SiC FET | Datasheet Preview

The TW070J120B silicon carbide MOSFET, from Toshiba, is a power device featuring a low R-DS-On of 70 milliohms.

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SiC FET | Datasheet Preview

This N-Channel through-hole 3-pin silicon carbide power MOSFET features a large drain current of 36 amps, a high drain-to-source voltage up to 1200 volts, and a wide gate-to-source voltage rating from minus 10 volts to 25 volts. This highly-reliable 1.2 kilovolt class silicon carbide MOSFET is offered in a 15.5 by 20 by 4.5 millimeter package. Power devices are critical components for reducing power consumption in industrial electrical equipment. Silicon carbide is commonly anticipated as a next-generation material for power devices, as it allows for higher voltages and lower losses when compared to silicon. Ideal applications include power-dense applications, such as power management systems and photovoltaic power systems for industrial equipment.