onsemi 的 MMBF,SMMBF439xL 规格书

0N Semiconductor® www.0nsemi.com
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12
1Publication Order Number:
MMBF4391LT1/D
MMBF4391L, MMBF4392L,
MMBF4393L
JFET Switching Transistors
N−Channel
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage VDS 30 Vdc
Drain−Gate Voltage VDG 30 Vdc
Gate−Source Voltage VGS 30 Vdc
Forward Gate Current IG(f) 50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
SOT−23
CASE 318
STYLE 10
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
MARKING & ORDERING INFORMATION
www.onsemi.com
2 SOURCE
3
GATE
1 DRAIN
XXX = Specific Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MARKING DIAGRAM
1
XXX M G
G
2
1
3
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 1.0 mAdc, VDS = 0)
V(BR)GSS 30 −Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
IGSS
−
−
1.0
0.20
nAdc
mAdc
Gate−Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
VGS(off)
−4.0
−2.0
−0.5
−10
−5.0
−3.0
Vdc
Off−State Drain Current
(VDS = 15 Vdc, VGS = −12 Vdc)
(VDS = 15 Vdc, VGS = −12 Vdc, TA = 100°C)
ID(off)
−
−
1.0
1.0
nAdc
mAdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
IDSS
50
25
5.0
150
75
30
mAdc
Drain−Source On−Voltage
(ID = 12 mAdc, VGS = 0)
MMBF4391LT1
(ID = 6.0 mAdc, VGS = 0)
MMBF4392LT1
(ID = 3.0 mAdc, VGS = 0)
MMBF4393LT1
VDS(on)
−
−
−
0.4
0.4
0.4
Vdc
Static Drain−Source On−Resistance
(ID = 1.0 mAdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
rDS(on)
−
−
−
30
60
100
W
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 0 Vdc, VGS = −15 Vdc, f = 1.0 MHz)
Ciss
−14
pF
Reverse Transfer Capacitance
(VDS = 0 Vdc, VGS = −12 Vdc, f = 1.0 MHz)
Crss
−3.5
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device Marking Package Shipping†
MMBF4391LT1G 6J
SOT−23
(Pb−Free) 3,000 / Tape & Reel
SMMBF4391LT1G* 6J
MMBF4392LT1G 6K
MMBF4393LT1G M6G
SMMBF4393LT1G* M6G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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MMBF4391L, MMBF4392L, MMBF4393L
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3
TYPICAL CHARACTERISTICS
TJ = 25°C
ID, DRAIN CURRENT (mA)
, TURN-ON DELAY TIME (ns)
d(on)
t
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20
ID, DRAIN CURRENT (mA)
, RISE TIME (ns)
r
t
Figure 1. Turn−On Delay Time Figure 2. Rise Time
RK = RD'
RK = 0
RK = RD'
RK = 0
ID, DRAIN CURRENT (mA)
, TURN-OFF DELAY TIME (ns)
d(off)
t
Figure 3. Turn−Off Delay Time
RK = RD'
RK = 0
ID, DRAIN CURRENT (mA)
Figure 4. Fall Time
RK = RD'
RK = 0
, FALL TIME (ns)
f
t
MMBF4391
MMBF4392
MMBF4393
30 50
200
500
1000
0.5 1.0 3.0 7.05.00.7 2.0 10 20 30 50
5.0
2.0
20
10
1.0
50
100
200
500
1000
0.5 1.0 3.0 7.0
5.0
0.7 2.0 10 20 30 500.5 1.0 3.0 7.0
5.0
0.7 2.0 10 20 30 50
5.0
2.0
20
10
1.0
50
100
200
500
1000
5.0
2.0
20
10
1.0
50
100
200
500
1000
TJ = 25°C
MMBF4391
MMBF4392
MMBF4393
TJ = 25°C
MMBF4391
MMBF4392
MMBF4393
TJ = 25°C
MMBF4391
MMBF4392
MMBF4393
VGS(off) = 12 V
= 7.0 V
= 5.0 V
VGS(off) = 12 V
= 7.0 V
= 5.0 V
VGS(off) = 12 V
= 7.0 V
= 5.0 V
VGS(off) = 12 V
= 7.0 V
= 5.0 V
V .5 .FOHWAHD TRANSFER ADMITTAN CE immims) Figure 5. Switching Time Test C 20 m 7 0 1mm 51‘s 5 0 vD5 = IS v a o 20 0,501 10 20 an an mm ID. DRAIN CURRENTimA Figure 6. Typical Forward Transier Tunanm
MMBF4391L, MMBF4392L, MMBF4393L
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4
Figure 5. Switching Time Test Circuit
Figure 6. Typical Forward Transfer Admittance Figure 7. Typical Capacitance
ID, DRAIN CURRENT (mA)
2.0
5.0
3.0
7.0
0.5 1.0 3.0 7.05.0 5030
10
20
0.7 2.0 10 20
, FORWARD TRANSFER ADMITTANCE (mmhos)
fs
V
10
2.0
15
3.0
5.0
7.0
0.5 1.0 3.0 305.00.30.1 100.050.03
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Tchannel = 25°C
VDS = 15 V Tchannel = 25°C
(Cds is negligible
Cgs
VDD
VGG
RGG
RT
RGEN
50 W
VGEN
RK
RD
OUTPUT
INPUT
50
W
50
W
SET VDS(off) = 10 V
INPUT PULSE
tr ≤ 0.25 ns
tf ≤ 0.5 ns
PULSE WIDTH = 2.0 ms
DUTY CYCLE ≤ 2.0%
RGG > RK
RD' = RD(RT + 50)
RD + RT + 50
Figure 8. Effect of Gate−Source Voltage
on Drain−Source Resistance
80
120
160
200
50
1.0 3.0 170
5.0 20-10-40
2.0 80 140-70
VGS, GATE-SOURCE VOLTAGE (VOLTS)
r
4.00
40
100 mA 125 mA
75 mA50 mA
25 mA
IDSS
= 10
mA
Tchannel = 25°C
Figure 9. Effect of Temperature on Drain−Source
On−State Resistance
1.8
1.0
2.0
1.2
1.4
1.6
0.8
0.6
0.4
ID = 1.0 mA
VGS = 0
, DRAIN-SOURCE ON-STATE
DS(on)
RESISTANCE (NORMALIZED)
Tchannel, CHANNEL TEMPERATURE (°C)
1.5
1.0
Cgd
110
6.0 7.0 8.0
0
r , DRAIN-SOURCE ON-STATE
DS(on) RESISTANCE (OHMS)
MMBF4393
MMBF4392 MMBF4391
NOTE 1
The switching characteristics shown above were measured using
a test circuit similar to Figure 5. At the beginning of the switching
interval, the gate voltage is at Gate Supply Voltage (−VGG). The
Drain−Source Voltage (VDS) is slightly lower than Drain Supply
Voltage (VDD) due to the voltage divider. Thus Reverse Transfer
Capacitance (Crss) of Gate−Drain Capacitance (Cgd) is charged to
VGG + VDS.
During the turn−on interval, Gate−Source Capacitance (Cgs)
discharges through the series combination of RGen and RK. Cgd must
discharge to VDS(on) through RG and RK in series with the parallel
combination of effective load impedance (R’D) and Drain−Source
Resistance (rDS). During the turn−off, this charge flow is reversed.
Predicting turn−on time is somewhat difficult as the channel
resistance rDS is a function of the gate−source voltage. While Cgs
discharges, VGS approaches zero and rDS decreases. Since Cgd
discharges through rDS, turn−on time is non−linear. During turn−off,
the situation is reversed with rDS increasing as Cgd charges.
The above switching curves show two impedance conditions; 1)
RK is equal to RD’ which simulates the switching behavior of
cascaded stages where the driving source impedance is normally the
load impedance of the previous stage, and 2) RK = 0 (low
impedance) the driving source impedance is that of the generator.
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5
Figure 10. Effect of IDSS on Drain−Source
Resistance and Gate−Source Voltage
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
, DRAIN-SOURCE ON-STATE
DS(on)
r
20
10
30
40
50
30 40 50 60 70
20
RESISTANCE (OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
, GATE-SOURCE VOLTAGE
GS
V
(VOLTS)
Tchannel = 25°C
VGS(off)
rDS(on) @ VGS = 0
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero−Gate−Voltage Drain Current (IDSS) is the
principle determinant of other J−FET characteristics.
Figure 10 shows the relationship of Gate−Source Off
Voltage (VGS(off)) and Drain−Source On Resistance
(rDS(on)) to IDSS. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations for
a given part number.
For example:
Unknown
rDS(on) and VGS range for an MMBF4392
The electrical characteristics table indicates that an
MMBF4392 has an IDSS range of 25 to 75 mA. Figure
10 shows rDS(on) = 52 W for IDSS = 25 mA and 30 W for
IDSS = 75 mA. The corresponding VGS values are 2.2 V
and 4.8 V.
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SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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SOT−23 (TO−236)
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