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The main difference between silicon and silicon carbide devices is that silicon carbide has a higher dielectric breakdown electric field at 2.8 MV/cm compared to only 0.3 MV/cm of regular silicon. Because of this, power devices built with silicon carbide can be made shorter to just 1/10th the length, which then further reduces ON-resistance and ultimately conduction loss. In addition, silicon carbide devices have much lower reverse recovery charge, resulting in lower switching losses. In fact, up to 74% lower switching losses can be seen with SiC FETs compared to IGBT + FRD solutions. Silicon carbide devices provide high-voltage switching voltage conversion with lower losses versus their silicon counterparts.
PTM Published on: 2023-07-06
