NXP USA Inc. 的 KMZ60 规格书

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1. Product profile

1.1 General description

The MagnetoResistive (MR) sensor with integrated amplifier is designed for angular

control applications and BrushLess DC (BLDC) motors with even-numbered pole pairs.

It consists of two microchips within one package, an angle sensor and an amplifier

Integrated Circuit (IC). The circuit delivers cosine and sine output signals related to the

angle of a rotating magnetic field. The output voltage range is ratiometric related to the

supply voltage. The Temperature Coefficient (TC) of the sensor amplitude can be

compensated. A ratiometric output voltage linear to the temperature is delivered.

A Power-down mode is implemented.

1.2 Features and benefits

High precision sensor for magnetic angle measurement

Single-ended cosine and sine outputs

Ratiometric output voltages

Tamb =40 Cto+150C

Temperature compensated output signal amplitude

Temperature related ratiometric reference voltage

Power-down mode to enable or disable the device

Single package angle sensor with integrated instrumentation amplifier

RoHS compliant and free of halogen and antimony (Dark Green compliant)

1.3 Applications

The KMZ60 angle sensor is dedicated for rotor position detection for BLDC motors.

Beyond that the KMZ60 is applicable for Electronic Power Steering (EPS) applications,

steering angle measurement, window wiper position detection and general contactless

angular measurement (e.g. throttle valves or actuators). The KMZ60 is fully automotive

qualified as well as applicable for industrial and consumer applications.

Typical applications:

BLDC motor (e.g. EPS)

Window wiper position detection

Steering angle measurement

General contactless angular measurement (e.g. throttle valves or actuators)

Automotive, industrial and consumer applications

KMZ60

Angle sensor with integrated amplifier

Rev. 2 — 7 February 2014 Product data sheet

SO8

HHHH HHHH4

Product data sheet Rev. 2 — 7 February 2014 2 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

1.4 Quick reference data

[1] Induced voltage from a rotating strong magnetic field may impact the performance but without damage.

[2] Value calculated only with third and fifth harmonic of the spectrum of output signal amplitude Vo(VOUT1) and

Vo(VOUT2) by ideal homogeneous field.

[3] Between pin VCC and pin GND, soldered close to the package.

[4] Operating as sink or source.

[5] Between pin VOUT1 and pin VCC or pin GND and between pin VOUT2 and pin VCC or pin GND.

2. Pinning information

3. Ordering information

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 2.7 - 5.5 V

nHmagnetic field rotational

frequency 0 - 25000 r/min

Hext external magnetic field

strength

[1] 25 - - kA/m

 angular inaccuracy within a static

field

[2] 0.1 - +0.1 deg

Cblock(ext) external blocking

capacitance

[3] 100 - - nF

RL(o)ext external output load

resistance on pin VOUT1

and pin VOUT2

[4] 5- k

CL(o)ext external output load

capacitance

[5] 0.5 - 10 nF

Table 2. Pinning

Pin Symbol Description Simplified outline

1 TCC_EN temperature coefficient compensation enable

2 VOUT1 cosine channel output

3 GND ground

4 VOUT2 sine channel output

5 VTEMP temperature reference output voltage

6 GND ground

CC supply voltage

8 POWERDOWN_EN Power-down mode enable

Table 3. Ordering information

Type number Package

Name Description Version

KMZ60 SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

Product data sheet Rev. 2 — 7 February 2014 3 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

4. Functional diagram

5. Functional description

Figure 1 shows the complete circuit consisting of the MR sensor element realized by two

interleaved Wheatstone bridges for cosine and sine signals. Also the supporting functions

for control circuit and signal amplification are included. A Proportional To Absolute

Temperature (PTAT) reference current, a voltage-to-current converter and a current

multiplier are generating the reference current which is supply voltage, temperature and

resistor dependent. This reference current controls the supply voltage of both sensor

bridges to compensate their TC via a supply buffer. For noise and ElectroMagnetic

Compatibility (EMC) suppression low-pass filtering of the bridge supply is implemented.

The bridge output voltages are amplified by a constant factor and fed to the rail-to-rail

output buffers. The single-ended outputs are capable to drive inputs e.g. of an external

Analog-to-Digital Converter (ADC) referenced to VCC. For an optimal use of the ADC input

range the cosine and sine output voltages are tracking ratiometric with the supply voltage.

To achieve good signal performance, both signals are matched in amplitude and phase.

The amplifier bandwidth is sufficient for low phase delay at maximum specified speed of

rotation. Pin TCC_EN is used to enable the temperature compensation. Two modes are

defined. The TC of the MR sensor signal amplitude is largely compensated by the

amplifier if pin TCC_EN is connected to VCC. The amplified sensor signal, which has

a negative TC, is available at the output pins VOUT1 and VOUT2 if pin TCC_EN is

Fig 1. Functional diagram with sensor bridge

001aan885

R3C3

FUNCTIONAL

CONTROL

BROKEN

BOND WIRE

DETECTION

TEMPERATURE

SENSOR

GNDS

VCC

TCC_EN

POWERDOWN_EN

VOUT1

VOUT2

VTEMP

GND

VDDS

CURRENT

MULTIPLIER

U / I

PTAT

REF

VcosITC_comp

IPTAT

Iconst

I = f(VCC, Tamb, R2)

IT = f(Tamb)

IV = f(VCC) TC comp

enable VIN1P

SENSOR

Vsin

GAIN = 6

GAIN = 7

BUFFER

VIN1N

VCC / 2

VIN2P

VIN2N

Figure 2 u 21

Product data sheet Rev. 2 — 7 February 2014 4 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

connected to ground. Pin VTEMP delivers a temperature dependent output voltage

VO(TEMP) in both cases, which is tracking ratiometric with the supply voltage. It uses the

internal PTAT reference and can be left open or connected to ground or preferably to VCC

if not used. The pin POWERDOWN_EN input switches the device into Power-down mode

and sets the pin VOUT1 and pin VOUT2 output to high impedance and disables

pin VTEMP. It must be connected to ground if not used. An implemented broken bond

wire detection for all internal connections to the MR sensor is drawing the output voltages

Vo(VOUT1) and Vo(VOUT2) to the ground level in case of a failure. Both outputs are

short-circuit proof.

The integrated MR sensor element is a sensitive magnetic field sensor, employing the MR

effect of thin film permalloy. The sensor contains two parallel supplied Wheatstone

bridges, which enclose a sensitive angle of 45 degrees. A rotating magnetic field in the

surface parallel to the chip (x-y plane) will deliver two independent sinusoidal output

signals, one following a cos(2) and the second following a sin(2) function.  is the

mechanical angle between sensor and field direction.

The definition of the output signal amplitude Vo(VOUT1) and Vo(VOUT2) and the output offset

voltage Voffset(VOUT1) and Voffset(VOUT2) of KMZ60 for a mechanical angle of 360 degrees is

shown in Figure 2.

(1) Offset positive

(2) Offset negative

Fig 2. Definition of output signal amplitude and offset voltage

001aan886

0 90 180 270 360

(deg)

Vo(VOUT2)

Vo(VOUT2) +

Voffset(VOUT2)(2)

Vo(VOUT1)

Vo(VOUT1) +

Voffset(VOUT1)(1)

93 %

VCC

50 %

VCC

7 %

VCC

Voffset(VOUT1)

Voffset(VOUT2)

GND 2S 2: 2S

Product data sheet Rev. 2 — 7 February 2014 5 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

6. Internal circuitry

Table 4. Internal circuits for each pin

Symbol Pin Equivalent circuit

TCC_EN 1

VOUT1 2

GND 3 and 6

VOUT2 4

TCC_EN

GND

001aan719

VCC

GND

VOUT1

GND

VOUT2

100 Ω

001aan720

Product data sheet Rev. 2 — 7 February 2014 6 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

7. Limiting values

VTEMP 5

VCC 7

POWERDOWN_EN 8

Table 4. Internal circuits for each pin …continued

Symbol Pin Equivalent circuit

VTEMP

GND

001aan723

GND

001aan722

001aan721

VCC

POWERDOWN_EN

GND

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage 0.3 +6 V

VIinput voltage on pins TCC_EN and POWERDOWN_EN 0.3 VCC +0.3 V

VOoutput voltage on pins VOUT1, VOUT2 and VTEMP 0.3 VCC +0.3 V

Tamb ambient temperature 40 +160 C

Product data sheet Rev. 2 — 7 February 2014 7 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

8. Recommended operating conditions

9. Characteristics

Table 6. Operating conditions

Symbol Parameter Conditions Min Max Unit

VCC supply voltage 2.7 5.5 V

Tamb ambient temperature 40 +150 C

Table 7. Characteristics

Tamb =25



C; angle accuracies referred to homogeneous excitation magnetic fields of Hext = 25 kA/m directed parallel to MR

sensor surface; all voltages are related to ground potential of pin GND; the signal outputs and offset voltages on pin VOUT1

and pin VOUT2 are related to the common mode level of VCC / 2; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 2.7 - 5.5 V

ICC supply current under normal condition

dependent on VCC, RL(o)ext and

rotation frequency;

no short-circuit of outputs

2.0 6.0 10.0 mA

Power-down mode;

VCC on pin POWERDOWN_EN;

VCC or ground on pin TCC_EN

--16A

Ipu pull-up current pin TCC_EN to ground 5-0.3 A

Ipd pull-down current VCC on pin POWERDOWN_EN 0.01 - 3 A

Cblock(ext) external blocking

capacitance

[1] 100 - - nF

Rsc short-circuit resistance pin TCC_EN to VCC or ground - - 10 

Rooutput resistance on pin VOUT1, pin VOUT2 and

pin VTEMP 50 - 150 

on pin VOUT1 and pin VOUT2;

VCC on pin POWERDOWN_EN 500 - - k

pin VTEMP to ground; VCC on

pin POWERDOWN_EN 35 - 85 k

RL(o)ext external output load

resistance on pin VOUT1 and pin VOUT2 [2] 5-k

pin VTEMP to ground 20 - 100 k

CL(o)ext external output load

capacitance on pin VOUT1 and pin VOUT2 [3] 0.5 - 10 nF

on pin VTEMP 22 33 39 nF

Vooutput voltage on pin VOUT1 and pin VOUT2;

without signal clipping;

RL(o)ext =5k

0.07VCC - 0.93VCC V

VOL LOW-level output voltage on pin VOUT1 and pin VOUT2;

broken bond wire detected;

RL(o)ext =5k to ground

- - 0.05VCC V

on pin VOUT1 and pin VOUT2;

broken bond wire detected;

RL(o)ext =5k to VCC

- - 0.06VCC V

Product data sheet Rev. 2 — 7 February 2014 8 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

Isc short-circuit current to ground; on pin VOUT1 and

pin VOUT2

[4] 6-- mA

to ground; on pin VTEMP [4] 2-- mA

to VCC; on pin VOUT1 and

pin VOUT2

[5] --6mA

to VCC; on pin VTEMP [5] --2mA

CL(i)ext external input load

capacitance on pin POWERDOWN_EN for

ElectroMagnetic Interference

(EMI) reason

100 - - nF

VIL LOW-level input voltage on pin POWERDOWN_EN - - 0.6 V

VIH HIGH-level input voltage on pin POWERDOWN_EN VCC 0.6 - - V

tstartup start-up time to 98 % of Vo(VOUT1) or

Vo(VOUT2) end level after

minimum VCC was reached

--110s

from power-down to 98 % of

Vo(VOUT1) or Vo(VOUT2) end level --110s

Hext external magnetic field

strength

[6] 25 - - kA/m

err reference position angle

error

[7] 2-+2deg

startup start-up angle error Tamb =40 C; RL(o)ext =5k10 - +10 deg

Tamb =25C; RL(o)ext =5k10 - +10 deg

Tamb =85C; RL(o)ext =5k13 - +13 deg

Tamb =105C; RL(o)ext =5k14.5 - +14.5 deg

Tamb =150C; RL(o)ext =5k19 - +19 deg

Dynamic characteristics for angular accuracy calculations

nHmagnetic field rotational

frequency 0 - 25000 r/min

k amplitude synchronism [8] 98 - 102 %

err phase error [9] --1.5deg

 angular inaccuracy within a static field [10] 0.1 - +0.1 deg

PSRR power supply rejection ratio fripple = 500 kHz 12 - - dB

Vn(o)(RMS) RMS output noise voltage on pin VOUT1, pin VOUT2 and

pin VTEMP; no magnetic signal

[11] - - 500 V

Temperature dependency of output on pin VTEMP

VOoutput voltage Tamb =40 C 0.057VCC - 0.147VCC V

Tamb =25C 0.248VCC - 0.351VCC V

Tamb =85C 0.445VCC - 0.559VCC V

Tamb =105C 0.515VCC - 0.631VCC V

Tamb =150C 0.655VCC - 0.786VCC V

Table 7. Characteristics …continued

Tamb =25



C; angle accuracies referred to homogeneous excitation magnetic fields of Hext = 25 kA/m directed parallel to MR

sensor surface; all voltages are related to ground potential of pin GND; the signal outputs and offset voltages on pin VOUT1

and pin VOUT2 are related to the common mode level of VCC / 2; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 2 — 7 February 2014 9 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

Temperature dependency of signal outputs with TC compensation (VCC on pin TCC_EN)

Vooutput voltage peak-to-peak value;

on pin VOUT1; RL(o)ext =5k

Tamb =40 C 0.42VCC 0.56VCC 0.70VCC V

Tamb =25C 0.46VCC 0.56VCC 0.70VCC V

Tamb =85C 0.42VCC 0.53VCC 0.70VCC V

Tamb =105C 0.395VCC 0.51VCC 0.695VCC V

Tamb =150C 0.35VCC 0.48VCC 0.68VCC V

peak-to-peak value;

on pin VOUT2; RL(o)ext =5k

Tamb =40 C 0.42VCC 0.56VCC 0.70VCC V

Tamb =25C 0.46VCC 0.56VCC 0.70VCC V

Tamb =85C 0.42VCC 0.53VCC 0.70VCC V

Tamb =105C 0.395VCC 0.51VCC 0.695VCC V

Tamb =150C 0.35VCC 0.48VCC 0.68VCC V

Voffset offset voltage on pin VOUT1; RL(o)ext =5k

Tamb =40 C0.08VCC -+0.08V

CC V

Tamb =25C0.08VCC -+0.08V

CC V

Tamb =85C0.09VCC -+0.09V

CC V

Tamb =105C0.095VCC - +0.095VCC V

Tamb =150C0.11VCC -+0.11V

CC V

on pin VOUT2; RL(o)ext =5k

Tamb =40 C0.08VCC -+0.08V

CC V

Tamb =25C0.08VCC -+0.08V

CC V

Tamb =85C0.09VCC -+0.09V

CC V

Tamb =105C0.095VCC - +0.095VCC V

Tamb =150C0.11VCC -+0.11V

CC V

Table 7. Characteristics …continued

Tamb =25



C; angle accuracies referred to homogeneous excitation magnetic fields of Hext = 25 kA/m directed parallel to MR

sensor surface; all voltages are related to ground potential of pin GND; the signal outputs and offset voltages on pin VOUT1

and pin VOUT2 are related to the common mode level of VCC / 2; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 2 — 7 February 2014 10 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

[1] Between pin VCC and pin GND, soldered close to the package.

[2] Operating as sink or source.

[3] Between pin VOUT1 and pin VCC or pin GND and between pin VOUT2 and pin VCC or pin GND.

[4] Short-circuit to pin GND within a time limit of 10 minutes.

[5] Short-circuit to pin VCC within a time limit of 10 minutes.

[6] Induced voltage from a rotating strong magnetic field may impact the performance but without damage.

[7] Angle error due to reference position defined by the leadframe, sample based controlled at assembly line.

[8] By calculation of peak-to-peak amplitude relation k = 100 Vo(VOUT1) /V

o(VOUT2).

[9] Rotation frequency dependent phase error, after offset correction, amplitude calibration and arctangent calculation.

[10] Value calculated only with third and fifth harmonic of the spectrum of output signal amplitude Vo(VOUT1) and Vo(VOUT2) by ideal

homogeneous field.

[11] Maximum limit is valid with external first order filter of 80 kHz.

Temperature dependency of signal outputs without TC compensation (pin TCC_EN to ground)

Vooutput voltage peak-to-peak value;

on pin VOUT1; RL(o)ext =5k

Tamb =40 C 0.54VCC 0.66VCC 0.76VCC V

Tamb =25C 0.41VCC 0.49VCC 0.57VCC V

Tamb =85C 0.31VCC 0.37VCC 0.45VCC V

Tamb =105C 0.275VCC 0.34VCC 0.425VCC V

Tamb =150C 0.21VCC 0.27VCC 0.36VCC V

peak-to-peak value;

on pin VOUT2; RL(o)ext =5k

Tamb =40 C 0.54VCC 0.66VCC 0.76VCC V

Tamb =25C 0.41VCC 0.49VCC 0.57VCC V

Tamb =85C 0.31VCC 0.37VCC 0.45VCC V

Tamb =105C 0.275VCC 0.34VCC 0.425VCC V

Tamb =150C 0.21VCC 0.27VCC 0.36VCC V

Voffset offset voltage on pin VOUT1; RL(o)ext =5k

Tamb =40 C0.07VCC -+0.07V

CC V

Tamb =25C0.07VCC -+0.07V

CC V

Tamb =85C0.07VCC -+0.07V

CC V

Tamb =105C0.075VCC - +0.075VCC V

Tamb =150C0.08VCC -+0.08V

CC V

on pin VOUT2; RL(o)ext =5k

Tamb =40 C0.07VCC -+0.07V

CC V

Tamb =25C0.07VCC -+0.07V

CC V

Tamb =85C0.07VCC -+0.07V

CC V

Tamb =105C0.075VCC - +0.075VCC V

Tamb =150C0.08VCC -+0.08V

CC V

Table 7. Characteristics …continued

Tamb =25



C; angle accuracies referred to homogeneous excitation magnetic fields of Hext = 25 kA/m directed parallel to MR

sensor surface; all voltages are related to ground potential of pin GND; the signal outputs and offset voltages on pin VOUT1

and pin VOUT2 are related to the common mode level of VCC / 2; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Figure 3 m Figure 4

Product data sheet Rev. 2 — 7 February 2014 11 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

10. Definitions of errors

10.1 Reference position angle error

The reference position angle error err is defined as absolute mounting position deviation

of the MR sensor in a homogeneous excitation magnetic field related to the reference

position0 defined by the leadframe. Marking position for angle0= 0 degree and Y = 0

position is referred parallel to the straight connection line of the 2nd and 7th package pin.

The X = 0 position is referred to the middle distance of the package top (see Figure 3).

10.2 Output amplitude matching error

The output amplitude matching error k is defined as the relation between both output

channel amplitudes at continuously rotating magnetic excitation of the MR sensor.

k=100Vo(VOUT1) (p-p) / Vo(VOUT2) (p-p) (the angle error can be derived from Figure 4)

Fig 3. Phase error caused by mounting tolerances

001aan887

sensor

die

err

Figure 5 Figure 6

Product data sheet Rev. 2 — 7 February 2014 12 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

10.3 Output signal amplitude

The peak-to-peak output signal amplitude of Vo(VOUT1) and Vo(VOUT2) is related to VCC.

Figure 5 and Figure 6 show the specified amplitude range over temperature within its

minimum and maximum limits.

Fig 4. Angle error caused by output amplitude synchronism

k (%)

98 10210199 100

001aan888

0.1

0.2

0.3

αerr

(deg)

TC compensation on

Fig 5. Output signal peak-to-peak amplitude with pin TCC_EN connected to VCC

Tamb (°C)

-40 16012040 800

001aan889

0.4

0.6

0.8

Vo / VCC

(V / V)

0.2

Figure 7 Figure 8

Product data sheet Rev. 2 — 7 February 2014 13 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

10.4 TC of output signal amplitude

The TC of the peak-to-peak output signal amplitude of Vo(VOUT1) and Vo(VOUT2) is related

to VCC. Figure 7 and Figure 8 show the specified TC range of the amplitude over

temperature within its minimum and maximum limits. The limits were calculated from

single MR sensor measurements and circuit measurements.

TC compensation off

Fig 6. Output signal peak-to-peak amplitude with pin TCC_EN connected to ground

Tamb (°C)

-40 16012040 800

001aan890

0.4

0.6

0.8

Vo / VCC

(V / V)

0.2

TC compensation on

Fig 7. TC of output signal peak-to-peak amplitude with pin TCC_EN connected to VCC

Tamb (°C)

-40 16012040 800

aaa-001506

-1

TCV(o) / VCC

(mV / V) / K

-2

Figure 9 Figure 10

Product data sheet Rev. 2 — 7 February 2014 14 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

10.5 TC of output signal offset

The TC of the output signal offset of Voffset(VOUT1) and Voffset(VOUT2) is related to VCC.

Figure 9 and Figure 10 show the specified TC range of the offset over temperature within

its minimum and maximum limits. The limits were calculated from single MR sensor

measurements and circuit measurements.

TC compensation off

Fig 8. TC of output signal peak-to-peak amplitude with pin TCC_EN connected to

ground

Tamb (°C)

-40 16012040 800

aaa-001507

-2

-3

-1

-4

TCV(o) / VCC

(mV / V) / K

TC compensation on

Fig 9. TC of output signal offset with pin TCC_EN connected to VCC

-0.2

0.2

0.6

-0.6

amb

(°C)

-40 16012040 800

aaa-001508

V(offset)

/ V

(mV / V) / K

Figure 11 Figure 12

Product data sheet Rev. 2 — 7 February 2014 15 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

10.6 Start-up angle error

The start-up angle error is defined as maximum deviation by calculating the angle from

the offset voltages Voffset(VOUT1) and Voffset(VOUT2) and the peak-to-peak signal amplitudes

Vo(VOUT1) and Vo(VOUT2).

Figure 11 and Figure 12 show the maximum start-up angular error related to 180 degree

angular range of the MR sensor after one point calibration at 25 C (from worst case

simulations).

TC compensation off

Fig 10. TC of output signal offset with pin TCC_EN connected to ground

-0.1

0.1

0.3

-0.3

amb

(°C)

-40 16012040 800

aaa-001509

V(offset)

/ V

(mV / V) / K

TC compensation on

Fig 11. Start-up angle error after calibration with pin TCC_EN connected to VCC

Tamb (°C)

-40 16012040 800

001aan891

start-up error

(deg)

Figure 13

Product data sheet Rev. 2 — 7 February 2014 16 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

10.7 Phase error

The phase error err is defined as a rotation frequency dependent error due to bandwidth

limitation of the operational amplifiers. Vo(VOUT1) and Vo(VOUT2) are retarded by the device

propagation delay, referred to the actual angle direction of the rotating magnetic field

(see Figure 13). The typical characteristics value can be used for a 1st order

compensation of this error on very high rotations per minute. For low rotational speed

systems this error component is negligible.

TC compensation off

Fig 12. Start-up angle error after calibration with pin TCC_EN connected to ground

Tamb (°C)

-40 16012040 800

001aan892

0.8

1.2

0.4

1.6

2.0

start-up error

(deg)

4, Fi ure 14

Product data sheet Rev. 2 — 7 February 2014 17 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

10.8 Temperature behavior of pin VTEMP output

The temperature dependent VO(TEMP) reference voltage with its specified tolerances is

shown in Figure 14. The output level is related to ground and tracking ratiometric with

VCC. Stability is guaranteed at the specified output load.

(1) VOUT1

(2) VOUT2

Fig 13. Angle error caused by amplifier bandwidth

001aan893

delay

(deg)

500 100 150 200 250 300

reference (deg)

350

500 100 150 200 250 300

reference (deg)

350

180

120

Vo / VCC

(V / V)

φerr

(2)(1)

-1

φerr

Product data sheet Rev. 2 — 7 February 2014 18 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

11. Electromagnetic compatibility

11.1 Emission (IEC 61967-4)

EMC tests carried out according to IEC 61967-4, part 4 under typical specification

conditions at VCC = 5 V without rotational field excitation. Pin TCC_EN connected to VCC

or ground.

Direct coupling method: 150 , 6.8 nF, frequency band 150 kHz to 1 GHz

Test severity limit: Class III local with level 10-K

Test ensured on pins: VOUT1, VOUT2, VTEMP, VCC and POWERDOWN_EN related to

ground with specified load capacitors

11.2 Immunity (IEC 62132-4)

EMC tests carried out according to IEC 62132-4, under typical specification conditions at

VCC = 3.3 V with different constant field orientations. Pin TCC_EN connected to VCC or

ground.

Direct power injection: 150 , 6.8 nF, frequency band 150 kHz to 1 GHz

Test severity limit: 12 dBm

Test ensured on pins: VOUT1, VOUT2, VTEMP, VCC and POWERDOWN_EN related to

ground with specified load capacitors

The mathematically calculated mechanical angular error can be derived from measured

output signals on pin VOUT1 and pin VOUT2. It will not deviate more than 1.8 degrees

during the EMC immunity test.

The deviation of output voltage VO(TEMP) is less than 0.009VCC which equals with an

additional error less than 2.5 C.

Fig 14. Temperature behavior of pin VTEMP output

Tamb (°C)

-40 16012040 800

001aan894

0.4

0.2

0.6

0.8

Vo(VTEMP) / VCC

(V / V)

max

min

awasnsss

Product data sheet Rev. 2 — 7 February 2014 19 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

12. ElectroStatic Discharge (ESD)

12.1 Human body model

The KMZ60 is protected against 4 kV, according to the human body model at 100 pF and

1.5 k. The test is according to AEC-Q100, REV-G, method 002.

12.2 Machine model

The KMZ60 is protected against 400 V, according to the machine model. The test is

according to AEC-Q100, REV-G, method 003.

12.3 Charged-device model

The KMZ60 is protected against 500 V of direct charge injection with the 4 pF verification

model, according to the charged-device model. The test is according to AEC-Q100,

REV-G, method 011.

12.4 Latch-up protection

The KMZ60 is latch-up protected against 110 mA at maximum ambient temperature.

The test is according to AEC-Q100, REV-G, method 004.

13. Application information

The MR sensor is designed for applications with a separate Electronic Control Unit (ECU)

containing an ADC with its references connected to the supply voltage. With the ADC

input resolution related to VCC in the same way as the MR sensor output voltage range

(ratiometric), the signal dependency on supply voltage changes is minimized.

13.1 Connection to ECU

Long connections on the PCB should be avoided due to the limited driving capability of

both amplifier outputs. Shielding of the signal lines is recommended. The load capacitors

and resistors should be matched for best angular accuracy.

Fig 15. Application diagram of KMZ60 with separate ECU on Printed-Circuit Board (PCB)

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Product data sheet Rev. 2 — 7 February 2014 20 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

In front of the ADC inputs bandwidth limitation filters should be implemented related to the

used sampling frequency of the system to reduce the noise bandwidth (see Figure 15).

The load resistors RL(o)ext are representing the input load of the filter application and the

ADC.

The ECU may be used for arctan and offset calculation, offset storage and calibration.

13.2 EMI

A blocking capacitor Cblock(ext) and the load capacitors CL(o)ext for the signal outputs are

necessary to fulfill the EMI requirements. They should be soldered close to the related IC

pins.

To protect the output stages VOUT1 and VOUT2 an internal resistance is implemented.

It works like a voltage divider together with the load resistance RL(o)ext.

Capacitor CL(o)ext is required on pin VTEMP for output stability. The pin can be soldered

directly to ground or preferably to VCC on the PCB if it is not used.

Capacitor CL(i)ext is required on pin POWERDOWN_EN to fulfill the EMI demands.

The pin may be soldered directly to ground on the PCB if it is not used.

13.3 Power consumption

The power consumption is dependent on VCC, temperature, load resistance RL(o)ext,

load capacitance CL(o)ext and frequency of the rotating magnetic field. It is recommended

to refer the load resistance RL(o)ext and the load capacitance CL(o)ext to ground although a

connection to VCC is likewise possible. VO(TEMP) is related to ground via the external load

resistance RL(o)ext on pin VTEMP.

The output voltages Vo(VOUT1), Vo(VOUT2) and VO(TEMP) are protected against short-circuit

to VCC or ground by current limitation within the given time duration.

Placing the device 180 degrees rotated into the socket may lead to damages, if the supply

current is not limited to 100 mA.

13.4 TC compensation

KMZ60 can be used as specified with TC compensation of the MR sensor signal.

Pin TCC_EN has to be connected to VCC.

The pin TCC_EN has to be connected to ground if no TC compensation is required.

The output signal amplitude will decrease with increasing temperature related to the TC of

the MR sensor. The angle accuracy might be slightly reduced due to the limited resolution

of the used ADC.

13.5 Offset of signal outputs on pin VOUT1 and pin VOUT2

The single-ended output signals are referenced to VCC / 2 generated internally on chip.

Offsets are originated from matching inaccuracies of the production process. For a good

accuracy matching of the external load is additionally required.

For ESD and EMC protection the outputs are containing a series resistance.

The influence of this series resistance is minimized with a large output load resistance.

Product data sheet Rev. 2 — 7 February 2014 21 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

13.6 Temperature reference output

On pin VTEMP a temperature dependent reference voltage VO(TEMP) is available.

This voltage is derived from an internal PTAT reference. For measurement with the

proposed ADC the voltage is tracking ratiometric with VCC. The reference can be used for

a temperature dependent offset and angular error calibration.

The output can be left open or connected to ground or preferably to VCC if not used.

13.7 Switching into Power-down mode

The Power-down mode can be activated by switching pin POWERDOWN_EN to VCC.

Within this mode the output pin VOUT1 and pin VOUT2 are set to high impedance to

avoid current consumption across the load resistors.

Pin VTEMP will be drawn to the ground level via an internal resistance.

The Power-down mode can be entered if pin TCC_EN is connected to VCC or ground.

13.8 Circuit behavior in case of broken bond wires

The output voltages Vo(VOUT1) and Vo(VOUT2) will be drawn to the ground level if the

implemented broken bond wire detection for all internal connections to the MR sensor is

activated.

With a broken bond wire on pin TCC_EN the pad will be drawn internally to VCC.

This activates the TC compensation for both signal outputs on pin VOUT1 and

pin VOUT2.

A broken bond wire on pin VTEMP will interrupt the output signal on pin VTEMP.

A broken bond wire on pin POWERDOWN_EN will disable the Power-down mode and

keep the device active via an internal pull-down.

13.9 Signal dependence on air-gap distance

KMZ60 measures the direction of the external magnetic field within its x-y plane.

The result is widely independent of the field strength as far as it is above the specified

minimum value. Within a homogeneous field in x-y direction the result is independent of its

placement in z direction (air-gap).

The nominal z distance of the internal x-y plane to the top surface of the plastic package is

405 m.

14. Test information

14.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q100 Rev-G - Failure mechanism based stress test qualification for

integrated circuits, and is suitable for use in automotive applications.

Figure 16 ET 3, 333% 1777+ HML 1‘ m Figure 18

Product data sheet Rev. 2 — 7 February 2014 22 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

15. Package information

15.1 Sensor reference position

Definition of angle reference related to the edges of pin 2 and pin 7 is shown in Figure 16.

Distance of sensor plane related to plastic top of the package is shown in Figure 17.

The nominal distance is 405 m (minimum 290 m and maximum 513 m).

Distance between MR top surface and package top surface = (package top

thickness + downset) (die thickness + glue line thickness).

15.2 Note

The package outline SOT96-1 (see Figure 18) allows a general wide tolerance for the

lead frame thickness and the lead width. The actual reference for KMZ60 is:

c = 0.203 mm 0.008 mm; bp=0.380mm0.020 mm and e value does not vary

Fig 16. Definition of angle reference position

Fig 17. Distance between the MR top surface and the package top surface

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all leads

pin 1

2° max

all leads

0°

0.2

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Product data sheet Rev. 2 — 7 February 2014 23 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

16. Package outline

Fig 18. Package outline SOT96-1 (SO8)

UNIT A

max. A1A2A3bpcD

(1) E(2) (1)

ELL

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REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

inches

1.75 0.25

0.10 1.45

1.25 0.25 0.49

0.36 0.25

0.19 5.0

4.8 4.0

3.8 1.27 6.2

5.8 1.05 0.7

0.6 0.7

0.3 8

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

1.0

0.4

SOT96-1

detail X

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(A )

pin 1 index

076E03 MS-012

0.069 0.010

0.004 0.057

0.049 0.01 0.019

0.014 0.0100

0.0075 0.20

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0.15 0.05 0.244

0.228 0.028

0.024 0.028

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0.039

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0 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

99-12-27

03-02-18

Product data sheet Rev. 2 — 7 February 2014 24 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

17. Soldering of SMD packages

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note AN10365 “Surface mount reflow

soldering description”.

17.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not

suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

17.2 Wave and reflow soldering

Wave soldering is a joining technology in which the joints are made by solder coming from

a standing wave of liquid solder. The wave soldering process is suitable for the following:

•Through-hole components

•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solder lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reflow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature profile. Leaded packages,

packages with solder balls, and leadless packages are all reflow solderable.

Key characteristics in both wave and reflow soldering are:

•Board specifications, including the board finish, solder masks and vias

•Package footprints, including solder thieves and orientation

•The moisture sensitivity level of the packages

•Package placement

•Inspection and repair

•Lead-free soldering versus SnPb soldering

17.3 Wave soldering

Key characteristics in wave soldering are:

•Process issues, such as application of adhesive and flux, clinching of leads, board

transport, the solder wave parameters, and the time during which components are

exposed to the wave

•Solder bath specifications, including temperature and impurities

Figure 19 Table 8 9 Figure 19

Product data sheet Rev. 2 — 7 February 2014 25 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

17.4 Reflow soldering

Key characteristics in reflow soldering are:

•Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to

higher minimum peak temperatures (see Figure 19) than a SnPb process, thus

reducing the process window

•Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

•Reflow temperature profile; this profile includes preheat, reflow (in which the board is

heated to the peak temperature) and cooling down. It is imperative that the peak

temperature is high enough for the solder to make reliable solder joints (a solder paste

characteristic). In addition, the peak temperature must be low enough that the

packages and/or boards are not damaged. The peak temperature of the package

depends on package thickness and volume and is classified in accordance with

Table 8 and 9

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperatures during reflow

soldering, see Figure 19.

Table 8. SnPb eutectic process (from J-STD-020D)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350  350

< 2.5 235 220

 2.5 220 220

Table 9. Lead-free process (from J-STD-020D)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350 350 to 2000 > 2000

< 1.6 260 260 260

1.6 to 2.5 260 250 245

> 2.5 250 245 245

maxmmm peak temperature a MSL hymn damage \eve\ mmmum peak |emperamre = mwmmum soldenng |emperamre

Product data sheet Rev. 2 — 7 February 2014 26 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

For further information on temperature profiles, refer to Application Note AN10365

“Surface mount reflow soldering description”.

18. Abbreviations

MSL: Moisture Sensitivity Level

Fig 19. Temperature profiles for large and small components

001aac844

temperature

time

minimum peak temperature

= minimum soldering temperature

maximum peak temperature

= MSL limit, damage level

peak

temperature

Table 10. Abbreviations

Acronym Description

ADC Analog-to-Digital Converter

BLDC BrushLess DC

ECU Electronic Control Unit

EMC ElectroMagnetic Compatibility

EMI ElectroMagnetic Interference

EPS Electronic Power Steering

ESD ElectroStatic Discharge

IC Integrated Circuit

MR MagnetoResistive

PCB Printed-Circuit Board

PTAT Proportional To Absolute Temperature

RoHS Restriction of Hazardous Substances

TC Temperature Coefficient

Figure 15 Section 15.1

Product data sheet Rev. 2 — 7 February 2014 27 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

19. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

KMZ60 v.2 20140207 Product data sheet - KMZ60 v.1

Modifications: •Figure 15: update

•Section 15.1: update of tolerances

KMZ60 v.1 20111122 Product data sheet - -

Product data sheet Rev. 2 — 7 February 2014 28 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

20. Legal information

20.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

20.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

20.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless otherwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer's own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

: hitE:I/www.nxg.com salesaddresses®nx9£0m

Product data sheet Rev. 2 — 7 February 2014 29 of 30

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

20.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

21. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors KMZ60

Angle sensor with integrated amplifier

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 7 February 2014

Document identifier: KMZ60

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

22. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3

5 Functional description . . . . . . . . . . . . . . . . . . . 3

6 Internal circuitry. . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Recommended operating conditions. . . . . . . . 7

9 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Definitions of errors. . . . . . . . . . . . . . . . . . . . . 11

10.1 Reference position angle error . . . . . . . . . . . . 11

10.2 Output amplitude matching error . . . . . . . . . . 11

10.3 Output signal amplitude . . . . . . . . . . . . . . . . . 12

10.4 TC of output signal amplitude. . . . . . . . . . . . . 13

10.5 TC of output signal offset . . . . . . . . . . . . . . . . 14

10.6 Start-up angle error. . . . . . . . . . . . . . . . . . . . . 15

10.7 Phase error. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

10.8 Temperature behavior of pin VTEMP output. . 17

11 Electromagnetic compatibility . . . . . . . . . . . . 18

11.1 Emission (IEC 61967-4) . . . . . . . . . . . . . . . . . 18

11.2 Immunity (IEC 62132-4) . . . . . . . . . . . . . . . . . 18

12 ElectroStatic Discharge (ESD) . . . . . . . . . . . . 19

12.1 Human body model . . . . . . . . . . . . . . . . . . . . 19

12.2 Machine model . . . . . . . . . . . . . . . . . . . . . . . . 19

12.3 Charged-device model . . . . . . . . . . . . . . . . . . 19

12.4 Latch-up protection. . . . . . . . . . . . . . . . . . . . . 19

13 Application information. . . . . . . . . . . . . . . . . . 19

13.1 Connection to ECU. . . . . . . . . . . . . . . . . . . . . 19

13.2 EMI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.3 Power consumption . . . . . . . . . . . . . . . . . . . . 20

13.4 TC compensation . . . . . . . . . . . . . . . . . . . . . . 20

13.5 Offset of signal outputs on pin VOUT1 and

pin VOUT2 . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

13.6 Temperature reference output . . . . . . . . . . . . 21

13.7 Switching into Power-down mode. . . . . . . . . . 21

13.8 Circuit behavior in case of broken bond wires 21

13.9 Signal dependence on air-gap distance . . . . . 21

14 Test information. . . . . . . . . . . . . . . . . . . . . . . . 21

14.1 Quality information . . . . . . . . . . . . . . . . . . . . . 21

15 Package information . . . . . . . . . . . . . . . . . . . . 22

15.1 Sensor reference position. . . . . . . . . . . . . . . . 22

15.2 Note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

16 Package outline. . . . . . . . . . . . . . . . . . . . . . . . 23

17 Soldering of SMD packages. . . . . . . . . . . . . . 24

17.1 Introduction to soldering. . . . . . . . . . . . . . . . . 24

17.2 Wave and reflow soldering. . . . . . . . . . . . . . . 24

17.3 Wave soldering . . . . . . . . . . . . . . . . . . . . . . . 24

17.4 Reflow soldering . . . . . . . . . . . . . . . . . . . . . . 25

18 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 26

19 Revision history . . . . . . . . . . . . . . . . . . . . . . . 27

20 Legal information . . . . . . . . . . . . . . . . . . . . . . 28

20.1 Data sheet status. . . . . . . . . . . . . . . . . . . . . . 28

20.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

20.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . 28

20.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 29

21 Contact information . . . . . . . . . . . . . . . . . . . . 29

22 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

NXP USA Inc. 的 KMZ60 规格书

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