NXP RF Circuit Collection

AFIC901N

The AFIC901N is a 2-stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre-driver and driver in a wide range of industrial, medical and communications applications.

Features

• Characterized for operation from 1.8 to 1000 MHz
• Unmatched input, interstage and output allowing wide frequency range utilization
• Integrated ESD protection
• Same PCB layout can be used for 136-174 MHz, 350-520 MHz and 760-870 MHz designs.
• 24-pin, 4 mm QFN plastic package
• RoHS Compliant
• This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.

Typical Applications

• Driver for mobile radio power amplifiers
• Output stage for low power handheld radios
• Driver for communications and industrial systems

AFSC5G23D37

The AFSC5G23D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.

Features

• Frequency: 2300-2400 MHz
• Advanced high performance in-package Doherty
• Fully matched (50 ohm input/output, DC blocked)
• Designed for low complexity analog or digital linearization systems
• RoHS compliant

AFSC5G26D37

The AFSC5G26D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.

Features

• Frequency: Designed for 2545-2655 MHz. Operates across 2496-2690 MHz.
• Advanced high performance in-package Doherty
• Fully matched (50 ohm input/output, DC blocked)
• Designed for low complexity analog or digital linearization systems
• RoHS compliant

AFSC5G35D35

The AFSC5G35D35 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.

Features

• 3400-3600 MHz
• Advanced high performance in-package Doherty
• Fully matched (50 ohm input/output, DC blocked)
• Designed for low complexity analog or digital linearization systems
• RoHS compliant

AFSC5G35D37

The AFSC5G35D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.

Features

• 3400-3600 MHz
• Advanced high performance in-package Doherty
• Fully matched (50 ohm input/output, DC blocked)
• Designed for low complexity analog or digital linearization systems
• RoHS compliant

AFSC5G37D37

The AFSC5G37D37 is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications that demand high performance in the smallest footprint. Ideal for applications in massive MIMO systems, outdoor small cells, and low power remote radio heads. The field-proven LDMOS power amplifiers are designed for TDD and FDD LTE systems.

Features

• 3600–3800 MHz
• Advanced high performance in--package Doherty
• Fully matched (50 Ohm input/output, DC blocked)
• Designed for low complexity analog or digital linearization systems
• RoHS compliant

AFV10700H

These RF power transistors, AFV10700H, AFV10700HS and AFV10700GS, are designed for pulse applications operating at 960 to 1215 MHz. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains.

Features

• Internally input and output matched for broadband operation and ease of use
• The device can be used single-ended, push-pull, or quadrature configuration
• Qualified up to a maximum of 55 VDD operation
• High ruggedness, handles > 20:1 VSWR
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation and gate voltage pulsing
• Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
• RoHS Compliant
• Included in our product longevity program with assured supply for a minimum of 15 years after launch.

AFV121KH

These RF power transistors, AFV121KH, AFV121KHS and AFV121KGS, are designed for pulse applications operating at frequencies from 960 to 1215 MHz, such as distance measuring equipment (DME), secondary radars and high power transponders for air traffic control. These devices are suitable for use in pulse applications with large duty cycles and long pulses, including Mode S ELM.

Features

• Internally input and output matched for broadband operation and ease of use
• Device can be used single-ended, push-pull, or in a quadrature configuration
• Qualified up to a maximum of 50 VDD operation
• High ruggedness, handles > 20:1 VSWR
• Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
• Characterized with series equivalent large-signal impedance parameters
• RoHS Compliant
• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch.

Typical Applications

• Air Traffic Control Systems (ATC), including ground-based secondary radars such as Mode S ELM interrogators
• Distance Measuring Equipment (DME)
• Mode S transponders, including:
  • Traffic Alert and Collision Avoidance Systems (TCAS)
  • Automatic Dependent Surveillance-Broadcast in and out (ADS-B) using, e.g., 1090 extended squitter or Universal Access Transponder (UAT)

MHT2012N

The MHT2012N 12.5 W CW RF power integrated circuit is designed for RF energy applications operating in the 2450 MHz ISM band.

Features

• High gain simplifies layout and reduced PCB area compared to a discrete design
• Qualified up to a maximum of 32 VDD operation
• On-chip input and interstage matching (50 ohm input)
• Integrated quiescent current temperature compensation with enable/disable function
• Integrated ESD protection
• 150°C case and junction temperature ratings
• Ideal as a driver for high power RF energy applications
• RoHS compliant

Typical Applications

• Driver for consumer and commercial cooking applications
• Driver for industrial heating applications, such as sterilization, pasteurization, drying, moisture-leveling process, curing and welding
• Driver for medical applications, such as microwave ablation, renal denervation and diathermy
• Final stage for portable heating devices and portable medical systems

MMRF5014H

The MMRF5014H 125 W CW RF power transistor is optimized for wideband operation up to 2700 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.

Features

• Decade bandwidth performance
• Low thermal resistance
• Advanced GaN on SiC, offering high power density
• Input matched for extended wideband performance
• High ruggedness: > 20:1 VSWR
• RoHS compliant
• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch
• Applications
• Ideal for military end-use applications, including the following:
• Narrowband and multi-octave wideband amplifiers
• Radar
• Jammers
• EMC testing
• Also suitable for commercial applications, including the following:
• Public mobile radios, including emergency service radios
• Industrial, scientific and medical
• Wideband laboratory amplifiers
• Wireless cellular infrastructure

MRF101AN & MRF101AN/BN

These devices, MRF101AN and MRF101BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.

Features

• Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
• Characterized from 30 to 50 V
• Suitable for linear application
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Included in our product longevity program with assured supply for a minimum of 15 years after launch
• RoHS compliant

Typical applications

• Industrial, scientific, medical (ISM)
• Laser generation
• Plasma etching
• Particle accelerators
• MRI and other medical applications
• Industrial heating, welding and drying systems
• Radio and VHF TV broadcast
• HF and VHF communications
• Switch mode power supplies

MRF13750H

These 750 W CW transistors, MRF13750H and MRF13750HS, are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of CW or pulse power in narrowband operation.

Features

• Internally input pre-matched for ease of use
• Device can be used single-ended or in a push-pull configuration
• Characterized for 30 to 50 V
• Suitable for linear applications with appropriate biasing
• Integrated ESD protection
• Recommended driver: MRFE6VS25GN (25 W)
• Included in our product longevity program with assured supply for a minimum of 15 years after launch.
• RoHS compliant

Typical Applications

• 915 MHz industrial heating/welding systems
• 1300 MHz particle accelerators

MRF1K50H & MRF1K50N

This high ruggedness device, MRF1K50H & MRF1K50N, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

Features

• High drain-source avalanche energy absorption capability
• Unmatched input and output
• Device can be used single-ended or in a push-pull configuration
• Characterized from 30 to 50 V
• High rugggedness. Handles 65:1 VSWR
• This product is included in our product longevity program with assured supply for a minimum of 15 years after launch
• RoHS compliant
• Recommended driver: MRFE6VS25N (25 W)
• Lower thermal resistance part available: MRF1K50N
• Popular applications
• Industrial, scientific, medical (ISM)
• Laser generation
• Plasma etching
• Particle accelerators
• MRI, diathermy, skin laser and ablation
• Industrial heating, welding and drying systems
• Broadcast
• Radio broadcast
• VHF TV broadcast
• Aerospace
• VHF omnidirectional range (VOR)
• HF and VHF communications
• Weather radar
• Mobile radio
• VHF and UHF base stations

MRF24G300HS

These 300 W CW GaN transistors, MRF24G300HS and MRF24G300H, are designed for industrial, scientific and medical (ISM) applications at 2450 MHz. These devices are suitable for use in CW, pulse, cycling and linear applications. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments.

These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. There is no guarantee of performance when these parts are used in applications designed outside of these frequencies.

Features

• Advanced GaN on SiC, for optimal thermal performance
• Characterized for CW, long pulse (up to several seconds) and short pulse operations
• Device can be used in a single-ended or push-pull configuration
• Input matched for simplified input circuitry
• Qualified up to 55 V
• Suitable for linear application
• RoHS Compliant
• Target Applications
• Industrial heating
• Welding and heat sealing
• Plasma generation
• Lighting
• Scientific instrumentation
• Medical
• Microwave ablation
• Diathermy

MRF300AN

These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz.

Features

• Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
• Characterized from 30 to 50 V
• Suitable for linear application
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
• RoHS compliant

Typical Applications

• Industrial, scientific, medical (ISM)
• Laser generation
• Plasma etching
• Particle accelerators
• MRI and other medical applications
• Industrial heating, welding and drying systems
• Radio and VHF TV broadcast
• HF and VHF communications
• Switch mode power supplies

MRFE6VP5600H

These high ruggedness devices, MRFE6VP5600HR6 and MRFE6VP5600HSR6, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Features

• Unmatched input and output allowing wide frequency range utilization
• Device can be used single-ended or in a push-pull configuration
• Qualified up to a maximum of 50 VDD operation
• Characterized from 30 V to 50 V for extended power range
• Suitable for linear application with appropriate biasing
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Characterized with series equivalent large-signal impedance parameters
• RoHS compliant
• In tape and reel. R6 suffix = 150 units, 56 mm tape width, 13 inch reel
• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch

MRFE6VP61K25H

These high ruggedness devices, MRFE6VP61K25H, MRFE6VP61K25HS and MRFE6VP61K25GS, are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Features

• Unmatched input and output allowing wide frequency range utilization
• Device can be used single-ended or in a push-pull configuration
• Qualified Up to a maximum of 50 VDD operation
• Characterized from 30 V to 50 V for extended power range
• Suitable for linear application with appropriate biasing
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Characterized with series equivalent large-signal impedance parameters
• RoHS compliant
• In tape and reel. R6 suffix = 150 Units, 56 mm tape width, 13-inch reel
• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch

MRFE6VP6300H

The MRFE6VP6300HR3 and MRFE6VP6300HSR3 are high ruggedness devices, designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

Features

• Unmatched input and output allowing wide frequency range utilization
• Device can be used single-ended or in a push-pull configuration
• Qualified Up to a maximum of 50 VDD operation
• Characterized from 30 V to 50 V for extended power range
• Suitable for linear application with appropriate biasing
• Integrated ESD protection
• Greater negative gate-source voltage range for improved Class C operation
• Characterized with series equivalent large-signal impedance parameters
• RoHS Compliant
• NI-780-4 in tape and reel. R3 suffix = 250 Units, 56 mm tape width, 13 inch reel
• NI-780S-4 in tape and reel. R3 suffix = 250 Units, 32 mm tape width, 13 inch reel
• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch

MRFE6VS25N

MRFE6VS25NR1 and MRFE6VS25GNR1 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.

Features

• Wide operating frequency range
• Extreme ruggedness
• Unmatched, capable of very broadband operation
• Integrated stability enhancements
• Low thermal resistance
• Extended ESD protection circuit
• RoHS compliant
• In tape and reel. R1 suffix = 500 units, 24 mm tape width, 13-inch Reel
• These products are included in our product longevity program with assured supply for a minimum of 15 years after launch

MRFX035H

The MRFX035H high ruggedness device is designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 512 MHz.

Features

• Unmatched input and output allowing wide frequency range utilization
• 50 ohm native output impedance
• Qualified up to a maximum of 65 VDD operation
• Characterized from 30 to 65 V for extended power range
• High breakdown voltage for enhanced reliability
• Suitable for linear application with appropriate biasing
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Included in our product longevity program with assured supply for a minimum of 15 years after launch
• RoHS compliant

Typical Applications

• Industrial, scientific, medical (ISM)
• Laser generation
• Plasma generation
• Particle accelerators
• MRI, RF ablation and skin treatment
• Industrial heating, welding and drying systems
• Radio and VHF TV broadcast
• Aerospace
• HF communications
• Radar
• Mobile radio
• HF and VHF communications
• PMR base stations

MRFX1K80H & MRFX1K80N

The MRFX1K80H is the first device based on NXP's new 65 V LDMOS technology that focuses on ease of use. The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.

Features

• Based on new 65 V LDMOS technology, designed for ease of use
• Characterized from 30 to 65 V for extended power range
• Unmatched input and output
• High breakdown voltage for enhanced reliability and higher efficiency architectures
• High drain-source avalanche energy absorption capability
• High ruggedness. Handles 65:1 VSWR
• RoHS compliant
• Lower thermal resistance option in over-molded plastic package: MRFX1K80N
• Included in our product longevity program with assured supply for a minimum of 15 years after launch

Typical Applications

• Industrial, scientific, medical (ISM)
• Laser generation
• Plasma generation
• Particle accelerators
• MRI, RF ablation and skin treatment
• Industrial heating, welding and drying systems
• Radio and VHF TV broadcast
• Aerospace
• HF communications
• Radar
• Mobile Radio
• HF and VHF communications
• PMR base stations

MRFX600H

The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.

Features

• Unmatched input and output allowing wide frequency range utilization
• Output impedance fits a 4:1 transformer
• Device can be used single-ended or in a push-pull configuration
• Qualified up to a maximum of 65 VDD operation
• Characterized from 30 to 65 V for extended power range
• High breakdown voltage for enhanced reliability
• Suitable for linear application with appropriate biasing
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Included in our product longevity program with assured supply for a minimum of 15 years after launch
• RoHS compliant

Typical Applications

• Industrial, scientific, medical (ISM)
• Laser generation
• Plasma generation
• Particle accelerators
• MRI, RF ablation and skin treatment
• Industrial heating, welding and drying systems
• Radio and VHF TV broadcast
• Aerospace
• HF communications
• Radar
• Mobile Radio
• HF and VHF communications
• PMR base stations