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Smartphone screens, batteries and increased 5G features with intensified data processing and transmission rates and volumes have put a spotlight on charging speeds and the size, weight and cost of leading-edge travel adapters.
Gallium Nitride (GaN) and Silicon Carbide (SiC) are ‘wide-bandgap’ (WBG) devices.
Gallium NItride (GaN) must operate safely and efficiently in a high-frequency ecosystem to fulfil the promise of a WBG material, and higher-level device integration is a critical enabler.
As internet protocol (IP) traffic continues to rise, economies of scale mean that data centers are consolidating into ‘hyperscale’ operations.
Gallium nitride (GaN) iii is a ‘wide band-gap’ material because it offers an electron band-gap that is 3x larger than silicon, which means GaN can handle 10x stronger electric fields and deliver high power with dramatically smaller chips
OEMs are looking for ways to reduce their carbon footprint by reducing materials and energy use related to their products.
High-speed – or rather – high-frequency power topologies mean smaller and smaller passive components, to the extreme case that in a 40MHz phi-2 converter at Stanford Universityii, the ferrite material completely disappears in an ‘air-core’ inductor.
International Women in Engineering Day was initiated by the United Kingdom’s Women's Engineering Society (WES) on June 23, 2014.
Delivering GaN Quality and Reliability at Scale Across a Growing Range of Powers and Applications
To achieve lifetimes over 20 years, Navitas focuses on design, testing, and reliability validation of its device and partners with customers to ensure robust system level validation.
Comparison of life cycle impacts for consumer charging using GaN technology in place of Si chargers.
Navitas’ GaNFast™ power ICs with GaNSense™ technology enable ‘detect and protect’ in 30 ns.
