EPC9091: 5A, 0 ~ 100V Half H-Bridge, eGaN

Summary

The EPC9091 development board is a 100 V maximum device voltage, 5 A output current, half bridge with onboard gate drives, featuring the EPC2051 enhancement mode (eGaN) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2051 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9091 development board is 2" x 2" and contains two EPC2051 eGaN FETs in a half bridge configuration using the uP1966A gate driver from uPI Semiconductor Corp. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A block diagram of the circuit is given below.

For more information on the EPC2051 please refer to the datasheet available which should be read in conjunction with this quick start guide. GaN

Specifications

Manufacturer	EPC
Category	Power Management
Sub-Category	Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number	917-1198-ND
Eval Board Supplier	EPC
Eval Board	Normally In Stock
Configuration	1 Half H-Bridge
Voltage Out Range	0 ~ 100 V
Current Out	5 A
Interface	Parallel Logic
Features	Shoot Through Protection
Switching Frequency (Max)	Not given
Component Count + Extras	26 + 16
Design Author	EPC
Main I.C. Base Part	EPC2051
Date Created By Author	2018-07
Date Added To Library	2018-09