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SiC Trench MOSFETs Slide 4

Shown here are the graphs for the switching characteristics of ROHM’s 2nd and 3rd generation SiC MOSFETs. The trench MOS structure used in the 3rd generation MOSFETs reduces turn on loss (Eon) by half compared with 2nd generation products.

PTM Published on: 2019-09-27