The EPC9001 development board is a 40 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2015* enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2015* eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.
The EPC9001 development board is 2" x 1.5" and contains not only two EPC2015* eGaN FET in a half bridge configuration using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A complete block diagram of the circuit is given in Figure 1.
* Status: New Device Offered (NDO)
The GaN Experts recommend EPC2055 for new designs
NDO Note: This is an earlier generation device, and although it is fully supported, the recommended device will provide better price and performance in most applications.
| Manufacturer | EPC |
|---|---|
| Category | Power Management |
| Sub-Category | Power Output Stages (H-Bridge, Half Bridge) |
| Eval Board Part Number | 917-1010-ND |
| Eval Board Supplier | EPC |
| Eval Board |
Board not Stocked
|
| Configuration |
1 Half H-Bridge
|
| Voltage Out Range |
0 ~ 40 V
|
| Current Out |
15 A
|
| Interface |
PWM, Dual
|
| Features |
Internal Bootstrap Circuit
Shoot Through Protection Under Voltage Protection (UVP) |
| Switching Frequency (Max) |
Not given
|
| Component Count + Extras |
27 + 7
|
| Design Author |
EPC
|
| Main I.C. Base Part |
EPC2015
|
| Date Created By Author | 2014-02 |
| Date Added To Library | 2023-11 |
设置
快速交货
免运费
国际贸易术语
支付类型
市场产品
