onsemi 的 MMBT3906TT1 规格书

M M BT3906TT1 General Purpose TranSIstors PNP Silicon This transistor is designed tor general purpose amplifier applications It is housed in Ihe SOT—416/SC—75 package which is designed tor low power surface mount applications. Fealures I NSVM Prefix {or Aulomolive and Other Applications Requiring Unique Site and Control Change Requirements I These Devices are Pb—Free, Halogen Free/BFR Free and are ROHS Complianl MAXIMUM RATINGS {TA = 25%;) Rating Symbol Value Unit CollectdreEmitter Voltage VCEQ 740 Vde Collectdreaase Voltage VCEQ 740 Vde Emittereaaee Voltage VEEO 75.0 Vde Collector Cunerli , Continuous I5 7200 mAdc THEHMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Deuiee Dieeipaticn, PD FRA Board mate 1) @TA = 25°C 200 mW Derated above 25~c 1.5 mW/CC Thermal Reeistanee, dunetionetceAmbient Rm 600 ”CW (Note H Total Devree Dieeipaticn, PD FRA Board mate 2) @TA = 25°C 300 mW Derated above 25~c 2.4 mW/CC Thermal Reeistanee, dunetionetceAmbient Rm 400 ”CW (Note 2t Junction and Slorage Temperature Range Ta T5.g £5 to +150 QC Slresses exceeding those listed in the Maximum Ratings table may damage the device. ll any at these limits are exceeded devree Iuncticnality should not be assumed damage may occuv and reliablhly may be allecied, i FReA @ Minimum Pad 2 FReA @ i o X 1.0 Inch Pad n Semiconduclurcnmpunenls induslrtes. LLC ZEUS I August, 20w — Rev. 3 0N Semiconductor® WW nsem om GENERA AMPLIFIER SURFA BASE ORDERING INFOFI Device Packag Publica
© Semiconductor Components Industries, LLC, 2006
August, 2017 − Rev. 3 1Publication Order Number:
MMBT3906TT1/D
MMBT3906TT1
General Purpose
Transistors
PNP Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−416/SC−75 package which is
designed for low power surface mount applications.
Features
•NSVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −40 Vdc
Collector−Base Voltage VCBO −40 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1) @TA = 25°C
Derated above 25°C
PD200
1.6 mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1) RqJA 600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2) @TA = 25°C
Derated above 25°C
PD300
2.4 mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2) RqJA 400 °C/W
Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad Device Package Shipping†
ORDERING INFORMATION
CASE 463
SOT−416/SC−75
STYLE 1
3000 / Tape &
Reel
MARKING DIAGRAM
3
2
1
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
2A M G
G
2A = Device Code
M = Date Code*
G= Pb−Free Package
1
MMBT3906TT1G SOT−416
(Pb−Free)
*Date Code orientation may vary depending up-
on manufacturing location.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
NSVMMBT3906TT1G SOT−416
(Pb−Free) 3000 / Tape &
Reel
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 −Vdc
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0) V(BR)CBO −40 −Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 −Vdc
Base Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc) IBL −−50 nAdc
Collector Cutoff Current
(VCE = −30 Vdc, VEB = −3.0 Vdc) ICEX −−50 nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE 60
80
100
60
30
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat) −
−−0.25
−0.4
Vdc
Base−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat) −0.65
−−0.85
−0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) fT250 − MHz
Output Capacitance
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo − 4.5 pF
Input Capacitance1
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 10.0 pF
Input Impedance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hie 2.0 12 k W
Voltage Feedback Ratio
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hre 0.1 10 X 10−4
Small−Signal Current Gain
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hfe 100 400 −
Output Admittance
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hoe 3.0 60 mmhos
Noise Figure
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td− 35 ns
Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr− 35
Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts− 225 ns
Fall Time (IB1 = IB2 = −1.0 mAdc) tf− 75
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
0:05 02 0,1 0.05 0,02 0.01 SINGLE PULSE Figure 2. Delay and Rise Time Figure 3. Storage and Fall Ti Equivalenl Test Circuii Equivaleni Tesi Circuit www.0nsemi.com 3
MMBT3906TT1
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3
Figure 1. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 2. Delay and Rise Time
Equivalent Test Circuit Figure 3. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916 CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+10.6 V 300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
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TYPICAL TRANSIENT CHARACTERISTICS
Cibo
Cobo
Figure 4. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 5. Charge Data
IC, COLLECTOR CURRENT (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QT
QA
TJ = 25°C
TJ = 125°C
Figure 6. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
t , FALL TIME (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
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TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
Figure 8.
f, FREQUENCY (kHz)
1.0
2.0
3.0
4.0
5.0
0.1
Figure 9.
RS, SOURCE RESISTANCE (kW)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0
100
4.0
6.0
8.0
10
2.0
12
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
hfe, CURRENT GAIN
Figure 10. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 11. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 12. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
70
10
30
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k
ie
0.1 0.2 1.0 2.0 5.0 10
0.5
0.1 0.2 1.0 2.0 5.0 10
0.5
7.0
5.0
0.1 0.2 1.0 2.0 5.0 10
0.5
m
-4
h PARAMETERS
(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)
50
20
Ω)
0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0
0.3
0.7
3.0
7.0
0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0
TFHZS‘C 25°C 755°C V; FOR vow, 5° T0 um: 755°C T0 am To ”WC 755°C T0 +25
MMBT3906TT1
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STATIC CHARACTERISTICS
Figure 14. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1
100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125°C
+25°C
-55°C
Figure 15. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 16. “ON” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 17. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20 50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
200
TJ = 25°CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V +25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVS FOR VBE(sat)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
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SC−75/SOT−416
CASE 463−01
ISSUE G
DATE 07 AUG 2015
SCALE 4:1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 2:
PIN 1. ANODE
2. N/C
3. CATHODE
3
2
1
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
XX M
G
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
1
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.061 0.063 0.065
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.060 0.063 0.067
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
12
3
1.803
0.071
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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