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SiC FET | Datasheet Preview

This N-Channel through-hole 3-pin silicon carbide power MOSFET features a large drain current of 36 amps, a high drain-to-source voltage up to 1200 volts, and a wide gate-to-source voltage rating from minus 10 volts to 25 volts. This highly-reliable 1.2 kilovolt class silicon carbide MOSFET is offered in a 15.5 by 20 by 4.5 millimeter package. Power devices are critical components for reducing power consumption in industrial electrical equipment. Silicon carbide is commonly anticipated as a next-generation material for power devices, as it allows for higher voltages and lower losses when compared to silicon. Ideal applications include power-dense applications, such as power management systems and photovoltaic power systems for industrial equipment.

1/5/2021 10:28:45 PM

Part List

图片制造商零件编号描述可供货数量价格查看详情
SICFET N-CH 1200V 36A TO3PTW070J120B,S1QSICFET N-CH 1200V 36A TO3P53 - 立即发货$253.57查看详情

Related Product Highlight

TW070J120B SiC MOSFET Toshiba 的 TW070J120B 碳化硅 (SiC) MOSFET 采用 TO-3P (N) 封装，具有低 RDS(ON) (70 mΩ) 的特性。

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