The TW070J120B silicon carbide MOSFET, from Toshiba, is a power device featuring a low R-DS-On of 70 milliohms.

Discover Nexperia's latest e-mode GaN FET portfolio expansion designed to meet the growing demand for high-efficiency, compact power solutions.

Introduction to Omron's MOS FET Relays, the G3VM series, and a showcase of the comparisons between MOS FET relays and mechanical relays.

In this episode, you will learn how Omron’s MOS FET modules can be a best fit for your applications.

Omron’s G3VM-66M MOSFET relay modules are SPDT relays that reduce design time, shrink design footprint, and provide a long, maintenance free operating life.

G3VM-21MT is the first electronic component in the world*2 to adopt a "T-type circuit structure"*3. It allows high-precision measurement and improves productivity of electronic components.

This quality, reliability and lifetime testing presentation is part one of Transphorm's four part GaN FET video series

This video is the high level introduction comparison of Transphorm's GaN FET technology against current e-mode technology in the market.

In this webinar, we will talk about the various characteristics of MOSFETs and how the technology they are developed in plays a role in their suitability for different applications.

Texas Instruments' LMG1210 is a 200 V, half-bridge MOSFET and gallium nitride field-effect transistor driver designed for ultra-high frequency, high-efficiency applications.

In this quick learning session we review a typical Nexperia GaN FET datasheet, and explore the key values and tolerances for consideration.

Nexperia gives an overview into the differences between power GaN FET configurations, cascode and enhancement-mode (e-mode). Diving into the technical details such as the behaviors but also the electrical characteristics.

Discusses the differences between Transphorm's GaN FET and today's e mode technology

There is a myth that Transphorm's GaN FET is not slew-rate controllable. This presentation will cancel this myth.

The Texas Instruments MCF8316 A is a single-chip, code-free, sensorless, Field Oriented Control solution for customers driving speed-controlled 12 to 24 volt brushless DC motors or Permanent Magnet Synchronous motors with up to 8 amps peak current.

德州仪器公司为您提供LMG1210，这是一款200伏半桥金属氧化物半导体场效应晶体管和氮化镓场效应晶体管驱动器。它专为超高频、高效率应用而设计，具有可调死区能力、超小传播延迟和3.4纳秒的高端到低端匹配，以优化系统效率。

Transphorm's elimination of a Kelvin source connection for its GaN FETs

Nexperia applies almost two decades of copper-clip package expertise to high-voltage with the development of our surface-mount GaN package CCPAK.

介绍了一种巧妙的电路设计方法，解决在使用串联栅极电阻减慢FET导通的速度时，同时又不减慢断开的速度。

面对 GaN 驱动的技术挑战，ADI 推出了专为第三代半导体优化的解决方案 —— 超紧凑型氮化镓驱动器 LT8418。这款芯片延续了 ADI 一贯的高集成度设计理念，采用仅 1.67×1.67mm 的 WLCSP BGA 封装，通过极低的寄生电感设计，为高功率密度应用提供了理想的解决方案。