NXP USA Inc. 的 KMZ49 规格书

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Figure2

1. Product profile

1.1 General description

The KMZ49 is a sensitive magnetic field sensor, employing the magnetoresistive effect of

thin-film permalloy. The sensor contains two galvanic separated Wheatstone bridges, at a

relative angle of 45 to each other.

A rotating magnetic field in the x-y plane will produce two independent sinusoidal output

signals, one a function of +cos(2) and the second a function of +sin(2),  being the

angle between sensor and field direction (see Figure 2). The KMZ49 is suited to high

precision angle measurement applications under low field conditions (saturation field

strength 25 kA/m).

The sensor can be operated at any frequency between 0 Hz and 1 MHz.

1.2 Features and benefits

Accurate and reliable angle measurement

Mechanical robustness, contactless principle

Wear-free operation

Accuracy independent of mechanical tolerances

Extended temperature range

1.3 Applications

KMZ49

Magnetic field sensor

Rev. 1 — 31 October 2011 Product data sheet

SO8

Steering angle and torsion Window wipers

Headlight adjustment Fuel level

Motor positioning Mirror positioning

Figure 2 Figure 2 Figure 2 BHHHH IHHHH

Product data sheet Rev. 1 — 31 October 2011 2 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

1.4 Quick reference data

[1] Applicable for bridge 1 and bridge 2.

[2] VM=VO(max) Voffset. Periodicity of VM: sin(2) and cos(2), respectively.

[3]

[4] Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6.

2. Pinning information

3. Ordering information

Table 1. Quick reference data

Tamb =25



C; Hext =25kA/m; V

CC = 5 V; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage [1] -59V

VMpeak voltage see Figure 2 [1][2] 60 67 75 mV

Voffset offset voltage per supply voltage;

see Figure 2

[1] 2- +2mV/V

TCV(offset) offset voltage

temperature

coefficient

per supply voltage;

Tamb =40 C to +150 C;

see Figure 2

[1][3] 2- +2(V/V)/K

Rbridge bridge resistance [1][4] 2.73.23.7k

TCV offset

Voffset at 150 CVoffset at 40– C–

150 C40– C–

--------------------------------------------------------------------------------------------------

Table 2. Pinning

Pin Symbol Description Simplified outline

1 ON1 output voltage bridge 1

2 ON2 output voltage bridge 2

CC2 supply voltage bridge 2

CC1 supply voltage bridge 1

5 OP1 output voltage bridge 1

6 OP2 output voltage bridge 2

7 GND2 ground 2

8 GND1 ground 1

Table 3. Ordering information

Type number Package

Name Description Version

KMZ49 SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

wick

Product data sheet Rev. 1 — 31 October 2011 3 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

4. Circuit diagram

5. Limiting values

[1] Applicable for bridge 1 and bridge 2.

6. Thermal characteristics

Fig 1. Device and test circuit diagram

008aaa267

VCC1

VCC1 VOP1

VO1

VON1 VOP2

VO2

VON2 VCC2

OP1 GND1 ON1

cos

R12

R14R13

R11

bridge 1

KMZ49

VCC2

OP2 GND2 ON2

sin

R22

R24R23

R21

bridge 2

V V V V

V V

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage [1] -9V

Hext external magnetic field strength 25 - kA/m

Tamb ambient temperature 40 +150 C

Tstg storage temperature 65 +150 C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-a) thermal resistance from junction to ambient 155 K/W

Figure 2 Figure 2 Figure 2 Figure 3

Product data sheet Rev. 1 — 31 October 2011 4 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

7. Characteristics

[1] Applicable for bridge 1 and bridge 2.

[2] VM=VO(max) Voffset. Periodicity of VM: sin(2) and cos(2), respectively.

[3]

[4] Bridge resistance between pin 4 to pin 8, pin 3 to pin 7, pin 1 to pin 5 and pin 2 to pin 6.

[5]

[6]

[7]

[8]

[9]

[10] ; Voffset = 0 V; inaccuracy of angular measurement due to deviations from ideal sinusoidal characteristics,

calculated from the third and fifth harmonics of the spectrum VO. For definition of  see Figure 2.

Table 6. Characteristics

Tamb =25



C; Hext =25kA/m; V

CC = 5 V; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage [1] -59V

VMpeak voltage see Figure 2 [1][2] 60 67 75 mV

TCVM peak voltage temperature

coefficient Tamb =40 C to +150 C[1][3] 0.3 0.36 0.42 %/K

Rbridge bridge resistance [1][4] 2.7 3.2 3.7 k

TCR(bridge) bridge resistance

temperature coefficient Tamb =40 C to +150 C[1][5] 0.24 0.26 0.29 %/K

Voffset offset voltage per supply voltage;

see Figure 2

[1] 2- +2mV/V

TCV(offset) offset voltage temperature

coefficient per supply voltage;

Tamb =40 C to +150 C;

see Figure 2

[1][6] 2- +2(V/V)/K

Vo(hys) hysteresis output voltage see Figure 3 [1][7] 0 0.050.18%FS

k amplitude synchronism [8] 99.5 100 100.5 %

TCkamplitude synchronism

temperature coefficient Tamb =40 C to +150 C[9] 0.01 0 +0.01 %/K

 angular inaccuracy [10] 0 0.05 0.1 deg

TCVM

VMat 150 CVMat 40– C–

VMat 25 C150 C40– C–

---------------------------------------------------------------------------------------------

TCRbridge

Rbridge at 150 CRbridge at 40– C–

Rbridge at 25 C150 C40– C–

-------------------------------------------------------------------------------------------------------

TCV offset

Voffset at 150 CVoffset at 40– C–

150 C40– C–

--------------------------------------------------------------------------------------------------

Vohys1VO1 67.513545VO1 67.545135–



---------------------------------------------------------------------------------------------------------------------------

Vohys2VO2 22.5900 VO2 22.5090–



---------------------------------------------------------------------------------------------------------------

kVM1

VM2

----------

TCkkat 150 Ckat 40– C–

kat 25 C150 C40– C–

----------------------------------------------------------------------------------------

 real meas

–=

><\ \/="" v01="">

Product data sheet Rev. 1 — 31 October 2011 5 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

Fig 2. Output signals related to the direction of the magnetic field

Fig 3. Definition of hysteresis

ON1

ON2

CC2

CC1

GND1

direction of

magnetic field

α = 0°

GND2

OP2

OP1

(mV)

offset2

90 180 360

270

α (deg)

008aaa269

008aaa266

α (deg)

0 1359045

(mV) Vo(hys)2

VO1 VO2

Vo(hys)1

Product data sheet Rev. 1 — 31 October 2011 6 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

8. ElectroStatic Discharge (ESD)

8.1 Human body model

The KMZ49 withstands 1 kV, according to the human body model at 100 pF and 1.5 k.

The test is according to AEC-Q101, method 001.

9. Test information

9.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

EPQ

Product data sheet Rev. 1 — 31 October 2011 7 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

10. Package outline

Fig 4. Package outline SOT96-1 (SO8)

UNIT A

max. A1A2A3bpcD

(1) E(2) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

inches

1.75 0.25

0.10 1.45

1.25 0.25 0.49

0.36 0.25

0.19 5.0

4.8 4.0

3.8 1.27 6.2

5.8 1.05 0.7

0.6 0.7

0.3 8

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

1.0

0.4

SOT96-1

detail X

vMA

(A )

pin 1 index

076E03 MS-012

0.069 0.010

0.004 0.057

0.049 0.01 0.019

0.014 0.0100

0.0075 0.20

0.19 0.16

0.15 0.05 0.244

0.228 0.028

0.024 0.028

0.012

0.010.010.041 0.004

0.039

0.016

0 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

99-12-27

03-02-18

Product data sheet Rev. 1 — 31 October 2011 8 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

11. Soldering of SMD packages

This text provides a very brief insight into a complex technology. A more in-depth account

of soldering ICs can be found in Application Note AN10365 “Surface mount reflow

soldering description”.

11.1 Introduction to soldering

Soldering is one of the most common methods through which packages are attached to

Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both

the mechanical and the electrical connection. There is no single soldering method that is

ideal for all IC packages. Wave soldering is often preferred when through-hole and

Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not

suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high

densities that come with increased miniaturization.

11.2 Wave and reflow soldering

Wave soldering is a joining technology in which the joints are made by solder coming from

a standing wave of liquid solder. The wave soldering process is suitable for the following:

•Through-hole components

•Leaded or leadless SMDs, which are glued to the surface of the printed circuit board

Not all SMDs can be wave soldered. Packages with solder balls, and some leadless

packages which have solder lands underneath the body, cannot be wave soldered. Also,

leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,

due to an increased probability of bridging.

The reflow soldering process involves applying solder paste to a board, followed by

component placement and exposure to a temperature profile. Leaded packages,

packages with solder balls, and leadless packages are all reflow solderable.

Key characteristics in both wave and reflow soldering are:

•Board specifications, including the board finish, solder masks and vias

•Package footprints, including solder thieves and orientation

•The moisture sensitivity level of the packages

•Package placement

•Inspection and repair

•Lead-free soldering versus SnPb soldering

11.3 Wave soldering

Key characteristics in wave soldering are:

•Process issues, such as application of adhesive and flux, clinching of leads, board

transport, the solder wave parameters, and the time during which components are

exposed to the wave

•Solder bath specifications, including temperature and impurities

Figure 5 Table 7 § Figure 5

Product data sheet Rev. 1 — 31 October 2011 9 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

11.4 Reflow soldering

Key characteristics in reflow soldering are:

•Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to

higher minimum peak temperatures (see Figure 5) than a SnPb process, thus

reducing the process window

•Solder paste printing issues including smearing, release, and adjusting the process

window for a mix of large and small components on one board

•Reflow temperature profile; this profile includes preheat, reflow (in which the board is

heated to the peak temperature) and cooling down. It is imperative that the peak

temperature is high enough for the solder to make reliable solder joints (a solder paste

characteristic). In addition, the peak temperature must be low enough that the

packages and/or boards are not damaged. The peak temperature of the package

depends on package thickness and volume and is classified in accordance with

Table 7 and 8

Moisture sensitivity precautions, as indicated on the packing, must be respected at all

times.

Studies have shown that small packages reach higher temperatures during reflow

soldering, see Figure 5.

Table 7. SnPb eutectic process (from J-STD-020C)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350  350

< 2.5 235 220

 2.5 220 220

Table 8. Lead-free process (from J-STD-020C)

Package thickness (mm) Package reflow temperature (C)

Volume (mm3)

< 350 350 to 2000 > 2000

< 1.6 260 260 260

1.6 to 2.5 260 250 245

> 2.5 250 245 245

maxmum peak temperature = MSL Imm damage \evel mwmmum peak lempevature = mwmum so‘dermg lempevature

Product data sheet Rev. 1 — 31 October 2011 10 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

For further information on temperature profiles, refer to Application Note AN10365

“Surface mount reflow soldering description”.

12. Revision history

MSL: Moisture Sensitivity Level

Fig 5. Temperature profiles for large and small components

001aac844

temperature

time

minimum peak temperature

= minimum soldering temperature

maximum peak temperature

= MSL limit, damage level

peak

temperature

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

KMZ49 v.1 20111031 Product data sheet - -

Product data sheet Rev. 1 — 31 October 2011 11 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use in automotive applications — This NXP

Semiconductors product has been qualified for use in automotive

applications. Unless otherwise agreed in writing, the product is not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer's own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

hngzllwwwmewm salesaddresses®nx9.com

Product data sheet Rev. 1 — 31 October 2011 12 of 13

NXP Semiconductors KMZ49

Magnetic field sensor

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors KMZ49

Magnetic field sensor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 31 October 2011

Document identifier: KMZ49

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 ElectroStatic Discharge (ESD) . . . . . . . . . . . . . 6

8.1 Human body model . . . . . . . . . . . . . . . . . . . . . 6

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

9.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering of SMD packages . . . . . . . . . . . . . . . 8

11.1 Introduction to soldering . . . . . . . . . . . . . . . . . . 8

11.2 Wave and reflow soldering . . . . . . . . . . . . . . . . 8

11.3 Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . . 8

11.4 Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

NXP USA Inc. 的 KMZ49 规格书

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