EPC9006C: 7A, 0 ~ 100V, Half Bridge

Summary

The EPC9006C development board is a 100V maximum device voltage, 7A maximum output current, half bridge with onboard gate drives, featuring the EPC2007C* enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2007C* eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9006C development board is 2” x 1.5” and contains two EPC2007C* eGaN FETs in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.

For more information on the EPC2007C* eGaN FET please refer to the datasheet. The datasheet should be read in conjunction with this quick start guide.

* Status: New Device Offered (NDO)

The GaN Experts recommend EPC2051 for new designs

NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.

Specifications

Manufacturer	EPC
Category	Power Management
Sub-Category	Power Output Stages (H-Bridge, Half Bridge)
Eval Board Part Number	917-1128-ND
Eval Board Supplier	EPC
Eval Board	Normally In Stock
Configuration	1 Half H-Bridge
Voltage Out Range	0 ~ 100 V
Current Out	7 A
Interface	PWM, Dual
Features	Internal Bootstrap Circuit Shoot Through Protection Under Voltage Protection (UVP)
Switching Frequency (Max)	Not given
Component Count + Extras	29 + 7
Design Author	EPC
Main I.C. Base Part	EPC2007C
Date Created By Author	2016-01
Date Added To Library	2017-08