IXYS 的 IXXN110N65C4H1 规格书

© 2015 IXYS CORPORATION, All Rights Reserved
IXXN110N65C4H1 VCES = 650V
IC110 = 110A
VCE(sat) 


2.35V
tfi(typ) = 30ns
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 650 V
VCGR TJ = 25°C to 175°C, RGE = 1M 650 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 210 A
IC25 Terminal Current Limit 200 A
IC110 TC = 110°C 110 A
IF110 TC = 110°C 70 A
ICM TC = 25°C, 1ms 470 A
SSOA VGE = 15V, TVJ = 150°C, RG = 2 ICM = 220 A
(RBSOA) Clamped Inductive Load @VCE VCES
tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs
(SCSOA) RG = 82, Non Repetitive
PCTC = 25°C 750 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
VISOL 50/60Hz t = 1min 2500 V~
IISOL 1mA t = 1s 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/lb.in
Weight 30 g
DS100506C(01/15)
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 650 V
VGE(th) IC= 4mA, VCE = VGE 4.0 6.5 V
ICES VCE = VCES, VGE = 0V 50 A
TJ = 150C 3 mA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC= 110A, VGE = 15V, Note 1 1.98 2.35 V
TJ = 150C 2.34 V
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Anti-Parallel Sonic Diode
Optimized for 20-60kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
G
E
E
C
E153432
E
XPTTM 650V GenX4TM
w/ Sonic Diode
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXN110N65C4H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Reverse Sonic Diode (FRD)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 100A, VGE = 0V, Note 1 1.7 2.3 V
TJ = 150C 1.8 V
IRM 95 A
trr 100 ns
RthJC 0.42 C/W
IF = 100A, VGE = 0V, TJ = 150C
-diF/dt = 1500A/sVR = 300V
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 24 40 S
Cies 3690 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 440 pF
Cres 140 pF
Qg(on) 180 nC
Qge IC = 110A, VGE = 15V, VCE = 0.5 • VCES 32 nC
Qgc 76 nC
td(on) 35 ns
tri 46 ns
Eon 2.30 mJ
td(off) 143 ns
tfi 30 ns
Eoff 0.60 1.05 mJ
td(on) 30 ns
tri 32 ns
Eon 2.90 mJ
td(off) 130 ns
tfi 43 ns
Eoff 0.77 mJ
RthJC 0.20 °C/W
RthCS 0.05 °C/W
Inductive load, TJ = 150°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2
Note 2
Inductive load, TJ = 25°C
IC = 55A, VGE = 15V
VCE = 400V, RG = 2
Note 2
SOT-227B miniBLOC (IXXN)
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© 2015 IXYS CORPORATION, All Rights Reserved
IXXN110N65C4H1
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
14V
13V
12V
10V
9V
11V
7V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 2 4 6 8 10 12 14 16 18 20
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
14V
10V
11V
13V
12V
8V
9V
7V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
40
80
120
160
200
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
14V
13V
10V
8V
9V
7V
11V
12V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 110A
I
C
= 55A
I
C
= 220A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 220A
T
J
= 25ºC
110A
55A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
45678910
V
GE
- Volts
I
C -
Amperes
T
J
= - 40ºC
25ºC T
J
= 150ºC
5a 9.5- Swemens m 1 non Capam'ance A PmoFereds mo n name 29c 150"!) an me 120 \E » Amperes / In A Amperes VGE Avous 240 200 I60 as name 40 R5=20 dvfdx
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXN110N65C4H1
Fig. 7. Transconductance
0
10
20
30
40
50
60
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
240
100 150 200 250 300 350 400 450 500 550 600 650 700
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 2
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 325V
I
C
= 110A
I
G
= 10mA
Fig. 9. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
ane M James 14 -Nanoseconds 2n M an an a Re - Ohms 25 55 so 65 {SD 13L) n = 25‘s 15m: my 90 m 75 an as 9a 55 um ms Mn ‘5 >Amperes spuoaesouaN 1W"; uz 55 160 140 § § E g mm In - Nanoseconds 2n © 2015 IXYS CORPORATION, Au HIQMS Reserved
© 2015 IXYS CORPORATION, All Rights Reserved
IXXN110N65C4H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2 4 6 8 10 12 14
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 55A
I
C
= 110A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
2 4 6 8 101214
R
G
- Ohms
t
f i
- Nanoseconds
50
100
150
200
250
300
350
400
450
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC,
VGE
= 15V
V
CE
= 400V
I
C
= 110A
I
C
= 55A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.2
0.6
1.0
1.4
1.8
2.2
2.6
55 60 65 70 75 80 85 90 95 100 105 110
I
C
- Amperes
E
off
- MilliJoules
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2ΩV
GE
= 15V
V
CE
= 400V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
2.4
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2ΩV
GE
= 15V
V
CE
= 400V
I
C
= 55A
I
C
= 110A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
55 60 65 70 75 80 85 90 95 100 105 110
I
C
- Amperes
t
f i
- Nanoseconds
90
110
130
150
170
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC, 150ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
70
90
110
130
150
170
190
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 110A I
C
= 55A
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXN110N65C4H1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
10
30
50
70
90
110
130
55 60 65 70 75 80 85 90 95 100 105 110
I
C
- Amperes
t
r i
- Nanoseconds
25
30
35
40
45
50
55
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
26
30
34
38
42
46
50
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 400V
I
C
= 110A
I
C
= 55A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
2 4 6 8 10 12 14
R
G
- Ohms
t
r i
- Nanoseconds
10
20
30
40
50
60
70
80
90
100
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 400V
I
C
= 55A
I
C
= 110A
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© 2015 IXYS CORPORATION, All Rights Reserved
IXXN110N65C4H1
IXYS REF: IXX_110N65C4(E8) 01-30-13-A
Fig. 25. Typ. Recovery Energy E
rec
vs. -di
F
/dt
0
1
2
3
4
5
1000 1200 1400 1600 1800 2000
-diF/dt [A/µs]
Erec [mJ]
T
VJ
= 150ºC
V
R
= 300V
100A
50A
I
F
= 200A
Fig. 26. Maximum Transient Thermal Impedance ( Diode)
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width [s]
Z(th)JC - ºC / W
Fig. 21. Typ. Forward characteristics
0
25
50
75
100
125
150
175
200
00.511.522.53
VF - [V]
IF [A]
T
VJ
= 25ºC
T
VJ
= 150ºC
Fig. 22. Typ. Reverse Recovery Charge Q
rr
vs. -di
F
/dt
0
4
8
12
16
20
1000 1200 1400 1600 1800 2000
-diF/ dt [A/µs]
QRM [µC]
T
VJ
= 150ºC
V
R
= 300V
I
F
= 200A
100A
50A
Fig. 23. Typ. Peak Reverse Current I
RM
vs. -di
F
/dt
40
60
80
100
120
140
1000 1200 1400 1600 1800 2000
di
F
/dt [A/µs]
IRM [A]
T
VJ
= 150ºC
V
R
= 300V
50A
100A
I
F
= 200A
Fig. 24. Typ. Recovery Time t
rr
vs. -di
F
/dt
50
100
150
200
250
300
350
1000 1200 1400 1600 1800 2000
-diF/dt [A/µs]
t
rr
[ns]
T
VJ
= 150ºC
V
R
= 300V
50A
100A
I
F
= 200A