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Another type of high-speed IGBTs is the RGWxxTS65C series that integrates a silicon carbide Schottky barrier diode (SBD). This makes it possible to achieve much faster reverse recovery time compared to conventional IGBTs with a built-in FRD diode. An example is the RGW0TSC65CHR that supports up to 96 A with reverse recovery time of only 33 ns. This translates to even lower switching losses over standard FRD-equipped IGBTs.
PTM Published on: 2023-07-06
