Detailed description of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the important switch characteristics, application examples, test data, and other application hints.

Though not as well known as the bipolar transistor or op amp, this long-established transistor excels where optimized circuit behavior is needed such as ultra-low noise.

In sensor signal conditioning circuit designs, the design engineer must protect the input section from overcurrent and overvoltage conditions.

Linear Integrated Systems' LSK389 dual monolithic JFET for ultra-low noise.

Linear Integrated Systems' LS844 N-channel dual JFETs make high-performance complementary input stages possible.

ROHM's application note illustrates the use of various capacitors for output smoothing with simulation results of the output voltage ripple.

ROHM PCB layout design for switching power supply IC is as important as the circuit design to avoid various problems caused by power supply circuit.

This application note explains the speed control algorithm in the sensorless vector control software for PMSM using Renesas’ microcontroller.

The avalanche ruggedness performance of Nexperia's power MOSFET is measured as a single-shot unclamped inductive switching (UIS) avalanche energy.

Nexperia's solenoid drivers are used in many automotive applications, from starting the engine to shifting the transmission.

An explanation of specific product and application aspects of Nexperia's resistor-equipped transistors (RETs).

Nexperia's half-bridge MOSFETs can improve switching behavior and efficiency to meet EMC requirements and reliability goals.

Nexperia's thermal design guide assists design engineers in understanding the power dissipation limits of LFPAK MOSFETs.

Allegro's racing to meet the challenges of electrification application note.

Eaton Power Modules (EPM) are non-isolated DC/DC converters available in two families; EPM78Vx and EPM12V1/ EPM12V2.

Advantages of Infineon's high-voltage gate driver ICs (HVICs) based on its silicon-on-insulator (SOI) technology.

Infineon's TRENCHSTOP™ IGBT7 is based on micro-pattern trench technology and offers significantly reduced on-state loss compared to IGBT4.

ON Semiconductors application note regarding enabling pin operation and functions of eFuses.

ON Semiconductors application note regarding eFuse Load Current Measurements.

ON Semiconductors application note regarding paralleling eFuses.