Texas Instruments 的 DRV8836 规格书

V'.‘ TEXAS INSTRUMENTS X
PWM
nSLEEP
2 V to 7 V
Controller
M
+ ±
+ ±
DRV8836
Stepper or
Brushed DC
Motor Driver
1.5 A
1.5 A
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intellectual property matters and other important disclaimers. PRODUCTION DATA.
DRV8836
SLVSB17D –MARCH 2012–REVISED APRIL 2016
DRV8836 Dual Low-Voltage H-Bridge IC
1
1 Features
1• Dual-H-Bridge Motor Driver
– Capable of Driving Two DC Motors or One
Stepper Motor
– Low MOSFET On-Resistance:
HS + LS 305 mΩ
• 1.5-A Maximum Drive Current Per H-Bridge
• Configure Bridges Parallel for 3-A Drive Current
• 2-V to 7-V Operating Supply Voltage
• Flexible PWM or PHASE/ENABLE Interface
• Low-Power Sleep Mode With 95-nA Maximum
Supply Current
• Dedicated nSLEEP Input Pin
• Tiny 2.00-mm × 3.00-mm WSON Package
2 Applications
• Battery-Powered:
– DSLR Lenses
– Consumer Products
– Toys
– Robotics
– Cameras
– Medical Devices
3 Description
The DRV8836 provides an integrated motor driver
solution for cameras, consumer products, toys, and
other low-voltage or battery-powered motion control
applications. The device has two H-bridge drivers,
and can drive two DC motors or one stepper motor,
as well as other devices like solenoids. The output
driver block for each consists of N-channel power
MOSFET configured as an H-bridge to drive the
motor winding. An internal charge pump generates
gate drive voltages.
The DRV8836 supplies up to 1.5-A of output current
per H-bridge. It operates on a power supply voltage
from 2 V to 7 V.
PHASE/ENABLE and IN/IN interfaces can be
selected which are compatible with industry-standard
devices. A low-power sleep mode is provided which
turns off all unnecessary logic to provide a very low
current state.
Internal shutdown functions are provided for
overcurrent protection, short-circuit protection,
undervoltage lockout, and overtemperature.
The DRV8836 is packaged in a tiny 12-pin WSON
package (Eco-friendly: RoHS and no Sb/Br).
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
DRV8836 WSON (12) 2.00 mm x 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Schematic
l TEXAS INSTRUMENTS
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DRV8836
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Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Pin Configuration and Functions......................... 3
6 Specifications......................................................... 4
6.1 Absolute Maximum Ratings ...................................... 4
6.2 ESD Ratings.............................................................. 4
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 5
6.6 Timing Requirements................................................ 6
6.7 Typical Characteristics.............................................. 7
7 Detailed Description.............................................. 8
7.1 Overview ................................................................... 8
7.2 Functional Block Diagram......................................... 8
7.3 Feature Description................................................... 9
7.4 Device Functional Modes.......................................... 9
8 Application and Implementation ........................ 11
8.1 Application Information............................................ 11
8.2 Typical Application ................................................. 11
9 Power Supply Recommendations...................... 13
9.1 Bulk Capacitance .................................................... 13
10 Layout................................................................... 13
10.1 Layout Guidelines ................................................. 13
10.2 Layout Example .................................................... 14
10.3 Thermal Considerations........................................ 14
11 Device and Documentation Support ................. 16
11.1 Documentation Support ........................................ 16
11.2 Community Resources.......................................... 16
11.3 Trademarks........................................................... 16
11.4 Electrostatic Discharge Caution............................ 16
11.5 Glossary................................................................ 16
12 Mechanical, Packaging, and Orderable
Information ........................................................... 16
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (December 2015) to Revision D Page
• Deleted nFAULT from the Simplified Schematic in the Description section ......................................................................... 1
Changes from Revision B (January 2014) to Revision C Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes,Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section.................................................................................................. 1
Changes from Revision A (September 2013) to Revision B Page
• Added tOCR and tDEAD parameters to Electrical Characteristics .............................................................................................. 5
l TEXAS INSTRUMENTS
1
2
3
4
12
11
10
9
GND
Thermal
Pad
5 8
6 7
VCC
AOUT1
AOUT2
BOUT1
BOUT2
GND
nSLEEP
MODE
AIN1 / APHASE
AIN2 / AENBL
BIN1 / BPHASE
BIN2 / BENBL
3
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(1) Directions: I = input, O = output, OZ = tri-state output, OD = open-drain output, IO = input/output.
5 Pin Configuration and Functions
DSS Package
12-Pin WSON
Top View
Pin Functions
PIN I/O(1) DESCRIPTION EXTERNAL COMPONENTS
OR CONNECTIONS
NAME NO.
POWER AND GROUND
GND, Thermal
pad 6 — Device ground
VCC 1 — Device and motor supply Bypass to GND with a 0.1-μF (minimum)
ceramic capacitor
CONTROL
AIN1/APHASE 10 I Bridge A input 1/PHASE input IN/IN mode: Logic high sets AOUT1 high
PH/EN mode: Sets direction of H-bridge A
Internal pulldown resistor
AIN2/AENBL 9 I Bridge A input 2/ENABLE input IN/IN mode: Logic high sets AOUT2 high
PH/EN mode: Logic high enables H-bridge A
Internal pulldown resistor
BIN1/BPHASE 8 I Bridge B input 1/PHASE input IN/IN mode: Logic high sets BOUT1 high
PH/EN mode: Sets direction of H-bridge B
Internal pulldown resistor
BIN2/BENBL 7 I Bridge B input 2/ENABLE input IN/IN mode: Logic high sets BOUT2 high
PH/EN mode: Logic high enables H-bridge B
Internal pulldown resistor
MODE 11 I Input mode select Logic low selects IN/IN mode
Logic high selects PH/EN mode
Internal pulldown resistor
nSLEEP 12 I Sleep input Active low places part in low-power sleep state
Internal pulldown resistor
OUTPUT
AOUT1 2 O Bridge A output 1 Connect to motor winding A
AOUT2 3 O Bridge A output 2
BOUT1 4 O Bridge B output 1 Connect to motor winding B
BOUT2 5 O Bridge B output 2
l TEXAS INSTRUMENTS
4
DRV8836
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(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values pertain to network ground terminal.
(3) Power dissipation and thermal limits must be observed.
6 Specifications
6.1 Absolute Maximum Ratings(1)(2)
MIN MAX UNIT
Power supply voltage, VCC –0.3 7 V
Digital input pin voltage –0.5 VCC + 0.5 V
Peak motor drive output current Internally limited A
Continuous motor drive output current per H-bridge(3) –1.5 1.5 A
TJOperating junction temperature –40 150 °C
Tstg Storage temperature –60 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2) ±1500
(1) Power dissipation and thermal limits must be observed.
6.3 Recommended Operating Conditions
TA= 25°C (unless otherwise noted)
MIN MAX UNIT
VCC Device power supply voltage 2 7 V
VIN Logic level input voltage 0 VCC V
IOUT H-bridge output current(1) 0 1.5 A
fPWM Externally applied PWM frequency 0 250 kHz
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
DRV8836
UNITDSS (WSON)
12 PINS
RθJA Junction-to-ambient thermal resistance 50.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 58 °C/W
RθJB Junction-to-board thermal resistance 19.9 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 20 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.9 °C/W
l TEXAS INSTRUMENTS
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6.5 Electrical Characteristics
TA= 25°C, VCC = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
IVCC VCC operating supply current fPWM = 50 kHz, no load 1.7 2.5 mA
ICCQ VCC sleep mode supply current nSLEEP = 0 V, all inputs 0 V 40 95 nA
VCC = 3 V, nSLEEP = 0 V, all inputs 0 V 10
VUVLO VCC undervoltage lockout
voltage
VCC rising 2 V
VCC falling 1.9
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.25 ×s
VCC V
VIH Input high voltage 0.5 × VCC V
IIL Input low current VIN = 0 –5 5 μA
IIH Input high current VIN = 3.3 V 50 μA
RPD Pulldown resistance 100 kΩ
H-BRIDGE FETS
RDS(ON) HS + LS FET on resistance VCC = 3 V, I O= 800 mA, TJ= 25°C 370 420 mΩ
VCC = 5 V, IO= 800 mA, TJ= 25°C 305 355
IOFF OFF-state leakage current ±200 nA
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 1.6 3.5 A
tDEG Overcurrent deglitch time 1 µs
tOCR Overcurrent protection retry time 1 ms
tDEAD Output dead time 100 ns
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C
l TEXAS INSTRUMENTS
1
xPHASE
xOUT1
xENBL
2
5
6
3
4
xOUT2
PHASE/ENBL mode
56
z
z
z
IN2
OUT1
7
10
IN/IN mode
11 12
80%
20%
80%
20%
OUTx
OUT2
IN1
z
8
9
6
DRV8836
SLVSB17D –MARCH 2012–REVISED APRIL 2016
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(1) Not production tested – ensured by design
6.6 Timing Requirements(1)
TA= 25°C, VCC = 5 V, RL= 20 Ω
NO. MIN MAX UNIT
1 t1Delay time, xPHASE high to xOUT1 low 210 ns
2 t2Delay time, xPHASE high to xOUT2 high 150 ns
3 t3Delay time, xPHASE low to xOUT1 high 150 ns
4 t4Delay time, xPHASE low to xOUT2 low 210 ns
5 t5Delay time, xENBL high to xOUTx high 150 ns
6 t6Delay time, xENBL high to xOUTx low 150 ns
7 t7Output enable time 210 ns
8 t8Output disable time 210 ns
9 t9Delay time, xINx high to xOUTx high 125 ns
10 t10 Delay time, xINx low to xOUTx low 125 ns
11 tROutput rise time 20 188 ns
12 tFOutput fall time 8 30 ns
Figure 1. Timing Requirements
l TEXAS INSTRUMENTS 900 055
VVCC (V)
IVCC (PA)
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
D003
-40qC
25qC
85qC
Temperature (qC)
IVCC (mA)
-40 -20 0 20 40 60 80 100
1
1.2
1.4
1.6
1.8
2
2.2
2.4
D001
VCC = 2
VCC = 5
VCC = 7
7
DRV8836
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6.7 Typical Characteristics
Figure 2. RDS(ON) (HS + LS) Figure 3. VCC Operating Current, fPWM = 50 kHz, No Load
Figure 4. VCC Sleep Current
l TEXAS INSTRUMENTS F0350 jeou‘m O jBouTz w ”T $ 'fi fi
Over-
Temp
AOUT1
AOUT2
GND
MODE
AIN1/APHASE
AIN2/AENBL
VCC
VCC
VCC
2.0 to 7V
Gate
Drive
Logic
Osc
OCP
VCC
Gate
Drive
OCP
BOUT1
BOUT2
VCC
Gate
Drive
OCP
VCC
Gate
Drive OCP
BIN1/BPHASE
BIN2/BENBL
Step
Motor
Drives 2x DC motor
or 1x Stepper
DCM
DCM
nSLEEP
Charge
Pump
Copyright © 2016, Texas Instruments Incorporated
8
DRV8836
SLVSB17D –MARCH 2012–REVISED APRIL 2016
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7 Detailed Description
7.1 Overview
The DRV8836 is an integrated motor driver solution used for brushed motor control. The device integrates two
H-bridges, and can drive two DC motor or one stepper motor. The output driver block for each H-bridge consists
of N-channel power MOSFETs. An internal charge pump generates the gate drive voltages. Protection features
include overcurrent protection, short-circuit protection, undervoltage lockout, and overtemperature protection.
The bridges connect in parallel for additional current capability.
The mode pin allows selection of either a PHASE/ENABLE or IN/IN interface.
7.2 Functional Block Diagram
l TEXAS INSTRUMENTS
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7.3 Feature Description
7.3.1 Sleep Mode
If the nSLEEP pin enters a logic-low state, the DRV8836 enters a low-power sleep mode. In this state all
unnecessary internal circuitry is powered down.
7.3.2 Power Supplies and Input Pins
There is a weak pulldown resistor (approximately 100 kΩ) to ground on the input pins.
7.3.3 Protection Circuits
The DRV8836 is fully protected against undervoltage, overcurrent, and overtemperature events.
7.3.3.1 Overcurrent Protection (OCP)
An analog current limit circuit on each FET limits the current through the FET by removing the gate drive. If this
analog current limit persists for longer than the OCP time, all FETs in the H-bridge disable. After approximately
1 ms, the bridge re-enables automatically.
Overcurrent conditions on both high and low side devices, like a short to ground, supply, or across the motor
winding results in an overcurrent shutdown.
7.3.3.2 Thermal Shutdown (TSD)
If the die temperature exceeds safe limits, all FETs in the H-bridge disable. Once the die temperature has fallen
to a safe level operation automatically resumes.
7.3.3.3 Undervoltage Lockout (UVLO)
If at any time the voltage on the VCC pins falls below the undervoltage lockout threshold voltage, all circuitry in
the device disables, and internal logic resets. Operation resumes when VCC rises above the UVLO threshold.
Table 1. Device Protection
FAULT CONDITION ERROR REPORT H-BRIDGE INTERNAL
CIRCUITS RECOVERY
VCC undervoltage
(UVLO) VCC < VUVLO None Disabled Disabled VCC > VUVLO
Overcurrent (OCP) IOUT > IOCP None Disabled Operating tOCR
Thermal shutdown
(TSD) TJ > TTSD None Disabled Operating TJ < TTSD – THYS
7.4 Device Functional Modes
The DRV8836 is active when the nSLEEP pin is set to a logic high. When in sleep mode, the H-bridge FETs
disable (Hi-Z).
Table 2. Device Operating Modes
OPERATING MODE CONDITION H-BRIDGE INTERNAL CIRCUITS
Operating nSLEEP high Operating Operating
Sleep mode nSLEEP low Disabled Disabled
Fault encountered Any fault condition met Disabled See Table 1
l TEXAS INSTRUMENTS
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7.4.1 Bridge Control
Two control modes are available in the DRV8836: IN/IN mode and PHASE/ENABLE mode. IN/IN mode is
selected if the MODE pin is driven low or left unconnected; PHASE/ENABLE mode is selected if the MODE pin is
driven to logic high. The following tables show the logic for these modes.
Table 3. IN/IN Mode
MODE xIN1 xIN2 xOUT1 xOUT2 FUNCTION
(DC MOTOR)
0 0 0 Z Z Coast
0 0 1 L H Reverse
0 1 0 H L Forward
0 1 1 L L Brake
Table 4. PHASE/ENABLE Mode
MODE xENABLE xPHASE xOUT1 xOUT2 FUNCTION
(DC MOTOR)
1 0 X L L Brake
1 1 1 L H Reverse
1 1 0 H L Forward
l TEXAS INSTRUMENTS
10 µF
M
VCC
1
6
PP
2
3
4
5
10
9
8
7
11
AIN1/APHASE
AIN2/AENBL
BIN1/BPHASE
BIN2/BENBL
MODE
AOUT1
AOUT2
BOUT1
BOUT2
VCC
GND
GNDP
IN1/PHASE
IN2/DIR
LOW = IN/IN; HIGH = PHASE/ENBL
From Controller
Copyright © 2016, Texas Instruments Incorporated
12 nSLEEP
LOW = SLEEP; HIGH = RUN
11
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8 Application and Implementation
NOTE
The information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV8836 is used in one or two motor control applications. When configured in parallel, the DRV8836
provides double the current to one motor.
8.2 Typical Application
The two H-bridges in the DRV8836 can be connected in parallel for double the current of a single H-bridge.
Figure 5 shows the connections.
The following design is a common application of the DRV8836.
Figure 5. Parallel Mode Connections
8.2.1 Design Requirements
The design requirements are shown in Table 5.
Table 5. Design Requirements
DESIGN PARAMETER REFERENCE EXAMPLE VALUE
Motor voltage VCC 4 V
Motor RMS current IRMS 0.3 A
Motor startup current ISTART 0.6 A
Motor current trip point ILIMIT 0.5 A
l TEXAS INSTRUMENTS ‘ ‘ ‘ ‘ ‘ ‘ ‘ ‘ mm Msnnm [hfznsm 1D.nm:/div1nn.okS/s 1Dflys/pl mm m, m SInpp-d Smgl. S-q 1 1 m. RL mk Am o:mh-n2.2n15 19:55 nu
12
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8.2.2 Detailed Design Procedure
The following design procedure can be used to configure the DRV8836 in a brushed motor application.
8.2.2.1 Motor Voltage
The appropriate motor voltage depends on the ratings of the motor selected and the desired RPM. A higher
voltage spins a brushed DC motor faster with the same PWM duty cycle applied to the power FETs. A higher
voltage also increases the rate of current change through the inductive motor windings.
8.2.2.2 Low-Power Operation
When entering sleep mode, TI recommends setting all inputs as a logic low to minimize system power.
8.2.3 Application Curve
The following scope captures motor startup as VCC ramps from 0 V to 6 V. Channel 1 is VCC, and Channel 4 is
the motor current of an unloaded motor during startup. The motor used is a NMB Technologies Corporation
OOB7PA12C, PPN7PA12C1. As VCC ramps the current in the motor increases until the motor speed builds up.
The motor current then reduces for normal operation.
Inputs are set as follows:
• Mode: IN/IN
• AIN1: High
• AIN2: Low
Figure 6. Motor Startup With No Load
‘5‘ TEXAS INSTRUMENTS O
Parasitic Wire
Inductance
+
±
Motor Driver
Power Supply Motor Drive System
VM
GND
+
Local
Bulk Capacitor IC Bypass
Capacitor
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13
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9 Power Supply Recommendations
9.1 Bulk Capacitance
The appropriate local bulk capacitance is an important factor in motor drive system design. More bulk
capacitance is generally beneficial but may increase costs and physical size.
The amount of local capacitance needed depends on a variety of factors, including:
• The highest current required by the motor system
• The power supply’s capacitance and ability to source current
• The amount of parasitic inductance between the power supply and motor system
• The acceptable voltage ripple
• The type of motor used (brushed DC, brushless DC, stepper)
• The motor braking method
The inductance between the power supply and motor drive system limits the rate current changes from the power
supply. If the local bulk capacitance is too small, the system responds to excessive current demands or dumps
from the motor with a change in voltage. When adequate bulk capacitance is used, the motor voltage remains
stable and high current can be quickly supplied.
The datasheet provides a recommended value, but system-level testing is required to determine the appropriate
sized bulk capacitor.
Figure 7. Bulk Capacitor
10 Layout
10.1 Layout Guidelines
The VCC pin should be bypassed to GND using low-ESR ceramic bypass capacitors with a recommended value
of 0.1-μF rated for VCC. This capacitor should be placed as close to the VCC pin as possible with a thick trace
or ground plane connection to the device GND pin.
The VCC pin must bypass to ground using an appropriate bulk capacitor. This component may be an electrolytic
and should be located close to the DRV8836.
l TEXAS INSTRUMENTS OO 00 OO 00 mp HHH
VCC
AOUT1
AOUT2
BOUT1
BOUT2
GND
nSLEEP
MODE
AIN1/APHASE
AIN2/AENBL
BIN1/BPHASE
10 µF
BIN2/BENBL
14
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10.2 Layout Example
Figure 8. Layout Recommendation
10.3 Thermal Considerations
The DRV8836 has thermal shutdown (TSD) as described in Thermal Shutdown (TSD). If the die temperature
exceeds approximately 150°C, the device disables until the temperature drops to a safe level.
Any tendency of the device to enter thermal shutdown is an indication of either excessive power dissipation,
insufficient heatsinking, or an ambient temperature that is too high.
10.3.1 Power Dissipation
The power dissipated in the output FET resistance or RDS(on) dominates the power dissipation in the DRV8836.
The average power dissipation when running both H-bridges can be roughly estimated by Equation 1:
PTOT = 2 × RDS(ON) × (IOUT(RMS))2
where
• PTOT is the total power dissipation, RDS(ON) is the resistance of the HS plus LS FETs, and IOUT(RMS) is the RMS
output current being applied to each winding. IOUT(RMS) is equal to approximately 0.7× the full-scale output
current setting. The factor of 2 comes from the fact that there are two H-bridges. (1)
The maximum amount of power dissipated in the device is dependent on ambient temperature and heatsinking.
l TEXAS INSTRUMENTS
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Thermal Considerations (continued)
NOTE
RDS(ON) increases with temperature. As the device heats, the power dissipation increases.
This must be taken into consideration when sizing the heatsink.
10.3.2 Heatsinking
The PowerPAD™ package uses an exposed pad to remove heat from the device. For proper operation, this pad
must be thermally connected to copper on the PCB to dissipate heat. On a multi-layer PCB with a ground plane,
this can be accomplished by adding a number of vias to connect the thermal pad to the ground plane. On PCBs
without internal planes, copper area can be added on either side of the PCB to dissipate heat. If the copper area
is on the opposite side of the PCB from the device, thermal vias are used to transfer the heat between top and
bottom layers.
For more information on PCB design, refer to TI application report SLMA002,PowerPAD™ Thermally Enhanced
Package, and TI application brief SLMA004,PowerPAD™ Made Easy, available at www.ti.com.
In general, the more copper area that can be provided, the more power can be dissipated.
l TEXAS INSTRUMENTS Am
16
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation see the following:
•Calculating Motor Driver Power Dissipation,SLVA504
•DRV8835/DRV8836 Evaluation Module,SLVU694
•Understanding Motor Driver Current Ratings,SLVA505
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
PowerPAD, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
I TEXAS INSTRUMENTS Samples
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
DRV8836DSSR ACTIVE WSON DSS 12 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 836
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
I TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “KO '«PT» Reel Diame|er AD Dimension des‘gned to accommodate the componem wwdlh E0 Dimension damned to eccemmodam the component \ength KO Dimenslun desgned to accommodate the componem thickness 7 w Overen with loe earner cape i p1 Pitch between successwe cavuy eemers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE O O O D O O D O Sprockemoles ,,,,,,,,,,, ‘ User Direcllon 0' Feed Pocket Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
DRV8836DSSR WSON DSS 12 3000 180.0 8.4 2.25 3.25 1.05 4.0 8.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2018
Pack Materials-Page 1
I TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DRV8836DSSR WSON DSS 12 3000 210.0 185.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2018
Pack Materials-Page 2
GENERIC PACKAGE VIEW D33 12 WSON - 0.8 mm max heigm PLASTIC SMALL OUTLINE , N0 LEAD Images above are jusl a represenlalion of the package family, aclual package may vary Refel lo the product dala sheel for package details. 4209244/D I TEXAS INSTRI IMFNTS
% DSSOO12A A61 5(5) 1U 5@ hams lermmEN'rs
www.ti.com
PACKAGE OUTLINE
C
12X 0.3
0.2
2±0.1
12X 0.35
0.25
2X
2.5
0.9±0.1
10X 0.5
0.8 MAX
0.05
0.00
B2.1
1.9
A
3.1
2.9
0.35
0.25
0.3
0.2
(0.2) TYP
4X (0.2)
(0.7)
WSON - 0.8 mm max heightDSS0012A
PLASTIC SMALL OUTLINE - NO LEAD
4222684/A 02/2016
PIN 1 INDEX AREA
SEATING PLANE
0.08 C
1
67
12
(OPTIONAL)
PIN 1 ID 0.1 C A B
0.05 C
THERMAL PAD
EXPOSED
13
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
SEE TERMINAL
DETAIL
SCALE 5.000
DETAIL
OPTIONAL TERMINAL
TYPICAL
DSSOO12A (¢
www.ti.com
EXAMPLE BOARD LAYOUT
(0.75)
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
(0.9)
10X (0.5)
(1.9)
12X (0.25)
12X (0.5)
(2)
(R ) TYP0.05
( ) VIA TYP
NOTE 5
0.2
WSON - 0.8 mm max heightDSS0012A
PLASTIC SMALL OUTLINE - NO LEAD
4222684/A 02/2016
SYMM
1
67
12
SYMM
LAND PATTERN EXAMPLE
SCALE:20X
13
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.
It is recommended that vias located under solder paste be filled, plugged or tented.
SOLDER MASK
OPENING
SOLDER MASK
METAL UNDER
SOLDER MASK
DEFINED
METAL
SOLDER MASK
OPENING
SOLDER MASK DETAILS
NON SOLDER MASK
DEFINED
(PREFERRED)
DSSOO12A
www.ti.com
EXAMPLE STENCIL DESIGN
12X (0.25)
12X (0.5)
10X (0.5)
(0.9)
(0.9)
(1.9)
(R ) TYP0.05
WSON - 0.8 mm max heightDSS0012A
PLASTIC SMALL OUTLINE - NO LEAD
4222684/A 02/2016
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 13:
90% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:20X
SYMM
1
67
12
SYMM
METAL
TYP
13
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