Lumissil Microsystems 的 IS31AP4990D 规格书

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IS31AP4990D
Lumissil Microsystems – www.lumissil.com 1
Rev. C, 06/24/2014
1.2W AUDIO POWER AMPLIFIER WITH ACTIVE-LOW SHUTDOWN MODE
June 2014
DESCRIPTION
The IS31AP4990D has been designed for demanding
audio applications such as mobile phones and permits
the reduction of the number of external components.
It is capable of delivering 1.2W of continuous RMS
output power into an 8Ω load @ 5V.
An externally-controlled shutdown mode reduces the
supply current to less than 1μA. It also includes
internal thermal shutdown protection.
The unity-gain stable amplifier can be configured by
external gain setting resistors.
FEATURES
Operating from VCC = 2.7V ~ 5.5V
1.2W output power @ VCC = 5V, THD+N= 1%,
f = 1kHz, with 8Ω load
Ultra-low consumption in shutdown mode (1μA)
Near-zero pop & click
Ultra-low distortion
Unity gain stable
UTQFN-9L (1.5mm × 1.5mm) package
APPLICATIONS
Mobile phones
PDAs
Portable electronic devices
Notebook computer
TYPICAL APPLICATION CIRCUIT
Figure 1 Typical Application Circuit (Single-ended Input)
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IS31AP4990D
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Rev. C, 06/24/2014
Figure 2 Typical Application Circuit (Differential Input)
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IS31AP4990D
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Rev. C, 06/24/2014
PIN CONFIGURATION
Package Pin Configuration (Top View)
UTQFN-9L
PIN DESCRIPTION
No. Pin Function Description
A1 IN- Negative input of the first amplifier. Connected to the feedback
resistor RF- and to the input resistor RIN-.
A2 OUT- Negative output. Connected to the load and to the feedback
resistor RF-.
A3 IN+ Positive input of the first amplifier.
B1,B2 GND Ground.
B3 VCC Supply voltage.
C1 BYPASS
Bypass capacitor pin which provides the common mode voltage
(VCC/2).
C2 OUT+ Positive output. Connected to the load.
C3 SDB The device enters in shutdown mode when a low level is applied
on this pin.
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IS31AP4990D
Lumissil Microsystems – www.lumissil.com 4
Rev. C, 06/24/2014
ORDERING INFORMATION
Industrial Range: -40°C to +85°C
Order Part No. Package QTY/Reel
IS31AP4990D-UTLS2-TR UTQFN-9, Lead-free 3000
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productsatanytimewithoutnotice.LumissilMicrosystemsassumesnoliabilityarisingoutoftheapplicationoruseofanyinformation,productsor
servicesdescribedherein.Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonanypublishedinformationand
beforeplacingordersforproducts.
LumissilMicrosystemsdoesnotrecommendtheuseofanyofitsproductsinlifesupportapplicationswherethefailureormalfunctionoftheproductcan
reasonablybeexpectedtocausefailureofthelifesupportsystemortosignificantlyaffectitssafetyoreffectiveness.Productsarenotauthorizedforusein
suchapplicationsunlessLumissilMicrosystemsreceiveswrittenassurancetoitssatisfaction,that:
a.)theriskofinjuryordamagehasbeenminimized;
b.)theuserassumeallsuchrisks;and
c.)potentialliabilityofLumissilMicrosystemsisadequatelyprotectedunderthecircumstances
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IS31AP4990D
Lumissil Microsystems – www.lumissil.com 5
Rev. C, 06/24/2014
ABSOLUTE MAXIMUM RATINGS
Supply voltage, VCC -0.3V ~ +6.0V
Voltage at any input pin -0.3V ~ VCC+0.3V
Maximum junction temperature, TJMAX +150°C
Storage temperature range, TSTG -65°C ~ +150°C
Operating temperature range, TA -40°C ~ +85°C
ESD (HBM)
ESD (CDM)
±7kV
±500V
Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = -40°C ~ +85°C, VCC = 2.7V ~ 5.5V, unless otherwise noted. Typical value are TA = +25°C.
Symbol Parameter Condition Min. Typ. Max. Unit
VCC Power supply 2.7 5.5 V
ICC Quiescent current VCC = 5V, VIN = 0V, IO = 0A, no load 3.8 6.4 mA
VCC = 3V, VIN = 0V, IO = 0A, no load 2.8 5.1
ISD Shutdown current VSDB = GND, no load 1 μA
VIH Shutdown voltage input high 1.4 V
VIL Shutdown voltage input low 0.4 V
VOS Output offset voltage 25 mV
Po Output power (8Ω)
VCC = 5V THD+N = 1%, f = 1kHz 1.20
W
THD+N = 10%, f = 1kHz 1.50
VCC = 3V THD+N = 1%, f = 1kHz 0.418
THD+N = 10%, f = 1kHz 0.525
tWU Wake-up time (Note 1) VCC = 5V, CBYPASS = 1μF 115
ms
VCC = 3V, CBYPASS = 1μF 102
THD+N Total harmonic distortion +
noise (Note 1)
VCC = 5V, PO = 0.5Wrms, f = 1kHz 0.23 %
VCC = 3V, Po = 0.3Wrms, f = 1kHz 0.15
PSRR Power supply rejection ratio
(Note 1)
VCC = 5V
VRipple p-p = 200mV
Input grounded
f = 217Hz 61
dB
f = 1kHz 65
VCC = 3.6V, 4.2V
VRipple p-p = 200mV
Input grounded
f = 217Hz 62
f = 1kHz 66
Note 1: Guaranteed by design.
“n, A
IS31AP4990D
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Rev. C, 06/24/2014
TYPICAL PERFORMANCE CHARACTERISTIC
THD+N(%)
10m 20m 50m 100m 200m 500m 12
Output Power(W)
20
0.1
0.2
0.5
1
2
5
10
R
L
= 8
f = 1kHz
V
CC
= 3V
V
CC
= 5V
Figure 3 THD+N vs. Output Power
PSRR(dB)
20 20k50 100 200 500 1k 2k 5k 10k
Frequency(Hz)
-120
+0
-100
-80
-60
-40
-20
V
CC
= 3.6V, 4.2V
R
L
= 8
Input Grounded
Figure 5 PSRR vs. Frequency
Output Voltage(V)
20 20k50 100 200 500 1k 2k 5k 10k
Frequency(H z)
10u
20u
30u
50u
70u
100
u
V
CC
= 3V, 5V
R
L
= 8
Figure 7 Noise Floor
0.01
0.02
0.05
0.1
0.2
1
2
10
THD+N(%)
20 20k50 100 200 500 1k 2k 5k 10k
Frequency(H z)
20
R
L
= 8
V
CC
= 3V
P
O
= 250mW
V
CC
= 5V
P
O
= 800mW
Figure 4 THD+N vs. Frequency
PSRR(dB)
20 20k50 100 200 500 1k 2k 5k 10k
Frequency(Hz)
-120
+0
-100
-80
-60
-40
-20
V
CC
= 5V
R
L
= 8
Input Float
Input Grounded
Figure 6 PSRR vs. Frequency
Power Supply(V)
Output Power(W)
0
0.4
0.8
1.0
1.8
1.4
0.2
0.6
1.2
1.6
2.0
33.544.555.5
RL = 8
f = 1kHz
THD+N = 10%
THD+N = 1%
Figure 8 Output Power vs. Power Supply
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IS31AP4990D
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Rev. C, 06/24/2014
Output Power(W)
Efficiency(%）
0
10
20
30
40
50
60
70
0 0.2 0.4 0.6 0.8 1 1.2
V
CC
= 5V
R
L
= 8
f = 1kHz
THD+N<1%
Figure 9 Efficiency vs. Output Power
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IS31AP4990D
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Rev. C, 06/24/2014
APPLICATION INFORMATION
BTL CONFIGURATION PRINCIPLE
The IS31AP4990D is a monolithic power amplifier with
a BTL output type. BTL (bridge tied load) means that
each end of the load is connected to two single-ended
output amplifiers. Thus, we have:
Single-ended output 1 = VOUT+ = VOUT (V)
Single ended output 2 = VOUT- = -VOUT (V)
and VOUT+ - VOUT- = 2VOUT (V)
The output power is:
L
OUT
OUT R
V
PRMS
2
)2(
For the same power supply voltage, the output power
in BTL configuration is four times higher than the
output power in single ended configuration.
GAIN IN A TYPICAL APPLICATION SCHEMATIC
The typical application schematic is shown in Figure 1
on page 1.
In the flat region (no CIN effect), the output voltage of
the first stage is (in Volts):
IN
F
INOUT R
R
VV )(
For the second stage: VOUT+ = -VOUT- (V)
The differential output voltage is (in Volts):
IN
F
INOUTOUT R
R
VVV 2
The differential gain, Gv, in shourt, is given by:
IN
F
IN
OUTOUT
vR
R
V
VV
G2
VOUT+ is in phase with VIN and VOUT- is phased 180°
with VIN. This means that the positive terminal of the
loudspeaker should be connected to VOUT+ and the
negative to VOUT-.
LOW AND HIGH FREQUENCY RESPONSE
In the low frequency region, CIN starts to have an effect.
CIN forms with RIN a high-pass filter with a -3dB cut-off
frequency. fCL is in Hz.
ININ
CL CR
f
2
1
In the high frequency region, you can limit the
bandwidth by adding a capacitor (CF) in parallel with RF.
It forms a low-pass filter with a -3dB cut-off frequency.
fCH is in Hz.
FF
CH CR
f
2
1
DECOUPLING OF THE CIRCUIT
Two capacitors are needed to correctly bypass the
IS31AP4990D: a power supply bypass capacitor CS
and a bias voltage bypass capacitor CBYPASS.
CS has particular influence on the THD+N in the high
frequency region (above 7kHz) and an indirect
influence on power supply disturbances. With a value
for CS of 1μF, you can expect THD+N levels similar to
those shown in the datasheet.
In the high frequency region, if CS is lower than 1μF, i t
increases THD+N and disturbances on the power
supply rail are less filtered.
On the other hand, if CS is higher than 1μF, those
disturbances on the power supply rail are more filtered.
CBYPASS has an influence on THD+N at lower
frequencies, but its function is critical to the final result
of PSRR (with input grounded and in the lower
frequency region).
If CBYPASS is lower than 1μF, THD+N increases at lower
frequencies and PSRR worsens.
If CBYPASS is higher than 1μF, the benefit on THD+N at
lower frequencies is small, but the benefit to PSRR is
substantial.
Note that CIN has a non-negligible effect on PSRR at
lower frequencies. The lower the value of CIN, the
higher the PSRR is.
WAKE-UP TIME (tWU)
When the SDB pin is released to put the device ON,
the bypass capacitor CBYPASS will not be charged
immediately. As CBYPASS is directly linked to the bias of
the amplifier, the bias will not work properly until the
CBYPASS voltage is correct. The time to reach this
voltage is called wake-up time or tWU and specified in
the electrical characteristics table with CBYPASS = 1μF.
POP PERFORMANCE
Pop performance is intimately linked with the size of
the input capacitor CIN and the bias voltage bypass
capacitor CBYPASS.
The size of CIN is dependent on the lower cut-off
frequency and PSRR values requested. The size of
CBYPASS is dependent on THD+N and PSRR values
requested at lower frequencies.
Moreover, CBYPASS determines the speed with which
the amplifier turns ON.
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IS31AP4990D
Lumissil Microsystems – www.lumissil.com 9
Rev. C, 06/24/2014
CLASSIFICATION REFLOW PROFILES
Profile Feature Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
150°C
200°C
60-120 seconds
Average ramp-up rate (Tsmax to Tp) 3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL)
217°C
60-150 seconds
Peak package body temperature (Tp)* Max 260°C
Time (tp)** within 5°C of the specified
classification temperature (Tc) Max 30 seconds
Average ramp-down rate (Tp to Tsmax) 6°C/second max.
Time 25°C to peak temperature 8 minutes max.
Figure 10 Classification Profile
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IS31AP4990D
Lumissil Microsystems – www.lumissil.com 10
Rev. C, 06/24/2014
PACKAGING INFORMATION
UTQFN-9L
Note: All dimensions in millimeters unless otherwise stated.