设计资源

Transphorm 凭借其适用于高压功率转换应用的最高性能、最高可靠性的 GaN 器件，引领着 GaN 行业革命。该公司提供一系列工具和资源，可协助进行 GaN 应用设计。

评估套件

零件编号	描述	查看详情
TDTTP2500P100-KIT-ND	2.5KW TOTEM-POLE PFC EVAL KIT	查看详情
TDTTP4000W066B-KIT-ND	4KW TOTEM-POLE PFC EVAL KIT	查看详情
TDINV1000P100-KIT-ND	1KW INVERTER EVALUATION KIT	查看详情
TDINV3000W050-KIT	3.0KW INVERTER EVAL KIT	查看详情
TDINV3500P100-KIT-ND	3.5KW INVERTER EVAL KIT	查看详情
TDHBG2500P100-KIT-ND	2.5KW HB, BUCK OR BOOST EVAL KIT	查看详情

应用说明

AN0002：Transphorm GaN 功率 FET 的特征

AN0003：GaN FET 的印刷电路板布局及探测

AN0004：采用 GaN 设计硬开关桥

AN0006：Transphorm GaN FET 的 VGS 瞬态容差

AN0007：有关气相回流的 PQFN88 无铅二级焊接建议

AN0008：GaN FET 漏极电压及雪崩额定值

AN0009：Transphorm GaN FET 的推荐外部电路

AN0010：在高功率应用中使用漏极铁氧体磁珠及 RC 吸收器将 GaN FET 并联

AN0011：PQFN GaN FET 并联 PCB 应用说明

设计指南

DG004 DSP 代码

DG005：用于原型设计的超快过流断路器电路

DG005 设计文件

DG006：使用 GaN FET 的 600 W DC 至 DC LLC 设计

DG006 设计文件

Spice 模型（按零件编号列出）

查看详细介绍与 GaN 设计有关的各种主题的技术论文

Barr, R., Haller, J., Shono, K., Georgieva, E., McKay, J., Smith, P., Smith, K., Rakesh, L., Yifeng, Y., High Voltage GaN Switch Reliability, Nov 2018

Parikh, Primit; Smith, Kurt; Barr, Ronald; et al., 650 Volt GaN Commercialization Reaches Automotive Standards, ECS Transactions, September 2017

Parikh, Primit, Driving the Adoption of High Voltage Gallium Nitride Field-Effect Transistors [Expert View], IEEE Power Electronics Magazine, September, 2017

Huang, Zan; Cuadra, Jason, Preventing GaN Device VHF Oscillation, APEC 2017 Industry Session, March, 2017

Zuk, Philip; Campeau, Gaetan, How to Design with GaN in Under an Hour, APEC 2017 Exhibitor Session, March 2017

Smith, Kurt; Barr, Ronald, Reliability Lifecycle of GaN Power Devices, white paper, March 2017

Wang, Zhan; Wu, Yifeng, 99% Efficiency True-Bridgeless Totem-Pole PFC Based on GaN HEMTs

Wang, Zhan; Honea, Jim; Wu, Yifeng, Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs, May 2015 (requires IEEE access)

Zhou, Liang; Wu, Yifeng; Honea, Jim; Wang, Zhan, High-efficiency True Bridgeless Totem Pole PFC based on GaN HEMT: Design Challenges and Cost-effective Solutions, May 2015 (requires IEEE access)

Wang, Zhan; Wu, Yifeng; Honea, Jim; Zhou, Liang, Paralleling GaN HEMTs for diode-free bridge power converters, Mar 2015

Kikkawa, T., et al, 600V JEDEC-qualified Highly-reliable GaN HEMTs on Si Substrates, Dec 2014 (requires IEEE access)

Wu, Yifeng; Guerrero, Jose; McKay, Jim; Smith, Kurt, Advances in reliability and operation space of high-voltage GaN power devices on Si substrates, Oct 2014 (requires IEEE access)

Wang, Zhan; Honea, Jim; Yuxiang Shi; Hui Li, Investigation of driver circuits for GaN HEMTs in leaded packages, Oct 2014

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, B., kV-class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800V and 100kHz, June 2014 (requires IEEE access)

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; McKay, J.; Barr, R.; Birkhahn, R., Performance and Robustness of First Generation 600V GaN-on-Si Power Transistors, Oct 2013 (requires IEEE access)

Parikh, Primit; Wu, Yifeng; Shen, Likun, Commercialization of High 600V GaN-on-Silicon Power Devices, May 2013 (requires IEEE access)

Wu, Yifeng, GaN Offers Advantages to Future HEV, March 2013

Wu, Y.; Kebort, D.; Guerrero, J.; Yea, S.; Honea, J.; Shirabe, K.; Kang, J., High-Frequency, GaN Diode-Free Motor Drive Inverter with Pure Sine Wave Output, Oct 2012

Shirabe, Kohei; Swamy, Mahesh; Kang, Jun-Koo; Hisatsune, Masaki; Wu, Yifeng; Kebort, Don; Honea, Jim, Advantages of High-frequency PWM in AC Motor Drive Applications, Sept 2012 (requires IEEE access)

Wu, Y.; Coffie, R.; Fichtenbaum, N.; Dora, Y.; Suh, C.S.; Shen, L.; Parikh, P.; Mishra, U.K., Total GaN solution to electrical power conversion, Jun 2011 (requires IEEE access)