPLH 2.5 μs
SATURATED
On time IF = ± 10 mA, VCC = 5 V,
RL = 1 k, VTH = 1.5 V, ton 4.3 μs
Rise time IF = ± 10 mA, VCC = 5 V,
RL = 1 k, VTH = 1.5 V, tr2.8 μs
Off time IF = ± 10 mA, VCC = 5 V,
RL = 1 k, VTH = 1.5 V, toff 2.5 μs
Fall time IF = ± 10 mA, VCC = 5 V,
RL = 1 k, VTH = 1.5 V, tf11 μs
Propagation H to L IF = ± 10 mA, VCC = 5 V,
RL = 1 k, VTH = 1.5 V, tPHL 2.6 μs
Propagation L to H IF = ± 10 mA, VCC = 5 V,
RL = 1 k, VTH = 1.5 V, tPLH 7.2 μs
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ILD620, ILD620GB, ILQ620, ILQ620GB
www.vishay.com Vishay Semiconductors
Rev. 1.8, 12-Apr-13 5Document Number: 83653
For technical questions, contact: optocoupleranswers@vishay.com
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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 3 - Non-Saturated Switching Timing
Fig. 4 - Saturated Switching Timing
Fig. 5 - Non-Saturated Switching Timing
Fig. 6 - Saturated Switching Timing
Fig. 7 - LED Forward Current vs.Forward Voltage
Fig. 8 - Collector Emitter Leakage vs. Temperature
iild620_01
VO
VCC = 5 V
RL = 75 Ω
f = 10 kHz,
DF = 50 %
IF= 10 mA
iild620_02
V
O
V
CC
= 5 V
R
L
= 1 kΩ
f = 10 kHz,
DF = 50 %
I
F
= 10 mA
iild620_03
tR
tF
tD
50 %
tPLH
VO
IF
tPLH
tS
ton toff
iild620_04
IF
tR
VO
tD
tStF
tPHL
tPLH
VTH = 1.5 V
iild620_05
- 1.5 - 1.0 - 0.5 0.0 0.5 1.0 1.5
60
40
20
0
- 20
- 40
- 60
VF - LED Forward Voltage (V)
IF - LED Forward Current (mA)
85 °C
25 °C
- 55 °C
iild620_06
- 20 0 20 40 60 80 100
105
104
103
102
101
100
10- 1
10- 2
TA - Ambient Temperature (°C)
ICEO - Collector Emitter (nA)
Typical
VCE = 10 V
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Rev. 1.8, 12-Apr-13 6Document Number: 83653
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Fig. 9 - Maximum LED Current vs. Ambient Temperature
Fig. 10 - Maximum LED Power Dissipation
Fig. 11 - Collector Current vs. Diode Forward Current
Fig. 12 - Normalization Factor for Non-Saturated and Saturated
CTR vs. IF
Fig. 13 - Normalization Factor for Non-Saturated and Saturated
CTR vs. IF
Fig. 14 - Normalization Factor for Non-Saturated and Saturated
CTR vs. IF
- 60 - 40 - 20 0 20 40 60 80 100
120
100
80
60
40
0
20
Tamb - Ambient Temperature (°C)
IF - Maximum LED Current (mA)
TJ (max.) = 100 °C
iild620_07
iild620_08
- 60 - 40 - 20 20 40 60 80 100
200
100
0
50
Tamb - Ambient Temperature (°C)
P
LED
- LED Power (mW)
150
0
iild620_10
CTR
NF
- Normalized CTR Factor
0.1 1 10 100
2.0
1.5
1.0
0.5
0.0
IF - LED Current (mA)
NCTRce
TA = 50 °C
Normalized to:
VCE = 10 V, IF = 5 mA
CTRce(sat) VCE = 0.4 V
NCTRce(sat)
iild620_11
0.1 1 10 100
2.0
1.5
1.0
0.5
0.0
NCTRce
TA = 70 °C
Normalized to:
NCTRce(sat)
CTRNF - Normalized CTR Factor
I
F
- LED Current (mA)
VCE = 10 V, IF = 5 mA
CTRce(sat) VCE = 0.4 V
iild620_12
0.1 1 10 100
2.0
1.5
1.0
0.5
0.0
NCTRce
TA = 100 °C
Normalized to:
NCTRce(sat)
CTR
NF
- Normalized CTR Factor
IF - LED Current (mA)
VCE = 10 V, IF = 5 mA
CTRce(sat) VCE = 0.4 V
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ILD620, ILD620GB, ILQ620, ILQ620GB
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Rev. 1.8, 12-Apr-13 7Document Number: 83653
For technical questions, contact: optocoupleranswers@vishay.com
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Fig. 15 - Peak LED Current vs. Pulse Duration,
Fig. 16 - Maximum Detector Power Dissipation
Fig. 17 - Maximum Collector Current vs. Collector Voltage
PACKAGE DIMENSIONS in millimeters
iild620_13
10- 6 10- 5 10- 4 10- 3 10- 2 10- 1 100101
10 000
1000
100
10
t - LED Pulse Duration (s)
I
F(pk)
- Peak LED Current (mA)
0.005
0.05
0.02
0.01
0.1
0.2
0.5
Duty Factor
t
DF = /t
τ
τ
iild620_14
- 60 - 40 - 20 0 20 40 60 80 100
0
50
100
150
200
Tamb - Ambient Temperature (°C)
P
DET
- Detector Power (mW)
iild620_15
0.1 10 100
1000
100
10
1
0.1
VCE - Collector Emitter Voltage (V)
ICE - Collector Current (mA)
25 °C
50 °C
75 °C
90 °C
1
Rth = 500 °C /W
i178006
Pin one ID
6.645 ± 0.165
9.77 ± 0.14
0.95 ± 0.19
4° typ.
2.54 typ.
0.51 ± 0.05
3.555 ± 0.255
0.70 ± 0.19
10°
3° to 9°
7.62 typ.
0.25 ± 0.05
3.045 ± 0.255
6.095 ± 0.255
4321
0.79
1.27
567 8
ISO method A
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ILD620, ILD620GB, ILQ620, ILQ620GB
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Rev. 1.8, 12-Apr-13 8Document Number: 83653
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PACKAGE MARKING (example)
Notes
• Only option 1 and 7 reflected in the package marking.
• The VDE logo is only marked on option 1 parts.
• Tape and reel suffix (T) is not part of the package marking.
i178007
6.48
6.81
19.77
20.07
0.76
1.14
4°
2.54 typ.
10°
typ.
3° to 9°
0.46
0.56 0.20
0.30
2.79
3.30
Pin one ID
3.30
3.81
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
7.62 typ.
5.84
6.35
1.27
ISO method A
0.51
0.89
0.79
20802-16
Option 7 Option 9
8 min.
7.62 typ.
4.3 ± 0.3
0.6 min.
10.3 max.
0.7 min.
10.3 max.
7.62 typ.
8 min.0.6 min.
0.1 ± 0.1 3.6 ± 0.3
2.54 R 0.25
1.78
0.76
1.52
8 min.
11.05
2.54 R 0.25
1.78
0.76
1.52
8 min.
11.05
21764-95
ILD620
V YWW H 68
ILQ620
V YWW H 68
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