Texas Instruments 的 OPA170,2170,4170 规格书

X w TEXAS INSTRUMENTS
PackageFootprintComparison(toScale)
PackageHeight (toScale)Comparison
D(SO-8) DBV(SOT23-5) DRL(SOT553)
Product
Folder
Order
Now
Technical
Documents
Tools &
Software
Support &
Community
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
OPAx170 36-V, Single-Supply, SOT553, Low-Power Operational Amplifiers Value Line
Series
1
1 Features
1 Supply Range: 2.7 V to 36 V, ±1.35 V to ±18 V
Low Noise: 19 nV/Hz
RFI Filtered Inputs
Input Range Includes the Negative Supply
Input Range Operates to Positive Supply
Rail-to-Rail Output
Gain Bandwidth: 1.2 MHz
Low Quiescent Current: 110 µA per Amplifier
High Common-Mode Rejection: 120 dB
Low Bias Current: 15 pA (Maximum)
Industry-Standard Packages and micro Packages
Available
Create a Custom Design Using the OPAx170 With
the WEBENCH®Power Designer
2 Applications
Tracking Amplifier in Power Modules
Merchant Power Supplies
Transducer Amplifiers
Bridge Amplifiers
Temperature Measurements
Strain Gauge Amplifiers
Precision Integrators
Battery-Powered Instruments
Test Equipment
3 Description
The OPA170, OPA2170, and OPA4170 devices
(OPAx170) are a family of 36-V, single-supply, low-
noise operational amplifiers (op amps) that feature
micro packages with the ability to operate on supplies
ranging from 2.7 V (±1.35 V) to 36 V (±18 V). They
offer good offset, drift, and bandwidth with low
quiescent current. The single, dual, and quad
versions all have identical specifications for maximum
design flexibility.
Unlike most op amps, which are specified at only one
supply voltage, the OPAx170 family of op amps is
specified from 2.7 V to 36 V. Input signals beyond the
supply rails do not cause phase reversal. The
OPAx170 family is stable with capacitive loads up to
300 pF. The input can operate 100 mV below the
negative rail and within 2 V of the positive rail for
normal operation. Note that these devices can
operate with full rail-to-rail input 100 mV beyond the
positive rail, but with reduced performance within 2 V
of the positive rail. The OPAx170 op amps are
specified from –40°C to +125°C.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
OPA170
SOIC (8) 4.90 mm × 3.91 mm
SOT (5) 1.60 mm × 1.20 mm
SOT-23 (5) 2.90 mm × 1.60 mm
OPA2170
SOIC (8) 4.90 mm × 3.91 mm
VSSOP (8) 3.00 mm × 3.00 mm
VSSOP (8), micro size 2.30 mm × 2.00 mm
WSON (8) 2.00 mm × 2.00 mm
OPA4170 SOIC (14) 8.65 mm × 3.91 mm
TSSOP (14) 5.00 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Smallest Packaging for 36-V Operational Amplifiers
l TEXAS INSTRUMENTS
2
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
Table of Contents
1 Features.................................................................. 1
2 Applications ........................................................... 1
3 Description ............................................................. 1
4 Revision History..................................................... 2
5 Device Comparison Table..................................... 3
6 Pin Configuration and Functions......................... 4
7 Specifications......................................................... 7
7.1 Absolute Maximum Ratings ...................................... 7
7.2 ESD Ratings.............................................................. 7
7.3 Recommended Operating Conditions....................... 7
7.4 Thermal Information: OPA170 .................................. 8
7.5 Thermal Information: OPA2170 ................................ 8
7.6 Thermal Information: OPA4170 ................................ 8
7.7 Electrical Characteristics........................................... 9
7.8 Typical Characteristics............................................ 11
8 Detailed Description............................................ 18
8.1 Overview ................................................................. 18
8.2 Functional Block Diagram ...................................... 18
8.3 Feature Description................................................. 18
8.4 Device Functional Modes........................................ 22
9 Application and Implementation ........................ 23
9.1 Application Information............................................ 23
9.2 Typical Application .................................................. 23
10 Power Supply Recommendations ..................... 26
11 Layout................................................................... 26
11.1 Layout Guidelines ................................................. 26
11.2 Layout Example .................................................... 26
12 Device and Documentation Support ................. 28
12.1 Device Support...................................................... 28
12.2 Documentation Support ........................................ 29
12.3 Related Links ........................................................ 29
12.4 Receiving Notification of Documentation Updates 29
12.5 Community Resources.......................................... 29
12.6 Trademarks........................................................... 30
12.7 Electrostatic Discharge Caution............................ 30
12.8 Glossary................................................................ 30
13 Mechanical, Packaging, and Orderable
Information ........................................................... 30
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision D (December 2017) to Revision E Page
Changed minimum supply voltage from –20 V to 0 V in Absolute Maximum Ratings table .................................................. 7
Changed maximum supply voltage from 20 V to 40 V in Absolute Maximum Ratings table ................................................ 7
Changes from Revision C (March 2016) to Revision D Page
Added WEBENCH links and sections and Receiving Notification of Documentation Updates.............................................. 1
Added 8-Pin DSG (WSON) package...................................................................................................................................... 1
Changed values in Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application from: 250 Ωto: 2.5 Ω........ 20
Changes from Revision B (September 2012) to Revision C Page
Added current package designators to Features list and final paragraph of Description section.......................................... 1
Added Pin Functions table, ESD Ratings table, Recommended Operating Conditions table, Detailed Description
section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section ............................... 1
Changes from Revision A (September 2011) to Revision B Page
Added "Value Line Series" to document title.......................................................................................................................... 1
l TEXAS INSTRUMENTS
3
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
5 Device Comparison Table
DEVICE NO OF
CHANNELS
PACKAGE-LEAD
SOT SOT23-5 D DSG VSSOP VSSOP
(micro size) TSSOP
OPA170 1 5 5 8
OPA2170 2 — 8 8 8 8 —
OPA4170 4 — — 14 — — 14
l TEXAS INSTRUMENTS U U U U flggfl UUUU
1
2
3
4
8
7
6
5
NC(1)
V+
OUT
NC(1)
NC(1)
-IN
+IN
V-
1
2
3
5
4
V+
-IN
OUT
V-
+IN
1
2
3
5
4
V+
OUT
IN+
V-
IN-
4
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
6 Pin Configuration and Functions
OPA170 DRL Package
5-Pin SOT
Top View
OPA170 DBV Package
5-Pin SOT-23
Top View
OPA170 D Package
8-Pin SOIC
Top View
(1) NC indicates no internal connection.
Pin Functions: OPA170
PIN I/O DESCRIPTION
NAME SOT SOT-23 D
IN– (–IN) 3 4 2 I Negative (inverting) input
IN+ (+IN) 1 3 3 I Positive (noninverting) input
NC(1) 1, 5, 8 No internal connection (can be left floating)
OUT 4 1 6 O Output
V+ 5 5 7 Positive (highest) power supply
V– 2 2 4 Negative (lowest) power supply
‘5‘ TEXAS INSTRUMENTS flflflq E9 WW mung VII 4 JLIO
1
2
3
4
8
7
6
5
V+
OUTB
-INB
+INB
OUTA
-INA
+INA
V-
5
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
OPA2170 D, DGK, and DCU Packages
8-Pin VSSOP, SOIC, and VSSOP (micro size)
Top View
OPA2170 DSG Package
8-Pin WSON
Top View
Pin Functions: OPA2170
PIN
I/O DESCRIPTION
NAME SOIC VSSOP VSSOP
(micro
size) WSON
–IN A 2 2 2 2 I Inverting input, channel A
–IN B 6 6 6 6 I Inverting input, channel B
+IN A 3 3 3 3 I Noninverting input, channel A
+IN B 5 5 5 5 I Noninverting input, channel B
OUT A 1 1 1 1 O Output, channel A
OUT B 7 7 7 7 O Output, channel B
V– 4 4 4 4 Negative (lowest) power supply
V+ 8 8 8 8 Positive (highest) power supply
‘5‘ TEXAS INSTRUMENTS
1
2
3
4
14
13
12
11
OUTD
-IND
+IND
V-
OUTA
-INA
+INA
V+
5
6
7
10
9
8
+INC
-INC
OUTC
+INB
-INB
OUTB
6
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
OPA4170 D and PW Packages
14-Pin SOIC and TSSOP
Top View
Pin Functions: OPA4170
PIN I/O DESCRIPTION
NAME SOIC TSSOP
–IN A 2 2 I Inverting input, channel A
–IN B 6 6 I Inverting input, channel B
–IN C 9 9 I Inverting input, channel C
–IN D 13 13 I Inverting input, channel D
+IN A 3 3 I Noninverting input, channel A
+IN B 5 5 I Noninverting input, channel B
+IN C 10 10 I Noninverting input, channel C
+IN D 12 12 I Noninverting input, channel D
OUT A 1 1 O Output, channel A
OUT B 7 7 O Output, channel B
OUT C 8 8 O Output, channel C
OUT D 14 14 O Output, channel D
V– 11 11 Negative (lowest) power supply
V+ 4 4 Positive (highest) power supply
l TEXAS INSTRUMENTS
7
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Short-circuit to ground, one amplifier per package.
7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range, unless otherwise noted.(1)
MIN MAX UNIT
Supply voltage 0 40 V
Single supply voltage 40 V
Signal input pin voltage (V–) – 0.5 (V+) + 0.5 V
Signal input pin current –10 10 mA
Output short-circuit current(2) Continuous
Operating ambient temperature, TA–55 150 °C
Junction temperature, TJ150 °C
Storage temperature, Tstg –65 150 °C
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VSSupply voltage (V+ – V–) 2.7 36 V
TAOperating temperature –40 125 °C
l TEXAS INSTRUMENTS
8
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information: OPA170
THERMAL METRIC(1)
OPA170
UNITD (SOIC) DBV (SOT-23) DRL (SOT)
8 PINS 5 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 149.5 245.8 208.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 97.9 133.9 0.1 °C/W
RθJB Junction-to-board thermal resistance 87.7 83.6 42.4 °C/W
ψJT Junction-to-top characterization parameter 35.5 18.2 0.5 °C/W
ψJB Junction-to-board characterization parameter 89.5 83.1 42.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.5 Thermal Information: OPA2170
THERMAL METRIC(1)
OPA2170
UNITD (SOIC) DCU (VSSOP,
micro size) DGK (VSSOP) DSG (WSON)
8 PINS 8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 134.3 175.2 180 71.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 72.1 74.9 55 89.1 °C/W
RθJB Junction-to-board thermal resistance 60.6 22.2 130 38.8 °C/W
ψJT Junction-to-top characterization parameter 18.2 1.6 5.3 3.8 °C/W
ψJB Junction-to-board characterization parameter 53.8 22.8 120 38.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — — 13 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.6 Thermal Information: OPA4170
THERMAL METRIC(1)
OPA4170
UNITD (SOIC) PW (TSSOP)
14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 93.2 106.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 51.8 24.4 °C/W
RθJB Junction-to-board thermal resistance 49.4 59.3 °C/W
ψJT Junction-to-top characterization parameter 13.5 0.6 °C/W
ψJB Junction-to-board characterization parameter 42.2 54.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance °C/W
l TEXAS INSTRUMENTS
9
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
(1) The input range can be extended beyond (V+) – 2 V up to V+. See the Typical Characteristics and Application and Implementation
sections for additional information.
7.7 Electrical Characteristics
at TA= 25°C, VCM = VOUT = VS/ 2, and RL= 10 kΩconnected to VS/ 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage TA= 25°C 0.25 ±1.8 mV
TA= –40°C to +125°C ±2 mV
dVOS/dT Input offset voltage drift TA= –40°C to +125°C ±0.3 ±2 µV/°C
PSRR Input offset voltage vs power supply VS= 4 V to 36 V, TA= –40°C to +125°C 1 ±5 µV/V
Channel separation, dc 5 µV/V
INPUT BIAS CURRENT
IBInput bias current TA= 25°C ±8 ±15 pA
TA= –40°C to +125°C ±3.5 nA
IOS Input offset current TA= 25°C ±4 ±15 pA
TA= –40°C to +125°C ±3.5 nA
NOISE
Input voltage noise ƒ = 0.1 Hz to 10 Hz 2 µVPP
enInput voltage noise density ƒ = 100 Hz 22 nV/Hz
ƒ = 1 kHz 19 nV/Hz
INPUT VOLTAGE
VCM Common-mode voltage range(1) (V–) – 0.1 (V+) – 2 V
CMRR Common-mode rejection ratio
VS= ±2 V, (V–) - 0.1 V < VCM < (V+) - 2 V,
TA= –40°C to +125°C 90 104 dB
VS= ±18 V, (V–) - 0.1 V < VCM < (V+) - 2 V,
TA= –40°C to +125°C 104 120 dB
INPUT IMPEDANCE
Differential 100 || 3 MΩ|| pF
Common-mode 6 || 3 1012 Ω|| pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain VS= 4 V to 36 V,
(V–) + 0.35 V < VO< (V+) - 0.35 V,
TA= –40°C to +125°C 110 130 dB
FREQUENCY RESPONSE
GBP Gain bandwidth product 1.2 MHz
SR Slew rate G = +1 0.4 V/µs
tSSettling time
To 0.1%, VS= ±18 V, G = +1, 10-V step 20 µs
To 0.01% (12-bit), VS= ±18 V, G = +1,
10-V step 28 µs
Overload recovery time VIN × Gain > VS2 µs
THD+N Total harmonic distortion + noise G = +1, ƒ = 1 kHz, VO= 3 VRMS 0.0002%
l TEXAS INSTRUMENTS
10
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
Electrical Characteristics (continued)
at TA= 25°C, VCM = VOUT = VS/ 2, and RL= 10 kΩconnected to VS/ 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
VOVoltage output swing from positive rail IL= 0 mA, VS= 4 V to 36 V 10 mV
ILsourcing 1 mA, VS= 4 V to 36 V 115 mV
VOVoltage output swing from negative rail IL= 0 mA, VS= 4 V to 36 V 8 mV
ILsinking 1 mA, VS= 4 V to 36 V 70 mV
VOVoltage output swing from rail
VS= 5 V, RL= 10 kΩ; TA= –40°C to +125°C (V–) + 0.03 (V+) – 0.05 V
RL= 10 kΩ, AOL 110 dB,
TA= –40°C to +125°C (V–) + 0.35 (V+) – 0.35 V
ISC Short-circuit current –20 17 mA
CLOAD Capacitive load drive See Typical Characteristics pF
ROOpen-loop output resistance ƒ = 1 MHz, IO= 0 A 900 Ω
POWER SUPPLY
VSSpecified voltage range 2.7 36 V
IQQuiescent current per amplifier IO= 0 A; TA= 25°C 110 145 µA
IO= 0 A; TA= –40°C to +125°C 155 µA
TEMPERATURE
Specified range –40 125 °C
Operating range –55 150 °C
l TEXAS INSTRUMENTS
11
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
7.8 Typical Characteristics
VS= ±18 V, VCM = VS/ 2, RLOAD = 10 kΩconnected to VS/ 2, and CL= 100 pF, (unless otherwise noted)
Table 1. Characteristic Performance Measurements
DESCRIPTION FIGURE
Offset Voltage Production Distribution Figure 1
Offset Voltage Drift Distribution Figure 2
Offset Voltage vs Temperature Figure 3
Offset Voltage vs Common-Mode Voltage Figure 4
Offset Voltage vs Common-Mode Voltage (Upper Stage) Figure 5
Offset Voltage vs Power Supply Figure 6
IBand IOS vs Common-Mode Voltage Figure 7
Input Bias Current vs Temperature Figure 8
Output Voltage Swing vs Output Current (Maximum Supply) Figure 9
CMRR and PSRR vs Frequency (Referred-to-Input) Figure 10
CMRR vs Temperature Figure 11
PSRR vs Temperature Figure 12
0.1-Hz to 10-Hz Noise Figure 13
Input Voltage Noise Spectral Density vs Frequency Figure 14
THD+N Ratio vs Frequency Figure 15
THD+N vs Output Amplitude Figure 16
Quiescent Current vs Temperature Figure 17
Quiescent Current vs Supply Voltage Figure 18
Open-Loop Gain and Phase vs Frequency Figure 19
Closed-Loop Gain vs Frequency Figure 20
Open-Loop Gain vs Temperature Figure 21
Open-Loop Output Impedance vs Frequency Figure 22
Small-Signal Overshoot vs Capacitive Load (100-mV Output Step) Figure 23,Figure 24
No Phase Reversal Figure 25
Positive Overload Recovery Figure 26
Negative Overload Recovery Figure 27
Small-Signal Step Response (100 mV) Figure 28,Figure 29
Large-Signal Step Response Figure 30,Figure 31
Large-Signal Settling Time (10-V Positive Step) Figure 32
Large-Signal Settling Time (10-V Negative Step) Figure 33
Short-Circuit Current vs Temperature Figure 34
Maximum Output Voltage vs Frequency Figure 35
EMIRR IN+ vs Frequency Figure 36
l TEXAS INSTRUMENTS flH—HIHIH sou 5Typwca‘ Um: Shawn sun we 2m) 7200 400 7600 720 ‘ some some 6000 4000 20m: 72000 740m 76000 VW:HEIV isouo Ammo ‘55 ‘s ‘65 w ‘75 15 155 ms suFPU mm
Offset Voltage ( V)m
Normal
Operation
Common-Mode Voltage (V)
5 Typical Units Shown
−500
−300
−100
100
300
500
0 2 4 6 8 10 12 14 16 18 20
VSUPPLY (V)
Offset Voltage (µV)
VSUPPLY = ±1.35V to ± 18V
5 Typical Units Shown
G006
V = 18.1V
CM -
Offset Voltage ( V)m
Common-Mode Voltage (V)
−1000
−800
−600
−400
−200
0
200
400
600
800
1000
−50 −25 0 25 50 75 100 125 150
Temperature (°C)
Offset Voltage (µV)
5 Typical Units Shown
G003
−1200
−1100
−1000
−900
−800
−700
−600
−500
−400
−300
−200
−100
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
−1200
−1100
−1000
−900
−800
−700
−600
−500
−400
−300
−200
−100
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
0
2
4
6
8
10
12
14
16
18
20
Offset Voltage (µV)
Percentage of Amplifiers (%)
Distribution Taken From 400 Amplifiers
G001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
0
5
10
15
20
25
Offset Voltage Drift (µV/°C)
Percentage of Amplifiers (%)
Distribution Taken From 104 Amplifiers
G002
12
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
Figure 1. Offset Voltage Production Distribution Figure 2. Offset Voltage Drift Distribution
Figure 3. Offset Voltage vs Temperature Figure 4. Offset Voltage vs Common-Mode Voltage
Figure 5. Offset Voltage vs Common-Mode Voltage
(Upper Stage)
Figure 6. Offset Voltage vs Power Supply
l TEXAS INSTRUMENTS cm mm cm:
−3
−2
−1
0
1
2
3
−75 −50 −25 0 25 50 75 100 125 150
Temperature (°C)
Power−Supply Rejection Ratio (µV/V)
VS = 2.7V to 36V
VS = 4V to 36V
G012
30
25
20
15
10
5
0
Common-ModeRejectionRatio( V/V)m
-75 -50 -25 0 25 150
Temperature( C)°
50 12510075
V = 1.35V±
S
V = 2V
S±
V = 18V
S±
18
OutputVoltage(V)
0 1 2 3 4 10
OutputCurrent(mA)
5 6 7
17
16
15
14.5
-14.5
-15
-16
-17
-18
8 9
- °40 C
+25 C°
+125 C°
140
120
100
80
60
40
20
0
Common-Mode Rejection Ratio (dB),
Power-Supply Rejection Ratio (dB)
1 10 100 1k 10k 1M
Frequency (Hz)
100k
+PSRR
-PSRR
CMRR
-20 20
V (V)
CM
12
10
8
6
4
2
0
I and I (pA)
B OS
-15 -10 -5 0 5 10 15
IOS
+IB
-IB
V = 18.1V-
CM V = 16.1V
CM
IB+
IB-
IOS
2000
1500
1000
500
0
500
1000
-
-
InputBiasCurrent(pA)
-75 -50 -25 0 25 150
Temperature( C)°
50 12510075
13
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
Figure 7. IBand IOS vs Common-Mode Voltage Figure 8. Input Bias Current vs Temperature
Figure 9. Output Voltage Swing vs Output Current
(Maximum Supply) Figure 10. CMRR and PSRR vs Frequency
(Referred-to Input)
Figure 11. CMRR vs Temperature Figure 12. PSRR vs Temperature
l TEXAS INSTRUMENTS /F Time (Wm) M No 140 130 120 no 100 90 so 70 Specmed Supp‘onllage Range so 04 51216 20 24 25 32 36 Supply VoHage (V) m
Temperature (qC)
IQ (PA)
-50 -25 0 25 50 75 100 125 150
60
70
80
90
100
110
120
130
140
VS = ±18V
VS = ±1.35V
G017
I (µA)
Q
0.01
0.001
0.0001
0.00001
TotalHarmonicDistortion+Noise(%)
10 100 1k 10k 100k
Frequency(Hz)
TotalHarmonicDistortion+Noise(dB)
V =3V
BW=80kHz
OUT RMS
G=+1
R =10k
LW
-80
-100
-120
-140
0.1
0.01
0.001
0.0001
0.00001
TotalHarmonicDistortion+Noise(%)
0.01 0.1 1 10 20
OutputAmplitude(V )
RMS
-60
TotalHarmonicDistortion+Noise(dB)
BW=80kHz
G=+1
R =10k
LW
-80
-100
-140
-120
1
10
100
1000
1 10 100 1k 10k 100k 1M
Frequency (Hz)
Voltage Noise Density (nV/ Hz)
G014
1 V/divm
14
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
Figure 13. 0.1-Hz to 10-Hz Noise Figure 14. Input Voltage Noise Spectral Density vs
Frequency
Figure 15. THD+N Ratio vs Frequency Figure 16. THD+N vs Output Amplitude
Figure 17. Quiescent Current vs Temperature Figure 18. Quiescent Current vs Supply Voltage
l TEXAS INSTRUMENTS Ovevshom (m a 100 200 300 400 500 600 700 500 900 moo Canacmve Lnad 19F) Ovevshom (m - How : so 200 300 400 500 600 700 Capacmve Lnad (OF) 300 900 woo
W
W
W
W
+18V
-18V
ROUT
CL
OPA170
RL
G=+1
W
W
W
W
OPA170
R =
I10kW
ROUT
CL
RF=10kW
+18V
-18V
G= 1-
3
2.5
2
1.5
1
0.5
0
A ( V/V)m
OL
-75 -50 -25 0 25 150
Temperature( C)°
50 12510075
V =2.7V
S
V =4V
S
V =36V
S
10k
1k
100
10
1
1m
Z ( )W
O
1 10 100 1k 10k 10M
Frequency(Hz)
100k 1M
−20
−10
0
10
20
30
40
50
1k 10k 100k 1M 10M 100M
Frequency (Hz)
Gain (dB)
G = −1
G = 1
G = 100
G020
140
120
100
80
60
40
20
0
20
40
-
-
Gain(dB)
0.1 10 100 1k 10k 10M
Frequency(Hz)
1M100k
Phase
Gain
Phase( )°
1
135
90
45
0
45
90
135
180
225
270
-
-
-
-
-
-
15
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
Figure 19. Open-Loop Gain and Phase vs Frequency Figure 20. Closed-Loop Gain vs Frequency
Figure 21. Open-Loop Gain vs Temperature Figure 22. Open-Loop Output Impedance vs Frequency
100-mV output step
Figure 23. Small-Signal Overshoot vs Capacitive Load
100-mV output step
Figure 24. Small-Signal Overshoot vs Capacitive Load
l TEXAS INSTRUMENTS — VIN — Vow
20mV/div
Time(5 s/div)m
R =10k
C =10pF
W
L
L
+18V
-18V
RF=2kWRI=2kW
CL
OPA170
G= 1-
2V/div
Time(50 s/div)m
G=+1
R =10k
C =10pF
LW
L
5V/div
Time(10 s/div)m
2kW
20kW
VIN
VOUT
OPA170
G= 10-
+18V
-18V
20mV/div
Time(5 s/div)m
+18V
-18V CL
RL
OPA170
G=+1
R =10k
C =10pF
W
L
L
5V/div
Time(10 s/div)m
2kW
20kW
VIN
VOUT
OPA170
G= 10-
+18V
-18V
5V/div
Time(100 s/div)m
+18V
-18V
37VPP
SineWave
( 18.5V)±
OPA170
16
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
Figure 25. No Phase Reversal Figure 26. Positive Overload Recovery
Figure 27. Negative Overload Recovery Figure 28. Small-Signal Step Response (100 mV)
Figure 29. Small-Signal Step Response (100 mV) Figure 30. Large-Signal Step Response
l TEXAS INSTRUMENTS
0
2.5
5
7.5
10
12.5
15
1k 10k 100k 1M 10M
Frequency (Hz)
Output Voltage (VPP )
VS = ±5 V
VS = ±1.35 V
VS = ±15 V
Maximum output range without
slew−rate induced distortion
G035
140
120
100
80
60
40
20
0
EMIRRIN+(dB)
10M 10G
Frequency(Hz)
100M
P = 10dBm
V = 18V
V =0V
-
±
RP
S
CM
1G
−30
−25
−20
−15
−10
−5
0
5
10
15
20
25
30
−50 −25 0 25 50 75 100 125 150
Temperature (°C)
ISC (mA)
ISC, Source
ISC, Sink
G034
10
8
6
4
2
0
2
4
6
8
10
-
-
-
-
-
DFrom Final Value (mV)
060
Time ( s)m
5040302010
12-Bit Settling
( 1/2LSB = 0.012%)± ±
G = 1-
2V/div
Time(50 s/div)m
G= 1
R =10k
C =10pF
-
W
L
L
10
8
6
4
2
0
2
4
6
8
10
-
-
-
-
-
DFrom Final Value (mV)
0100
Time ( s)m
12-Bit Settling
( 1/2LSB = 0.012%)± ±
908070605040302010
17
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
Figure 31. Large-Signal Step Response
10-V positive step
Figure 32. Large-Signal Settling Time
10-V negative step
Figure 33. Large-Signal Settling Time Figure 34. Short-Circuit Current vs Temperature
Figure 35. Maximum Output Voltage vs Frequency Figure 36. EMIRR IN+ vs Frequency
l TEXAS INSTRUMENTS H
NCH
Input Stage
PCH
Input Stage 2nd Stage Output
Stage
+IN
-IN
Ca
Cb
PCH
FF Stage
OUT
18
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
8 Detailed Description
8.1 Overview
The OPAx170 family of operational amplifiers provides high overall performance, making them ideal for many
general-purpose applications. The excellent offset drift of only 2 μV/°C provides excellent stability over the entire
temperature range. In addition, the device offers very good overall performance with high CMRR, PSRR, and
AOL.
8.2 Functional Block Diagram
8.3 Feature Description
8.3.1 Operating Characteristics
The OPAx170 family of amplifiers is specified for operation from 2.7 V to 36 V (±1.35 V to ±18 V). Many of the
specifications apply from –40°C to +125°C. Parameters that can exhibit significant variance with regard to
operating voltage or temperature are presented in the Typical Characteristics.
l TEXAS INSTRUMENTS
5V/div
Time(100 s/div)m
+18V
-18V
37VPP
SineWave
( 18.5V)±
OPA170
19
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
Feature Description (continued)
8.3.2 Phase-Reversal Protection
The OPAx170 family has an internal phase-reversal protection. Many operational amplifiers exhibit a phase
reversal when the input is driven beyond its linear common-mode range. This condition is most often
encountered in noninverting circuits when the input is driven beyond the specified common-mode voltage range,
causing the output to reverse into the opposite rail. The input of the OPAx170 prevents phase reversal with
excessive common-mode voltage. Instead, the output limits into the appropriate rail. This performance is shown
in Figure 37.
Figure 37. No Phase Reversal
8.3.3 Electrical Overstress
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress.
These questions tend to focus on the device inputs, but can involve the supply voltage pins or even the output
pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from
accidental ESD events both before and during product assembly.
A good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is helpful.
Figure 38 illustrates the ESD circuits contained in the OPAx170 (indicated by the dashed line area). The ESD
protection circuitry involves several current-steering diodes connected from the input and output pins and routed
back to the internal power-supply lines, where the diodes meet at an absorption device internal to the operational
amplifier. This protection circuitry is intended to remain inactive during normal circuit operation.
IIIIIIIIIIIIIIII IIIIIIIIIIIIIIII
Power-Supply
ESD Cell
2.5 NŸ
2.5 NŸ
IN±
IN+
R1
RS
RF
TVS
RL
VIN
±VS
ID
+
±
TVS
+VS
+
±
+
+
±
20
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
Feature Description (continued)
Figure 38. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application
An ESD event produces a short-duration, high-voltage pulse that is transformed into a short-duration, high-
current pulse when discharging through a semiconductor device. The ESD protection circuits are designed to
provide a current path around the operational amplifier core to prevent damage. The energy absorbed by the
protection circuitry is then dissipated as heat.
When an ESD voltage develops across two or more amplifier device pins, current flows through one or more
steering diodes. Depending on the path that the current takes, the absorption device can activate. The absorption
device has a trigger, or threshold voltage, that is above the normal operating voltage of the OPAx170 but below
the device breakdown voltage level. When this threshold is exceeded, the absorption device quickly activates
and clamps the voltage across the supply rails to a safe level.
When the operational amplifier connects into a circuit (refer to Figure 38), the ESD protection components are
intended to remain inactive and do not become involved in the application circuit operation. However,
circumstances may arise where an applied voltage exceeds the operating voltage range of a given pin. If this
condition occurs, there is a risk that some internal ESD protection circuits can turn on and conduct current. Any
such current flow occurs through steering-diode paths and rarely involves the absorption device.
Figure 38 shows a specific example where the input voltage (VIN) exceeds the positive supply voltage (V+) by
500 mV or more. Much of what happens in the circuit depends on the supply characteristics. If V+ can sink the
current, one of the upper input steering diodes conducts and directs current to V+. Excessively high current
levels can flow with increasingly higher VIN. As a result, the data sheet specifications recommend that
applications limit the input current to 10 mA.
If the supply is not capable of sinking the current, VIN can begin sourcing current to the operational amplifier and
then take over as the source of positive supply voltage. The danger in this case is that the voltage can rise to
levels that exceed the operational amplifier absolute maximum ratings.
l TEXAS INSTRUMENTS g E g E' O O "M 5 § 3:; Ram:50 0 0 ‘00 200 300 400 500 500 700 500 90° WW 0 ‘00 200 300 A00 500 500 700 800 900 ‘000 Capacmve Load (PF) “m Capacmve Load (pF) W
W
W
W
W
OPA170
R =
I10kW
ROUT
CL
RF=10kW
+18V
-18V
G= 1-
W
W
W
W
+18V
-18V
ROUT
CL
OPA170
RL
G=+1
21
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
Feature Description (continued)
Another common question involves what happens to the amplifier if an input signal is applied to the input when
the power supplies (V+ or V–) are at 0 V. Again, this question depends on the supply characteristic when at 0 V,
or at a level below the input signal amplitude. If the supplies appear as high impedance, then the input source
supplies the operational amplifier current through the current-steering diodes. This state is not a normal bias
condition; most likely, the amplifier does not operate normally. If the supplies are low impedance, then the current
through the steering diodes can become quite high. The current level depends on the ability of the input source
to deliver current, and any resistance in the input path.
If there is any uncertainty about the ability of the supply to absorb this current, add external Zener diodes to the
supply pins; see Figure 38. Select the Zener voltage so that the diode does not turn on during normal operation.
However, the Zener voltage must be low enough so that the Zener diode conducts if the supply pin begins to rise
above the safe-operating, supply-voltage level.
The OPAx170 input pins are protected from excessive differential voltage with back-to-back diodes; see
Figure 38. In most circuit applications, the input protection circuitry has no effect. However, in low-gain or G = 1
circuits, fast-ramping input signals can forward-bias these diodes because the output of the amplifier cannot
respond rapidly enough to the input ramp. If the input signal is fast enough to create this forward-bias condition,
limit the input signal current to 10 mA or less. If the input signal current is not inherently limited, an input series
resistor can be used to limit the input signal current. This input series resistor degrades the low-noise
performance of the OPAx170. Figure 38 illustrates an example configuration that implements a current-limiting
feedback resistor.
8.3.4 Capacitive Load and Stability
The dynamic characteristics of the OPAx170 have been optimized for common operating conditions. The
combination of low closed-loop gain and high capacitive loads decreases the phase margin of the amplifier and
can lead to gain peaking or oscillations. As a result, heavier capacitive loads must be isolated from the output.
The simplest way to achieve this isolation is to add a small resistor (for example, ROUT equal to 50 Ω) in series
with the output. Refer to Figure 39 and Figure 40 illustrate graphs of small-signal overshoot versus capacitive
load for several values of ROUT. Also, refer to applications bulletin AB-028, Feedback Plots Define Op Amp AC
Performance, for details of analysis techniques and application circuits.
100-mV Output Step G = 1
Figure 39. Small-Signal Overshoot vs Capacitive Load
100-mV Output Step G = –1
Figure 40. Small-Signal Overshoot vs Capacitive Load
l TEXAS INSTRUMENTS
22
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
8.4 Device Functional Modes
8.4.1 Common-Mode Voltage Range
The input common-mode voltage range of the OPAx170 series extends 100 mV below the negative rail and
within 2 V of the top rail for normal operation.
This device can operate with full rail-to-rail input 100 mV beyond the top rail, but with reduced performance within
2 V of the top rail. The typical performance in this range is summarized in Table 2.
Table 2. Typical Performance for Common-Mode Voltages Within 2 V of the Positive Supply
PARAMETER MIN TYP MAX UNIT
Input common-mode voltage (V+) – 2 (V+) + 0.1 V
Offset voltage 7 mV
vs temperature 12 µV/°C
Common-mode rejection 65 dB
Open-loop gain 60 dB
Gain-bandwidth product 0.3 MHz
Slew rate 0.3 V/µs
8.4.2 Overload Recovery
Overload recovery is defined as the time required for the operational amplifier output to recover from the
saturated state to the linear state. The output devices of the operational amplifier enter the saturation region
when the output voltage exceeds the rated operating voltage, either resulting from the high input voltage or the
high gain. After the device enters the saturation region, the charge carriers in the output devices need time to
return back to the normal state. After the charge carriers return back to the equilibrium state, the device begins to
slew at the normal slew rate. Thus, the propagation delay in case of an overload condition is the sum of the
overload recovery time and the slew time. The overload recovery time for the OPAx170 is approximately 2 µs.
l TEXAS INSTRUMENTS
+
CLOAD
+
±
VIN
VOUT
+VS
RISO
-VS
23
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The OPAx170 family of operational amplifiers provides high overall performance in a large number of general-
purpose applications. As with all amplifiers, applications with noisy or high-impedance power supplies require
decoupling capacitors placed close to the device pins. In most cases, 0.1-µF capacitors are adequate. Follow the
additional recommendations in Layout Guidelines in order to achieve the maximum performance from this device.
Many applications may introduce capacitive loading to the output of the amplifier (potentially causing instability).
One method of stabilizing the amplifier in such applications is to add an isolation resistor between the amplifier
output and the capacitive load. The design process for selecting this resistor is given in Typical Application.
9.2 Typical Application
This circuit can be used to drive capacitive loads such as cable shields, reference buffers, MOSFET gates, and
diodes. The circuit uses an isolation resistor (Riso) to stabilize the output of an operational amplifier. Riso
modifies the open-loop gain of the system to ensure the circuit has sufficient phase margin.
Figure 41. Unity-Gain Buffer With RISO Stability Compensation
9.2.1 Design Requirements
The design requirements are:
Supply voltage: 30 V (±15 V)
Capacitive loads: 100 pF, 1000 pF, 0.01 µF, 0.1 µF, and 1 µF
Phase margin: 45° and 60°
9.2.2 Detailed Design Procedure
9.2.2.1 Custom Design With WEBENCH® Tools
Click here to create a custom design using the OPAx170 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
Run electrical simulations to see important waveforms and circuit performance
l TEXAS INSTRUMENTS \SO LOAD
Gain (dB)
0
AOL
1/
20
40
60
80
10 100 1k 10k 100k 1M
100
120
10M 100M
Frequency (Hz)
20 dB
ROC dec
40 dB
1 dec
z
ISO LOAD
1
f2 R CŒ
u u u
 
p
ISO o LOAD
1
f2 R R CŒ
u u u
 
LOAD ISO
o ISO LOAD
1 + C × R × s
T(s) = 1 + R + R × C × s
24
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
Typical Application (continued)
Run thermal simulations to understand board thermal performance
Export customized schematic and layout into popular CAD formats
Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
9.2.2.2 Unity-Gain Buffer
Figure 41 shows a unity-gain buffer driving a capacitive load. Equation 1 shows the transfer function for the
circuit in Figure 41. Not shown in Figure 41 is the open-loop output resistance of the operational amplifier, Ro.
(1)
The transfer function in Equation 1 has a pole and a zero. The frequency of the pole (fp) is determined by (Ro+
RISO) and CLOAD. Components RISO and CLOAD determine the frequency of the zero (fz). A stable system is
obtained by selecting RISO such that the rate of closure (ROC) between the open-loop gain (AOL) and 1/βis 20
dB/decade. Figure 42 depicts the concept. The 1/βcurve for a unity-gain buffer is 0 dB.
Figure 42. Unity-Gain Amplifier With RISO Compensation
ROC stability analysis is typically simulated. The validity of the analysis depends on multiple factors, especially
the accurate modeling of Ro. In addition to simulating the ROC, a robust stability analysis includes a
measurement of overshoot percentage and ac gain peaking of the circuit using a function generator,
oscilloscope, and gain and phase analyzer. Phase margin is then calculated from these measurements. Table 3
shows the overshoot percentage and ac gain peaking that correspond to phase margins of 45° and 60°. For
more details on this design and other alternative devices that can be used in place of the OPA170, see the
Precision Design, Capacitive Load Drive Solution Using an Isolation Resistor.
Table 3. Phase Margin versus Overshoot and AC Gain
Peaking
PHASE
MARGIN OVERSHOOT AC GAIN PEAKING
45° 23.3% 2.35 dB
60° 8.8% 0.28 dB
l TEXAS INSTRUMENTS //
10
100
1000
10000
0.1 1 10 100 1000
Isolation Resistor (RISO, )
Capacitive Load (nF)
45° Phase Margin
60° Phase Margin
C002
25
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
9.2.3 Application Curve
Using the described methodology, the values of RISO that yield phase margins of 45º and 60º for various
capacitive loads were determined. The results are shown in Figure 43.
Figure 43. Isolation Resistor Required for Various Capacitive Loads to Achieve a Target Phase Margin
l TEXAS INSTRUMENTS
+
VIN
VOUT
RG
RF
26
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
10 Power Supply Recommendations
The OPAx170 is specified for operation from 2.7 V to 36 V (±1.35 V to ±18 V); many specifications apply from
–40°C to 85°C. Parameters that can exhibit significant variance with regard to operating voltage or temperature
are presented in the Typical Characteristics.
CAUTION
Supply voltages larger than 40 V can permanently damage the device; see the
Absolute Maximum Ratings.
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or high-
impedance power supplies. For more detailed information on bypass capacitor placement, see the Layout
section.
11 Layout
11.1 Layout Guidelines
For best operational performance of the device, use good printed-circuit board (PCB) layout practices, including:
Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the
operational amplifier itself. Bypass capacitors are used to reduce the coupled noise by providing low-
impedance power sources local to the analog circuitry.
Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for single-
supply applications.
Separate grounding for analog and digital portions of circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground
planes. A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically
separate digital and analog grounds, paying attention to the flow of the ground current. For more detailed
information, see application report SLOA089,Circuit Board Layout Techniques.
In order to reduce parasitic coupling, run the input traces as far away from the supply or output traces as
possible. If these traces cannot be kept separate, crossing the sensitive trace perpendicularly is much
better than in parallel with the noisy trace.
Place the external components as close to the device as possible. As illustrated in Figure 45, keeping RF
and RGclose to the inverting input minimizes parasitic capacitance.
Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly
reduce leakage currents from nearby traces that are at different potentials.
11.2 Layout Example
Figure 44. Schematic Representation
l TEXAS INSTRUMENTS
NC
±IN
+IN
V±
V+
OUTPUT
NC
NC
VS+
VS±GND
Ground (GND) plane on another layer
VOUT
VIN
GND
Run the input traces
as far away from
the supply lines
as possible RF
RG
Place components close
to device and to each
other to reduce parasitic
errors
Use low-ESR,
ceramic bypass
capacitor
GND
Use a low-ESR,
ceramic bypass
capacitor
27
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
Layout Example (continued)
Figure 45. Operational Amplifier Board Layout for a Noninverting Configuration
l TEXAS INSTRUMENTS
28
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
12 Device and Documentation Support
12.1 Device Support
12.1.1 Third-Party Products Disclaimer
TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT
CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES
OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER
ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.
12.1.2 Development Support
12.1.2.1 TINA-TI™ (Free Software Download)
TINA™ is a simple, powerful, and easy-to-use circuit simulation program based on a SPICE engine. TINA-TI™ is
a free, fully-functional version of the TINA software, preloaded with a library of macro models in addition to a
range of both passive and active models. TINA-TI provides all the conventional dc, transient, and frequency
domain analysis of SPICE, as well as additional design capabilities.
Available as a free download from the Analog eLab Design Center, TINA-TI offers extensive post-processing
capability that allows users to format results in a variety of ways. Virtual instruments offer the ability to select
input waveforms and probe circuit nodes, voltages, and waveforms, creating a dynamic quick-start tool.
NOTE
These files require that either the TINA software (from DesignSoft™) or TINA-TI software
be installed. Download the free TINA-TI software from the TINA-TI folder.
12.1.2.2 DIP Adapter EVM
The DIP Adapter EVM tool provides an easy, low-cost way to prototype small surface mount ICs. The evaluation
tool these TI packages: D or U (SOIC-8), PW (TSSOP-8), DGK (MSOP-8), DBV (SOT23-6, SOT23-5 and
SOT23-3), DCK (SC70-6 and SC70-5), and DRL (SOT563-6). The DIP Adapter EVM may also be used with
terminal strips or may be wired directly to existing circuits.
12.1.2.3 Universal Operational Amplifier EVM
The Universal Op Amp EVM is a series of general-purpose, blank circuit boards that simplify prototyping circuits
for a variety of IC package types. The evaluation module board design allows many different circuits to be
constructed easily and quickly. Five models are offered, with each model intended for a specific package type.
PDIP, SOIC, MSOP, TSSOP and SOT23 packages are all supported.
NOTE
These boards are unpopulated, so users must provide their own ICs. TI recommends
requesting several op amp device samples when ordering the Universal Op Amp EVM.
12.1.2.4 TI Precision Designs
TI Precision Designs are analog solutions created by TI’s precision analog applications experts and offer the
theory of operation, component selection, simulation, complete PCB schematic and layout, bill of materials, and
measured performance of many useful circuits. TI Precision Designs are available online at
http://www.ti.com/ww/en/analog/precision-designs/.
l TEXAS INSTRUMENTS
29
OPA170
,
OPA2170
,
OPA4170
www.ti.com
SBOS557E –AUGUST 2011REVISED APRIL 2018
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation FeedbackCopyright © 2011–2018, Texas Instruments Incorporated
Device Support (continued)
12.1.2.5 WEBENCH®Filter Designer
WEBENCH® Filter Designer is a simple, powerful, and easy-to-use active filter design program. The WEBENCH
Filter Designer lets you create optimized filter designs using a selection of TI operational amplifiers and passive
components from TI's vendor partners.
Available as a web-based tool from the WEBENCH® Design Center, WEBENCH® Filter Designer allows you to
design, optimize, and simulate complete multistage active filter solutions within minutes.
12.1.2.6 Custom Design With WEBENCH® Tools
Click here to create a custom design using the OPAx170 device with the WEBENCH® Power Designer.
1. Start by entering the input voltage (VIN), output voltage (VOUT), and output current (IOUT) requirements.
2. Optimize the design for key parameters such as efficiency, footprint, and cost using the optimizer dial.
3. Compare the generated design with other possible solutions from Texas Instruments.
The WEBENCH Power Designer provides a customized schematic along with a list of materials with real-time
pricing and component availability.
In most cases, these actions are available:
Run electrical simulations to see important waveforms and circuit performance
Run thermal simulations to understand board thermal performance
Export customized schematic and layout into popular CAD formats
Print PDF reports for the design, and share the design with colleagues
Get more information about WEBENCH tools at www.ti.com/WEBENCH.
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation, see the following (available for download from www.ti.com):
Feedback Plots Define Op Amp AC Performance
Capacitive Load Drive Solution Using an Isolation Resistor
Circuit Board Layout Techniques
12.3 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to order now.
Table 4. Related Links
PARTS PRODUCT FOLDER ORDER NOW TECHNICAL
DOCUMENTS TOOLS &
SOFTWARE SUPPORT &
COMMUNITY
OPA170 Click here Click here Click here Click here Click here
OPA2170 Click here Click here Click here Click here Click here
OPA4170 Click here Click here Click here Click here Click here
12.4 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.5 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
l TEXAS INSTRUMENTS
30
OPA170
,
OPA2170
,
OPA4170
SBOS557E –AUGUST 2011REVISED APRIL 2018
www.ti.com
Product Folder Links: OPA170 OPA2170 OPA4170
Submit Documentation Feedback Copyright © 2011–2018, Texas Instruments Incorporated
Community Resources (continued)
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.6 Trademarks
TINA-TI, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
TINA, DesignSoft are trademarks of DesignSoft, Inc.
All other trademarks are the property of their respective owners.
12.7 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.8 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
I TEXAS INSTRUMENTS Samples Samples Samples Samples Samples Samples Samples Samples Sample: Sample: Samples Samples Samples Samples Samples Samples Samples Samples
PACKAGE OPTION ADDENDUM
www.ti.com 28-Sep-2021
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
OPA170AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 O170A
OPA170AIDBVR ACTIVE SOT-23 DBV 5 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OSVI
OPA170AIDBVT ACTIVE SOT-23 DBV 5 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OSVI
OPA170AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 O170A
OPA170AIDRLR ACTIVE SOT-5X3 DRL 5 4000 RoHS & Green NIPDAUAG Level-1-260C-UNLIM -40 to 125 DAQ
OPA170AIDRLT ACTIVE SOT-5X3 DRL 5 250 RoHS & Green NIPDAUAG Level-1-260C-UNLIM -40 to 125 DAQ
OPA2170AID ACTIVE SOIC D 8 75 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 2170A
OPA2170AIDCUR ACTIVE VSSOP DCU 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 OPQC
OPA2170AIDCUT ACTIVE VSSOP DCU 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 OPQC
OPA2170AIDGK ACTIVE VSSOP DGK 8 80 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 OPNI
OPA2170AIDGKR ACTIVE VSSOP DGK 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 125 OPNI
OPA2170AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 2170A
OPA2170AIDSGR ACTIVE WSON DSG 8 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1D4U
OPA2170AIDSGT ACTIVE WSON DSG 8 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 1D4U
OPA4170AID ACTIVE SOIC D 14 50 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 OPA4170
OPA4170AIDR ACTIVE SOIC D 14 2500 RoHS & Green NIPDAU Level-3-260C-168 HR -40 to 125 OPA4170
OPA4170AIPW ACTIVE TSSOP PW 14 90 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA4170
OPA4170AIPWR ACTIVE TSSOP PW 14 2000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 125 OPA4170
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 28-Sep-2021
Addendum-Page 2
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF OPA170, OPA2170, OPA4170 :
Automotive : OPA170-Q1, OPA2170-Q1, OPA4170-Q1
Enhanced Product : OPA170-EP
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
www.ti.com 28-Sep-2021
Addendum-Page 3
Enhanced Product - Supports Defense, Aerospace and Medical Applications
l TEXAS INSTRUMENTS REEL DIMENSIONS TAPE DIMENSIONS 7 “K0 '«Pt» Reel Dlameter AD Dimension designed to accommodate the component Width at) Dimension destgned to accommodate the component tengtn K0 Dimension destgned to accommodate the component thickness 7 w Oveiau Width onhe carrier tape i P1 Pitch between successive cavtty centers f T Reel Width (W1) QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE C) O O D C) O D O iSDrOcketHutes —> User Dtrecllnn 0' Feed \i/ Pockel Quadrams
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
OPA170AIDBVR SOT-23 DBV 5 3000 180.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
OPA170AIDBVR SOT-23 DBV 5 3000 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
OPA170AIDBVT SOT-23 DBV 5 250 180.0 8.4 3.23 3.17 1.37 4.0 8.0 Q3
OPA170AIDBVT SOT-23 DBV 5 250 179.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3
OPA170AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
OPA170AIDRLR SOT-5X3 DRL 5 4000 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
OPA170AIDRLT SOT-5X3 DRL 5 250 180.0 8.4 1.98 1.78 0.69 4.0 8.0 Q3
OPA2170AIDCUR VSSOP DCU 8 3000 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3
OPA2170AIDCUT VSSOP DCU 8 250 180.0 8.4 2.25 3.35 1.05 4.0 8.0 Q3
OPA2170AIDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
OPA2170AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
OPA2170AIDSGR WSON DSG 8 3000 180.0 8.4 2.3 2.3 1.15 4.0 8.0 Q2
OPA2170AIDSGT WSON DSG 8 250 180.0 8.4 2.3 2.3 1.15 4.0 8.0 Q2
OPA4170AIDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
OPA4170AIPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Mar-2022
Pack Materials-Page 1
l TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
OPA170AIDBVR SOT-23 DBV 5 3000 223.0 270.0 35.0
OPA170AIDBVR SOT-23 DBV 5 3000 213.0 191.0 35.0
OPA170AIDBVT SOT-23 DBV 5 250 202.0 201.0 28.0
OPA170AIDBVT SOT-23 DBV 5 250 213.0 191.0 35.0
OPA170AIDR SOIC D 8 2500 853.0 449.0 35.0
OPA170AIDRLR SOT-5X3 DRL 5 4000 202.0 201.0 28.0
OPA170AIDRLT SOT-5X3 DRL 5 250 202.0 201.0 28.0
OPA2170AIDCUR VSSOP DCU 8 3000 202.0 201.0 28.0
OPA2170AIDCUT VSSOP DCU 8 250 202.0 201.0 28.0
OPA2170AIDGKR VSSOP DGK 8 2500 366.0 364.0 50.0
OPA2170AIDR SOIC D 8 2500 853.0 449.0 35.0
OPA2170AIDSGR WSON DSG 8 3000 210.0 185.0 35.0
OPA2170AIDSGT WSON DSG 8 250 210.0 185.0 35.0
OPA4170AIDR SOIC D 14 2500 853.0 449.0 35.0
OPA4170AIPWR TSSOP PW 14 2000 853.0 449.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Mar-2022
Pack Materials-Page 2
l TEXAS INSTRUMENTS T - Tube height| L - Tube length l ,g + w-Tuhe _______________ _ ______________ width 47 — B - Alignment groove width
TUBE
*All dimensions are nominal
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
OPA170AID D SOIC 8 75 506.6 8 3940 4.32
OPA2170AID D SOIC 8 75 506.6 8 3940 4.32
OPA2170AIDGK DGK VSSOP 8 80 330 6.55 500 2.88
OPA4170AID D SOIC 14 50 506.6 8 3940 4.32
OPA4170AIPW PW TSSOP 14 90 530 10.2 3600 3.5
PACKAGE MATERIALS INFORMATION
www.ti.com 12-Mar-2022
Pack Materials-Page 3
www.ti.com
PACKAGE OUTLINE
C
0.22
0.08 TYP
0.25
3.0
2.6
2X 0.95
1.9
1.45
0.90
0.15
0.00 TYP
5X 0.5
0.3
0.6
0.3 TYP
8
0 TYP
1.9
A
3.05
2.75
B
1.75
1.45
(1.1)
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/F 06/2021
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Refernce JEDEC MO-178.
4. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.25 mm per side.
0.2 C A B
1
34
5
2
INDEX AREA
PIN 1
GAGE PLANE
SEATING PLANE
0.1 C
SCALE 4.000
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MAX
ARROUND 0.07 MIN
ARROUND
5X (1.1)
5X (0.6)
(2.6)
(1.9)
2X (0.95)
(R0.05) TYP
4214839/F 06/2021
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:15X
PKG
1
34
5
2
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED METAL
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
EXPOSED METAL
www.ti.com
EXAMPLE STENCIL DESIGN
(2.6)
(1.9)
2X(0.95)
5X (1.1)
5X (0.6)
(R0.05) TYP
SOT-23 - 1.45 mm max heightDBV0005A
SMALL OUTLINE TRANSISTOR
4214839/F 06/2021
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:15X
SYMM
PKG
1
34
5
2
www.ti.com
PACKAGE OUTLINE
C
1.7
1.5
2X 0.5
2X 1
5X 0.3
0.1
0.6 MAX
5X 0.18
0.08
5X 0.4
0.2
0.05
0.00 TYP
5X 0.27
0.15
B1.3
1.1
A
1.7
1.5
NOTE 3
SOT - 0.6 mm max heightDRL0005A
PLASTIC SMALL OUTLINE
4220753/B 12/2020
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. Reference JEDEC registration MO-293 Variation UAAD-1
15
PIN 1
ID AREA
34
SEATING PLANE
0.05 C
SCALE 8.000
0.1 C A B
0.05
SYMM
SYMM
www.ti.com
EXAMPLE BOARD LAYOUT
0.05 MAX
AROUND 0.05 MIN
AROUND
5X (0.67)
5X (0.3)
(1.48)
2X (0.5)
(R0.05) TYP
(1)
4220753/B 12/2020
SOT - 0.6 mm max heightDRL0005A
PLASTIC SMALL OUTLINE
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
SYMM
LAND PATTERN EXAMPLE
SCALE:30X
SYMM
1
34
5
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
METAL
SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDERMASK DETAILS
vi“‘+\‘\‘\
www.ti.com
EXAMPLE STENCIL DESIGN
(1.48)
2X (0.5)
5X (0.67)
5X (0.3)
(R0.05) TYP
(1)
SOT - 0.6 mm max heightDRL0005A
PLASTIC SMALL OUTLINE
4220753/B 12/2020
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:30X
SYMM
SYMM
1
34
5
MECHANICAL DATA D U1 4)} 0 (3'4) DLASHC SMALL 0U ¥N¥ 4040047 5/M 06/1‘ NO'ES, A AH Hnec' dimensmrs c'e m 'mc'ves ['nflhmeter5> B Th5 drawer ‘5 subje», ,0 change mm: Home, A Body \cngth docs rm mac mod Hoar, p'omswons, (xv gmc bms Mom mm warmers, or gm buns sha‘ nm exceed 3005 (015) eam swce @ Body mm does 101 meme 11mm fish. E Rdererce JEDEC MS 012 mam AB, nter‘ec: flash sfu‘ not exceed 0017 (043) each swde {If TEXAS INSTRUMENTS www.1i.com
LAND PATTERN DATA D (R7PDSOmGl4) PLASTlC SMALL OUTLINE Example Board Layout Sterlazlogpeulyngs (Mole c) —— <—14x0,55 -hhheb&&t="" tmedddifi§n%="" 5.40="" 5,40="" @eeeeeej="" rfihfl§eflhj="" —=""> ——l 2x1,27 Example Non Soldermask Delined Pad Example Pad Geometry (See Note c) F Example l / Solder Mask Opening 7 0 07 f (See Note E) All Armlnd ,/ tzllmss/E oa/lz NOTES: A. All linear dimensions are in millimeters. a, Tnis drawan is subject to cnonae wl'lhuul notice. c. Publlcutl’on chs7351 is recommended tor alternate desl’gns. D. Laser ctming apertures w‘lth trapezoidal walls and also roundlng comers wlll otter better paste release. Customers should contact their board assembly site for stencil design recommendations, Reter tc ch—7525 lor otner stencil recommendations. E. Customers snoola contact their ooard looricotion site lor solder musk tolerances between ond oroond signol oods. {I} Tums INSTRUMENTS www.li.com
MECHANICAL DATA "7’7 : 3‘ AST‘C SMAH CJ’ N7 HHHHHHH . . ‘7,4’ 44*, A f;—‘ NO'ES' A AH Hnec' dimensmrs c'e m m'\\me(ers Dwmens'amnq cnd tu‘erc'vcmg per ASME w 5M 1994, Tm drawer ‘5 subje», ,o "hangs wnrau: Home, Budy \evvgih ‘ues m W" Le mom Hush, pyuws‘m Ur guts Ms M exceed 0,15 each m & Rudy wde does NM Wands \Mer end flair \Mefiead 'Wclsh shaH um exceed 0‘75 each S‘de E Fa‘s WM" JEDEC M07153 MUM "\u>h, main: bus, 01 guie buns shuH {if TEXAS INSTRUMENTS www.ci.com
‘J
www.ti.com
PACKAGE OUTLINE
C
.228-.244 TYP
[5.80-6.19]
.069 MAX
[1.75]
6X .050
[1.27]
8X .012-.020
[0.31-0.51]
2X
.150
[3.81]
.005-.010 TYP
[0.13-0.25]
0 - 8 .004-.010
[0.11-0.25]
.010
[0.25]
.016-.050
[0.41-1.27]
4X (0 -15 )
A
.189-.197
[4.81-5.00]
NOTE 3
B .150-.157
[3.81-3.98]
NOTE 4
4X (0 -15 )
(.041)
[1.04]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
18
.010 [0.25] C A B
5
4
PIN 1 ID AREA
SEATING PLANE
.004 [0.1] C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.800
Yl“‘+
www.ti.com
EXAMPLE BOARD LAYOUT
.0028 MAX
[0.07]
ALL AROUND
.0028 MIN
[0.07]
ALL AROUND
(.213)
[5.4]
6X (.050 )
[1.27]
8X (.061 )
[1.55]
8X (.024)
[0.6]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
EXPOSED
METAL
OPENING
SOLDER MASK METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED
METAL
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SYMM
1
45
8
SEE
DETAILS
SYMM
www.ti.com
EXAMPLE STENCIL DESIGN
8X (.061 )
[1.55]
8X (.024)
[0.6]
6X (.050 )
[1.27] (.213)
[5.4]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
SYMM
SYMM
1
45
8
MECHANICAL DATA DGK (S—PDSO—GS) PLASTIC SMALL—OUTLINE PACKAGE m1 WW“: {[0 VAX % j 3,010 I 4073329/E 05/06 NO'ES' A AH imec' dimensmrs c'e m m'hmeiers 5 Th: drawing is enmec: :e change within: nciice. Body icnqth Coos mi mciucc maid Hash, protrusions or we tms Mom 'iush, aromons, ov qaw burrs shaH m exceed 015 per end b Budy mm does not wcude inierieud flasi‘ inieriead ‘iush s'mii 'mi exceed 050 pe' we : FuHs wiUHn JEDEC M0487 quulion AA, except 'vievieud ricer INSTRUMENTS w. (i. com
LAND PATTERN DATA DGK (37PD30708) PLASTIC SMALL OUTLINE PACKAGE Exampie Board Layout Exampie stencii Openings Based on a stencii thickness of .127mm L005inch), (See Nate 0) (,0 65) TYP ‘ Li 5 LLLLL L, pm ,,,,, PKG PKG "\ i i 4 — ----- i — ----- i D DU D i i ’ PKG PKG Q G . / Exampie , Non Soldermusk Defined Pad i , , —\ L A ~/ ‘\ Example \ Spider Musk Opening / +1 1‘(0,45) ‘ (See Note E) t 1 (1,45) < ‘="" \pud="" geometry="" ’="" (see="" note="" c)="" \="" +ii¢="" (0,05)="" \="" ah="" around="" «="" ,="" \="" e="" ’="" i="" ‘\-=""> muss/A 11/13 NOTES: A. Ali iinear dimensions are in miilimeters. a. This drawing is subject ta change without natiee, C, Publication |PCi7351 is recommended ior alternate designsu a. Laser cutting apertures with trapezoidui walls and aisa rounding corners w‘iH ofler eetter paste veiease. Customers snouid Contact their board ussembiy site for stencii design recommendations. Rater tn IFS—7525 for other slenci'i recummendutions. Customers should Contact their tmurd fabrication site for solder musk tolerances between and around signal pads. .r'I {I TEXAS INSTRUMENTS www.li.com
www.ti.com
GENERIC PACKAGE VIEW
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
WSON - 0.8 mm max heightDSG 8
PLASTIC SMALL OUTLINE - NO LEAD
2 x 2, 0.5 mm pitch
4224783/A
,Cl, LII, 7|:|
www.ti.com
PACKAGE OUTLINE
C
8X 0.32
0.18
1.6 0.1
2X
1.5
0.9 0.1
6X 0.5
8X 0.4
0.2
0.05
0.00
0.8 MAX
A2.1
1.9 B
2.1
1.9
0.32
0.18
0.4
0.2
(0.2) TYP
WSON - 0.8 mm max heightDSG0008A
PLASTIC SMALL OUTLINE - NO LEAD
4218900/D 04/2020
PIN 1 INDEX AREA
SEATING PLANE
0.08 C
1
45
8
PIN 1 ID 0.1 C A B
0.05 C
THERMAL PAD
EXPOSED
9
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
SCALE 5.500
ALTERNATIVE TERMINAL SHAPE
TYPICAL
www.ti.com
EXAMPLE BOARD LAYOUT
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
8X (0.25)
(1.6)
(1.9)
6X (0.5)
(0.9) ( 0.2) VIA
TYP
(0.55)
8X (0.5)
(R0.05) TYP
WSON - 0.8 mm max heightDSG0008A
PLASTIC SMALL OUTLINE - NO LEAD
4218900/D 04/2020
SYMM
1
45
8
LAND PATTERN EXAMPLE
SCALE:20X
SYMM 9
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
SOLDER MASK
OPENING
SOLDER MASK
METAL UNDER
SOLDER MASK
DEFINED
METAL
SOLDER MASK
OPENING
SOLDER MASK DETAILS
NON SOLDER MASK
DEFINED
(PREFERRED)
www.ti.com
EXAMPLE STENCIL DESIGN
(R0.05) TYP
8X (0.25)
8X (0.5)
(0.9)
(0.7)
(1.9)
(0.45)
6X (0.5)
WSON - 0.8 mm max heightDSG0008A
PLASTIC SMALL OUTLINE - NO LEAD
4218900/D 04/2020
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD 9:
87% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
SCALE:25X
SYMM
1
45
8
METAL
SYMM 9
MECHANICAL DATA DCU (R—PDSO—GB) PLASTIC SMALL—OUTLINE PACKAGE (DIE DOWN) F Wngiw 31117 0,15 \0M 7 7,40 310 2,20 3,00 i Gage Pm J i 3W1 / __'—_“ NDEX AREA 1 99 Do $1212]: : Q% J L W 4200503” z7/05 NOTES, A AH Hnec' dimensmrs in m'hmekers B Tris drawing is sum 0 Change mm: malice, 0 Body dimCHSiOnS do mi inciudc mom flash or oromsm Moid tics» and pvctrusmn srai not cxcccd o it) 30V m D FuHs wiwu JEDEC M0457 vuiiuliovi CA ‘4‘ TEXAS INSTRUMENTS www.(i. com
LAND PATTERN DATA DCU (S—PDSO—G8) PLASTIC SMALL OUTLINE PACKAGE (DH-Z DOWN) Example Board Layout (Nate 0,5) l ihi' 6x 0,5 I 3,1 ( 8% ‘\ / + 0,3 Exampie /Soider Mask Opening \ Pad Geometry Exampie Stencii Design (Nate D) 8x 0,25 —‘ |——‘ Er Eflfii- Bx 0,75 7 ‘|———'- 6x 0,5 HHH%- meow/c 04/12 NOTES: Au Pom .m Ali iinear dimensions are in miiiimeters‘ This drawing is subject to change without notice. Publication iPC—735I is recommended for aiternate designs. Laser cutting aperture5 with trupezoidai wails and also rounding corners wiil ciier better paste reiease. Customers should Contact their haard assembly site for stencii design recommendations. Refer to iFC—7525 for other slencii recommendations. Custamers shauid Contact their board fabrication site for saider mask toierances between and around signai pads. {I} Tums INSTRUMENTS www.li.com
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, regulatory or other requirements.
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an
application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license
is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you
will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these
resources.
TI’s products are provided subject to TI’s Terms of Sale or other applicable terms available either on ti.com or provided in conjunction with
such TI products. TI’s provision of these resources does not expand or otherwise alter TI’s applicable warranties or warranty disclaimers for
TI products.
TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2022, Texas Instruments Incorporated