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The Hall Effect element is a 4 terminal semiconductor device typically fabricated from InAs material, which is selected for the material’s sensitivity to a magnetic field. The Control Current (IC) biases the Hall Effect element in a quiescent state. The incident magnetic flux creates a charge separation resulting in a potential difference represented by the Hall Voltage, VH. The VH is further signal conditioned and used to control the secondary current. The secondary current is driven through the secondary winding to generate the counter-flux needed to cancel the flux generated by the primary current.
PTM Published on: 2011-11-03
