Microchip Technology 的 APTGL475U120DAG 规格书

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APTGL475U120DAG
APTGL475U120DAG – Rev 2 October, 2012
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CK
EK
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EC
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
Tc = 25°C 610
IC Continuous Collector Current Tc = 100°C 475
ICM Pulsed Collector Current Tc = 25°C 800
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation Tc = 25°C 2307 W
RBSOA Reverse Bias Safe Operating Area Tj = 150°C 800A @ 1150V
Application
Zero Current Switching resonant mode
Features
Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
Single switch
with Series diode
Trench + Field Stop IGBT4
VCES = 1200V
IC = 475A @ Tc = 100°C
OMicmsemll POWER PRODUCTS GROUP S ‘mlml Characteristic Test Cllmlitiflnx film TV film Unit 11 | s Vm Vu Vm um Vm Vu
APTGL475U120DAG
APTGL475U120DAG – Rev 2 October, 2012
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V ; VCE = 1200V 4 mA
Tj = 25°C 1.8 2.2
VCE(sat) Collector Emitter Saturation Voltage VGE =15V
IC = 400A Tj = 150°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE, IC = 10 mA 5 5.8 6.5 V
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 24.6
Coes Output Capacitance 1.62
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 1.38
nF
QG Gate charge VGE=±15V 3.4 µC
Td(on) Turn-on Delay Time 160
Tr Rise Time 30
Td(off) Turn-off Delay Time 340
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1.8 80
ns
Td(on) Turn-on Delay Time 170
Tr Rise Time 40
Td(off) Turn-off Delay Time 450
Tf Fall Time
Inductive Switching (150°C)
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1.8 170
ns
TJ = 25°C 20.8
Eon Turn-on Switching Energy TJ = 150°C 42 mJ
TJ = 25°C 22
Eoff Turn-off Switching Energy
VGE = ±15V
VCE = 600V
IC = 400A
RG = 1.8 TJ = 150°C 37.2 mJ
ISC Short circuit current VGE≤15V ; VCC=900V
tp≤10µs ; Tj=150°C 2000 A
Series diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Repetitive Reverse Voltage 1200 V
Tj = 25°C 400
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 2000
µA
IF DC Forward Current Tj = 90°C 360 A
IF = 360A 2.5 3
IF = 720A 3
VF Diode Forward Voltage
IF = 360A Tj = 125°C 1.8
V
Tj = 25°C 265
trr Reverse Recovery Time
Tj = 125°C 350
ns
Tj = 25°C 3.3
Qrr Reverse Recovery Charge
IF = 360A
VR = 800V
di/dt = 1200A/µs
Tj = 125°C 17.3
µC
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APTGL475U120DAG
APTGL475U120DAG – Rev 2 October, 2012
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.065
RthJC Junction to Case Thermal Resistance Series diode 0.13 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range -40 175
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To Heatsink M6 3 5
Torque Mounting torque For teminals M5 2 3.5 N.m
Wt Package Weight 300 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Typical IGBT Performance Curve
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
70
80
0 120 240 360 480 600
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=600V
D=50%
R
G
=1.8 Ω
T
J
=150°C
Tc=75°C
Oper ating Fre quency vs Collector Curr ent
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APTGL475U120DAG
APTGL475U120DAG – Rev 2 October, 2012
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Output Characteristics (VGE=15V)
T
J
=25°C
T
J
=150°C
0
200
400
600
800
01234
VCE (V)
IC (A)
Output Characteristics
V
GE
=15V
V
GE
=19V
V
GE
=9V
0
200
400
600
800
01234
VCE (V)
IC (A)
TJ = 150°C
Transfert Characteristics
T
J
=25°C
T
J
=150°C
0
200
400
600
800
5678910111213
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
0
20
40
60
80
100
120
140
160
0 200 400 600 800
IC (A)
E (mJ)
V
CE
= 600V
V
GE
= 15V
R
G
= 1.8 Ω
T
J
= 150°C
Eon
Eoff
20
30
40
50
60
70
80
0 2.5 5 7.5 10
Gate Resistance (ohms)
E (mJ)
V
CE
= 600V
V
GE
=15V
I
C
= 400A
T
J
= 150°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
160
320
480
640
800
960
0 300 600 900 1200 1500
VCE (V)
IC (A)
V
GE
=15V
T
J
=150°C
R
G
=1.8 Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
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APTGL475U120DAG
APTGL475U120DAG – Rev 2 October, 2012
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Typical Series diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.03
0.06
0.09
0.12
0.15
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
J
=25°C
T
J
=125°C
0
150
300
450
600
750
900
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
F
, Anode to Cathode Voltage (V)
I
F
, Forward Current (A)
Forward Current vs Forward Voltage Trr vs. Current Rate of Charge
180 A
360 A
720 A
0
100
200
300
400
0 1200 2400 3600 4800 6000 7200
-di
F
/dt (A/µs)
t
rr
, Reverse Recovery Time (ns)
T
J
=125°C
V
R
=800V
QRR vs. Current Rate Charge
180 A
360 A
720 A
0
6
12
18
24
30
36
42
0 1200 2400 3600 4800 6000 7200
-di
F
/dt (A/µs)
Q
RR
, Reverse Recovery Charge (µC)
T
J
=125°C
V
R
=800V
IRRM vs. Current Rate of Charge
180 A
360 A
720 A
0
60
120
180
240
300
0 1200 2400 3600 4800 6000 7200
-di
F
/dt (A/µs)
I
RRM
, Reverse Recovery Current (A)
T
J
=125°C
V
R
=800V
Capacitance vs. Reverse Voltage
0
600
1200
1800
2400
1 10 100 1000
V
R
, Reverse Voltage (V)
C, Capacitance (pF)
0
120
240
360
480
600
25 50 75 100 125 150 175
Case Temperature (ºC)
I
F
(AV) (A)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
T
J
=175°C
OMicrosemll POWER PRODUCTS GROUP DISCLAIMER Ln‘e Suppon Applicallon
APTGL475U120DAG
APTGL475U120DAG – Rev 2 October, 2012
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